Descripción del proyecto
Semiconductores de amplia banda prohibida más allá del silicio para aplicaciones satelitales
El nitruro de galio (GaN) y el carburo de silicio (SiC) son semiconductores de amplia banda prohibida que se caracterizan por una elevada intensidad del campo de ruptura dieléctrica. El material híbrido de GaN sobre SiC tiene varias características fundamentales que lo hacen idóneo para la electrónica de potencia. Por ejemplo, presenta una conductividad térmica mucho mayor, lo que permite que los dispositivos funcionen con tensiones y densidades de potencia mucho más elevadas. En el proyecto SGAN-Next, financiado con fondos europeos, pretenden garantizar un proceso de fundición de GaN sobre SiC en Europa. Como prueba de concepto, los investigadores desarrollarán unos robustos amplificadores de potencia de estado sólido, amplificadores de bajo ruido y dispositivos de conmutación para su uso en satélites que vuelen en órbita terrestre baja y órbita terrestre geoestacionaria. Sus frecuencias de funcionamiento superarán la banda Q (comprendida entre 33 y 50 GHz).
Objetivo
The main objective of SGAN-Next is to develop a fully European GaN on SiC foundry process and demonstrate outstanding performance at high frequency beyond Q-band, through the design of efficient and robust SSPA, LNA and switch devices for flexible LEO/GEO payloads. For this purpose, the project led by SENER as satellite equipment manufacturer, includes an epitaxy manufacturer (SweGaN), an industrial foundry (UMS), a research foundry (FBH) and two Universities (UNIBO and UAB). Moreover, the consortium count on the two main European satellite prime contractors (ADS and TAS) for the conceptual definition of services and the required system to answer market demand.
SGaN-Next aims to secure a European supply chain with GaN epitaxial wafers provided by SweGaN. For this new process, Q/V band power cells will be designed making use of novel processing modules and epitaxial concepts which reduce parasitic losses and increase thermal drain to heat sink. In parallel, UMS provides access to its 0.1-µm GaN technology (GH10-10), which will be optimized and submitted to a space qualification assessment through two runs available for MMICs design and validation. Microwave characterisation of GaN technology performance by model refinement and device characterisation will be addressed to improve MMIC design process along the project.
As highly efficient PAs are essential for Telecom active antennas with high number of active units, at least three PAs design concepts are proposed to answer the needs identified at equipment level. The efficiency has a critical impact on the extra power demanded to the system and the increased complexity to dissipate. On the reception side, a design of a LNA as well as a switch for robust RF front-end will be addressed. Last, but not least, packaging techniques will be evaluated for space use and finally, a demonstrator of an SSPA for actual antenna systems based on the designed MMIC’s will be developed and tested under space environmental conditions.
Ámbito científico
Programa(s)
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Régimen de financiación
HORIZON-RIA - HORIZON Research and Innovation ActionsCoordinador
28500 ARGANDA DEY REY
España