Energy-efficient Neuromorphic 2D Devices and Circuits for Edge AI Computing

Informazioni relative al progetto

ENERGIZE

ID dell’accordo di sovvenzione: 101194458

DOI

10.3030/101194458

Data della firma CE 10 Ottobre 2024

Data di avvio 1 Ottobre 2024

Data di completamento 30 Settembre 2027

Finanziato da

• Digital, Industry and Space

Costo totale

€ 1 499 791,25

Contributo UE

€ 1 499 791,25

Coordinato da

GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH
Germany

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Pubblicazioni

Peer reviewed articles (11)

Integration of Low‐Voltage Nanoscale MoS ₂ Memristors on CMOS Microchips

Autori: Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme
Pubblicato in: Advanced Functional Materials, 2026, ISSN 1616-3028
Editore: Wiley
DOI: 10.18154/RWTH-2026-02139

Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors

Autori: Mohit D. Ganeriwala; Alejandro Toral-López; Estela Calaforra-Ayuso; Francisco Pasadas; Francisco G. Ruiz; Enrique G. Marin; Andres Godoy
Pubblicato in: ACS Applied Nano Materials, 2024, ISSN 2574-0970
Editore: ACS
DOI: 10.1021/ACSANM.4C04769

Hopping-transport regimes and dimensionality transition: A unified Monte Carlo random-resistor-network approach

Autori: Alejandro Toral-Lopez, Gianluca Fiori, Damiano Marian
Pubblicato in: Physical Review Applied, Numero 25, 2026, ISSN 2331-7019
Editore: American Physical Society (APS)
DOI: 10.1103/BX6M-635Y

Intermediate Resistive State in Wafer‐Scale Vertical MoS ₂ Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Autori: Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme
Pubblicato in: Advanced Functional Materials, 2025, ISSN 1616-3028
Editore: Wiley
DOI: 10.18154/RWTH-2026-00418

Fast prototyping of memristors for ReRAMs and neuromorphic computing

Autori: Gianluca Marraccini, Sebastiano Strangio, Elisabetta Dimaggio, Riccardo Sargeni, Francesco Pieri, Yigit Sozen, Andres Castellanos-Gomez, Gianluca Fiori
Pubblicato in: Nanoscale, Numero 18, 2025, ISSN 2040-3364
Editore: Royal Society of Chemistry (RSC)
DOI: 10.1039/D5NR02690C

Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy

Autori: Ke Ran, Janghyun Jo, Sofía Cruces, Zhenxing Wang, Rafal E. Dunin-Borkowski, Joachim Mayer, Max C. Lemme
Pubblicato in: Nature Communications, Numero 16, 2025, ISSN 2041-1723
Editore: Springer Science and Business Media LLC
DOI: 10.18154/RWTH-2025-07574

Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors

Autori: Völkel, Lukas; Ahmad, Rana Walied; Bestaeva, Alana; Braun, Dennis; Cruces, Sofia; Lee, Jimin; Pasko, Sergej; Krotkus, Simonas; Heuken, Michael; Menzel, Stephan; Lemme, Max C.
Pubblicato in: npj 2D Materials and Applications, 2025, ISSN 2397-7132
Editore: Springer Nature
DOI: 10.18154/RWTH-2025-04940

Reduced Variability in Threshold Switches Using Heterostructures of SiO _x and Vertically Aligned MoS ₂

Autori: Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Pubblicato in: Advanced Electronic Materials, 2026, ISSN 2199-160X
Editore: Wiley
DOI: 10.18154/RWTH-2026-03398

Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches

Autori: Mohit D. Ganeriwala, Daniel Luque-Jarava, Francisco Pasadas, Juan J. Palacios, Francisco G. Ruiz, Andres Godoy, Enrique G. Marin
Pubblicato in: Nanoscale, Numero 17, 2025, ISSN 2040-3364
Editore: Royal Society of Chemistry (RSC)
DOI: 10.1039/D4NR05321D

Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration

Autori: Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Vasileios Maroufidis Andreadis, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Pubblicato in: npj 2D Materials and Applications, Numero 9, 2025, ISSN 2397-7132
Editore: Springer Science and Business Media LLC
DOI: 10.18154/RWTH-2025-08937

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

Autori: Sofía Cruces; Mohit D. Ganeriwala; Jimin Lee; Ke Ran; Janghyun Jo; Lukas Völkel; Dennis Braun; Bárbara Canto; Enrique G. Marín; Holger Kalisch; Michael Heuken; Andrei Vescan; Rafal E. Dunin-Borkowski; Joachim Mayer; Andrés Godoy; Alwin Daus; Max C. Lemme
Pubblicato in: Nano Letters, 2025, ISSN 1530-6992
Editore: ACS
DOI: 10.18154/RWTH-2025-07222