HETEROGENEOUS MATERIAL AND TECHNOLOGICAL PLATFORM FOR A NEW DOMAIN OF POWER NANOELECTRONICS

Información del proyecto

NANOMAT

Identificador del acuerdo de subvención: 101091433

DOI

10.3030/101091433

Fecha de la firma de la CE 14 Noviembre 2022

Fecha de inicio 1 Diciembre 2022

Fecha de finalización 30 Junio 2026

Financiado con arreglo a

• Digital, Industry and Space

Coste total

€ 4 125 051,25

Aportación de la UE

€ 4 125 051,00

Coordinado por

THALES SA
France

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Documents, reports (6)

Progress Management Reports Y1
Risk management (6 months update)
Dissemination and Communication report Y1
Progress Activity Report Y1
Yearly report on benchmarking Y1
NANOMAT PDE

Other (2)

Device use case trained models for machine learning
Device use case trained models for machine learning-2

Device use case trained models for machine learning

Data Management Plan (1)

NANOMAT DMP

Websites, patent fillings, videos etc. (1)

NANOMAT website

Publicaciones

Conference proceedings (16)

Determination of III-Nitride compound semiconductors polarity by SPM methods

Autores: K. Tsagaraki, A. Adikimenakis, A. Kostopoulos and A. Georgakilas
Publicado en: Micor Nano 2024, 2024
Editor: None

A study of Nanocrystalline Diamond electrical properties for RF-MEMS capacitive switches application

Autores: I.Kochylas, J. Theocharis, G.Papaioannou, Z.Afshin
Publicado en: 2024
Editor: None

An experimental study of power related reliability in RF MEMS capacitive switches

Autores: L. Michalas, A. Ngabonziza, G. Stavrinidis, P. Martins, M. le Baillif, A. Ziaei and G. Konstantinidis
Publicado en: Micro Nano 2024, 2024
Editor: None

On the electrical properties of ALD HfO2 dielectric films for MEMS capacitive switches

Autores: J. Theocharis, J. P. Martins, A. Mahjoub, E. Eustache, A. Ziaei, G. Papaioannou
Publicado en: 2024
Editor: sciencedirect

Electrical Characterization of HfO2 Dielectric Films Deposited by ALD for RF-MEMS Capacitive Switches

Autores: J. Theocharis, J. P. Martins,A. Mahjoub,E. Eustache, A. Ziaei and G. Papaioannou
Publicado en: 2024
Editor: None

Aging Investigations under Mechanical Stress on special Thermal Interface Materials

Autores: Antonio Harder, Santiago Campos-Boettges and Mohamad Abo Ras
Publicado en: SEMI-THERM Conference 2023, 2023
Editor: IEEE

Electrical Properties of Y2O3 for MEMS Applications

Autores: I. Kochilas, J. P. Martins, J. Theocharis, A. Mahjoub, E. Eustache, A. Ziaei, G. Papaioannou
Publicado en: EuroSimE 2025, 2025
Editor: None

Growth and performance of n++GaN/InAlN/AlN/GaN heterostructures for E/D-mode HEMTs applications

Autores: M. Blaho, D. Gregušová, O. Pohorelec, S. Hasenöhrl, P. Eliáš, F. Gucmann, E. Dobročka, Z. Zápražný, Š. Haščík, M. Kayambaki, M. Androulidaki, G. Konstantinidis, and J. Kuzmík
Publicado en: 12th International Workshop on Nitride Semiconductors (IWN 2024), 2024
Editor: None

Finite Element Simulation of Accelerated Stress Testing and Damage Detection for Micro and Nano Structures Using Surface Acoustic Waves (SAWs)

Autores: Arash Mohammadi, George Boldeiu, Dan Vasilache, Afshin Ziaei, Bernhard Wunderle
Publicado en: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2024
Editor: IEEE
DOI: 10.1109/EuroSimE60745.2024.10491501

Advanced Threshold voltage extraction methodologies for GaN High Electron Mobility Transistors

Autores: L. Chevas, N. Makris, M. Kayambaki, A. Kostopoulos, A. Stavrinidis, E. Lourandakis, G. Konstantinidis and M. Bucher
Publicado en: 2023
Editor: Micro Nano 2023

Thermal Effects in Surface Acoustic Wave Devices Induced by Damping

Autores: George Boldeiu, Alexandra Nicoloiu, Arash Mohammadi, Claudia Nastase, Monica Nedelcu, Ioana Zdru, Dan Vasilache, Adrian Dinescu, Bernhard Wunderle, Alexandru Muller
Publicado en: EuroSimE2025, 2025
Editor: None

Exploring Relaxation and Recovery Effects in Thermal Interface Materials

Autores: Santiago Campos-Boettges, Antonio Harder and Mohamad Abo Ras
Publicado en: 17th Advanced Technology Workshop on Micropackaging and Thermal Management, 2024
Editor: None

Considering Sustainability in Nanofabrication Cleanrooms: Initial Thoughts to Accelerate the Concept

Autores: V. Kontomitrou, S. Lymperapoulou, G. Stavrinidis, A. Stavrinidis, A. Kostopoulos, G. Konstantinidis and L. Michalas
Publicado en: 2024
Editor: None

High-power RF MEMS capacitive switches: Considering the self-actuation effect

Autores: L. Michalas, G. Stavrinidis, A. Stavrinidis, K. Tsagaraki and G. Konstantinidis
Publicado en: 2023
Editor: Mico Nano 2024

Study of the optical properties and stoichiometry of Silicon Nitride thin films grown on different substrates

Autores: M. Androulidaki, A. Stavrinidis, C.C. Katsidis, L. Michalas, K. Tsagaraki and G. Konstantinidi
Publicado en: 2023
Editor: Micro Nano 2023

Development of Hall Measurements in Nanomaterials

Autores: E. Koutantou, G. Veisakis, G. Makris, D. Kosmidis and G. Deligeorgis
Publicado en: 2024
Editor: None

Peer reviewed articles (3)

Growth and performance of n++ GaN cap layer for HEMTs applications

Autores: J. Kuzmík, M. Blaho, D. Gregušová, P. Eliáš, O. Pohorelec, S. Hasenöhrl, Š. Haščík, F. Gucmann, Z. Zápražný, E. Dobročka, M. Kyambaki, G. Konstantinidis
Publicado en: Materials Science in Semiconductor Processing, Edición 185, 2024, ISSN 1369-8001
Editor: Elsevier BV
DOI: 10.1016/J.MSSP.2024.108959

A study of field emission current in MEMS capacitors with bottom electrode covered by dielectric film

Autores: J. Theocharis, D. Birmpiliotis, S. Gardelis, G. Papaioannou
Publicado en: Microelectronics Reliability, Edición 150, 2023, ISSN 0026-2714
Editor: Elsevier BV
DOI: 10.1016/j.microrel.2023.115192

Enhanced 2DEG confinement in GaN-based HEMTs: Exploring the role of AlGaN back barriers through Schrödinger - Poisson simulations and experimental validation

Autores: Athanasios Kostopoulos, Adam Adikimenakis, Katerina Tsagaraki, Maria Kayambaki, Nikolaos Kornilios, George Konstantinidis, Alexandros Georgakilas
Publicado en: Materials Science in Semiconductor Processing, Edición 188, 2025, ISSN 1369-8001
Editor: Elsevier BV
DOI: 10.1016/J.MSSP.2024.109213

Other (1)

On the electrical properties of ALD HfO2 dielectric films for MEMS capacitive switches

Autores: J. Theocharis, J. P. Martins, A. Mahjoub, E. Eustache, A. Ziaei, G. Papaioannou
Publicado en: Microelectronics Reliability, 2025
Editor: ScienceDirect