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Space qualified GAN Components for Next generation systems

Project description

Wide-bandgap semiconductors beyond silicon for satellite application

Gallium nitride (GaN) and silicon carbide (SiC) are wide-bandgap semiconductors characterised by high dielectric breakdown field strength. Hybrid GaN-on-SiC material has several key characteristics that make it a natural fit for power electronics. FFor example, it has a much higher thermal conductivity than GaN on Si power devices, allowing them to run at much higher voltages and higher power densities. The EU-funded SGAN-Next project aims to secure a GaN-on-SiC foundry process in Europe. As a proof of concept, researchers will develop robust solid-state power amplifiers, low-noise amplifiers and switch devices for use in satellites flying in low Earth orbit and geostationary Earth orbit. Their operation frequencies will exceed the Q band (ranging between 33 GHz and 50 GHz).

Objective

The main objective of SGAN-Next is to develop a fully European GaN on SiC foundry process and demonstrate outstanding performance at high frequency beyond Q-band, through the design of efficient and robust SSPA, LNA and switch devices for flexible LEO/GEO payloads. For this purpose, the project led by SENER as satellite equipment manufacturer, includes an epitaxy manufacturer (SweGaN), an industrial foundry (UMS), a research foundry (FBH) and two Universities (UNIBO and UAB). Moreover, the consortium count on the two main European satellite prime contractors (ADS and TAS) for the conceptual definition of services and the required system to answer market demand.
SGaN-Next aims to secure a European supply chain with GaN epitaxial wafers provided by SweGaN. For this new process, Q/V band power cells will be designed making use of novel processing modules and epitaxial concepts which reduce parasitic losses and increase thermal drain to heat sink. In parallel, UMS provides access to its 0.1-µm GaN technology (GH10-10), which will be optimized and submitted to a space qualification assessment through two runs available for MMICs design and validation. Microwave characterisation of GaN technology performance by model refinement and device characterisation will be addressed to improve MMIC design process along the project.
As highly efficient PAs are essential for Telecom active antennas with high number of active units, at least three PAs design concepts are proposed to answer the needs identified at equipment level. The efficiency has a critical impact on the extra power demanded to the system and the increased complexity to dissipate. On the reception side, a design of a LNA as well as a switch for robust RF front-end will be addressed. Last, but not least, packaging techniques will be evaluated for space use and finally, a demonstrator of an SSPA for actual antenna systems based on the designed MMIC’s will be developed and tested under space environmental conditions.

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Keywords

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Programme(s)

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Topic(s)

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Funding Scheme

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HORIZON-RIA - HORIZON Research and Innovation Actions

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Call for proposal

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(opens in new window) HORIZON-CL4-2022-SPACE-01

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Coordinator

SENER TAFS SA
Net EU contribution

Net EU financial contribution. The sum of money that the participant receives, deducted by the EU contribution to its linked third party. It considers the distribution of the EU financial contribution between direct beneficiaries of the project and other types of participants, like third-party participants.

€ 582 450,00
Address
CARRETERA DE CAMPO REAL KM 2, 100
28500 Arganda del Rey
Spain

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Region
Comunidad de Madrid Comunidad de Madrid Madrid
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
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Total cost

The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.

€ 582 450,00

Participants (8)

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