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Radiation Hard Resistive Random-Access Memory

Objective

The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles. The switching effect of RRAM devices is caused by chemical Redox-reactions, therefore, radiation effects like total ionizing dose and single event effects don’t affect the switching mechanism.
Semiconductor memories, among rad hard integrated circuit scenario, are one of the most critical topics for space applications. Actually both volatile and nonvolatile memories, excluding few exceptions, are integrated using standard processes and standard architectures. This means that the final device is typically at least Rad tolerant and not Rad Hard and failure during mission is avoided using Error Correcting Code techniques including redundancy at the board level. The basic goal of the project is to give a methodology for the development of a new rad-hard nonvolatile RRAM memory with high-performance features like good retention, re-programmability and cycling, and realize a prototype (1Mbit RRAM memory) in order to validate the approach.

Field of science

  • /natural sciences/chemical sciences/inorganic chemistry/inorganic compounds
  • /natural sciences/physical sciences/electromagnetism and electronics/electrical conductivity/semiconductor
  • /natural sciences/physical sciences/theoretical physics/particles

Call for proposal

H2020-COMPET-2014
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Address
Im Technologiepark 25
15236 Frankfurt Oder
Germany
Activity type
Other
EU contribution
€ 400 312,50

Participants (3)

CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Italy
EU contribution
€ 195 000
Address
Via Toffano 2
40125 Bologna
Activity type
Research Organisations
REDCAT DEVICES SRL
Italy
EU contribution
€ 349 850
Address
Via Moncucco 22
20142 Milano
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
JYVASKYLAN YLIOPISTO
Finland
EU contribution
€ 94 200
Address
Seminaarinkatu 15
40100 Jyvaskyla
Activity type
Higher or Secondary Education Establishments