Green Electronics with Diamond Power Devices

Informazioni relative al progetto

GreenDiamond

ID dell’accordo di sovvenzione: 640947

DOI 10.3030/640947

Progetto chiuso

Data della firma CE 16 Aprile 2015

Data di avvio 1 Maggio 2015

Data di completamento 31 Ottobre 2020

Finanziato da

• SOCIETAL CHALLENGES - Secure, clean and efficient energy

Costo totale € 4 443 920,00

Contributo UE € 3 983 756,00

Coordinato da

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France

Risultati finali

Documents, reports (11)

Executive summary on surface and interface characterizations of stacked layers (associated with Task 4.5).

Executive summary on surface and interface characterizations of stacked layers (associated with Task 4.5). Full report will be confidential.

Executive summary on the process conditions and crystalline quality of epitaxy of active layers (associated with Task 4.4).

Executive summary on the process conditions and crystalline quality of epitaxy of active layers (associated with Task 4.4). Full report will be confidential.

Report on understanding of early stages of epitaxial layer growth for p, nitrogen, n and p+ doped diamond layers (associated with Task 4.2).

Report on understanding of early stages of epitaxial layer growth for p nitrogen n and p doped diamond layers associated with Task 42

Executive summary on deep etching process parameters to access the buried electrical contact (associated with Task 5.3).

Executive summary on deep etching process parameters to access the buried electrical contact (associated with Task 5.3). Full report will be confidential.

Refined bulk and surface defect analyses on selected set of substrates
GreenDiamond Workshop I
GreenDiamond Workshop II
Report on the electrical performance of the DC and AC small signal characterization bench
Video for public interest
Executive summary on optimal baseplate and ceramic substrate for diamond MOS packaging (associated with Task 7.1)

Executive summary on optimal baseplate and ceramic substrate for diamond MOS packaging (associated with Task 7.1) Full report will be confidential.

Project Branding Logo and Website

Demonstrators, pilots, prototypes (1)

Executive summary on laboratory test validations report (associated with Task 9.6 and Task 9.7).

Executive summary on laboratory test validations report (associated with Task 9.6 and Task 9.7). Full report will be confidiential.

Pubblicazioni

Peer reviewed articles (40)

Optimizing reactive ion etching to remove sub-surface polishing damage on diamond

Autori: Marie-Laure Hicks, Alexander C. Pakpour-Tabrizi, Verena Zuerbig, Lutz Kirste, Christoph Nebel, Richard B. Jackman
Pubblicato in: Journal of Applied Physics, Numero 125/24, 2019, Pagina/e 244502, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.5094751

The occupied electronic structure of ultrathin boron doped diamond

Autori: A. C. Pakpour-Tabrizi, A. K. Schenk, A. J. U. Holt, S. K. Mahatha, F. Arnold, M. Bianchi, R. B. Jackman, J. E. Butler, A. Vikharev, J. A. Miwa, P. Hofmann, S. P. Cooil, J. W. Wells, F. Mazzola
Pubblicato in: Nanoscale Advances, Numero 2/3, 2020, Pagina/e 1358-1364, ISSN 2516-0230
Editore: Royal Society of Chemistry
DOI: 10.1039/c9na00593e

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

Autori: Marina Gutiérrez, Fernando Lloret, Toan Pham, Jesús Cañas, Daniel Reyes, David Eon, Julien Pernot, Daniel Araújo
Pubblicato in: Nanomaterials, Numero 8/8, 2018, Pagina/e 584, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano8080584

Comprehensive electrical analysis of metal/Al 2 O 3 /O-terminated diamond capacitance

Autori: T. T. Pham, A. Maréchal, P. Muret, D. Eon, E. Gheeraert, N. Rouger, J. Pernot
Pubblicato in: Journal of Applied Physics, Numero 123/16, 2018, Pagina/e 161523, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.4996114

H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

Autori: Gonzalo Alba, David Eon, M. Pilar Villar, Rodrigo Alcántara, Gauthier Chicot, Jesús Cañas, Juliette Letellier, Julien Pernot, Daniel Araujo
Pubblicato in: Surfaces, Numero 3/1, 2020, Pagina/e 61-71, ISSN 2571-9637
Editore: MDPI
DOI: 10.3390/surfaces3010007

Dislocations imaging in low boron doped diamond epilayers using Field Emission Scanning Electron Microscopy (FE-SEM)

Autori: C. Barbay, S. Saada, C. Mer-Calfati, S. Temgoua, J. Barjon, J.C. Arnault
Pubblicato in: Applied Surface Science, Numero 495, 2019, Pagina/e 143564, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2019.143564

Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models

Autori: Gonzalo Alba, M. Pilar Villar, Rodrigo Alcántara, Javier Navas, Daniel Araujo
Pubblicato in: Nanomaterials, Numero 10/6, 2020, Pagina/e 1193, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano10061193

Polishing, preparation and patterning of diamond for device applications

Autori: M.-L. Hicks, Alexander C. Pakpour-Tabrizi, Richard B. Jackman
Pubblicato in: Diamond and Related Materials, Numero 97, 2019, Pagina/e 107424, ISSN 0925-9635
Editore: Elsevier BV
DOI: 10.1016/j.diamond.2019.05.010

Design of a normally-off diamond JFET for high power integrated applications

Autori: N. Donato, D. Pagnano, E. Napoli, G. Longobardi, F. Udrea
Pubblicato in: Diamond and Related Materials, Numero 78, 2017, Pagina/e 73-82, ISSN 0925-9635
Editore: Elsevier BV
DOI: 10.1016/j.diamond.2017.08.003

Diamond semiconductor performances in power electronics applications

Autori: Gaëtan Perez, Aurélien Maréchal, Gauthier Chicot, Pierre Lefranc, Pierre-Olivier Jeannin, David Eon, Nicolas Rouger
Pubblicato in: Diamond and Related Materials, Numero 110, 2020, Pagina/e 108154, ISSN 0925-9635
Editore: Elsevier BV
DOI: 10.1016/j.diamond.2020.108154

Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond

Autori: Christoph Schreyvogel, Solange Temgoua, Christian Giese, Volker Cimalla, Julien Barjon, Christoph. E. Nebel
Pubblicato in: physica status solidi (a), 2021, Pagina/e 2000502, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202000502

Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth

Autori: Fernando Lloret, David Eon, Etienne Bustarret, Alexandre Fiori, Daniel Araujo
Pubblicato in: Nanomaterials, Numero 8/7, 2018, Pagina/e 480, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano8070480

Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

Autori: O. Loto, M. Florentin, C. Masante, N. Donato, M.-L. Hicks, A. C. Pakpour-Tabrizi, R. B. Jackman, V. Zuerbig, P. Godignon, D. Eon, J. Pernot, F. Udrea, E. Gheeraert
Pubblicato in: IEEE Transactions on Electron Devices, Numero 65/8, 2018, Pagina/e 3361-3364, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2847340

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

Autori: J.C. Piñero, J. de Vecchy, D. Fernández, G. Alba, J. Widiez, L. Di Cioccio, F. Lloret, D. Araujo, J. Pernot
Pubblicato in: Applied Surface Science, Numero 528, 2020, Pagina/e 146998, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2020.146998

Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

Autori: G. Alba, D. Leinen, M.P. Villar, R. Alcántara, J.C. Piñero, A. Fiori, T. Teraji, D. Araujo
Pubblicato in: Applied Surface Science, Numero 537, 2021, Pagina/e 147874, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2020.147874

High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

Autori: J.C. Piñero, F. Lloret, M.P. Alegre, M.P. Villar, A. Fiori, E. Bustarret, D. Araújo
Pubblicato in: Applied Surface Science, Numero 461, 2018, Pagina/e 221-226, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2018.07.097

Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

Autori: J. Cañas, J.C. Piñero, F. Lloret, M. Gutierrez, T. Pham, J. Pernot, D. Araujo
Pubblicato in: Applied Surface Science, Numero 461, 2018, Pagina/e 93-97, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2018.06.163

Diamond/γ-alumina band offset determination by XPS

Autori: J. Cañas, G. Alba, D. Leinen, F. Lloret, M. Gutierrez, D. Eon, J. Pernot, E. Gheeraert, D. Araujo
Pubblicato in: Applied Surface Science, Numero 535, 2021, Pagina/e 146301, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2020.146301

Analysis by HR-STEM of the Strain Generation in InP after SiNx Deposition and ICP Etching

Autori: M. Gutiérrez, D. F. Reyes, D. Araujo, J. P. Landesman, E. Pargon
Pubblicato in: Journal of Electronic Materials, Numero 49/9, 2020, Pagina/e 5226-5231, ISSN 0361-5235
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1007/s11664-020-08312-6

Thick homoepitaxial (110)-oriented phosphorus-doped n -type diamond

Autori: Y. Balasubramaniam, P. Pobedinskas, S. D. Janssens, G. Sakr, F. Jomard, S. Turner, Y.-G. Lu, W. Dexters, A. Soltani, J. Verbeeck, J. Barjon, M. Nesládek, K. Haenen
Pubblicato in: Applied Physics Letters, Numero 109/6, 2016, Pagina/e 062105, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.4960970

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

Autori: J.C. Piñero, D. Araújo, C.E. Pastore, M. Gutierrez, C. Frigeri, A. Benali, J.F. Lelièvre, M. Gendry
Pubblicato in: Applied Surface Science, Numero 395, 2017, Pagina/e 195-199, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2016.07.144

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Autori: J.C. Piñero, D. Araújo, A. Fiori, A. Traoré, M.P. Villar, D. Eon, P. Muret, J. Pernot, T. Teraji
Pubblicato in: Applied Surface Science, Numero 395, 2017, Pagina/e 200-207, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2016.04.166

Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates

Autori: Fernando Lloret, Daniel Araujo, David Eon, María del Pilar Villar, Juan-María Gonzalez-Leal, Etienne Bustarret
Pubblicato in: physica status solidi (a), Numero 213/10, 2016, Pagina/e 2570-2574, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201600182

Nanometric diamond delta doping with boron

Autori: James E. Butler, Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev, Valerii Chernov, Sergey Bogdanov, Mikail Drozdov, Evgeniy Demidov, Ekaterina Surovegina, Vladimir Shashkin, Albert Davydov, Haiyan Tan, Louisa Meshi, Alexander C. Pakpour-Tabrizi, Marie-Laure Hicks, Richard B. Jackman
Pubblicato in: physica status solidi (RRL) - Rapid Research Letters, Numero 11/1, 2017, Pagina/e 1600329, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201600329

Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

Autori: F. Lloret, A. Fiori, D. Araujo, D. Eon, M. P. Villar, E. Bustarret
Pubblicato in: Applied Physics Letters, Numero 108/18, 2016, Pagina/e 181901, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.4948373

TEM study of defects versus growth orientations in heavily boron-doped diamond

Autori: F. Lloret, D. Araujo, M. P. Alegre, J. M. Gonzalez-Leal, M. P. Villar, D. Eon, E. Bustarret
Pubblicato in: physica status solidi (a), Numero 212/11, 2015, Pagina/e 2468-2473, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201532175

Si NWs Conversion to Si-SiC Core-Shell NWs by MBE

Autori: Fernando Lloret, D. Araujo, M.P. Villar, L. Liu, Konstantinos Zekentes
Pubblicato in: Materials Science Forum, Numero 821-823, 2015, Pagina/e 965-969, ISSN 1662-9752
Editore: Trans Tech Publications
DOI: 10.4028/www.scientific.net/MSF.821-823.965

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Autori: J.C. Piñero, D. Araújo, A. Fiori, A. Traoré, M.P. Villar, D. Eon, P. Muret, J. Pernot, T. Teraji
Pubblicato in: Applied Surface Science, 2016, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2016.04.166

Potential barrier heights at metal on oxygen-terminated diamond interfaces

Autori: P. Muret, A. Traoré, A. Maréchal, D. Eon, J. Pernot, J. C. Pinẽro, M. P. Villar, D. Araujo
Pubblicato in: Journal of Applied Physics, Numero 118/20, 2015, Pagina/e 204505, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/1.4936317

Optimal drift region for diamond power devices

Autori: Gauthier Chicot, David Eon, Nicolas Rouger
Pubblicato in: Diamond and Related Materials, Numero 69, 2016, Pagina/e 68-73, ISSN 0925-9635
Editore: Elsevier BV
DOI: 10.1016/j.diamond.2016.07.006

Diamond Etching Beyond 10 μm with Near-Zero Micromasking

Autori: Marie-Laure Hicks, Alexander C. Pakpour-Tabrizi, Richard B. Jackman
Pubblicato in: Scientific Reports, Numero 9/1, 2019, ISSN 2045-2322
Editore: Nature Publishing Group
DOI: 10.1038/s41598-019-51970-8

Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

Autori: Rozita Rouzbahani, Shannon S. Nicley, Danny E.P. Vanpoucke, Fernando Lloret, Paulius Pobedinskas, Daniel Araujo, Ken Haenen
Pubblicato in: Carbon, Numero 172, 2021, Pagina/e 463-473, ISSN 0008-6223
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.carbon.2020.10.061

Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

Autori: Javier Navas, Daniel Araujo, José Carlos Piñero, Antonio Sánchez-Coronilla, Eduardo Blanco, Pilar Villar, Rodrigo Alcántara, Josep Montserrat, Matthieu Florentin, David Eon, Julien Pernot
Pubblicato in: Applied Surface Science, Numero 433, 2018, Pagina/e 408-418, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2017.10.065

Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications

Autori: Thu Nhi Tran Thi, J. Morse, D. Caliste, B. Fernandez, D. Eon, J. Härtwig, C. Barbay, C. Mer-Calfati, N. Tranchant, J. C. Arnault, T. A. Lafford, J. Baruchel
Pubblicato in: Journal of Applied Crystallography, Numero 50/2, 2017, Pagina/e 561-569, ISSN 1600-5767
Editore: International Union of Crystallography
DOI: 10.1107/s1600576717003831

2D hole gas mobility at diamond/insulator interface

Autori: G. Daligou, J. Pernot
Pubblicato in: Applied Physics Letters, Numero 116/16, 2020, Pagina/e 162105, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0002768

MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density

Autori: Fernando Lloret, Marina Gutierrez, Daniel Araujo, David Eon, Etienne Bustarret
Pubblicato in: physica status solidi (a), Numero 214/11, 2017, Pagina/e 1700242, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201700242

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Autori: Nicolas Rouger; Florin Udrea; Giorgia Longobardi; Nazareno Donato; Julien Pernot; Julien Pernot
Pubblicato in: Journal of Physics D: Applied Physics, 2019, ISSN 0022-3727
Editore: Institute of Physics Publishing
DOI: 10.17863/cam.52722

Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth

Autori: Fernando Lloret, David Eon, Etienne Bustarret, Daniel Araujo
Pubblicato in: Nanomaterials, Numero 8/10, 2018, Pagina/e 814, ISSN 2079-4991
Editore: MDPI
DOI: 10.3390/nano8100814

High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication

Autori: T. T. Pham, M. Gutiérrez, C. Masante, N. Rouger, D. Eon, E. Gheeraert, D. Araùjo, J. Pernot
Pubblicato in: Applied Physics Letters, Numero 112/10, 2018, Pagina/e 102103, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/1.5018403

Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Autori: Gaëtan Perez, Gauthier Chicot, Yvan Avenas, Pierre Lefranc, Pierre-Olivier Jeannin, David Eon, Nicolas Rouger
Pubblicato in: Diamond and Related Materials, Numero 78, 2017, Pagina/e 83-87, ISSN 0925-9635
Editore: Elsevier BV
DOI: 10.1016/j.diamond.2017.08.008