HETEROGENEOUS MATERIAL AND TECHNOLOGICAL PLATFORM FOR A NEW DOMAIN OF POWER NANOELECTRONICS

Informazioni relative al progetto

NANOMAT

ID dell’accordo di sovvenzione: 101091433

DOI

10.3030/101091433

Data della firma CE 14 Novembre 2022

Data di avvio 1 Dicembre 2022

Data di completamento 30 Giugno 2026

Finanziato da

• Digital, Industry and Space

Costo totale

€ 4 125 051,25

Contributo UE

€ 4 125 051,00

Coordinato da

THALES SA
France

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Documents, reports (6)

Progress Management Reports Y1
Risk management (6 months update)
Dissemination and Communication report Y1
Progress Activity Report Y1
Yearly report on benchmarking Y1
NANOMAT PDE

Other (2)

Device use case trained models for machine learning
Device use case trained models for machine learning-2

Device use case trained models for machine learning

Data Management Plan (1)

NANOMAT DMP

Websites, patent fillings, videos etc. (1)

NANOMAT website

Pubblicazioni

Conference proceedings (16)

Determination of III-Nitride compound semiconductors polarity by SPM methods

Autori: K. Tsagaraki, A. Adikimenakis, A. Kostopoulos and A. Georgakilas
Pubblicato in: Micor Nano 2024, 2024
Editore: None

A study of Nanocrystalline Diamond electrical properties for RF-MEMS capacitive switches application

Autori: I.Kochylas, J. Theocharis, G.Papaioannou, Z.Afshin
Pubblicato in: 2024
Editore: None

An experimental study of power related reliability in RF MEMS capacitive switches

Autori: L. Michalas, A. Ngabonziza, G. Stavrinidis, P. Martins, M. le Baillif, A. Ziaei and G. Konstantinidis
Pubblicato in: Micro Nano 2024, 2024
Editore: None

On the electrical properties of ALD HfO2 dielectric films for MEMS capacitive switches

Autori: J. Theocharis, J. P. Martins, A. Mahjoub, E. Eustache, A. Ziaei, G. Papaioannou
Pubblicato in: 2024
Editore: sciencedirect

Electrical Characterization of HfO2 Dielectric Films Deposited by ALD for RF-MEMS Capacitive Switches

Autori: J. Theocharis, J. P. Martins,A. Mahjoub,E. Eustache, A. Ziaei and G. Papaioannou
Pubblicato in: 2024
Editore: None

Aging Investigations under Mechanical Stress on special Thermal Interface Materials

Autori: Antonio Harder, Santiago Campos-Boettges and Mohamad Abo Ras
Pubblicato in: SEMI-THERM Conference 2023, 2023
Editore: IEEE

Electrical Properties of Y2O3 for MEMS Applications

Autori: I. Kochilas, J. P. Martins, J. Theocharis, A. Mahjoub, E. Eustache, A. Ziaei, G. Papaioannou
Pubblicato in: EuroSimE 2025, 2025
Editore: None

Growth and performance of n++GaN/InAlN/AlN/GaN heterostructures for E/D-mode HEMTs applications

Autori: M. Blaho, D. Gregušová, O. Pohorelec, S. Hasenöhrl, P. Eliáš, F. Gucmann, E. Dobročka, Z. Zápražný, Š. Haščík, M. Kayambaki, M. Androulidaki, G. Konstantinidis, and J. Kuzmík
Pubblicato in: 12th International Workshop on Nitride Semiconductors (IWN 2024), 2024
Editore: None

Finite Element Simulation of Accelerated Stress Testing and Damage Detection for Micro and Nano Structures Using Surface Acoustic Waves (SAWs)

Autori: Arash Mohammadi, George Boldeiu, Dan Vasilache, Afshin Ziaei, Bernhard Wunderle
Pubblicato in: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2024
Editore: IEEE
DOI: 10.1109/EuroSimE60745.2024.10491501

Advanced Threshold voltage extraction methodologies for GaN High Electron Mobility Transistors

Autori: L. Chevas, N. Makris, M. Kayambaki, A. Kostopoulos, A. Stavrinidis, E. Lourandakis, G. Konstantinidis and M. Bucher
Pubblicato in: 2023
Editore: Micro Nano 2023

Thermal Effects in Surface Acoustic Wave Devices Induced by Damping

Autori: George Boldeiu, Alexandra Nicoloiu, Arash Mohammadi, Claudia Nastase, Monica Nedelcu, Ioana Zdru, Dan Vasilache, Adrian Dinescu, Bernhard Wunderle, Alexandru Muller
Pubblicato in: EuroSimE2025, 2025
Editore: None

Exploring Relaxation and Recovery Effects in Thermal Interface Materials

Autori: Santiago Campos-Boettges, Antonio Harder and Mohamad Abo Ras
Pubblicato in: 17th Advanced Technology Workshop on Micropackaging and Thermal Management, 2024
Editore: None

Considering Sustainability in Nanofabrication Cleanrooms: Initial Thoughts to Accelerate the Concept

Autori: V. Kontomitrou, S. Lymperapoulou, G. Stavrinidis, A. Stavrinidis, A. Kostopoulos, G. Konstantinidis and L. Michalas
Pubblicato in: 2024
Editore: None

High-power RF MEMS capacitive switches: Considering the self-actuation effect

Autori: L. Michalas, G. Stavrinidis, A. Stavrinidis, K. Tsagaraki and G. Konstantinidis
Pubblicato in: 2023
Editore: Mico Nano 2024

Study of the optical properties and stoichiometry of Silicon Nitride thin films grown on different substrates

Autori: M. Androulidaki, A. Stavrinidis, C.C. Katsidis, L. Michalas, K. Tsagaraki and G. Konstantinidi
Pubblicato in: 2023
Editore: Micro Nano 2023

Development of Hall Measurements in Nanomaterials

Autori: E. Koutantou, G. Veisakis, G. Makris, D. Kosmidis and G. Deligeorgis
Pubblicato in: 2024
Editore: None

Peer reviewed articles (3)

Growth and performance of n++ GaN cap layer for HEMTs applications

Autori: J. Kuzmík, M. Blaho, D. Gregušová, P. Eliáš, O. Pohorelec, S. Hasenöhrl, Š. Haščík, F. Gucmann, Z. Zápražný, E. Dobročka, M. Kyambaki, G. Konstantinidis
Pubblicato in: Materials Science in Semiconductor Processing, Numero 185, 2024, ISSN 1369-8001
Editore: Elsevier BV
DOI: 10.1016/J.MSSP.2024.108959

A study of field emission current in MEMS capacitors with bottom electrode covered by dielectric film

Autori: J. Theocharis, D. Birmpiliotis, S. Gardelis, G. Papaioannou
Pubblicato in: Microelectronics Reliability, Numero 150, 2023, ISSN 0026-2714
Editore: Elsevier BV
DOI: 10.1016/j.microrel.2023.115192

Enhanced 2DEG confinement in GaN-based HEMTs: Exploring the role of AlGaN back barriers through Schrödinger - Poisson simulations and experimental validation

Autori: Athanasios Kostopoulos, Adam Adikimenakis, Katerina Tsagaraki, Maria Kayambaki, Nikolaos Kornilios, George Konstantinidis, Alexandros Georgakilas
Pubblicato in: Materials Science in Semiconductor Processing, Numero 188, 2025, ISSN 1369-8001
Editore: Elsevier BV
DOI: 10.1016/J.MSSP.2024.109213

Other (1)

On the electrical properties of ALD HfO2 dielectric films for MEMS capacitive switches

Autori: J. Theocharis, J. P. Martins, A. Mahjoub, E. Eustache, A. Ziaei, G. Papaioannou
Pubblicato in: Microelectronics Reliability, 2025
Editore: ScienceDirect