Radiation Hard Resistive Random-Access Memory

Información del proyecto

R2RAM

Identificador del acuerdo de subvención: 640073

DOI 10.3030/640073

Proyecto cerrado

Fecha de la firma de la CE 17 Noviembre 2014

Fecha de inicio 1 Enero 2015

Fecha de finalización 31 Diciembre 2016

Financiado con arreglo a

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies – Space

Coste total € 1 039 362,50

Aportación de la UE € 1 039 362,50

Coordinado por

IHP GMBH - LEIBNIZ INSTITUTE FOR HIGH PERFORMANCE MICROELECTRONICS
Germany

Resultado final

Documents, reports (3)

Programming and Erasing Strategy in R2RAM

Reporting the writing and sensing schemes for programming, erasing and reading

1Mbit R2RAM Architecture

Providing the best architectural solution for the internal phases.

Read Strategy in R2RAM

Reporting the writing and sensing schemes for reading.

Websites, patent fillings, videos etc. (2)

Articles in international journals

Publications of achievements and lessons learnt through conferences, international press and peer-reviewed journals .

R2RAM website

Development of a web site that provides open access to the results achieved within the Project.

Publicaciones

Peer reviewed articles (9)

Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

Autores: Alessandro Grossi, Cristian Zambelli, Piero Olivo, Enrique Miranda, Valeriy Stikanov, Christian Walczyk, Christian Wenger
Publicado en: Solid-State Electronics, Edición 115, 2016, Página(s) 17-25, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2015.10.003

Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays

Autores: Alessandro Grossi, Damian Walczyk, Cristian Zambelli, Enrique Miranda, Piero Olivo, Valeriy Stikanov, Alessandro Feriani, Jordi Sune, Gunter Schoof, Rolf Kraemer, Bernd Tillack, Alexander Fox, Thomas Schroeder, Christian Wenger, Christian Walczyk
Publicado en: IEEE Transactions on Electron Devices, Edición 62/8, 2015, Página(s) 2502-2509, ISSN 0018-9383
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2015.2442412

Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods

Autores: Hee-Dong Kim, Felice Crupi, Mindaugas Lukosius, Andreas Trusch, Christian Walczyk, Christian Wenger
Publicado en: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Edición 33/5, 2015, Página(s) 052204, ISSN 2166-2754
Editor: AVS Science and Technology Society
DOI: 10.1116/1.4928412

Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays

Autores: Felice Crupi, Francesco Filice, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Eduardo Perez, Christian Wenger
Publicado en: IEEE Transactions on Device and Materials Reliability, Edición 16/3, 2016, Página(s) 413-418, ISSN 1530-4388
Editor: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TDMR.2016.2594119

An Automated Test Equipment for Characterization of emerging MRAM and RRAM arrays

Autores: Alessandro Grossi, Cristian Zambelli, Piero Olivo, Paolo Pellati, Michele Ramponi, Christian Wenger, Jeremy Alvarez-Herault, Ken Mackay
Publicado en: IEEE Transactions on Emerging Topics in Computing, 2016, Página(s) 1-1, ISSN 2168-6750
Editor: IEEE Computer Society
DOI: 10.1109/TETC.2016.2585043

Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

Autores: Alessandro Grossi, Cristian Zambelli, Piero Olivo, Alberto Crespo-Yepes, Javier Martin-Martinez, Rosana Rodríguez, Monserrat Nafria, Eduardo Perez, Christian Wenger
Publicado en: Solid-State Electronics, 2016, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2016.10.025

Impact of the incremental programming algorithm on the filament conduction in HfO2 based RRAM arrays

Autores: Eduardo Perez, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Christian Wenger
Publicado en: IEEE Journal of the Electron Devices Society, 2016, Página(s) 1-1, ISSN 2168-6734
Editor: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/JEDS.2016.2618425

Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices

Autores: Eduardo Pérez, Christian Wenger, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Robin Roelofs
Publicado en: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Edición 35/1, 2017, Página(s) 01A103, ISSN 2166-2754
Editor: AVS Science and Technology Society
DOI: 10.1116/1.4967308

Electrical study of radiation hard designed HfO2-based 1T-1R RRAM devices

Autores: Eduardo Pérez, Florian Teply, Christian Wenger
Publicado en: MRS Advances, 2016, Página(s) 1-6, ISSN 2059-8521
Editor: MRS Advances
DOI: 10.1557/adv.2016.616

Conference proceedings (6)

Radiation hard design of HfO2 based 1T1R cells and memory arrays

Autores: Alessandro Grossi, Cristiano Calligaro, Eduardo Perez, Jens Schmidt, Florian Teply, Thomas Mausolf, Cristian Zambelli, Piero Olivo, Christian Wenger
Publicado en: 2015 International Conference on Memristive Systems (MEMRISYS), 2015, Página(s) 1-2, ISBN 978-1-4673-9209-9
Editor: IEEE
DOI: 10.1109/MEMRISYS.2015.7378390

Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2

Autores: Alessandro Grossi, Eduardo Perez, Cristian Zambelli, Piero Olivo, Christian Wenger
Publicado en: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016, Página(s) 80-83, ISBN 978-1-4673-8609-8
Editor: IEEE
DOI: 10.1109/ULIS.2016.7440057

RRAM Reliability/Performance Characterization through Array Architectures Investigations

Autores: Cristian Zambelli, Alessandro Grossi, Piero Olivo, Christian Walczyk, Christian Wenger
Publicado en: 2015 IEEE Computer Society Annual Symposium on VLSI, 2015, Página(s) 327-332, ISBN 978-1-4799-8719-1
Editor: IEEE
DOI: 10.1109/ISVLSI.2015.17

Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays

Autores: Alessandro Grossi, Cristian Zambelli, Piero Olivo, Enrique Miranda, Valeriy Stikanov, Thomas Schroeder, Christian Walczyk, Christian Wenger
Publicado en: 2015 IEEE International Memory Workshop (IMW), 2015, Página(s) 1-4, ISBN 978-1-4673-6933-6
Editor: IEEE
DOI: 10.1109/IMW.2015.7150303

Design of resistive non-volatile memories for rad-hard applications

Autores: Nicola Lupo; Cristiano Calligaro; Roberto Gastaldi; Christian Wenger; Franco Maloberti
Publicado en: 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016, Página(s) 1594-1597
Editor: IEEE Xpolore
DOI: 10.1109/ISCAS.2016.7538869

Impact of HfO2 Deposition Techniques on the Switching Parameters in embedded 1T-1R Cells and Arrays

Autores: A. Grossi, E. Perez, C. Zambelli, P. Olivo, Ch. Wenger
Publicado en: Workshop on Dielectrics in Microelectronics (WoDiM 2016), 2016
Editor: unknown