FD-SOI Pilot Line for Applications with embedded non-volatile Memories, RF, 3D integration and PMIC, to ensure European Sovereignty

Project Information

FAMES

Grant agreement ID: 101182279

DOI

10.3030/101182279

EC signature date 3 December 2024

Start date 1 December 2023

End date 31 December 2028

Funded under

• Digital, Industry and Space

Total cost

€ 433 622 083,00

EU contribution

€ 216 811 041,50

Coordinated by

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Documents, reports (3)

D1.4.3: Non-volatile memory and 3D integration Process Design-Kit add-on for MAD305 MPW test vehicle

Delivery of the Process Design-Kit add-on to set-up the MAD305 maskset

D11.1.1: LCA methods

Definition of the relevant LCA methodology

D13.2: Initial Dissemination and Communication Plan

The Communication and Dissemination plan will include dissemination goals, information to be disseminated, targeted stakeholders, timelines and KPIs.

Publications

Peer reviewed articles (2)

Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI

Author(s): Justine Lespiaux, Joël Kanyandekwe, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Alan Thouvard, Tim Biet
Published in: ECS Transactions, Issue Volume 114, Number 2, 2024, ISSN 1938-5862
Publisher: IOP Publishing
DOI: 10.1149/11402.0271ECST

Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices

Author(s): Joel Kanyandekwe, Jean-Michel Hartmann, Justine Lespiaux, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Nicolas Gauthier, Alan Thouvard, Tim Biet, Ludovic Couture, Adrien Blot-Saby, Agathe Andre, Jérémy Marchand, Christophe Licitra, Remi Coquand, Alexis Royer, Tristan Dewolf, Haidar Al Dujaili, Andrea Lassenberger, Olivier Glorieux
Published in: ECS Transactions, Issue 114, 2024, ISSN 1938-5862
Publisher: The Electrochemical Society
DOI: 10.1149/11402.0253ECST

Conference proceedings (6)

Process challenges of the STRASS technique to increase the electron mobility in advanced FDSOI nMOSFETs

Author(s): Milesi, F., Rodriguez, P., Zouknakl, L.D.M. et al.
Published in: MRS Advances, Issue 10, 174-178, 2025
Publisher: MRS Advances
DOI: 10.1557/S43580-025-01148-4

Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes

Author(s): A-S. Royet; R. Chouk; O. Cueto; J. Kanyandekwe; V. Lapras; M-A. Jaud
Published in: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Publisher: IEEE
DOI: 10.1109/SISPAD62626.2024.10733008

Analysis of the key parameters of box creep process for advanced FDSOI devices

Author(s): Jarjayes, Sylvie; Brunet, Laurent; Rodriguez, Philippe
Published in: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2024, ISSN 2833-8596
Publisher: IEEE
DOI: 10.1109/EUROSIME60745.2024.10491442

DTCO of advanced FDSOI CMOS technology by process emulation

Author(s): Aicha Boujnah; Olga Cueto; Marie-Anne Jaud; Sebastien Martinie; Franck Nallet; Claire Fenouillet-Beranger
Published in: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Publisher: IEEE
DOI: 10.1109/SISPAD62626.2024.10733323

Silicidation of Next Generation of FD-SOI Devices: Effect of P Doping Level in epitaxial Si:P Films

Author(s): H. Grampeix
Published in: 2024
Publisher: MAM2024

Analysis of the key parameters of box creep process for advanced FDSOI devices

Author(s): S. Jarjayes, Laurent Brunet, Philippe Rodriguez
Published in: 2024
Publisher: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
DOI: 10.1109/EuroSimE60745.2024.10491442