FD-SOI Pilot Line for Applications with embedded non-volatile Memories, RF, 3D integration and PMIC, to ensure European Sovereignty

Informazioni relative al progetto

FAMES

ID dell’accordo di sovvenzione: 101182279

DOI

10.3030/101182279

Data della firma CE 3 Dicembre 2024

Data di avvio 1 Dicembre 2023

Data di completamento 31 Dicembre 2028

Finanziato da

• Digital, Industry and Space

Costo totale

€ 433 622 083,00

Contributo UE

€ 216 811 041,50

Coordinato da

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Documents, reports (3)

D1.4.3: Non-volatile memory and 3D integration Process Design-Kit add-on for MAD305 MPW test vehicle

Delivery of the Process Design-Kit add-on to set-up the MAD305 maskset

D11.1.1: LCA methods

Definition of the relevant LCA methodology

D13.2: Initial Dissemination and Communication Plan

The Communication and Dissemination plan will include dissemination goals, information to be disseminated, targeted stakeholders, timelines and KPIs.

Pubblicazioni

Peer reviewed articles (16)

Ising-inspired invertible adders using coupled phase-locked CMOS ring oscillators

Autori: Ali Bazzi, Hugo Levices, Philippe Talatchian, Franck Badets, Louis Hutin
Pubblicato in: Physical Review Applied, Numero 24, 2025, ISSN 2331-7019
Editore: American Physical Society (APS)
DOI: 10.1103/8XC2-VKK3

300 Mm sSOI engineering with ultra thin buried oxide

Autori: D. Barge; M. Gallard; J.-M. Hartmann; F. Fournel; V. Loup; F. Mazen; E. Nolot; P. Hauchecorne; J. Sturm; V.H. Le; I. Huyet; D. Delprat; F. Boedt; F. Servant
Pubblicato in: Solid-State Electronics, 2026, ISSN 0000-0000
Editore: EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109307

Toward full relaxation of sSOI substrates for PFET device fabrication

Autori: N-P. Tran; F. Milesi; V-H. Le; L-D. Mohgouk Zouknak; P. Dezest; Ph. Rodriguez; L. Brunet; B. Duriez; M-C. Cyrille; C. Fenouillet-Beranger
Pubblicato in: Solid-State Electronics, Numero Volume 229, November 2025, 109196, 2025, ISSN 0000-0000
Editore: 2025 Elsevier Ltd for EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109196

Bayesian continual learning and forgetting in neural networks

Autori: Djohan Bonnet, Kellian Cottart, Tifenn Hirtzlin, Tarcisius Januel, Thomas Dalgaty, Elisa Vianello, Damien Querlioz
Pubblicato in: Nature Communications, Numero 16, 2025, ISSN 2041-1723
Editore: Springer Science and Business Media LLC
DOI: 10.1038/S41467-025-64601-W

Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI

Autori: Justine Lespiaux, Joël Kanyandekwe, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Alan Thouvard, Tim Biet
Pubblicato in: ECS Transactions, Numero Volume 114, Number 2, 2024, ISSN 1938-5862
Editore: IOP Publishing
DOI: 10.1149/11402.0271ECST

Modeling of RRAM based PUF: a case study

Autori: Kamil Ber, Piotr Wiśniewski
Pubblicato in: Solid-State Electronics, Numero 231, 2026, ISSN 0038-1101
Editore: Elsevier BV
DOI: 10.1016/J.SSE.2025.109267

Influence of Dopant and Si:B Cap on Ni(Pt)-Based Silicidation of SiGe:B for Next Generation PMOS FDSOI Devices

Autori: Helen Grampeix; Théo Cabaret; Justine Lespiaux; Patrice Gergaud; Nicolas Gauthier; Philippe Rodriguez
Pubblicato in: 2025 22nd International Workshop on Junction Technology (IWJT), 2025, ISSN 0000-0000
Editore: IEEE
DOI: 10.23919/IWJT66253.2025.11072894

On the Enhanced p‐Type Performance of Back‐Gated WS₂ Devices

Autori: Carlos Marquez, Farzan Gity, Jose C. Galdon, Alberto Martinez, Norberto Salazar, Lida Ansari, Hazel Neill, Luca Donetti, Francisco Lorenzo, Manuel Caño‐Garcia, Ruben Ortega, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Francisco Gamiz
Pubblicato in: Advanced Electronic Materials, Numero 11, 2025, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/AELM.202500079

Dual-Mode Wideband Receiver Operating with Frequency Modulated Impulse Radar Waveform

Autori: Mykhailo Zarudniev; Laurent Ouvry; Gilles Masson; Arthur Paviot; Cedric Dehos; Pierre Courouve; David Lachartre
Pubblicato in: 2025 IEEE Radar Conference (RadarConf25), 2025, ISSN 2375-5318
Editore: IEEE
DOI: 10.1109/RADARCONF2559087.2025.11205075

Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices

Autori: Joel Kanyandekwe, Jean-Michel Hartmann, Justine Lespiaux, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Nicolas Gauthier, Alan Thouvard, Tim Biet, Ludovic Couture, Adrien Blot-Saby, Agathe Andre, Jérémy Marchand, Christophe Licitra, Remi Coquand, Alexis Royer, Tristan Dewolf, Haidar Al Dujaili, Andrea Lassenberger, Olivier Glorieux
Pubblicato in: ECS Transactions, Numero 114, 2024, ISSN 1938-5862
Editore: The Electrochemical Society
DOI: 10.1149/11402.0253ECST

Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS₂ Devices Enabled by Plasma-Enhanced Atomic Layer Deposition

Autori: Alberto Martínez; Carlos Márquez; Francisco Lorenzo; Francisco Gutiérrez; Manuel Caño-García; Jorge Ávila; José Carlos Galdón Gil; Ruben Ortega Lopez; Carlos Navarro; Luca Donetti; Francisco Gámiz
Pubblicato in: ACS Applied Materials & Interfaces, 2025, ISSN 0000-0000
Editore: ACS Publications
DOI: 10.1021/ACSAMI.5C12014

Europe’s pilot line on fully depleted silicon-on-insulator technology (FAMES)

Autori: Jean-René Lèquepeys, Dominique Noguet, Bruno Paing, Xavier Lemoine, Christophe Wyon, Marie-Claire Cyrille, Claire Fenouillet-Béranger, Eric Dupont-Nivet, Chrystel Deguet, Susana Bonnetier
Pubblicato in: Nature Reviews Electrical Engineering, Numero 2, 2025, ISSN 2948-1201
Editore: Springer Science and Business Media LLC
DOI: 10.1038/S44287-025-00144-Y

Nanoscale SOI strain engineering: STRASS-enabled local stress optimization

Autori: L.D. Mohgouk Zouknak; V-H. Le; N-P. Tran; F. Milesi; J.-M. Hartmann; S. Jarjayes; J. Lespiaux; A. Jannaud; F. Aussenac; N. Bernier; Ph. Rodriguez; L. Brunet; B. Duriez; M.C. Cyrille; C. Fenouillet-Beranger
Pubblicato in: Solid-State Electronics, 2025, ISSN 0000-0000
Editore: EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109215

Investigation of compliance current effect on resistive switching properties in Ag/SiOx/Cr RRAM devices

Autori: Piotr Wiśniewski, Piotr Jeżak, Aleksander Małkowski, Alicja Kądziela, Jakub Krzemiński, Robert Mroczyński
Pubblicato in: Solid-State Electronics, Numero 231, 2026, ISSN 0038-1101
Editore: Elsevier BV
DOI: 10.1016/J.SSE.2025.109288

Wafer‐Scale Demonstration of Polycrystalline MoS₂ Growth on 200 mm Glass and SiO₂/Si Substrates by Plasma‐Enhanced Atomic Layer Deposition

Autori: Julia Jagosz, Leander Willeke, Nils Gerke, Malte J. M. J. Becher, Paul Plate, Aleksander Kostka, Detlef Rogalla, Andreas Ostendorf, Claudia Bock
Pubblicato in: Advanced Materials Technologies, Numero 9, 2025, ISSN 2365-709X
Editore: Wiley
DOI: 10.1002/ADMT.202400492

Pursuing the FD-SOI roadmap down to 10 nm and 7 nm nodes for high energy efficient, low power and RF/mmWave applications

Autori: C. Fenouillet-Beranger; O. Rozeau; R. Chouk; O. Cueto; A-S. Royet; M. Charbonneau; B. Mohamad; L. Brévard; Z. Chalupa; A. Bond; F. Baudin; L. Brunet; P. Rodriguez; R. Gassilloud; T. Mota-Frutuoso; P. Pimenta-Barros; S. Beaurepaire; V. Lapras; J. Kanyandekwe; E. Petitprez; P. Brianceau; R. Segaud; null S.Verrun; D. Barge; P. Chausse; O. Billoint; W. Vandendaele; K. Romanjek; V. Loup; J-M. Hartmann; A. Magalhaes-Lucas; G. Garnier; A. Souhaité; G. Cibrario; B. Duriez; T. Poiroux; M-C. Cyrille; D. Noguet
Pubblicato in: Solid-State Electronics, 2026, ISSN 0000-0000
Editore: Solid-State Electronics SSRN
DOI: 10.1016/J.SSE.2025.109264

Conference proceedings (11)

Ultra-Thin-Body and Buried Oxide FD-SOI next generation nodes and eNVM technologies for advanced IC design

Autori: Claire Fenouillet-Beranger, Laurent Fesquet, Rihab Chouk, Gabriel Pares, Baudoin Martineau, Marie-Claire Cyrille, Thierry Poiroux, Olivier Billoint, Dominique Noguet
Pubblicato in: 2025 IEEE 28th International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS), 2025
Editore: IEEE
DOI: 10.1109/DDECS63720.2025.11006678

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications

Autori: D. Bosch, A. Viey, T. Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, L. Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. G
Pubblicato in: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025
Editore: IEEE
DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631398

Process challenges of the STRASS technique to increase the electron mobility in advanced FDSOI nMOSFETs

Autori: Milesi, F., Rodriguez, P., Zouknakl, L.D.M. et al.
Pubblicato in: MRS Advances, Numero 10, 174-178, 2025
Editore: MRS Advances
DOI: 10.1557/S43580-025-01148-4

Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes

Autori: A-S. Royet; R. Chouk; O. Cueto; J. Kanyandekwe; V. Lapras; M-A. Jaud
Pubblicato in: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Editore: IEEE
DOI: 10.1109/SISPAD62626.2024.10733008

DTCO of advanced FDSOI CMOS technology by process emulation

Autori: Aicha Boujnah; Olga Cueto; Marie-Anne Jaud; Sebastien Martinie; Franck Nallet; Claire Fenouillet-Beranger
Pubblicato in: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Editore: IEEE
DOI: 10.1109/SISPAD62626.2024.10733323

High Performance 2.5V n&p 400°C SOI MOSFETs: a Breakthrough for versatile 3D Sequential Integration

Autori: D. Bosch, W. Vandendaele, E-A Diallo, A-S Royet, A. Albouy, M. Opprecht, F-X Darras, V. Benevent, P. Maillard, O. Adami, M. Ribotta, S. Kerdilès, R. Gassilloud, X. Garros, P. Batude
Pubblicato in: 2025 IEEE International Electron Devices Meeting (IEDM), 2025
Editore: IEEE
DOI: 10.1109/IEDM50572.2025.11353514

Comparative study of ALD MoS₂ on high-k dielectrics for the fabrication of nanowire FETs

Autori: M. Rodriguez-Fano, J.M. Pedini, S. Cadot, H. Grampeix, T. Magis, F. Laulagnet, R. Souil, S. Barraud
Pubblicato in: 2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024
Editore: IEEE
DOI: 10.1109/ESSERC62670.2024.10719452

First Radio-Frequency Circuits Fabricated in Top-Tier of a Full 3D Sequential Integration Process at mmW for 5G Applications

Autori: J. Lugo-Alvarez, J.B. David, A. Siligaris, V. Puyal, G. Moritz, T. Mota-Frutuoso, V. Lapras, C. Fenouillet-Beranger, L. Brunet, P. Vincent, D. Lattard, X. Garros, F. Andrieu, P. Batude
Pubblicato in: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025
Editore: IEEE
DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631483

ITO Contact Optimization for Enhancement Mode BEOL MOSFETs

Autori: Karl-Magnus Persson, Patrik Eskelinen, Oscar Kaatranen, Olli-Pekka Kilpi
Pubblicato in: 2025 Device Research Conference (DRC), 2025
Editore: IEEE
DOI: 10.1109/DRC66027.2025.11105747

Silicidation of Next Generation of FD-SOI Devices: Effect of P Doping Level in epitaxial Si:P Films

Autori: H. Grampeix
Pubblicato in: 2024
Editore: MAM2024

Analysis of the key parameters of box creep process for advanced FDSOI devices

Autori: Sylvie Jarjayes, Laurent Brunet, Philippe Rodriguez
Pubblicato in: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2024
Editore: IEEE
DOI: 10.1109/EUROSIME60745.2024.10491442