WBG Pilot Line

Project Information

WBGPilotLine

Grant agreement ID: 101183211

DOI

10.3030/101183211

EC signature date 9 June 2025

Start date 1 June 2025

End date 31 May 2030

Funded under

• Digital, Industry and Space

Total cost

€ 98 860 424,75

EU contribution

€ 49 430 212,38

Coordinated by

CONSIGLIO NAZIONALE DELLE RICERCHE
Italy

CORDIS provides links to public deliverables and publications of HORIZON projects.

Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Peer reviewed articles (11)

Superior quality of n− GaN epilayer grown on ammonothermal substrate accessed by DLTS

Author(s): P. F.P.P. Rocha, K. Nadaud, G. Greco, T. Slimani Tlemcani, M. Bah, M. Bockowski, F. Bartoli, E. Frayssinet, Y. Cordier, F. Roccaforte, D. Alquier
Published in: Micro and Nanostructures, Issue 218, 2026, ISSN 2773-0123
Publisher: Elsevier BV
DOI: 10.1016/J.MICRNA.2026.208797

Heteroepitaxial 3C-SiC for MEMS Applications

Author(s): Angela Garofalo, Annamaria Muoio, Luca Belsito, Sergio Sapienza, Matteo Ferri, Alberto Roncaglia, Francesco La Via
Published in: Micromachines, Issue 17, 2026, ISSN 2072-666X
Publisher: MDPI AG
DOI: 10.3390/MI17040502

Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam

Author(s): Akira Uedono, Shoji Ishibashi, Kohei Shima, Shigefusa F. Chichibu, Kacper Sierakowski, Makoto Oishi, Noriyuki Okada, Takuro Nagai, Michal Bockowski
Published in: Journal of Crystal Growth, Issue 688, 2026, ISSN 0022-0248
Publisher: Elsevier BV
DOI: 10.1016/J.JCRYSGRO.2026.128622

Wide reverse-bias response of a 100-µm 4H-SiC P-i-N detector: UV-TCT probing, α sources and D–T neutrons

Author(s): Alfio Samuele Mancuso, Ivan Lopez Paz, Matteo Hakeem Kushoro, Saverio De Luca, Erik Gallo, Marcio Jiménez, Neil Moffat, Annamaria Muoio, Giulio Pellegrini, Martín Pérez, Eleonora Quadrivi, Enrico Sangregorio, Antonio Trotta, Salvatore Tudisco, Silvia Vanellone, Francesco La Via
Published in: Measurement, Issue 282, 2026, ISSN 0263-2241
Publisher: Elsevier BV
DOI: 10.1016/J.MEASUREMENT.2026.121924

Modeling of Non-Ideal Ni/Ga ₂ O ₃ Schottky Contacts by Two-Barrier Thermionic Emission Model

Author(s): G. Greco, S. Milazzo, S. E. Panasci, P. Fiorenza, L. Kirste, F. Giannazzo, F. Iucolano, F. Roccaforte
Published in: IEEE Transactions on Electron Devices, 2026, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2026.3674869

Microstructure-Driven Loss Mechanisms and Tensor-Based FEM Calibration

Author(s): Annamaria Muoio, Angela Garofalo, Francesco La Via
Published in: Micromachines, Issue 17, 2026, ISSN 2072-666X
Publisher: MDPI AG
DOI: 10.3390/MI17070850

Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion Detection

Author(s): Enrico Sangregorio, Alfio Samuele Mancuso, Saverio De Luca, Annamaria Muoio, Lucia Calcagno, Francesco La Via
Published in: Sensors, Issue 26, 2026, ISSN 1424-8220
Publisher: MDPI AG
DOI: 10.3390/S26061809

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

Author(s): Fabrizio Roccaforte, Salvatore Ethan Panasci, Valerio Votadoro, Salvatore Di Franco, Marilena Vivona, Simone Milazzo, Marco Zignale, Filippo Giannazzo, Béla Pécz, Patrick Fiorenza
Published in: Advanced Electronic Materials, 2026, ISSN 2199-160X
Publisher: Wiley
DOI: 10.1002/AELM.70561

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Author(s): B Orfao, M Abou Daher, H Bouillaud, Y Roelens, P Prystawko, R Kucharski, M Bockowski, M Zaknoune
Published in: Journal of Physics D: Applied Physics, Issue 59, 2026, ISSN 0022-3727
Publisher: IOP Publishing
DOI: 10.1088/1361-6463/AE506D

Characterization of the Electric Field in Silicon Carbide Detectors by Optical Beam Induced Current

Author(s): Saverio de Luca, Alfio S. Mancuso, Annamaria Muoio, Enrico Sangregorio, Francesco La Via
Published in: Materials Science Forum, Issue 1191, 2026, ISSN 1662-9752
Publisher: Trans Tech Publications, Ltd.
DOI: 10.4028/P-LYF5SY

Modeling the Changes in the Current--Voltage Characteristics of Vertical GaN-on-GaN p-i-n Diodes Under Electrical Stress

Author(s): Ambra Maria Vianello, Simone Leonardo Longato, Manuel Fregolent, Fabiana Rampazzo, Matteo Buffolo, Dawei Wang, Bingcheng Da, Houqiang Fu, Shisong Luo, Cheng Chang, Yuji Zhao, Isabella Rossetto, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Published in: IEEE Transactions on Electron Devices, Issue 73, 2026, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2026.3678239

Conference proceedings (1)

Two-Dimensional Materials and Wide Bandgap Semiconductors: Integration Challenges and Novel Device Applications (Invited)

Author(s): F. Giannazzo, S. E. Panasci, E. Schilirò, G. Greco, M. Vivona, R. Lo Nigro, P. Fiorenza, F. Roccaforte
Published in: 2026 IEEE International Reliability Physics Symposium (IRPS), 2026
Publisher: IEEE
DOI: 10.1109/IRPS61424.2026.11499179