FD-SOI Pilot Line for Applications with embedded non-volatile Memories, RF, 3D integration and PMIC, to ensure European Sovereignty

Informacje na temat projektu

FAMES

Identyfikator umowy o grant: 101182279

DOI

10.3030/101182279

Data podpisania przez KE 3 Grudnia 2024

Data rozpoczęcia 1 Grudnia 2023

Data zakończenia 31 Grudnia 2028

Finansowanie w ramach

• Digital, Industry and Space

Koszt całkowity

€ 433 622 083,00

Wkład UE

€ 216 811 041,50

Koordynowany przez

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

CORDIS oferuje możliwość skorzystania z odnośników do publicznie dostępnych publikacji i rezultatów projektów realizowanych w ramach programów ramowych HORYZONT.

Odnośniki do rezultatów i publikacji związanych z poszczególnymi projektami 7PR, a także odnośniki do niektórych konkretnych kategorii wyników, takich jak zbiory danych i oprogramowanie, są dynamicznie pobierane z systemu OpenAIRE .

Rezultaty

Documents, reports (3)

D1.4.3: Non-volatile memory and 3D integration Process Design-Kit add-on for MAD305 MPW test vehicle

Delivery of the Process Design-Kit add-on to set-up the MAD305 maskset

D11.1.1: LCA methods

Definition of the relevant LCA methodology

D13.2: Initial Dissemination and Communication Plan

The Communication and Dissemination plan will include dissemination goals, information to be disseminated, targeted stakeholders, timelines and KPIs.

Publikacje

Peer reviewed articles (16)

Ising-inspired invertible adders using coupled phase-locked CMOS ring oscillators

Autorzy: Ali Bazzi, Hugo Levices, Philippe Talatchian, Franck Badets, Louis Hutin
Opublikowane w: Physical Review Applied, Numer 24, 2025, ISSN 2331-7019
Wydawca: American Physical Society (APS)
DOI: 10.1103/8XC2-VKK3

300 Mm sSOI engineering with ultra thin buried oxide

Autorzy: D. Barge; M. Gallard; J.-M. Hartmann; F. Fournel; V. Loup; F. Mazen; E. Nolot; P. Hauchecorne; J. Sturm; V.H. Le; I. Huyet; D. Delprat; F. Boedt; F. Servant
Opublikowane w: Solid-State Electronics, 2026, ISSN 0000-0000
Wydawca: EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109307

Toward full relaxation of sSOI substrates for PFET device fabrication

Autorzy: N-P. Tran; F. Milesi; V-H. Le; L-D. Mohgouk Zouknak; P. Dezest; Ph. Rodriguez; L. Brunet; B. Duriez; M-C. Cyrille; C. Fenouillet-Beranger
Opublikowane w: Solid-State Electronics, Numer Volume 229, November 2025, 109196, 2025, ISSN 0000-0000
Wydawca: 2025 Elsevier Ltd for EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109196

Bayesian continual learning and forgetting in neural networks

Autorzy: Djohan Bonnet, Kellian Cottart, Tifenn Hirtzlin, Tarcisius Januel, Thomas Dalgaty, Elisa Vianello, Damien Querlioz
Opublikowane w: Nature Communications, Numer 16, 2025, ISSN 2041-1723
Wydawca: Springer Science and Business Media LLC
DOI: 10.1038/S41467-025-64601-W

Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI

Autorzy: Justine Lespiaux, Joël Kanyandekwe, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Alan Thouvard, Tim Biet
Opublikowane w: ECS Transactions, Numer Volume 114, Number 2, 2024, ISSN 1938-5862
Wydawca: IOP Publishing
DOI: 10.1149/11402.0271ECST

Modeling of RRAM based PUF: a case study

Autorzy: Kamil Ber, Piotr Wiśniewski
Opublikowane w: Solid-State Electronics, Numer 231, 2026, ISSN 0038-1101
Wydawca: Elsevier BV
DOI: 10.1016/J.SSE.2025.109267

Influence of Dopant and Si:B Cap on Ni(Pt)-Based Silicidation of SiGe:B for Next Generation PMOS FDSOI Devices

Autorzy: Helen Grampeix; Théo Cabaret; Justine Lespiaux; Patrice Gergaud; Nicolas Gauthier; Philippe Rodriguez
Opublikowane w: 2025 22nd International Workshop on Junction Technology (IWJT), 2025, ISSN 0000-0000
Wydawca: IEEE
DOI: 10.23919/IWJT66253.2025.11072894

On the Enhanced p‐Type Performance of Back‐Gated WS₂ Devices

Autorzy: Carlos Marquez, Farzan Gity, Jose C. Galdon, Alberto Martinez, Norberto Salazar, Lida Ansari, Hazel Neill, Luca Donetti, Francisco Lorenzo, Manuel Caño‐Garcia, Ruben Ortega, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Francisco Gamiz
Opublikowane w: Advanced Electronic Materials, Numer 11, 2025, ISSN 2199-160X
Wydawca: Wiley
DOI: 10.1002/AELM.202500079

Dual-Mode Wideband Receiver Operating with Frequency Modulated Impulse Radar Waveform

Autorzy: Mykhailo Zarudniev; Laurent Ouvry; Gilles Masson; Arthur Paviot; Cedric Dehos; Pierre Courouve; David Lachartre
Opublikowane w: 2025 IEEE Radar Conference (RadarConf25), 2025, ISSN 2375-5318
Wydawca: IEEE
DOI: 10.1109/RADARCONF2559087.2025.11205075

Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices

Autorzy: Joel Kanyandekwe, Jean-Michel Hartmann, Justine Lespiaux, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Nicolas Gauthier, Alan Thouvard, Tim Biet, Ludovic Couture, Adrien Blot-Saby, Agathe Andre, Jérémy Marchand, Christophe Licitra, Remi Coquand, Alexis Royer, Tristan Dewolf, Haidar Al Dujaili, Andrea Lassenberger, Olivier Glorieux
Opublikowane w: ECS Transactions, Numer 114, 2024, ISSN 1938-5862
Wydawca: The Electrochemical Society
DOI: 10.1149/11402.0253ECST

Wafer-Scale Demonstration of BEOL-Compatible Ambipolar MoS₂ Devices Enabled by Plasma-Enhanced Atomic Layer Deposition

Autorzy: Alberto Martínez; Carlos Márquez; Francisco Lorenzo; Francisco Gutiérrez; Manuel Caño-García; Jorge Ávila; José Carlos Galdón Gil; Ruben Ortega Lopez; Carlos Navarro; Luca Donetti; Francisco Gámiz
Opublikowane w: ACS Applied Materials & Interfaces, 2025, ISSN 0000-0000
Wydawca: ACS Publications
DOI: 10.1021/ACSAMI.5C12014

Europe’s pilot line on fully depleted silicon-on-insulator technology (FAMES)

Autorzy: Jean-René Lèquepeys, Dominique Noguet, Bruno Paing, Xavier Lemoine, Christophe Wyon, Marie-Claire Cyrille, Claire Fenouillet-Béranger, Eric Dupont-Nivet, Chrystel Deguet, Susana Bonnetier
Opublikowane w: Nature Reviews Electrical Engineering, Numer 2, 2025, ISSN 2948-1201
Wydawca: Springer Science and Business Media LLC
DOI: 10.1038/S44287-025-00144-Y

Nanoscale SOI strain engineering: STRASS-enabled local stress optimization

Autorzy: L.D. Mohgouk Zouknak; V-H. Le; N-P. Tran; F. Milesi; J.-M. Hartmann; S. Jarjayes; J. Lespiaux; A. Jannaud; F. Aussenac; N. Bernier; Ph. Rodriguez; L. Brunet; B. Duriez; M.C. Cyrille; C. Fenouillet-Beranger
Opublikowane w: Solid-State Electronics, 2025, ISSN 0000-0000
Wydawca: EuroSOI-ULIS 2025’ published in Solid State Electronics.
DOI: 10.1016/J.SSE.2025.109215

Investigation of compliance current effect on resistive switching properties in Ag/SiOx/Cr RRAM devices

Autorzy: Piotr Wiśniewski, Piotr Jeżak, Aleksander Małkowski, Alicja Kądziela, Jakub Krzemiński, Robert Mroczyński
Opublikowane w: Solid-State Electronics, Numer 231, 2026, ISSN 0038-1101
Wydawca: Elsevier BV
DOI: 10.1016/J.SSE.2025.109288

Wafer‐Scale Demonstration of Polycrystalline MoS₂ Growth on 200 mm Glass and SiO₂/Si Substrates by Plasma‐Enhanced Atomic Layer Deposition

Autorzy: Julia Jagosz, Leander Willeke, Nils Gerke, Malte J. M. J. Becher, Paul Plate, Aleksander Kostka, Detlef Rogalla, Andreas Ostendorf, Claudia Bock
Opublikowane w: Advanced Materials Technologies, Numer 9, 2025, ISSN 2365-709X
Wydawca: Wiley
DOI: 10.1002/ADMT.202400492

Pursuing the FD-SOI roadmap down to 10 nm and 7 nm nodes for high energy efficient, low power and RF/mmWave applications

Autorzy: C. Fenouillet-Beranger; O. Rozeau; R. Chouk; O. Cueto; A-S. Royet; M. Charbonneau; B. Mohamad; L. Brévard; Z. Chalupa; A. Bond; F. Baudin; L. Brunet; P. Rodriguez; R. Gassilloud; T. Mota-Frutuoso; P. Pimenta-Barros; S. Beaurepaire; V. Lapras; J. Kanyandekwe; E. Petitprez; P. Brianceau; R. Segaud; null S.Verrun; D. Barge; P. Chausse; O. Billoint; W. Vandendaele; K. Romanjek; V. Loup; J-M. Hartmann; A. Magalhaes-Lucas; G. Garnier; A. Souhaité; G. Cibrario; B. Duriez; T. Poiroux; M-C. Cyrille; D. Noguet
Opublikowane w: Solid-State Electronics, 2026, ISSN 0000-0000
Wydawca: Solid-State Electronics SSRN
DOI: 10.1016/J.SSE.2025.109264

Conference proceedings (11)

Ultra-Thin-Body and Buried Oxide FD-SOI next generation nodes and eNVM technologies for advanced IC design

Autorzy: Claire Fenouillet-Beranger, Laurent Fesquet, Rihab Chouk, Gabriel Pares, Baudoin Martineau, Marie-Claire Cyrille, Thierry Poiroux, Olivier Billoint, Dominique Noguet
Opublikowane w: 2025 IEEE 28th International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS), 2025
Wydawca: IEEE
DOI: 10.1109/DDECS63720.2025.11006678

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications

Autorzy: D. Bosch, A. Viey, T. Mota Frutuoso, P. Lheritier, C. Licitra, N. Zerhouni, A. Albouy, L. Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. G
Opublikowane w: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025
Wydawca: IEEE
DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631398

Process challenges of the STRASS technique to increase the electron mobility in advanced FDSOI nMOSFETs

Autorzy: Milesi, F., Rodriguez, P., Zouknakl, L.D.M. et al.
Opublikowane w: MRS Advances, Numer 10, 174-178, 2025
Wydawca: MRS Advances
DOI: 10.1557/S43580-025-01148-4

Calibration Insights of Phosphorus Diffusion Model for NMOS FDSOI : Pathway to Advanced Technology Nodes

Autorzy: A-S. Royet; R. Chouk; O. Cueto; J. Kanyandekwe; V. Lapras; M-A. Jaud
Opublikowane w: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Wydawca: IEEE
DOI: 10.1109/SISPAD62626.2024.10733008

DTCO of advanced FDSOI CMOS technology by process emulation

Autorzy: Aicha Boujnah; Olga Cueto; Marie-Anne Jaud; Sebastien Martinie; Franck Nallet; Claire Fenouillet-Beranger
Opublikowane w: 2024 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2024
Wydawca: IEEE
DOI: 10.1109/SISPAD62626.2024.10733323

High Performance 2.5V n&p 400°C SOI MOSFETs: a Breakthrough for versatile 3D Sequential Integration

Autorzy: D. Bosch, W. Vandendaele, E-A Diallo, A-S Royet, A. Albouy, M. Opprecht, F-X Darras, V. Benevent, P. Maillard, O. Adami, M. Ribotta, S. Kerdilès, R. Gassilloud, X. Garros, P. Batude
Opublikowane w: 2025 IEEE International Electron Devices Meeting (IEDM), 2025
Wydawca: IEEE
DOI: 10.1109/IEDM50572.2025.11353514

Comparative study of ALD MoS₂ on high-k dielectrics for the fabrication of nanowire FETs

Autorzy: M. Rodriguez-Fano, J.M. Pedini, S. Cadot, H. Grampeix, T. Magis, F. Laulagnet, R. Souil, S. Barraud
Opublikowane w: 2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024
Wydawca: IEEE
DOI: 10.1109/ESSERC62670.2024.10719452

First Radio-Frequency Circuits Fabricated in Top-Tier of a Full 3D Sequential Integration Process at mmW for 5G Applications

Autorzy: J. Lugo-Alvarez, J.B. David, A. Siligaris, V. Puyal, G. Moritz, T. Mota-Frutuoso, V. Lapras, C. Fenouillet-Beranger, L. Brunet, P. Vincent, D. Lattard, X. Garros, F. Andrieu, P. Batude
Opublikowane w: 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025
Wydawca: IEEE
DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631483

ITO Contact Optimization for Enhancement Mode BEOL MOSFETs

Autorzy: Karl-Magnus Persson, Patrik Eskelinen, Oscar Kaatranen, Olli-Pekka Kilpi
Opublikowane w: 2025 Device Research Conference (DRC), 2025
Wydawca: IEEE
DOI: 10.1109/DRC66027.2025.11105747

Silicidation of Next Generation of FD-SOI Devices: Effect of P Doping Level in epitaxial Si:P Films

Autorzy: H. Grampeix
Opublikowane w: 2024
Wydawca: MAM2024

Analysis of the key parameters of box creep process for advanced FDSOI devices

Autorzy: Sylvie Jarjayes, Laurent Brunet, Philippe Rodriguez
Opublikowane w: 2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2024
Wydawca: IEEE
DOI: 10.1109/EUROSIME60745.2024.10491442