Radiation Hard Resistive Random-Access Memory

Projektinformationen

R2RAM

ID Finanzhilfevereinbarung: 640073

DOI 10.3030/640073

Projekt abgeschlossen

EK-Unterschriftsdatum 17 November 2014

Startdatum 1 Januar 2015

Enddatum 31 Dezember 2016

Finanziert unter

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies – Space

Gesamtkosten € 1 039 362,50

EU-Beitrag € 1 039 362,50

Koordiniert durch

IHP GMBH - LEIBNIZ INSTITUTE FOR HIGH PERFORMANCE MICROELECTRONICS
Germany

Leistungen

Documents, reports (3)

Programming and Erasing Strategy in R2RAM

Reporting the writing and sensing schemes for programming, erasing and reading

1Mbit R2RAM Architecture

Providing the best architectural solution for the internal phases.

Read Strategy in R2RAM

Reporting the writing and sensing schemes for reading.

Websites, patent fillings, videos etc. (2)

Articles in international journals

Publications of achievements and lessons learnt through conferences, international press and peer-reviewed journals .

R2RAM website

Development of a web site that provides open access to the results achieved within the Project.

Veröffentlichungen

Peer reviewed articles (9)

Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays

Autoren: Alessandro Grossi, Cristian Zambelli, Piero Olivo, Enrique Miranda, Valeriy Stikanov, Christian Walczyk, Christian Wenger
Veröffentlicht in: Solid-State Electronics, Ausgabe 115, 2016, Seite(n) 17-25, ISSN 0038-1101
Herausgeber: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2015.10.003

Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays

Autoren: Alessandro Grossi, Damian Walczyk, Cristian Zambelli, Enrique Miranda, Piero Olivo, Valeriy Stikanov, Alessandro Feriani, Jordi Sune, Gunter Schoof, Rolf Kraemer, Bernd Tillack, Alexander Fox, Thomas Schroeder, Christian Wenger, Christian Walczyk
Veröffentlicht in: IEEE Transactions on Electron Devices, Ausgabe 62/8, 2015, Seite(n) 2502-2509, ISSN 0018-9383
Herausgeber: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TED.2015.2442412

Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods

Autoren: Hee-Dong Kim, Felice Crupi, Mindaugas Lukosius, Andreas Trusch, Christian Walczyk, Christian Wenger
Veröffentlicht in: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Ausgabe 33/5, 2015, Seite(n) 052204, ISSN 2166-2754
Herausgeber: AVS Science and Technology Society
DOI: 10.1116/1.4928412

Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays

Autoren: Felice Crupi, Francesco Filice, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Eduardo Perez, Christian Wenger
Veröffentlicht in: IEEE Transactions on Device and Materials Reliability, Ausgabe 16/3, 2016, Seite(n) 413-418, ISSN 1530-4388
Herausgeber: Institute of Electrical and Electronics Engineers
DOI: 10.1109/TDMR.2016.2594119

An Automated Test Equipment for Characterization of emerging MRAM and RRAM arrays

Autoren: Alessandro Grossi, Cristian Zambelli, Piero Olivo, Paolo Pellati, Michele Ramponi, Christian Wenger, Jeremy Alvarez-Herault, Ken Mackay
Veröffentlicht in: IEEE Transactions on Emerging Topics in Computing, 2016, Seite(n) 1-1, ISSN 2168-6750
Herausgeber: IEEE Computer Society
DOI: 10.1109/TETC.2016.2585043

Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2

Autoren: Alessandro Grossi, Cristian Zambelli, Piero Olivo, Alberto Crespo-Yepes, Javier Martin-Martinez, Rosana Rodríguez, Monserrat Nafria, Eduardo Perez, Christian Wenger
Veröffentlicht in: Solid-State Electronics, 2016, ISSN 0038-1101
Herausgeber: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2016.10.025

Impact of the incremental programming algorithm on the filament conduction in HfO2 based RRAM arrays

Autoren: Eduardo Perez, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Christian Wenger
Veröffentlicht in: IEEE Journal of the Electron Devices Society, 2016, Seite(n) 1-1, ISSN 2168-6734
Herausgeber: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/JEDS.2016.2618425

Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices

Autoren: Eduardo Pérez, Christian Wenger, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Robin Roelofs
Veröffentlicht in: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Ausgabe 35/1, 2017, Seite(n) 01A103, ISSN 2166-2754
Herausgeber: AVS Science and Technology Society
DOI: 10.1116/1.4967308

Electrical study of radiation hard designed HfO2-based 1T-1R RRAM devices

Autoren: Eduardo Pérez, Florian Teply, Christian Wenger
Veröffentlicht in: MRS Advances, 2016, Seite(n) 1-6, ISSN 2059-8521
Herausgeber: MRS Advances
DOI: 10.1557/adv.2016.616

Conference proceedings (6)

Radiation hard design of HfO2 based 1T1R cells and memory arrays

Autoren: Alessandro Grossi, Cristiano Calligaro, Eduardo Perez, Jens Schmidt, Florian Teply, Thomas Mausolf, Cristian Zambelli, Piero Olivo, Christian Wenger
Veröffentlicht in: 2015 International Conference on Memristive Systems (MEMRISYS), 2015, Seite(n) 1-2, ISBN 978-1-4673-9209-9
Herausgeber: IEEE
DOI: 10.1109/MEMRISYS.2015.7378390

Performance and reliability comparison of 1T-1R RRAM arrays with amorphous and polycrystalline HfO2

Autoren: Alessandro Grossi, Eduardo Perez, Cristian Zambelli, Piero Olivo, Christian Wenger
Veröffentlicht in: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016, Seite(n) 80-83, ISBN 978-1-4673-8609-8
Herausgeber: IEEE
DOI: 10.1109/ULIS.2016.7440057

RRAM Reliability/Performance Characterization through Array Architectures Investigations

Autoren: Cristian Zambelli, Alessandro Grossi, Piero Olivo, Christian Walczyk, Christian Wenger
Veröffentlicht in: 2015 IEEE Computer Society Annual Symposium on VLSI, 2015, Seite(n) 327-332, ISBN 978-1-4799-8719-1
Herausgeber: IEEE
DOI: 10.1109/ISVLSI.2015.17

Relationship among Current Fluctuations during Forming, Cell-To-Cell Variability and Reliability in RRAM Arrays

Autoren: Alessandro Grossi, Cristian Zambelli, Piero Olivo, Enrique Miranda, Valeriy Stikanov, Thomas Schroeder, Christian Walczyk, Christian Wenger
Veröffentlicht in: 2015 IEEE International Memory Workshop (IMW), 2015, Seite(n) 1-4, ISBN 978-1-4673-6933-6
Herausgeber: IEEE
DOI: 10.1109/IMW.2015.7150303

Design of resistive non-volatile memories for rad-hard applications

Autoren: Nicola Lupo; Cristiano Calligaro; Roberto Gastaldi; Christian Wenger; Franco Maloberti
Veröffentlicht in: 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016, Seite(n) 1594-1597
Herausgeber: IEEE Xpolore
DOI: 10.1109/ISCAS.2016.7538869

Impact of HfO2 Deposition Techniques on the Switching Parameters in embedded 1T-1R Cells and Arrays

Autoren: A. Grossi, E. Perez, C. Zambelli, P. Olivo, Ch. Wenger
Veröffentlicht in: Workshop on Dielectrics in Microelectronics (WoDiM 2016), 2016
Herausgeber: unknown