European pilot line for beyond 2nm leading edge System-on-Chip leadership

Informacje na temat projektu

NanoIC

Identyfikator umowy o grant: 101183277

DOI

10.3030/101183277

Data podpisania przez KE 10 Grudnia 2024

Data rozpoczęcia 1 Stycznia 2024

Data zakończenia 31 Grudnia 2028

Finansowanie w ramach

• Digital, Industry and Space

Koszt całkowity

€ 551 778 479,00

Wkład UE

€ 448 006 739,89

Koordynowany przez

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Belgium

CORDIS oferuje możliwość skorzystania z odnośników do publicznie dostępnych publikacji i rezultatów projektów realizowanych w ramach programów ramowych HORYZONT.

Odnośniki do rezultatów i publikacji związanych z poszczególnymi projektami 7PR, a także odnośniki do niektórych konkretnych kategorii wyników, takich jak zbiory danych i oprogramowanie, są dynamicznie pobierane z systemu OpenAIRE .

Publikacje

Conference proceedings (43)

Half-Height Double-Row CFET Standard Cells for Area Optimized Placement in A7 CMOS Node

Autorzy: Kukner, Halil; Lin, Ji-Yung; Yang, Sheng; Verschueren, Lynn; Boemmels, Juergen; Farokhnejad, Anita; Van de Put, Maarten; Zografos, Odysseas; Horiguchi, Naoto; Hellings, Geert; Garcia Bardon, Marie; Ryckaert, Julien
Opublikowane w: 2025 IEEE/ACM International Conference On Computer Aided Design (ICCAD), 2025, ISSN 1558-2434
Wydawca: IEEE
DOI: 10.5281/ZENODO.18449699

mCFET inner spacer cavity etch: process development and challenges

Autorzy: Pallavi Puttarame Gowda, Steven Demuynck, Mohamed Saib, Ann Feyen, Ali Abdelgawad, Naveen Reddy, Alina Arslanova, Alexis Franquet, Rita Tilmann, XiuMei Xu, Beatriz Escorcia Ramirez, Camila Toledo de Carvalho Cavalcante, Andy Peng, Dmitry Batuk, Reda Boufa
Opublikowane w: Proc. SPIE 13429, Advanced Etch Technology and Process Integration for Nanopatterning XIV, Numer 134290D , 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3055311

Alternative EUV multilayer mirror mask for reduced mask 3D effects evaluated at NA0.33

Autorzy: Tatiana Kovalevich, Nick Pellens, Guillaume Libeert, Lieve Van Look, Andreas Frommhold, Vicky Philipsen, Tsukasa Abe, Yukihiro Fujimura, Izumi Hotei, Mei Ebisawa, Masataka Yamaji, Shosuke Tomizuka, Shingo Yoshikawa
Opublikowane w: Proc. SPIE 13687, Photomask Technology 2025, Numer 1368711, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3071379

Performance Improvement in Sub-2nm Node Nanosheet-FETs Through Optimization of Spacer Interface and Dopant Activation

Autorzy: Pondini, Andrea; Eyben, Pierre; Arimura, Hiroaki; Matagne, Philippe; Chiarella, Thomas; Ganguly, Jishnu; Porret, Clement; Rosseel, Erik; Mertens, Hans; Mitard, Jerome; Verhulst, Anne
Opublikowane w: 2025 IEEE European Solid-State Electronics Research Conference (ESSERC), 2025, ISSN 2643-1319
Wydawca: IEEE
DOI: 10.1109/ESSERC66193.2025.11213994

Tuning, modelling, and verifying effects of intermixing on EUV multilayer mirror performance via a combined simulation and experimental approach

Autorzy: Kevin M. Dorney, Eva Nerke, Katrina Rook, Antonio Checco, Vitaly Krasnov, Ankit Nalin Mehta, Andrea Impagnatiello, Ulrich Klostermann, Andy Dawes, Ulrich Welling, Wolfgang Hoppe, Meng Lee, Vicky Philipsen
Opublikowane w: Proc. SPIE 13687, Photomask Technology 2025, Numer 136870Z, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3071890

Novel Low Temperature SiO2 Formation Process by Oxygen and Hydrogen Radicals for Core and I/O RMG Stacks: Achieving the Ultimate NBTI Reliability with a Charge-Free IL

Autorzy: J. Franco, H. Arimura, J. P. Bastos, V. Afanas’ev, J.-F. de Marneffe, M.-S. Kim, B. Kaczer, N. Horiguchi
Opublikowane w: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Wydawca: IEEE
DOI: 10.1109/IEDM50572.2025.11353598

Understanding the impact of the EUV photon absorption distribution in a patterned EUV resist and its lithographic performance

Autorzy: Danilo De Simone, Vicky Philipsen, Alessandro Vaglio Pret, Anatoly Burov
Opublikowane w: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numer 136860D, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3072194

Depth-of-focus enhancement in high-numerical aperture EUV lithography by source and mask optimization

Autorzy: Guillaume Libeert, Joern-Holger Franke, Sofia Leitao, Natalia Davydova, Praniesh Ayyanar Ramachandran, Susan Sherin Kadeparambil Varghese, Vicky Philipsen
Opublikowane w: Proc. SPIE 13687, Photomask Technology 2025, Numer 136870P, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3072478

Energy-efficient EUV lithography using PFAS-free, light-curable underlayers for advanced nodes

Autorzy: Seonggil Heo, Jelle Vandereyken, Min Seong Jeong, Elke Caron, Wesley Zanders, Seungjoo Baek, Andreia Santos, Douglas J. Guerrero, Veerle Van Driessche, Masahiko Harumoto
Opublikowane w: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numer 136860P, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3072177

Hybrid Channel monolithic-CFET with Si (110) pMOS and (100) nMOS

Autorzy: A. Vandooren, S. Iacovo, V. Brissonneau, T. Chiarella, C. Cullen, D. Casey, G. Rengo, R. Khazaka, P. Eyben, V. S. Kumar Channam, J. Ganguly, K. Stiers, C. Sheng, C. Cavalcante, M. Hosseini, D. Batuk, A. Peng, X. Zhou, R. Sarkar, A. Veloso, A. Mingardi, S. K. Sarkar, R. Kumar Saroj, R. Chukka, V. Georgieva, R. Loo, C. Porret, T. Dursap, A. Akula, S. Choudhury, E. Dupuy, A. Peter, N. Jourdan, K. Vandersmissen, D. Montero, E. Vrancken, F. Sebaai, P. Puttarame Gowda, J.-G. Lai, B. T. Chan, A. Sepulveda Marquez, R. Langer, S. Brems, I. Gyo Koo, E. Altamirano Sanchez, K. Devriendt, J. Mitard, L.P.B. Lima, S. Subramanian, N. Horiguchi, S. Demuynck, S. Biesemans
Opublikowane w: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Wydawca: IEEE
DOI: 10.1109/IEDM50572.2025.11353866

Thermal conductivity of underlayers for EUV lithography and its effect on sensitivity of metal oxide resist

Autorzy: Roberto Fallica, Danilo De Simone, Patrick E. Hopkins, Andrew Jones, John Gaskins
Opublikowane w: Proc. SPIE 13424, Optical and EUV Nanolithography XXXVIII, Numer 1342416 , 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051713

Patterning optimization for single exposure BLP and SNLP DRAM layers with 0.33NA and 0.55NA EUV lithography

Autorzy: Van Tuong Pham, Victor Blanco, Jeonghoon Lee, Werner Gillijns, Soobin Hwang, Ardavan Niroomand, Sara Paolillo, Annaelle Demaude, Won Chan Lee, Yannick Feurprier, Kathleen Nafus, Nobuyuki Fukui, Nayoung Bae, Yuhei Kuwahara, Peter De Schepper, Dhruv Tyagi,
Opublikowane w: Proc. SPIE 13428, Advances in Patterning Materials and Processes XLII, Numer 1365507, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051494

e-beam Metrology for High-NA: Revisiting the imec Protocol

Autorzy: Gian Francesco Lorusso, Alain Moussa, Sahel Habashieh, Dieter Van Den Heuvel, Diziana Vangoidsenhoven, Mihir Gupta, Hyo Seon Suh, Ying-Lin Chen, Danilo De Simone, Chris Mack, Wei Sun, Masaki Sugie, Philippe Foubert, Miki Isawa, Anne-Laure Charley
Opublikowane w: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numer 134260L , 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3052366

BEFORCE: An advanced, versatile platform for unravelling and quantifying EUV photoresist chemistry during exposure, processing, and interaction with the environment

Autorzy: Ivan Pollentier, Kevin Dorney, Lorenzo Piatti, Fabian Holzmeier, Hyo Seon Suh
Opublikowane w: Proc. SPIE 13428, Advances in Patterning Materials and Processes XLII, Numer 134282G, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051268

3D metrology and inspection to enable the rise of stacked transistors, wafers and chips

Autorzy: J. Bogdanowicz, A.-L. Charley, P. Leray, R. G. Liu
Opublikowane w: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numer 1342604, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3052399

IGZO Based eDRAM: Bitcell and Array Optimization Enabling Denser Last Level Caches

Autorzy: Sharma, Arvind Kumar; Oh, Hyungrock; Verschueren, Lynn; Subhechha, Subhali; rassoul, Nouredine; Garcia Bardon, Marie; Belmonte, Attilio; Kar, Gouri Sankar; Hellings, Geert; Biswas, Dwaipayan; Garcia Redondo, Fernando
Opublikowane w: 2025 IEEE European Solid-State Electronics Research Conference (ESSERC), 2025, ISSN 2643-1319
Wydawca: IEEE
DOI: 10.5281/ZENODO.18392702

Defectivity-aware EUV process window characterization for monolithic complementary FET HAR and 3D patterning

Autorzy: Hongcheon Yang, Min-Soo Kim, Xiuju Zhou, Christophe Beral, Anne-Laure Charley, Balakumar Baskaran, Kaushik Sah, Loemba Bouckou, Luca Barbisan, Ganesha Durbha, Nikil Paithankar, Zhijin Chen, Roel Gronheid
Opublikowane w: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numer 136860S, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3071887

Optimization toward Non-Zero Offset Stability in Overlay Control: Trends and Prospects

Autorzy: Nadav Gutman, Bart Baudemprez, Hongcheon Yang, Christophe Beral, Anne-Laure Charley, Loemba Bouckou, Roel Gronheid, Yaniv Weiss, Sofia Napso, Linoy Nagar-shaul, Chufan Zhang, Dana Klein, Yuval Lamhot, Yuval Lubashevsky, Renan Milo, Efi Megged
Opublikowane w: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numer 134260I, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051073

Multi-node scaling potential of monolithic CFET

Autorzy: Yang, Sheng; Verschueren, Lynn; Boemmels, Juergen; Kukner, Halil; Lin, Ji-Yung; Bufler, Fabian; Sankatali, V.; Farokhnejad, Anita; Van de Put, Maarten; Hellings, Geert
Opublikowane w: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Wydawca: IEEE
DOI: 10.5281/ZENODO.18451566

Inline X-ray metrology for Complementary Field-Effect Transistors (CFET)

Autorzy: J. Bogdanowicz, A. Mingardi, V. Brissonneau, R. Loo, Y. Shimura, A. Akula, P. P. Gowda, D. Zhou, N. Horiguchi, S. Biesemans, M. Kuhn, S. Murakami, Y. Ito, A. Higuchi, P. Leray, A.-L. Charley
Opublikowane w: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numer 134261G, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3050810

First Demonstration of Field Free Switching Perpendicular SOT-MRAM 4kb Array Using Z-Spin

Autorzy: Gama Monteiro Junior, Maxwel; Kumar, Ankit; Kateel, Vaishnavi; Vermeulen, Bob; Coester, Birte; Chatterjee, Jyotirmoy; Talmelli, Giacomo; Palomino, Alvaro; Urrestarazu-Larrañaga, Joseba; Van Beek, Simon; Wostyn, Kurt; Rao, Siddharth; NGUYEN, Van Dai; Kar, Gouri Sankar
Opublikowane w: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Wydawca: IEEE
DOI: 10.5281/ZENODO.18451467

Impact of MOR anomalies on lithography and OPC: challenges and solutions

Autorzy: Pervaiz Kareem, Werner Gillijns, Kevin Dorney
Opublikowane w: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numer 1368609, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3071885

Hexagonal Contact Holes patterning at 32 nm pitch: influence of the stack and of the etching process on AEI performances

Autorzy: S. Paolillo, D. Van Den Heuvel, P. Bezard, C. Beral, B. Chowrira, A. Demaude, R. Vallat, L. Souriau, A. Moussa, M. Beggiato, P. Foubert
Opublikowane w: Proc. SPIE 13429, Advanced Etch Technology and Process Integration for Nanopatterning XIV, Numer 13429, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3052173

Energy-efficient optical crosslinking system and PFAS-free underlayers in ArFi lithography: key enablers for sustainable semiconductor technologies and systems

Autorzy: Min Seong Jeong, Seonggil Heo, Jelle Vandereyken, Elke Caron, Wesley Zanders, Seungjoo Baek, Andreia Santos, Douglas J. Guerrero, and Masahiko Harumoto
Opublikowane w: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numer 1368621, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3073131

High NA EUV defectivity inspection: overview and challenges

Autorzy: C. Beral, D. Van Den Heuvel, M. Beggiato, B. Chowrira, S. Paolillo, A. Moussa, P. Foubert, D. Cerbu, A. Demaude, P. Leray, A. L. Charley
Opublikowane w: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numer 134261H, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051293

Unraveling the role of environment on the lithographic performance of metal oxide resists: key role of oxygen during post-exposure bake

Autorzy: Ivan Pollentier, Fabian Holzmeier, Hyo Seon Suh, Kevin Dorney
Opublikowane w: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numer 1368616, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3072102

3.5T CFET Block-Level DTCO for Superior PPA in A7 Node by Split Power, hDR Cells, Optimized Pins and BEOL

Autorzy: Lin, Ji-Yung; Kukner, Halil; Yang, Sheng; Verschueren, Lien; Boemmels, Juergen; Dell'Atti, Francesco; Farokhnejad, Anita; Van de Put, Maarten; Zografos, Odysseas; Horiguchi, Naoto; Garcia Bardon, Marie; Hellings, Geert; Ryckaert, Julien
Opublikowane w: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Wydawca: IEEE
DOI: 10.5281/ZENODO.18451341

Moore's Law meets High-NA EUV: Random via patterning for next-generation nodes

Autorzy: B. Chowrira, V. M. Blanco Carballo, M. Dusa, L. E. Tan, H. Vats, W. Gillijns, S. Decoster, A. Niroomand, V. D. Rutigliani, S. Halder, M. Sangghaleh, D. Tyagi, A. Kamali, M. Newman, M. Demand, Y. Wako, A. Negreira, R. Clark, K. Nafus, M. O'Toole, J. Hsia
Opublikowane w: Proc. SPIE 13424, Optical and EUV Nanolithography XXXVIII, Numer 1342412, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3050453

Dry etch challenges for patterning middle-of-line (MOL) dual damascene contact trench and via in monolithic CFET (complementary FET)

Autorzy: T. Sarkar, A. Vandooren, K. Stiers, C. Sheng, V. Vega Gonzalez, H. Jenkins, M. Demand, P. Wang, F. Lazzarino, S. Demuynck, N. Horiguchi, S. Biesemans
Opublikowane w: Proc. SPIE 13429, Advanced Etch Technology and Process Integration for Nanopatterning XIV, Numer 134290A, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3052052

Extending the Gate-All-Around (GAA) Era to the A10 Node: Outer Wall Forksheet Enabling Full Channel Strain and Superior Gate Control

Autorzy: Lynn Verschueren; Geert Eneman; Sheng Yang; Jürgen Bömmels; Philippe Matagne; Katty Beltrán Cahueñas, Arvind Sharma, Dawit Abdi, Hans Mertens, Gioele Mirabelli, Geert Hellings
Opublikowane w: 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025, ISSN 2158-9682
Wydawca: IEEE
DOI: 10.23919/VLSITECHNOLOGYANDCIR65189.2025.11075021

Stitching at high-NA EUV: a first experimental study

Autorzy: Vincent Wiaux, Natalia Davydova, Nick Pellens, Ataklti Weldeslassie, Jad Haddad, Tatiana Kovalevich, Vito Daniele Rutigliani, Marcus Newman, Mahtab Sangghaleh, Dhruv Tyagi, Airat Galiullin, Jeremy Chen, Adam Lyons, Frank Timmermans, Cyrus Tabery
Opublikowane w: Proc. SPIE 13686, International Conference on Extreme Ultraviolet Lithography 2025, Numer 1368606, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3073385

Via to line-end contact failures: the role of stochastics

Autorzy: Balakumar Baskaran, Dorin Cerbu, Matteo Beggiato, Victor Blanco, Gian Lorusso, Danilo De Simone, Michael E. Adel, Chris A. Mack
Opublikowane w: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numer 134260N, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3050970

Stochastic-Aware Compact OPC Model Validation for Reducing Failure Probability

Autorzy: Renyang Meng, Xuelong Shi, Joost Bekaert, Werner Gillijns, Ryoung-han Kim
Opublikowane w: Proc. SPIE 13655, Photomask Japan 2025: XXXI Symposium on Photomask and Next-Generation Lithography Mask Technology, Numer 134280T, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3072074

Critical in-line OCD metrology for CFET manufacturing

Autorzy: Hyukyun Kwon, Joey Hung, Adam M. Urbanowicz, Ronen Urenski, Igor Turovets, Avron Ger, Szu-Wei Tseng, Mohamed Saib, Janusz Bogdanowicz, Stephanie Melhem, Daisy Zhou, Yong Kong Siew, Debashish Basu, Anne-Laure Charley, Jason Reifsnider, Naoto Horiguchi, Philippe Leray
Opublikowane w: Metrology, Inspection, and Process Control XXXIX, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051718

Characterization of FOWLP Process Using Temporary Bonding Materials on Carrier with Very Low Die Shift

Autorzy: Tang, Tiffany; Guerrero, Alice; Cuypers, Dieter H.; Macours, Maarten; VAQUILAR, ALDRIN; Bex, Pieter; Kennes, Koen; Phommahaxay, Alain; Beyer, Gerald; Beyne, Eric
Opublikowane w: 2025 IEEE 75th Electronic Components and Technology Conference (ECTC), 2025, ISSN 2377-5726
Wydawca: IEEE
DOI: 10.5281/ZENODO.18394580

Atomic Force Microscopy: From research lab to High-Volume Manufacturing

Autorzy: A. Moussa, A.-L. Charley, P. Leray
Opublikowane w: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numer 134260X, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051414

First Systematic Characterization of Floating Body Effects in GAA Nanosheet 3D DRAM Access Transistors

Autorzy: Garbin, Daniele; Eneman, Geert; Ritzenthaler, Romain; Rassoul, Nouredine; Eyben, Pierre; Canga, Eren; Matsubayashi, Daisuke; Fantini, Andrea; O'Sullivan, Barry; Labbate, L.A.; Loyo Prado, Jana; Loo, Roger; Devulder, Wouter; Dupuy, Emmanuel; Peissker, Tobias; Pacco, Antoine; RAUT, HEMANT; Milenin, Alexey; Wouters, Lennaert; Vrancken, Evi; Beggiato, Matteo; Rosseel, Erik; Kar, Gouri Sankar; Belmonte, Attilio
Opublikowane w: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Wydawca: IEEE
DOI: 10.5281/ZENODO.18449577

Fundamental Understanding of Exposure and Process Chemistry for Enhanced Lithography and Stability of Metal Oxide Resists

Autorzy: Dorney, Kevin M.; Pollentier, Ivan; Holzmeier, Fabian; Fallica, Roberto; Chen, Ying-Lin; Piatti, Lorenzo; Singh, Dhirendra; Galleni, Laura; Van Setten, Michiel J.; Suh, Hyo Seon; De Simone, Danilo; Pourtois, Geoffrey; Van der Heide, Paul; Petersen, John
Opublikowane w: Proc. SPIE 13428, Advances in Patterning Materials and Processes XLII, Numer 134281C, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051260

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

Autorzy: Vishwakarma, Kavita; Lee, Kookjin; Kruv, Anastasiia; Chasin, Adrian; van Setten, Michiel J.; Pashartis, Christopher; Orkut Okudur, Oguzhan; Gonzalez, Mario; Rassoul, Nouredine; Belmonte, Attilio; Kaczer, Ben
Opublikowane w: 2025 IEEE International Reliability Physics Symposium (IRPS), 2025, ISSN 1938-1891
Wydawca: IEEE
DOI: 10.48550/ARXIV.2506.15193

Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe: B Source/Drain

Autorzy: R. Sarkar, D. Casey, A. Dutta, P. Eyben, A. Pondini, H. Mertens, T. Dursap, C. Porret, A. Veloso, J. Ganguly, R. Duflou, C. Cullen, P.A. Rathi, M-S. Kim, R. Khazaka, J. Mitard, L. P. B. Lima, S. Biesemans, N. Horiguchi
Opublikowane w: 2025 IEEE International Electron Devices Meeting (IEDM), 2026, ISSN 2156-017X
Wydawca: IEEE
DOI: 10.1109/IEDM50572.2025.11353791

Using Programmed defect vehicle to understand printability of defect/2D structures and characterize it through EUV process impact

Autorzy: Bojja Aditya Reddy, Balakumar Baskaran, Mohamed Saib, Joern-Holger Franke, Christophe Beral, Murat Pak, Sandip Halder, Mircea Dusa
Opublikowane w: Proc. SPIE 13426, Metrology, Inspection, and Process Control XXXIX, Numer 134261X, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3052510

Shifter Materials and Stack Explorations for $V_{t}$ Fine-Tunable Dual Dipole Multi-$V_{t}$ Gate Stacks Compatible with Low Thermal Budget CFET

Autorzy: Arimura, Hiroaki; Lukose, Leo; Ganguly, Jishnu; Franco, Jacopo; Mertens, Hans; Stiers, Jimmy; Lai, J. G.; Nalin Mehta, Ankit; Bejide, M.; Kim, Min-Soo; Horiguchi, Naoto
Opublikowane w: 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2025, ISSN 2158-9682
Wydawca: IEEE
DOI: 10.5281/ZENODO.18448440

Resolution improvement and dose reduction in logic and memory applications from low NA to high NA

Autorzy: Shubhankar Das, Victor Blanco, Van Tuong Pham, Shruti Jambaldinni, Anuja De Silva, Joern-Holger Franke, Marcus Newman, Ali Haider, Matt Gallagher, Jeonghoon Lee, Kaushik Sah, Zhijin Chen, Bobo Cheng, Chenwei Gong, Vidya Ramanathan, Andrew Cross, Werner Gi
Opublikowane w: Proc. SPIE 13424, Optical and EUV Nanolithography XXXVIII, Numer 1342413, 2025, ISSN 1996-756X
Wydawca: SPIE
DOI: 10.1117/12.3051512

Peer reviewed articles (16)

Carrier Mapping in Sub‐2nm Node Nanosheet Transistors with Scanning Spreading Resistance Microscopy

Autorzy: Andrea Pondini, Pierre Eyben, Lennaert Wouters, Albert Minj, Thomas Hantschel, Philippe Matagne, Jérôme Mitard, Anne Verhulst
Opublikowane w: Small Methods, 2026, ISSN 1520-8559
Wydawca: Wiley
DOI: 10.1002/SMTD.202502279

2 μm Pitch Direct Die-to-Wafer Hybrid Bonding Using Surface Protection During Wafer Thinning and Die Singulation

Autorzy: Lin, Ye; Bex, Pieter; Suhard, Samuel; Zhang, Boyao; Ulu Okudur, Fulya; Diaz De Zerio, Amaia; Reddy, Naveen K; Altamirano-Sanchez, Efrain; Li, Yanan; Jourdain, Anne; Beyer, Gerald; Beyne, Eric
Opublikowane w: 2025 IEEE 75th Electronic Components and Technology Conference (ECTC), 2025, ISSN 2377-5726
Wydawca: IEEE
DOI: 10.5281/ZENODO.18403972

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS ₂

Autorzy: Nazar Farid, Aashi Gupta, Pavlina Metaxa, A Arifutzzaman, Hariprasad Kuduvan, Rahil Haria, Michele Conroy, Ian Campbell, Ageeth A Bol, James Connolly, Jun Lin, Ian Povey, Ray Duffy, Gerard M O'Connor
Opublikowane w: Small, 2026, ISSN 1613-6810
Wydawca: Wiley
DOI: 10.1002/SMLL.202510617

Journal of Materials Science: Materials in Electronics

Autorzy: Dekkers, Hendrik; Dialameh, Masoud; Agati, Marta; van Setten, Michiel J.; Belmonte, Attilio
Opublikowane w: Journal of Materials Science: Materials in Electronics, 2025, ISSN 0957-4522
Wydawca: Springer Nature
DOI: 10.5281/ZENODO.18428147

Smart Diagnostics for 3D CFET: A Machine Learning Approach to Failure Analysis

Autorzy: Mitard, Jerome; Koçak, Hüsnü Murat; Chiarella, Thomas; Sheng, Cassie (Jiazhen); Demuyck, Steven; Horiguchi, Naoto
Opublikowane w: 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS), 2025, ISSN 2158-1029
Wydawca: IEEE
DOI: 10.5281/ZENODO.18405295

Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT

Autorzy: Van Beek, Simon; Chasin, Adrian; Subhechha, Subhali; Dekkers, Hendrik; Rassoul, Nouredine; Wan, Yiqun; Tang, Hongwei; Bastos, Joao; Belmonte, Attilio; Kar, Gouri Sankar
Opublikowane w: 2025 IEEE International Reliability Physics Symposium (IRPS), 2025, ISSN 1938-1891
Wydawca: IEEE
DOI: 10.5281/ZENODO.18401224

Deposition of spinel IGZO thin films with increased indium contents on textured GZO templates

Autorzy: Evangelos Agiannis, Hendrik F. W. Dekkers, Marta Agati, Annelies Delabie
Opublikowane w: Journal of Applied Physics, Numer 138, 2025, ISSN 1089-7550
Wydawca: AIP Publishing
DOI: 10.1063/5.0276210

IEEE Electron Device Letters

Autorzy: Tang, HW; Lin, D; Subhechha, S; Chasin, A; Matsubayashi, D; van Setten, M; Wan, YQ; Dekkers, H; Li, J; Subramanian, S; Chen, Z; Rassoul, N; Jiang, YC; Van Houdt, J; Afanas'ev, V; Kar, GS; Belmonte, A
Opublikowane w: IEEE Electron Device Letters, 2025, ISSN 0741-3106
Wydawca: IEEE
DOI: 10.1109/LED.2025.3549865

Active Sampling of Electrical Characterization Parameters for Efficient Measurement

Autorzy: Koçak, Hüsnü Murat; Mitard, Jerome; Naskali, Ahmet Teoman; Davis, Jesse
Opublikowane w: 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS), 2025, ISSN 1071-9032
Wydawca: IEEE
DOI: 10.5281/ZENODO.18400848

Disrupting the DRAM roadmap with capacitor-less IGZO-DRAM technology

Autorzy: Attilio Belmonte; Gouri Sankar Kar
Opublikowane w: Nature Reviews Electrical Engineering, 2025, ISSN 2948-1201
Wydawca: Nature
DOI: 10.1038/S44287-025-00162-W

Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures

Autorzy: Tang, Hongwei; Belmonte, Attilio; Lin, Dennis; Zhao, Ying(Candice); Beckers, Arnout; Verdonck, Patrick; Dekkers, Hendrik; Subhechha, Subhali; van Setten, Michiel J.; Chen, Zhuo; Kar, Gouri Sankar; Van Houdt, Jan; Afanasiev, Valeri
Opublikowane w: Applied Physics Letters, 2025, ISSN 1077-3118
Wydawca: AIP Publishing
DOI: 10.48550/ARXIV.2506.15238

In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI

Autorzy: Kruv, Anastasiia; van Setten, Michiel J.; Chasin, Adrian; Matsubayashi, Daisuke; Dekkers, Hendrik; Pavel, Alexandru; Wan, Yiqun; Trivedi, Kruti; Rassoul, Nouredine; Li, Jie; Jiang, Yuchao; Subhechha, Subhali; Pourtois, Geoffrey; Belmonte, Attilio; Sankar Kar, Gouri
Opublikowane w: ACS Applied Electronic Materials, 2025, ISSN 2637-6113
Wydawca: American Chemical Society
DOI: 10.48550/ARXIV.2412.07362

Understanding and mitigating oxidation-induced electrical instability in sputtered Sc thin films

Autorzy: Jeonho Kim, Indira Kiladze, Clement Porret, Bert Pollefliet, Johan Swerts
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Wydawca: American Institute of Physics
DOI: 10.1116/6.0004952

SOT-MRAM Bitcell Scaling With BEOL Read Selectors: A DTCO Study

Autorzy: Xiang, Yang; Garcia Redondo, Fernando; Sharma, Arvind Kumar; Nguyen, Van Dai; Fantini, Andrea; Matagne, Philippe; Rao, Siddharth; Subbhechha, Subhali; Verschueren, Lynn; Baig, Mohammed Aftab; Garcia Bardon, Marie; Hellings, Geert
Opublikowane w: IEEE Transactions on Electron Devices, 2025, ISSN 1557-9646
Wydawca: IEEE
DOI: 10.48550/ARXIV.2508.18250

IEEE Electron Device Letters

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DOI: 10.5281/ZENODO.18403459

Novel concept-oriented synthetic data approach for training generative AI-Driven crystal grain analysis using diffusion model

Autorzy: A.S. Saleh, K. Croes, H. Ceric, I. De Wolf, H. Zahedmanesh
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DOI: 10.1016/J.COMMATSCI.2025.113723

Other (1)

Europes pilot line to enable future compute systems

Autorzy: Srikanth B. Samavedam & Jo De Boeck
Opublikowane w: Nature reviews electrical engineering, Numer 1, 2024
Wydawca: Springer Nature