FD-SOI Pilot Line for Applications with embedded non-volatile Memories, RF, 3D integration and PMIC, to ensure European Sovereignty

Project Information

FAMES

Grant agreement ID: 101182279

DOI

10.3030/101182279

EC signature date 3 December 2024

Start date 1 December 2023

End date 31 December 2028

Funded under

• Digital, Industry and Space

Total cost

€ 433 622 083,00

EU contribution

€ 216 811 041,50

Coordinated by

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Documents, reports (3)

D1.4.3: Non-volatile memory and 3D integration Process Design-Kit add-on for MAD305 MPW test vehicle

Delivery of the Process Design-Kit add-on to set-up the MAD305 maskset

D11.1.1: LCA methods

Definition of the relevant LCA methodology

D13.2: Initial Dissemination and Communication Plan

The Communication and Dissemination plan will include dissemination goals, information to be disseminated, targeted stakeholders, timelines and KPIs.

Publications

Peer reviewed articles (16)

Ising-inspired invertible adders using coupled phase-locked CMOS ring oscillators

Author(s): Ali Bazzi, Hugo Levices, Philippe Talatchian, Franck Badets, Louis Hutin
Published in: Physical Review Applied, Issue 24, 2025, ISSN 2331-7019
Publisher: American Physical Society (APS)
DOI: 10.1103/8XC2-VKK3

300 Mm sSOI engineering with ultra thin buried oxide

Author(s): D. Barge; M. Gallard; J.-M. Hartmann; F. Fournel; V. Loup; F. Mazen; E. Nolot; P. Hauchecorne; J. Sturm; V.H. Le; I. Huyet; D. Delprat; F. Boedt; F. Servant
Published in: Solid-State Electronics, 2026, ISSN 0000-0000
Publisher: EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109307

Toward full relaxation of sSOI substrates for PFET device fabrication

Author(s): N-P. Tran; F. Milesi; V-H. Le; L-D. Mohgouk Zouknak; P. Dezest; Ph. Rodriguez; L. Brunet; B. Duriez; M-C. Cyrille; C. Fenouillet-Beranger
Published in: Solid-State Electronics, Issue Volume 229, November 2025, 109196, 2025, ISSN 0000-0000
Publisher: 2025 Elsevier Ltd for EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109196

Bayesian continual learning and forgetting in neural networks

Author(s): Djohan Bonnet, Kellian Cottart, Tifenn Hirtzlin, Tarcisius Januel, Thomas Dalgaty, Elisa Vianello, Damien Querlioz
Published in: Nature Communications, Issue 16, 2025, ISSN 2041-1723
Publisher: Springer Science and Business Media LLC
DOI: 10.1038/S41467-025-64601-W

Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI

Author(s): Justine Lespiaux, Joël Kanyandekwe, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Alan Thouvard, Tim Biet
Published in: ECS Transactions, Issue Volume 114, Number 2, 2024, ISSN 1938-5862
Publisher: IOP Publishing
DOI: 10.1149/11402.0271ECST

Modeling of RRAM based PUF: a case study

Author(s): Kamil Ber, Piotr Wiśniewski
Published in: Solid-State Electronics, Issue 231, 2026, ISSN 0038-1101
Publisher: Elsevier BV
DOI: 10.1016/J.SSE.2025.109267

Influence of Dopant and Si:B Cap on Ni(Pt)-Based Silicidation of SiGe:B for Next Generation PMOS FDSOI Devices

Author(s): Helen Grampeix; Théo Cabaret; Justine Lespiaux; Patrice Gergaud; Nicolas Gauthier; Philippe Rodriguez
Published in: 2025 22nd International Workshop on Junction Technology (IWJT), 2025, ISSN 0000-0000
Publisher: IEEE
DOI: 10.23919/IWJT66253.2025.11072894

On the Enhanced p‐Type Performance of Back‐Gated WS₂ Devices

Author(s): Carlos Marquez, Farzan Gity, Jose C. Galdon, Alberto Martinez, Norberto Salazar, Lida Ansari, Hazel Neill, Luca Donetti, Francisco Lorenzo, Manuel Caño‐Garcia, Ruben Ortega, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Francisco Gamiz
Published in: Advanced Electronic Materials, Issue 11, 2025, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/AELM.202500079

Dual-Mode Wideband Receiver Operating with Frequency Modulated Impulse Radar Waveform

Author(s): Mykhailo Zarudniev; Laurent Ouvry; Gilles Masson; Arthur Paviot; Cedric Dehos; Pierre Courouve; David Lachartre
Published in: 2025 IEEE Radar Conference (RadarConf25), 2025, ISSN 2375-5318
Publisher: IEEE
DOI: 10.1109/RADARCONF2559087.2025.11205075

Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices

Author(s): Joel Kanyandekwe, Jean-Michel Hartmann, Justine Lespiaux, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Nicolas Gauthier, Alan Thouvard, Tim Biet, Ludovic Couture, Adrien Blot-Saby, Agathe Andre, Jérémy Marchand, Christophe Licitra, Remi Coquand, Alexis Royer, Tristan Dewolf, Haidar Al Dujaili, Andrea Lassenberger, Olivier Glorieux
Published in: ECS Transactions, Issue 114, 2024, ISSN 1938-5862
Publisher: The Electrochemical Society
DOI: 10.1149/11402.0253ECST

Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS₂ Devices Enabled by Plasma-Enhanced Atomic Layer Deposition

Author(s): Alberto Martínez; Carlos Márquez; Francisco Lorenzo; Francisco Gutiérrez; Manuel Caño-García; Jorge Ávila; José Carlos Galdón Gil; Ruben Ortega Lopez; Carlos Navarro; Luca Donetti; Francisco Gámiz
Published in: ACS Applied Materials & Interfaces, 2025, ISSN 0000-0000
Publisher: ACS Publications
DOI: 10.1021/ACSAMI.5C12014

Europe’s pilot line on fully depleted silicon-on-insulator technology (FAMES)

Author(s): Jean-René Lèquepeys, Dominique Noguet, Bruno Paing, Xavier Lemoine, Christophe Wyon, Marie-Claire Cyrille, Claire Fenouillet-Béranger, Eric Dupont-Nivet, Chrystel Deguet, Susana Bonnetier
Published in: Nature Reviews Electrical Engineering, Issue 2, 2025, ISSN 2948-1201
Publisher: Springer Science and Business Media LLC
DOI: 10.1038/S44287-025-00144-Y

Nanoscale SOI strain engineering: STRASS-enabled local stress optimization

Author(s): L.D. Mohgouk Zouknak; V-H. Le; N-P. Tran; F. Milesi; J.-M. Hartmann; S. Jarjayes; J. Lespiaux; A. Jannaud; F. Aussenac; N. Bernier; Ph. Rodriguez; L. Brunet; B. Duriez; M.C. Cyrille; C. Fenouillet-Beranger
Published in: Solid-State Electronics, 2025, ISSN 0000-0000
Publisher: EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109215

Investigation of compliance current effect on resistive switching properties in Ag/SiOx/Cr RRAM devices

Author(s): Piotr Wiśniewski, Piotr Jeżak, Aleksander Małkowski, Alicja Kądziela, Jakub Krzemiński, Robert Mroczyński
Published in: Solid-State Electronics, Issue 231, 2026, ISSN 0038-1101
Publisher: Elsevier BV
DOI: 10.1016/J.SSE.2025.109288

Wafer‐Scale Demonstration of Polycrystalline MoS₂ Growth on 200 mm Glass and SiO₂/Si Substrates by Plasma‐Enhanced Atomic Layer Deposition

Author(s): Julia Jagosz, Leander Willeke, Nils Gerke, Malte J. M. J. Becher, Paul Plate, Aleksander Kostka, Detlef Rogalla, Andreas Ostendorf, Claudia Bock
Published in: Advanced Materials Technologies, Issue 9, 2025, ISSN 2365-709X
Publisher: Wiley
DOI: 10.1002/ADMT.202400492

Pursuing the FD-SOI roadmap down to 10 nm and 7 nm nodes for high energy efficient, low power and RF/mmWave applications

Author(s): C. Fenouillet-Beranger; O. Rozeau; R. Chouk; O. Cueto; A-S. Royet; M. Charbonneau; B. Mohamad; L. Brévard; Z. Chalupa; A. Bond; F. Baudin; L. Brunet; P. Rodriguez; R. Gassilloud; T. Mota-Frutuoso; P. Pimenta-Barros; S. Beaurepaire; V. Lapras; J. Kanyandekwe; E. Petitprez; P. Brianceau; R. Segaud; null S.Verrun; D. Barge; P. Chausse; O. Billoint; W. Vandendaele; K. Romanjek; V. Loup; J-M. Hartmann; A. Magalhaes-Lucas; G. Garnier; A. Souhaité; G. Cibrario; B. Duriez; T. Poiroux; M-C. Cyrille; D. Noguet
Published in: Solid-State Electronics, 2026, ISSN 0000-0000
Publisher: Solid-State Electronics SSRN
DOI: 10.1016/J.SSE.2025.109264

Conference proceedings (11)

Ultra-Thin-Body and Buried Oxide FD-SOI next generation nodes and eNVM technologies for advanced IC design

Author(s): Claire Fenouillet-Beranger, Laurent Fesquet, Rihab Chouk, Gabriel Pares, Baudoin Martineau, Marie-Claire Cyrille, Thierry Poiroux, Olivier Billoint, Dominique Noguet
Published in: 2025 IEEE 28th International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS), 2025
Publisher: IEEE
DOI: 10.1109/DDECS63720.2025.11006678

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications

Author(s): D. Bosch, A. Viey, T. Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, L. Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. G
Published in: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025
Publisher: IEEE
DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631398

Process challenges of the STRASS technique to increase the electron mobility in advanced FDSOI nMOSFETs

Author(s): Milesi, F., Rodriguez, P., Zouknakl, L.D.M. et al.
Published in: MRS Advances, Issue 10, 174-178, 2025
Publisher: MRS Advances
DOI: 10.1557/S43580-025-01148-4

Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes

Author(s): A-S. Royet; R. Chouk; O. Cueto; J. Kanyandekwe; V. Lapras; M-A. Jaud
Published in: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Publisher: IEEE
DOI: 10.1109/SISPAD62626.2024.10733008

DTCO of advanced FDSOI CMOS technology by process emulation

Author(s): Aicha Boujnah; Olga Cueto; Marie-Anne Jaud; Sebastien Martinie; Franck Nallet; Claire Fenouillet-Beranger
Published in: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Publisher: IEEE
DOI: 10.1109/SISPAD62626.2024.10733323

High Performance 2.5V n&p 400°C SOI MOSFETs: a Breakthrough for versatile 3D Sequential Integration

Author(s): D. Bosch, W. Vandendaele, E-A Diallo, A-S Royet, A. Albouy, M. Opprecht, F-X Darras, V. Benevent, P. Maillard, O. Adami, M. Ribotta, S. Kerdilès, R. Gassilloud, X. Garros, P. Batude
Published in: 2025 IEEE International Electron Devices Meeting (IEDM), 2025
Publisher: IEEE
DOI: 10.1109/IEDM50572.2025.11353514

Comparative study of ALD MoS₂ on high-k dielectrics for the fabrication of nanowire FETs

Author(s): M. Rodriguez-Fano, J.M. Pedini, S. Cadot, H. Grampeix, T. Magis, F. Laulagnet, R. Souil, S. Barraud
Published in: 2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024
Publisher: IEEE
DOI: 10.1109/ESSERC62670.2024.10719452

First Radio-Frequency Circuits Fabricated in Top-Tier of a Full 3D Sequential Integration Process at mmW for 5G Applications

Author(s): J. Lugo-Alvarez, J.B. David, A. Siligaris, V. Puyal, G. Moritz, T. Mota-Frutuoso, V. Lapras, C. Fenouillet-Beranger, L. Brunet, P. Vincent, D. Lattard, X. Garros, F. Andrieu, P. Batude
Published in: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025
Publisher: IEEE
DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631483

ITO Contact Optimization for Enhancement Mode BEOL MOSFETs

Author(s): Karl-Magnus Persson, Patrik Eskelinen, Oscar Kaatranen, Olli-Pekka Kilpi
Published in: 2025 Device Research Conference (DRC), 2025
Publisher: IEEE
DOI: 10.1109/DRC66027.2025.11105747

Silicidation of Next Generation of FD-SOI Devices: Effect of P Doping Level in epitaxial Si:P Films

Author(s): H. Grampeix
Published in: 2024
Publisher: MAM2024

Analysis of the key parameters of box creep process for advanced FDSOI devices

Author(s): Sylvie Jarjayes, Laurent Brunet, Philippe Rodriguez
Published in: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2024
Publisher: IEEE
DOI: 10.1109/EUROSIME60745.2024.10491442