European pilot line for beyond 2nm leading edge System-on-Chip leadership

Informazioni relative al progetto

NanoIC

ID dell’accordo di sovvenzione: 101183277

DOI

10.3030/101183277

Data della firma CE 10 Dicembre 2024

Data di avvio 1 Gennaio 2024

Data di completamento 31 Dicembre 2028

Finanziato da

• Digital, Industry and Space

Costo totale

€ 551 778 479,00

Contributo UE

€ 448 006 739,89

Coordinato da

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Belgium

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Pubblicazioni

Conference proceedings (43)

Half-Height Double-Row CFET Standard Cells for Area Optimized Placement in A7 CMOS Node

Autori: Kukner, Halil; Lin, Ji-Yung; Yang, Sheng; Verschueren, Lynn; Boemmels, Juergen; Farokhnejad, Anita; Van de Put, Maarten; Zografos, Odysseas; Horiguchi, Naoto; Hellings, Geert; Garcia Bardon, Marie; Ryckaert, Julien
Pubblicato in: 2025 IEEE/ACM International Conference On Computer Aided Design (ICCAD), 2025, ISSN 1558-2434
Editore: IEEE
DOI: 10.5281/ZENODO.18449699

mCFET inner spacer cavity etch: process development and challenges

Autori: Pallavi Puttarame Gowda, Steven Demuynck, Mohamed Saib, Ann Feyen, Ali Abdelgawad, Naveen Reddy, Alina Arslanova, Alexis Franquet, Rita Tilmann, XiuMei Xu, Beatriz Escorcia Ramirez, Camila Toledo de Carvalho Cavalcante, Andy Peng, Dmitry Batuk, Reda Boufa
Pubblicato in: Proc. SPIE 13429, Advanced Etch Technology and Process Integration for Nanopatterning XIV, Numero 134290D , 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3055311

Alternative EUV multilayer mirror mask for reduced mask 3D effects evaluated at NA0.33

Autori: Tatiana Kovalevich, Nick Pellens, Guillaume Libeert, Lieve Van Look, Andreas Frommhold, Vicky Philipsen, Tsukasa Abe, Yukihiro Fujimura, Izumi Hotei, Mei Ebisawa, Masataka Yamaji, Shosuke Tomizuka, Shingo Yoshikawa
Pubblicato in: Proc. SPIE 13687, Photomask Technology 2025, Numero 1368711, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3071379

Performance Improvement in Sub-2nm Node Nanosheet-FETs Through Optimization of Spacer Interface and Dopant Activation

Autori: Pondini, Andrea; Eyben, Pierre; Arimura, Hiroaki; Matagne, Philippe; Chiarella, Thomas; Ganguly, Jishnu; Porret, Clement; Rosseel, Erik; Mertens, Hans; Mitard, Jerome; Verhulst, Anne
Pubblicato in: 2025 IEEE European Solid-State Electronics Research Conference (ESSERC), 2025, ISSN 2643-1319
Editore: IEEE
DOI: 10.1109/ESSERC66193.2025.11213994

Tuning, modelling, and verifying effects of intermixing on EUV multilayer mirror performance via a combined simulation and experimental approach

Autori: Kevin M. Dorney, Eva Nerke, Katrina Rook, Antonio Checco, Vitaly Krasnov, Ankit Nalin Mehta, Andrea Impagnatiello, Ulrich Klostermann, Andy Dawes, Ulrich Welling, Wolfgang Hoppe, Meng Lee, Vicky Philipsen
Pubblicato in: Proc. SPIE 13687, Photomask Technology 2025, Numero 136870Z, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3071890

Novel Low Temperature SiO2 Formation Process by Oxygen and Hydrogen Radicals for Core and I/O RMG Stacks: Achieving the Ultimate NBTI Reliability with a Charge-Free IL

Autori: J. Franco, H. Arimura, J. P. Bastos, V. Afanas’ev, J.-F. de Marneffe, M.-S. Kim, B. Kaczer, N. Horiguchi
Pubblicato in: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Editore: IEEE
DOI: 10.1109/IEDM50572.2025.11353598

Understanding the impact of the EUV photon absorption distribution in a patterned EUV resist and its lithographic performance

Autori: Danilo De Simone, Vicky Philipsen, Alessandro Vaglio Pret, Anatoly Burov
Pubblicato in: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numero 136860D, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3072194

Depth-of-focus enhancement in high-numerical aperture EUV lithography by source and mask optimization

Autori: Guillaume Libeert, Joern-Holger Franke, Sofia Leitao, Natalia Davydova, Praniesh Ayyanar Ramachandran, Susan Sherin Kadeparambil Varghese, Vicky Philipsen
Pubblicato in: Proc. SPIE 13687, Photomask Technology 2025, Numero 136870P, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3072478

Energy-efficient EUV lithography using PFAS-free, light-curable underlayers for advanced nodes

Autori: Seonggil Heo, Jelle Vandereyken, Min Seong Jeong, Elke Caron, Wesley Zanders, Seungjoo Baek, Andreia Santos, Douglas J. Guerrero, Veerle Van Driessche, Masahiko Harumoto
Pubblicato in: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numero 136860P, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3072177

Hybrid Channel monolithic-CFET with Si (110) pMOS and (100) nMOS

Autori: A. Vandooren, S. Iacovo, V. Brissonneau, T. Chiarella, C. Cullen, D. Casey, G. Rengo, R. Khazaka, P. Eyben, V. S. Kumar Channam, J. Ganguly, K. Stiers, C. Sheng, C. Cavalcante, M. Hosseini, D. Batuk, A. Peng, X. Zhou, R. Sarkar, A. Veloso, A. Mingardi, S. K. Sarkar, R. Kumar Saroj, R. Chukka, V. Georgieva, R. Loo, C. Porret, T. Dursap, A. Akula, S. Choudhury, E. Dupuy, A. Peter, N. Jourdan, K. Vandersmissen, D. Montero, E. Vrancken, F. Sebaai, P. Puttarame Gowda, J.-G. Lai, B. T. Chan, A. Sepulveda Marquez, R. Langer, S. Brems, I. Gyo Koo, E. Altamirano Sanchez, K. Devriendt, J. Mitard, L.P.B. Lima, S. Subramanian, N. Horiguchi, S. Demuynck, S. Biesemans
Pubblicato in: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Editore: IEEE
DOI: 10.1109/IEDM50572.2025.11353866

Thermal conductivity of underlayers for EUV lithography and its effect on sensitivity of metal oxide resist

Autori: Roberto Fallica, Danilo De Simone, Patrick E. Hopkins, Andrew Jones, John Gaskins
Pubblicato in: Proc. SPIE 13424, Optical and EUV Nanolithography XXXVIII, Numero 1342416 , 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051713

Patterning optimization for single exposure BLP and SNLP DRAM layers with 0.33NA and 0.55NA EUV lithography

Autori: Van Tuong Pham, Victor Blanco, Jeonghoon Lee, Werner Gillijns, Soobin Hwang, Ardavan Niroomand, Sara Paolillo, Annaelle Demaude, Won Chan Lee, Yannick Feurprier, Kathleen Nafus, Nobuyuki Fukui, Nayoung Bae, Yuhei Kuwahara, Peter De Schepper, Dhruv Tyagi,
Pubblicato in: Proc. SPIE 13428, Advances in Patterning Materials and Processes XLII, Numero 1365507, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051494

e-beam Metrology for High-NA: Revisiting the imec Protocol

Autori: Gian Francesco Lorusso, Alain Moussa, Sahel Habashieh, Dieter Van Den Heuvel, Diziana Vangoidsenhoven, Mihir Gupta, Hyo Seon Suh, Ying-Lin Chen, Danilo De Simone, Chris Mack, Wei Sun, Masaki Sugie, Philippe Foubert, Miki Isawa, Anne-Laure Charley
Pubblicato in: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numero 134260L , 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3052366

BEFORCE: An advanced, versatile platform for unravelling and quantifying EUV photoresist chemistry during exposure, processing, and interaction with the environment

Autori: Ivan Pollentier, Kevin Dorney, Lorenzo Piatti, Fabian Holzmeier, Hyo Seon Suh
Pubblicato in: Proc. SPIE 13428, Advances in Patterning Materials and Processes XLII, Numero 134282G, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051268

3D metrology and inspection to enable the rise of stacked transistors, wafers and chips

Autori: J. Bogdanowicz, A.-L. Charley, P. Leray, R. G. Liu
Pubblicato in: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numero 1342604, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3052399

IGZO Based eDRAM: Bitcell and Array Optimization Enabling Denser Last Level Caches

Autori: Sharma, Arvind Kumar; Oh, Hyungrock; Verschueren, Lynn; Subhechha, Subhali; rassoul, Nouredine; Garcia Bardon, Marie; Belmonte, Attilio; Kar, Gouri Sankar; Hellings, Geert; Biswas, Dwaipayan; Garcia Redondo, Fernando
Pubblicato in: 2025 IEEE European Solid-State Electronics Research Conference (ESSERC), 2025, ISSN 2643-1319
Editore: IEEE
DOI: 10.5281/ZENODO.18392702

Defectivity-aware EUV process window characterization for monolithic complementary FET HAR and 3D patterning

Autori: Hongcheon Yang, Min-Soo Kim, Xiuju Zhou, Christophe Beral, Anne-Laure Charley, Balakumar Baskaran, Kaushik Sah, Loemba Bouckou, Luca Barbisan, Ganesha Durbha, Nikil Paithankar, Zhijin Chen, Roel Gronheid
Pubblicato in: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numero 136860S, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3071887

Optimization toward Non-Zero Offset Stability in Overlay Control: Trends and Prospects

Autori: Nadav Gutman, Bart Baudemprez, Hongcheon Yang, Christophe Beral, Anne-Laure Charley, Loemba Bouckou, Roel Gronheid, Yaniv Weiss, Sofia Napso, Linoy Nagar-shaul, Chufan Zhang, Dana Klein, Yuval Lamhot, Yuval Lubashevsky, Renan Milo, Efi Megged
Pubblicato in: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numero 134260I, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051073

Multi-node scaling potential of monolithic CFET

Autori: Yang, Sheng; Verschueren, Lynn; Boemmels, Juergen; Kukner, Halil; Lin, Ji-Yung; Bufler, Fabian; Sankatali, V.; Farokhnejad, Anita; Van de Put, Maarten; Hellings, Geert
Pubblicato in: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Editore: IEEE
DOI: 10.5281/ZENODO.18451566

Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

Autori: J. Bogdanowicz, A. Mingardi, V. Brissonneau, R. Loo, Y. Shimura, A. Akula, P. P. Gowda, D. Zhou, N. Horiguchi, S. Biesemans, M. Kuhn, S. Murakami, Y. Ito, A. Higuchi, P. Leray, A.-L. Charley
Pubblicato in: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numero 134261G, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3050810

First Demonstration of Field Free Switching Perpendicular SOT-MRAM 4kb Array Using Z-Spin

Autori: Gama Monteiro Junior, Maxwel; Kumar, Ankit; Kateel, Vaishnavi; Vermeulen, Bob; Coester, Birte; Chatterjee, Jyotirmoy; Talmelli, Giacomo; Palomino, Alvaro; Urrestarazu-Larrañaga, Joseba; Van Beek, Simon; Wostyn, Kurt; Rao, Siddharth; NGUYEN, Van Dai; Kar, Gouri Sankar
Pubblicato in: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Editore: IEEE
DOI: 10.5281/ZENODO.18451467

Impact of MOR anomalies on lithography and OPC: challenges and solutions

Autori: Pervaiz Kareem, Werner Gillijns, Kevin Dorney
Pubblicato in: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numero 1368609, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3071885

Hexagonal Contact Holes patterning at 32 nm pitch: influence of the stack and of the etching process on AEI performances

Autori: S. Paolillo, D. Van Den Heuvel, P. Bezard, C. Beral, B. Chowrira, A. Demaude, R. Vallat, L. Souriau, A. Moussa, M. Beggiato, P. Foubert
Pubblicato in: Proc. SPIE 13429, Advanced Etch Technology and Process Integration for Nanopatterning XIV, Numero 13429, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3052173

Energy-efficient optical crosslinking system and PFAS-free underlayers in ArFi lithography: key enablers for sustainable semiconductor technologies and systems

Autori: Min Seong Jeong, Seonggil Heo, Jelle Vandereyken, Elke Caron, Wesley Zanders, Seungjoo Baek, Andreia Santos, Douglas J. Guerrero, and Masahiko Harumoto
Pubblicato in: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numero 1368621, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3073131

High NA EUV defectivity inspection: overview and challenges

Autori: C. Beral, D. Van Den Heuvel, M. Beggiato, B. Chowrira, S. Paolillo, A. Moussa, P. Foubert, D. Cerbu, A. Demaude, P. Leray, A. L. Charley
Pubblicato in: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numero 134261H, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051293

Unraveling the role of environment on the lithographic performance of metal oxide resists: key role of oxygen during post-exposure bake

Autori: Ivan Pollentier, Fabian Holzmeier, Hyo Seon Suh, Kevin Dorney
Pubblicato in: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numero 1368616, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3072102

3.5T CFET Block-Level DTCO for Superior PPA in A7 Node by Split Power, hDR Cells, Optimized Pins and BEOL

Autori: Lin, Ji-Yung; Kukner, Halil; Yang, Sheng; Verschueren, Lien; Boemmels, Juergen; Dell'Atti, Francesco; Farokhnejad, Anita; Van de Put, Maarten; Zografos, Odysseas; Horiguchi, Naoto; Garcia Bardon, Marie; Hellings, Geert; Ryckaert, Julien
Pubblicato in: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Editore: IEEE
DOI: 10.5281/ZENODO.18451341

Moore's Law meets High-NA EUV: Random via patterning for next-generation nodes

Autori: B. Chowrira, V. M. Blanco Carballo, M. Dusa, L. E. Tan, H. Vats, W. Gillijns, S. Decoster, A. Niroomand, V. D. Rutigliani, S. Halder, M. Sangghaleh, D. Tyagi, A. Kamali, M. Newman, M. Demand, Y. Wako, A. Negreira, R. Clark, K. Nafus, M. O'Toole, J. Hsia
Pubblicato in: Proc. SPIE 13424, Optical and EUV Nanolithography XXXVIII, Numero 1342412, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3050453

Dry etch challenges for patterning middle-of-line (MOL) dual damascene contact trench and via in monolithic CFET (complementary FET)

Autori: T. Sarkar, A. Vandooren, K. Stiers, C. Sheng, V. Vega Gonzalez, H. Jenkins, M. Demand, P. Wang, F. Lazzarino, S. Demuynck, N. Horiguchi, S. Biesemans
Pubblicato in: Proc. SPIE 13429, Advanced Etch Technology and Process Integration for Nanopatterning XIV, Numero 134290A, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3052052

Extending the Gate-All-Around (GAA) Era to the A10 Node: Outer Wall Forksheet Enabling Full Channel Strain and Superior Gate Control

Autori: Lynn Verschueren; Geert Eneman; Sheng Yang; Jürgen Bömmels; Philippe Matagne; Katty Beltrán Cahueñas, Arvind Sharma, Dawit Abdi, Hans Mertens, Gioele Mirabelli, Geert Hellings
Pubblicato in: 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025, ISSN 2158-9682
Editore: IEEE
DOI: 10.23919/VLSITECHNOLOGYANDCIR65189.2025.11075021

Stitching at high-NA EUV: a first experimental study

Autori: Vincent Wiaux, Natalia Davydova, Nick Pellens, Ataklti Weldeslassie, Jad Haddad, Tatiana Kovalevich, Vito Daniele Rutigliani, Marcus Newman, Mahtab Sangghaleh, Dhruv Tyagi, Airat Galiullin, Jeremy Chen, Adam Lyons, Frank Timmermans, Cyrus Tabery
Pubblicato in: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numero 1368606, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3073385

Via to line-end contact failures: the role of stochastics

Autori: Balakumar Baskaran, Dorin Cerbu, Matteo Beggiato, Victor Blanco, Gian Lorusso, Danilo De Simone, Michael E. Adel, Chris A. Mack
Pubblicato in: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numero 134260N, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3050970

Stochastic-Aware Compact OPC Model Validation for Reducing Failure Probability

Autori: Renyang Meng, Xuelong Shi, Joost Bekaert, Werner Gillijns, Ryoung-han Kim
Pubblicato in: Proc. SPIE 13655, Photomask Japan 2025: XXXI Symposium on Photomask and Next-Generation Lithography Mask Technology, Numero 134280T, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3072074

Critical in-line OCD metrology for CFET manufacturing

Autori: Hyukyun Kwon, Joey Hung, Adam M. Urbanowicz, Ronen Urenski, Igor Turovets, Avron Ger, Szu-Wei Tseng, Mohamed Saib, Janusz Bogdanowicz, Stephanie Melhem, Daisy Zhou, Yong Kong Siew, Debashish Basu, Anne-Laure Charley, Jason Reifsnider, Naoto Horiguchi, Philippe Leray
Pubblicato in: Metrology, Inspection, and Process Control XXXIX, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051718

Characterization of FOWLP Process Using Temporary Bonding Materials on Carrier with Very Low Die Shift

Autori: Tang, Tiffany; Guerrero, Alice; Cuypers, Dieter H.; Macours, Maarten; VAQUILAR, ALDRIN; Bex, Pieter; Kennes, Koen; Phommahaxay, Alain; Beyer, Gerald; Beyne, Eric
Pubblicato in: 2025 IEEE 75th Electronic Components and Technology Conference (ECTC), 2025, ISSN 2377-5726
Editore: IEEE
DOI: 10.5281/ZENODO.18394580

Atomic Force Microscopy: From research lab to High-Volume Manufacturing

Autori: A. Moussa, A.-L. Charley, P. Leray
Pubblicato in: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numero 134260X, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051414

First Systematic Characterization of Floating Body Effects in GAA Nanosheet 3D DRAM Access Transistors

Autori: Garbin, Daniele; Eneman, Geert; Ritzenthaler, Romain; Rassoul, Nouredine; Eyben, Pierre; Canga, Eren; Matsubayashi, Daisuke; Fantini, Andrea; O'Sullivan, Barry; Labbate, L.A.; Loyo Prado, Jana; Loo, Roger; Devulder, Wouter; Dupuy, Emmanuel; Peissker, Tobias; Pacco, Antoine; RAUT, HEMANT; Milenin, Alexey; Wouters, Lennaert; Vrancken, Evi; Beggiato, Matteo; Rosseel, Erik; Kar, Gouri Sankar; Belmonte, Attilio
Pubblicato in: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Editore: IEEE
DOI: 10.5281/ZENODO.18449577

Fundamental Understanding of Exposure and Process Chemistry for Enhanced Lithography and Stability of Metal Oxide Resists

Autori: Dorney, Kevin M.; Pollentier, Ivan; Holzmeier, Fabian; Fallica, Roberto; Chen, Ying-Lin; Piatti, Lorenzo; Singh, Dhirendra; Galleni, Laura; Van Setten, Michiel J.; Suh, Hyo Seon; De Simone, Danilo; Pourtois, Geoffrey; Van der Heide, Paul; Petersen, John
Pubblicato in: Proc. SPIE 13428, Advances in Patterning Materials and Processes XLII, Numero 134281C, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051260

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

Autori: Vishwakarma, Kavita; Lee, Kookjin; Kruv, Anastasiia; Chasin, Adrian; van Setten, Michiel J.; Pashartis, Christopher; Orkut Okudur, Oguzhan; Gonzalez, Mario; Rassoul, Nouredine; Belmonte, Attilio; Kaczer, Ben
Pubblicato in: 2025 IEEE International Reliability Physics Symposium (IRPS), 2025, ISSN 1938-1891
Editore: IEEE
DOI: 10.48550/ARXIV.2506.15193

Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe: B Source/Drain

Autori: R. Sarkar, D. Casey, A. Dutta, P. Eyben, A. Pondini, H. Mertens, T. Dursap, C. Porret, A. Veloso, J. Ganguly, R. Duflou, C. Cullen, P.A. Rathi, M-S. Kim, R. Khazaka, J. Mitard, L. P. B. Lima, S. Biesemans, N. Horiguchi
Pubblicato in: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Editore: IEEE
DOI: 10.1109/IEDM50572.2025.11353791

Using Programmed defect vehicle to understand printability of defect/2D structures and characterize it through EUV process impact

Autori: Bojja Aditya Reddy, Balakumar Baskaran, Mohamed Saib, Joern-Holger Franke, Christophe Beral, Murat Pak, Sandip Halder, Mircea Dusa
Pubblicato in: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numero 134261X, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3052510

Shifter Materials and Stack Explorations for $V_{t}$ Fine-Tunable Dual Dipole Multi-$V_{t}$ Gate Stacks Compatible with Low Thermal Budget CFET

Autori: Arimura, Hiroaki; Lukose, Leo; Ganguly, Jishnu; Franco, Jacopo; Mertens, Hans; Stiers, Jimmy; Lai, J. G.; Nalin Mehta, Ankit; Bejide, M.; Kim, Min-Soo; Horiguchi, Naoto
Pubblicato in: 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025, ISSN 2158-9682
Editore: IEEE
DOI: 10.5281/ZENODO.18448440

Resolution improvement and dose reduction in logic and memory applications from low NA to high NA

Autori: Shubhankar Das, Victor Blanco, Van Tuong Pham, Shruti Jambaldinni, Anuja De Silva, Joern-Holger Franke, Marcus Newman, Ali Haider, Matt Gallagher, Jeonghoon Lee, Kaushik Sah, Zhijin Chen, Bobo Cheng, Chenwei Gong, Vidya Ramanathan, Andrew Cross, Werner Gi
Pubblicato in: Proc. SPIE 13424, Optical and EUV Nanolithography XXXVIII, Numero 1342413, 2025, ISSN 1996-756X
Editore: SPIE
DOI: 10.1117/12.3051512

Peer reviewed articles (16)

Carrier Mapping in Sub‐2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy

Autori: Andrea Pondini, Pierre Eyben, Lennaert Wouters, Albert Minj, Thomas Hantschel, Philippe Matagne, Jérôme Mitard, Anne Verhulst
Pubblicato in: Small Methods, 2026, ISSN 1520-8559
Editore: Wiley
DOI: 10.1002/SMTD.202502279

2 μm Pitch Direct Die-to-Wafer Hybrid Bonding Using Surface Protection During Wafer Thinning and Die Singulation

Autori: Lin, Ye; Bex, Pieter; Suhard, Samuel; Zhang, Boyao; Ulu Okudur, Fulya; Diaz De Zerio, Amaia; Reddy, Naveen K; Altamirano-Sanchez, Efrain; Li, Yanan; Jourdain, Anne; Beyer, Gerald; Beyne, Eric
Pubblicato in: 2025 IEEE 75th Electronic Components and Technology Conference (ECTC), 2025, ISSN 2377-5726
Editore: IEEE
DOI: 10.5281/ZENODO.18403972

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS ₂

Autori: Nazar Farid, Aashi Gupta, Pavlina Metaxa, A Arifutzzaman, Hariprasad Kuduvan, Rahil Haria, Michele Conroy, Ian Campbell, Ageeth A Bol, James Connolly, Jun Lin, Ian Povey, Ray Duffy, Gerard M O'Connor
Pubblicato in: Small, 2026, ISSN 1613-6810
Editore: Wiley
DOI: 10.1002/SMLL.202510617

Journal of Materials Science: Materials in Electronics

Autori: Dekkers, Hendrik; Dialameh, Masoud; Agati, Marta; van Setten, Michiel J.; Belmonte, Attilio
Pubblicato in: Journal of Materials Science: Materials in Electronics, 2025, ISSN 0957-4522
Editore: Springer Nature
DOI: 10.5281/ZENODO.18428147

Smart Diagnostics for 3D CFET: A Machine Learning Approach to Failure Analysis

Autori: Mitard, Jerome; Koçak, Hüsnü Murat; Chiarella, Thomas; Sheng, Cassie (Jiazhen); Demuyck, Steven; Horiguchi, Naoto
Pubblicato in: 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS), 2025, ISSN 2158-1029
Editore: IEEE
DOI: 10.5281/ZENODO.18405295

Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT

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DOI: 10.5281/ZENODO.18401224

Deposition of spinel IGZO thin films with increased indium contents on textured GZO templates

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Active Sampling of Electrical Characterization Parameters for Efficient Measurement

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