Energy-efficient Neuromorphic 2D Devices and Circuits for Edge AI Computing

Información del proyecto

ENERGIZE

Identificador del acuerdo de subvención: 101194458

DOI

10.3030/101194458

Fecha de la firma de la CE 10 Octubre 2024

Fecha de inicio 1 Octubre 2024

Fecha de finalización 30 Septiembre 2027

Financiado con arreglo a

• Digital, Industry and Space

Coste total

€ 1 499 791,25

Aportación de la UE

€ 1 499 791,25

Coordinado por

GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH
Germany

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Websites, patent fillings, videos etc. (1)

Website and logo

Initial project website and logo released in M3, comprehensive version in M6.

Data sets, microdata, etc (1)

Device and circuit simulation setup

Circuit simulation environment to run simulation using the device model

Documents, reports (2)

Fabrication artificial neuron and artificial synapse

Report on the artificial neuron and artificial synapse based on 3-terminal memtransistor

Fabrication of 2DM-based two-terminal memristive devices with optical lithography

Report on the fabricated 2D two-terminal devices using the reliable established fabrication process

Data Management Plan (1)

Data Management Plan

Initial version of DMP, FAIR access, updated with each periodic report

Other (1)

Graduate student course

PhD students and postdocs will receive training focused on ENRGIZE topics (EU: M12, Korea: M24)

Publicaciones

Peer reviewed articles (11)

Integration of Low‐Voltage Nanoscale MoS ₂ Memristors on CMOS Microchips

Autores: Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme
Publicado en: Advanced Functional Materials, 2026, ISSN 1616-3028
Editor: Wiley
DOI: 10.18154/RWTH-2026-02139

Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors

Autores: Mohit D. Ganeriwala; Alejandro Toral-López; Estela Calaforra-Ayuso; Francisco Pasadas; Francisco G. Ruiz; Enrique G. Marin; Andres Godoy
Publicado en: ACS Applied Nano Materials, 2024, ISSN 2574-0970
Editor: ACS
DOI: 10.1021/ACSANM.4C04769

Hopping-transport regimes and dimensionality transition: A unified Monte Carlo random-resistor-network approach

Autores: Alejandro Toral-Lopez, Gianluca Fiori, Damiano Marian
Publicado en: Physical Review Applied, Edición 25, 2026, ISSN 2331-7019
Editor: American Physical Society (APS)
DOI: 10.1103/BX6M-635Y

Intermediate Resistive State in Wafer‐Scale Vertical MoS ₂ Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Autores: Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme
Publicado en: Advanced Functional Materials, 2025, ISSN 1616-3028
Editor: Wiley
DOI: 10.18154/RWTH-2026-00418

Fast prototyping of memristors for ReRAMs and neuromorphic computing

Autores: Gianluca Marraccini, Sebastiano Strangio, Elisabetta Dimaggio, Riccardo Sargeni, Francesco Pieri, Yigit Sozen, Andres Castellanos-Gomez, Gianluca Fiori
Publicado en: Nanoscale, Edición 18, 2025, ISSN 2040-3364
Editor: Royal Society of Chemistry (RSC)
DOI: 10.1039/D5NR02690C

Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy

Autores: Ke Ran, Janghyun Jo, Sofía Cruces, Zhenxing Wang, Rafal E. Dunin-Borkowski, Joachim Mayer, Max C. Lemme
Publicado en: Nature Communications, Edición 16, 2025, ISSN 2041-1723
Editor: Springer Science and Business Media LLC
DOI: 10.18154/RWTH-2025-07574

Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors

Autores: Völkel, Lukas; Ahmad, Rana Walied; Bestaeva, Alana; Braun, Dennis; Cruces, Sofia; Lee, Jimin; Pasko, Sergej; Krotkus, Simonas; Heuken, Michael; Menzel, Stephan; Lemme, Max C.
Publicado en: npj 2D Materials and Applications, 2025, ISSN 2397-7132
Editor: Springer Nature
DOI: 10.18154/RWTH-2025-04940

Reduced Variability in Threshold Switches Using Heterostructures of SiO _x and Vertically Aligned MoS ₂

Autores: Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Publicado en: Advanced Electronic Materials, 2026, ISSN 2199-160X
Editor: Wiley
DOI: 10.18154/RWTH-2026-03398

Effect of grain boundaries on metal atom migration and electronic transport in 2D TMD-based resistive switches

Autores: Mohit D. Ganeriwala, Daniel Luque-Jarava, Francisco Pasadas, Juan J. Palacios, Francisco G. Ruiz, Andres Godoy, Enrique G. Marin
Publicado en: Nanoscale, Edición 17, 2025, ISSN 2040-3364
Editor: Royal Society of Chemistry (RSC)
DOI: 10.1039/D4NR05321D

Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration

Autores: Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Vasileios Maroufidis Andreadis, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Publicado en: npj 2D Materials and Applications, Edición 9, 2025, ISSN 2397-7132
Editor: Springer Science and Business Media LLC
DOI: 10.18154/RWTH-2025-08937

Volatile and Nonvolatile Resistive Switching in Lateral 2D Molybdenum Disulfide-Based Memristive Devices

Autores: Sofía Cruces; Mohit D. Ganeriwala; Jimin Lee; Ke Ran; Janghyun Jo; Lukas Völkel; Dennis Braun; Bárbara Canto; Enrique G. Marín; Holger Kalisch; Michael Heuken; Andrei Vescan; Rafal E. Dunin-Borkowski; Joachim Mayer; Andrés Godoy; Alwin Daus; Max C. Lemme
Publicado en: Nano Letters, 2025, ISSN 1530-6992
Editor: ACS
DOI: 10.18154/RWTH-2025-07222