FD-SOI Pilot Line for Applications with embedded non-volatile Memories, RF, 3D integration and PMIC, to ensure European Sovereignty

Informazioni relative al progetto

FAMES

ID dell’accordo di sovvenzione: 101182279

DOI

10.3030/101182279

Data della firma CE 3 Dicembre 2024

Data di avvio 1 Dicembre 2023

Data di completamento 31 Dicembre 2028

Finanziato da

• Digital, Industry and Space

Costo totale

€ 433 622 083,00

Contributo UE

€ 216 811 041,50

Coordinato da

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Documents, reports (3)

D1.4.3: Non-volatile memory and 3D integration Process Design-Kit add-on for MAD305 MPW test vehicle

Delivery of the Process Design-Kit add-on to set-up the MAD305 maskset

D11.1.1: LCA methods

Definition of the relevant LCA methodology

D13.2: Initial Dissemination and Communication Plan

The Communication and Dissemination plan will include dissemination goals, information to be disseminated, targeted stakeholders, timelines and KPIs.

Pubblicazioni

Peer reviewed articles (2)

Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI

Autori: Justine Lespiaux, Joël Kanyandekwe, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Alan Thouvard, Tim Biet
Pubblicato in: ECS Transactions, Numero Volume 114, Number 2, 2024, ISSN 1938-5862
Editore: IOP Publishing
DOI: 10.1149/11402.0271ECST

Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices

Autori: Joel Kanyandekwe, Jean-Michel Hartmann, Justine Lespiaux, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Nicolas Gauthier, Alan Thouvard, Tim Biet, Ludovic Couture, Adrien Blot-Saby, Agathe Andre, Jérémy Marchand, Christophe Licitra, Remi Coquand, Alexis Royer, Tristan Dewolf, Haidar Al Dujaili, Andrea Lassenberger, Olivier Glorieux
Pubblicato in: ECS Transactions, Numero 114, 2024, ISSN 1938-5862
Editore: The Electrochemical Society
DOI: 10.1149/11402.0253ECST

Conference proceedings (6)

Process challenges of the STRASS technique to increase the electron mobility in advanced FDSOI nMOSFETs

Autori: Milesi, F., Rodriguez, P., Zouknakl, L.D.M. et al.
Pubblicato in: MRS Advances, Numero 10, 174-178, 2025
Editore: MRS Advances
DOI: 10.1557/S43580-025-01148-4

Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes

Autori: A-S. Royet; R. Chouk; O. Cueto; J. Kanyandekwe; V. Lapras; M-A. Jaud
Pubblicato in: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Editore: IEEE
DOI: 10.1109/SISPAD62626.2024.10733008

Analysis of the key parameters of box creep process for advanced FDSOI devices

Autori: Jarjayes, Sylvie; Brunet, Laurent; Rodriguez, Philippe
Pubblicato in: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2024, ISSN 2833-8596
Editore: IEEE
DOI: 10.1109/EUROSIME60745.2024.10491442

DTCO of advanced FDSOI CMOS technology by process emulation

Autori: Aicha Boujnah; Olga Cueto; Marie-Anne Jaud; Sebastien Martinie; Franck Nallet; Claire Fenouillet-Beranger
Pubblicato in: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Editore: IEEE
DOI: 10.1109/SISPAD62626.2024.10733323

Silicidation of Next Generation of FD-SOI Devices: Effect of P Doping Level in epitaxial Si:P Films

Autori: H. Grampeix
Pubblicato in: 2024
Editore: MAM2024

Analysis of the key parameters of box creep process for advanced FDSOI devices

Autori: S. Jarjayes, Laurent Brunet, Philippe Rodriguez
Pubblicato in: 2024
Editore: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
DOI: 10.1109/EuroSimE60745.2024.10491442