Description du projet
Semi-conducteurs à large bande interdite au-delà du silicium pour les applications satellitaires
Le nitrure de gallium (GaN) et le carbure de silicium (SiC) sont des semi-conducteurs à large bande interdite caractérisés par un champ de rupture diélectrique élevé. Le matériau hybride GaN sur SiC présente plusieurs caractéristiques clés qui en font un choix évident pour l’électronique de puissance. Il affiche par exemple une conductivité thermique bien plus importante que les dispositifs de puissance en GaN sur Si, ce qui lui permet de fonctionner à des tensions et à des densités de puissance bien plus élevées. Le projet SGAN-Next financé par l’UE a pour ambition de mettre en place un processus de fonderie de GaN sur SiC en Europe. Comme preuve de concept, les chercheurs développeront des amplificateurs de puissance à l’état solide robustes, des amplificateurs faible bruit et des dispositifs de commutation destinés aux satellites évoluant en orbite terrestre basse et géostationnaire. Leurs fréquences de fonctionnement dépasseront la bande Q (comprise entre 33 GHz et 50 GHz).
Objectif
The main objective of SGAN-Next is to develop a fully European GaN on SiC foundry process and demonstrate outstanding performance at high frequency beyond Q-band, through the design of efficient and robust SSPA, LNA and switch devices for flexible LEO/GEO payloads. For this purpose, the project led by SENER as satellite equipment manufacturer, includes an epitaxy manufacturer (SweGaN), an industrial foundry (UMS), a research foundry (FBH) and two Universities (UNIBO and UAB). Moreover, the consortium count on the two main European satellite prime contractors (ADS and TAS) for the conceptual definition of services and the required system to answer market demand.
SGaN-Next aims to secure a European supply chain with GaN epitaxial wafers provided by SweGaN. For this new process, Q/V band power cells will be designed making use of novel processing modules and epitaxial concepts which reduce parasitic losses and increase thermal drain to heat sink. In parallel, UMS provides access to its 0.1-µm GaN technology (GH10-10), which will be optimized and submitted to a space qualification assessment through two runs available for MMICs design and validation. Microwave characterisation of GaN technology performance by model refinement and device characterisation will be addressed to improve MMIC design process along the project.
As highly efficient PAs are essential for Telecom active antennas with high number of active units, at least three PAs design concepts are proposed to answer the needs identified at equipment level. The efficiency has a critical impact on the extra power demanded to the system and the increased complexity to dissipate. On the reception side, a design of a LNA as well as a switch for robust RF front-end will be addressed. Last, but not least, packaging techniques will be evaluated for space use and finally, a demonstrator of an SSPA for actual antenna systems based on the designed MMIC’s will be developed and tested under space environmental conditions.
Champ scientifique
Programme(s)
Thème(s)
Régime de financement
HORIZON-RIA - HORIZON Research and Innovation ActionsCoordinateur
28500 ARGANDA DEY REY
Espagne