Energy-efficient Neuromorphic 2D Devices and Circuits for Edge AI Computing

Project Information

ENERGIZE

Grant agreement ID: 101194458

DOI

10.3030/101194458

EC signature date 10 October 2024

Start date 1 October 2024

End date 30 September 2027

Funded under

• Digital, Industry and Space

Total cost

€ 1 499 791,25

EU contribution

€ 1 499 791,25

Coordinated by

GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH
Germany

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Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Peer reviewed articles (11)

Integration of Low‐Voltage Nanoscale MoS ₂ Memristors on CMOS Microchips

Author(s): Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme
Published in: Advanced Functional Materials, 2026, ISSN 1616-3028
Publisher: Wiley
DOI: 10.18154/RWTH-2026-02139

Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors

Author(s): Mohit D. Ganeriwala; Alejandro Toral-López; Estela Calaforra-Ayuso; Francisco Pasadas; Francisco G. Ruiz; Enrique G. Marin; Andres Godoy
Published in: ACS Applied Nano Materials, 2024, ISSN 2574-0970
Publisher: ACS
DOI: 10.1021/ACSANM.4C04769

Hopping-transport regimes and dimensionality transition: A unified Monte Carlo random-resistor-network approach

Author(s): Alejandro Toral-Lopez, Gianluca Fiori, Damiano Marian
Published in: Physical Review Applied, Issue 25, 2026, ISSN 2331-7019
Publisher: American Physical Society (APS)
DOI: 10.1103/BX6M-635Y

Intermediate Resistive State in Wafer‐Scale Vertical MoS ₂ Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Author(s): Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme
Published in: Advanced Functional Materials, 2025, ISSN 1616-3028
Publisher: Wiley
DOI: 10.18154/RWTH-2026-00418

Fast prototyping of memristors for ReRAMs and neuromorphic computing

Author(s): Gianluca Marraccini, Sebastiano Strangio, Elisabetta Dimaggio, Riccardo Sargeni, Francesco Pieri, Yigit Sozen, Andres Castellanos-Gomez, Gianluca Fiori
Published in: Nanoscale, Issue 18, 2025, ISSN 2040-3364
Publisher: Royal Society of Chemistry (RSC)
DOI: 10.1039/D5NR02690C

Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy

Author(s): Ke Ran, Janghyun Jo, Sofía Cruces, Zhenxing Wang, Rafal E. Dunin-Borkowski, Joachim Mayer, Max C. Lemme
Published in: Nature Communications, Issue 16, 2025, ISSN 2041-1723
Publisher: Springer Science and Business Media LLC
DOI: 10.18154/RWTH-2025-07574

Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors

Author(s): Völkel, Lukas; Ahmad, Rana Walied; Bestaeva, Alana; Braun, Dennis; Cruces, Sofia; Lee, Jimin; Pasko, Sergej; Krotkus, Simonas; Heuken, Michael; Menzel, Stephan; Lemme, Max C.
Published in: npj 2D Materials and Applications, 2025, ISSN 2397-7132
Publisher: Springer Nature
DOI: 10.18154/RWTH-2025-04940

Reduced Variability in Threshold Switches Using Heterostructures of SiO _x and Vertically Aligned MoS ₂

Author(s): Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Published in: Advanced Electronic Materials, 2026, ISSN 2199-160X
Publisher: Wiley
DOI: 10.18154/RWTH-2026-03398

Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches

Author(s): Mohit D. Ganeriwala, Daniel Luque-Jarava, Francisco Pasadas, Juan J. Palacios, Francisco G. Ruiz, Andres Godoy, Enrique G. Marin
Published in: Nanoscale, Issue 17, 2025, ISSN 2040-3364
Publisher: Royal Society of Chemistry (RSC)
DOI: 10.1039/D4NR05321D

Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration

Author(s): Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Vasileios Maroufidis Andreadis, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Published in: npj 2D Materials and Applications, Issue 9, 2025, ISSN 2397-7132
Publisher: Springer Science and Business Media LLC
DOI: 10.18154/RWTH-2025-08937

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

Author(s): Sofía Cruces; Mohit D. Ganeriwala; Jimin Lee; Ke Ran; Janghyun Jo; Lukas Völkel; Dennis Braun; Bárbara Canto; Enrique G. Marín; Holger Kalisch; Michael Heuken; Andrei Vescan; Rafal E. Dunin-Borkowski; Joachim Mayer; Andrés Godoy; Alwin Daus; Max C. Lemme
Published in: Nano Letters, 2025, ISSN 1530-6992
Publisher: ACS
DOI: 10.18154/RWTH-2025-07222