Green Electronics with Diamond Power Devices

Rezultaty

Executive summary on surface and interface characterizations of stacked layers (associated with Task 4.5).

Executive summary on surface and interface characterizations of stacked layers (associated with Task 4.5). Full report will be confidential.

Executive summary on the process conditions and crystalline quality of epitaxy of active layers (associated with Task 4.4).

Executive summary on the process conditions and crystalline quality of epitaxy of active layers (associated with Task 4.4). Full report will be confidential.

Report on understanding of early stages of epitaxial layer growth for p, nitrogen, n and p+ doped diamond layers (associated with Task 4.2).

Report on understanding of early stages of epitaxial layer growth for p nitrogen n and p doped diamond layers associated with Task 42

Executive summary on deep etching process parameters to access the buried electrical contact (associated with Task 5.3).

Executive summary on deep etching process parameters to access the buried electrical contact (associated with Task 5.3). Full report will be confidential.

Refined bulk and surface defect analyses on selected set of substrates
GreenDiamond Workshop I
GreenDiamond Workshop II
Report on the electrical performance of the DC and AC small signal characterization bench
Video for public interest
Executive summary on optimal baseplate and ceramic substrate for diamond MOS packaging (associated with Task 7.1)

Executive summary on optimal baseplate and ceramic substrate for diamond MOS packaging (associated with Task 7.1) Full report will be confidential.

Project Branding Logo and Website

Executive summary on laboratory test validations report (associated with Task 9.6 and Task 9.7).

Executive summary on laboratory test validations report (associated with Task 9.6 and Task 9.7). Full report will be confidiential.

Publikacje

Optimizing reactive ion etching to remove sub-surface polishing damage on diamond

Autorzy: Marie-Laure Hicks, Alexander C. Pakpour-Tabrizi, Verena Zuerbig, Lutz Kirste, Christoph Nebel, Richard B. Jackman
Opublikowane w: Journal of Applied Physics, Numer 125/24, 2019, Strona(/y) 244502, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/1.5094751

The occupied electronic structure of ultrathin boron doped diamond

Autorzy: A. C. Pakpour-Tabrizi, A. K. Schenk, A. J. U. Holt, S. K. Mahatha, F. Arnold, M. Bianchi, R. B. Jackman, J. E. Butler, A. Vikharev, J. A. Miwa, P. Hofmann, S. P. Cooil, J. W. Wells, F. Mazzola
Opublikowane w: Nanoscale Advances, Numer 2/3, 2020, Strona(/y) 1358-1364, ISSN 2516-0230
Wydawca: Royal Society of Chemistry
DOI: 10.1039/c9na00593e

Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs

Autorzy: Marina Gutiérrez, Fernando Lloret, Toan Pham, Jesús Cañas, Daniel Reyes, David Eon, Julien Pernot, Daniel Araújo
Opublikowane w: Nanomaterials, Numer 8/8, 2018, Strona(/y) 584, ISSN 2079-4991
Wydawca: MDPI
DOI: 10.3390/nano8080584

Comprehensive electrical analysis of metal/Al 2 O 3 /O-terminated diamond capacitance

Autorzy: T. T. Pham, A. Maréchal, P. Muret, D. Eon, E. Gheeraert, N. Rouger, J. Pernot
Opublikowane w: Journal of Applied Physics, Numer 123/16, 2018, Strona(/y) 161523, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/1.4996114

H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

Autorzy: Gonzalo Alba, David Eon, M. Pilar Villar, Rodrigo Alcántara, Gauthier Chicot, Jesús Cañas, Juliette Letellier, Julien Pernot, Daniel Araujo
Opublikowane w: Surfaces, Numer 3/1, 2020, Strona(/y) 61-71, ISSN 2571-9637
Wydawca: MDPI
DOI: 10.3390/surfaces3010007

Dislocations imaging in low boron doped diamond epilayers using Field Emission Scanning Electron Microscopy (FE-SEM)

Autorzy: C. Barbay, S. Saada, C. Mer-Calfati, S. Temgoua, J. Barjon, J.C. Arnault
Opublikowane w: Applied Surface Science, Numer 495, 2019, Strona(/y) 143564, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2019.143564

Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models

Autorzy: Gonzalo Alba, M. Pilar Villar, Rodrigo Alcántara, Javier Navas, Daniel Araujo
Opublikowane w: Nanomaterials, Numer 10/6, 2020, Strona(/y) 1193, ISSN 2079-4991
Wydawca: MDPI
DOI: 10.3390/nano10061193

Polishing, preparation and patterning of diamond for device applications

Autorzy: M.-L. Hicks, Alexander C. Pakpour-Tabrizi, Richard B. Jackman
Opublikowane w: Diamond and Related Materials, Numer 97, 2019, Strona(/y) 107424, ISSN 0925-9635
Wydawca: Elsevier BV
DOI: 10.1016/j.diamond.2019.05.010

Design of a normally-off diamond JFET for high power integrated applications

Autorzy: N. Donato, D. Pagnano, E. Napoli, G. Longobardi, F. Udrea
Opublikowane w: Diamond and Related Materials, Numer 78, 2017, Strona(/y) 73-82, ISSN 0925-9635
Wydawca: Elsevier BV
DOI: 10.1016/j.diamond.2017.08.003

Diamond semiconductor performances in power electronics applications

Autorzy: Gaëtan Perez, Aurélien Maréchal, Gauthier Chicot, Pierre Lefranc, Pierre-Olivier Jeannin, David Eon, Nicolas Rouger
Opublikowane w: Diamond and Related Materials, Numer 110, 2020, Strona(/y) 108154, ISSN 0925-9635
Wydawca: Elsevier BV
DOI: 10.1016/j.diamond.2020.108154

Fabrication of n‐Type Doped V‐Shaped Structures on (100) Diamond

Autorzy: Christoph Schreyvogel, Solange Temgoua, Christian Giese, Volker Cimalla, Julien Barjon, Christoph. E. Nebel
Opublikowane w: physica status solidi (a), 2021, Strona(/y) 2000502, ISSN 1862-6300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202000502

Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth

Autorzy: Fernando Lloret, David Eon, Etienne Bustarret, Alexandre Fiori, Daniel Araujo
Opublikowane w: Nanomaterials, Numer 8/7, 2018, Strona(/y) 480, ISSN 2079-4991
Wydawca: MDPI
DOI: 10.3390/nano8070480

Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

Autorzy: O. Loto, M. Florentin, C. Masante, N. Donato, M.-L. Hicks, A. C. Pakpour-Tabrizi, R. B. Jackman, V. Zuerbig, P. Godignon, D. Eon, J. Pernot, F. Udrea, E. Gheeraert
Opublikowane w: IEEE Transactions on Electron Devices, Numer 65/8, 2018, Strona(/y) 3361-3364, ISSN 0018-9383
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2018.2847340

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

Autorzy: J.C. Piñero, J. de Vecchy, D. Fernández, G. Alba, J. Widiez, L. Di Cioccio, F. Lloret, D. Araujo, J. Pernot
Opublikowane w: Applied Surface Science, Numer 528, 2020, Strona(/y) 146998, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2020.146998

Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

Autorzy: G. Alba, D. Leinen, M.P. Villar, R. Alcántara, J.C. Piñero, A. Fiori, T. Teraji, D. Araujo
Opublikowane w: Applied Surface Science, Numer 537, 2021, Strona(/y) 147874, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2020.147874

High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

Autorzy: J.C. Piñero, F. Lloret, M.P. Alegre, M.P. Villar, A. Fiori, E. Bustarret, D. Araújo
Opublikowane w: Applied Surface Science, Numer 461, 2018, Strona(/y) 221-226, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2018.07.097

Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

Autorzy: J. Cañas, J.C. Piñero, F. Lloret, M. Gutierrez, T. Pham, J. Pernot, D. Araujo
Opublikowane w: Applied Surface Science, Numer 461, 2018, Strona(/y) 93-97, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2018.06.163

Diamond/γ-alumina band offset determination by XPS

Autorzy: J. Cañas, G. Alba, D. Leinen, F. Lloret, M. Gutierrez, D. Eon, J. Pernot, E. Gheeraert, D. Araujo
Opublikowane w: Applied Surface Science, Numer 535, 2021, Strona(/y) 146301, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2020.146301

Analysis by HR-STEM of the Strain Generation in InP after SiNx Deposition and ICP Etching

Autorzy: M. Gutiérrez, D. F. Reyes, D. Araujo, J. P. Landesman, E. Pargon
Opublikowane w: Journal of Electronic Materials, Numer 49/9, 2020, Strona(/y) 5226-5231, ISSN 0361-5235
Wydawca: Institute of Electrical and Electronics Engineers
DOI: 10.1007/s11664-020-08312-6

Thick homoepitaxial (110)-oriented phosphorus-doped n -type diamond

Autorzy: Y. Balasubramaniam, P. Pobedinskas, S. D. Janssens, G. Sakr, F. Jomard, S. Turner, Y.-G. Lu, W. Dexters, A. Soltani, J. Verbeeck, J. Barjon, M. Nesládek, K. Haenen
Opublikowane w: Applied Physics Letters, Numer 109/6, 2016, Strona(/y) 062105, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4960970

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

Autorzy: J.C. Piñero, D. Araújo, C.E. Pastore, M. Gutierrez, C. Frigeri, A. Benali, J.F. Lelièvre, M. Gendry
Opublikowane w: Applied Surface Science, Numer 395, 2017, Strona(/y) 195-199, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2016.07.144

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Autorzy: J.C. Piñero, D. Araújo, A. Fiori, A. Traoré, M.P. Villar, D. Eon, P. Muret, J. Pernot, T. Teraji
Opublikowane w: Applied Surface Science, Numer 395, 2017, Strona(/y) 200-207, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2016.04.166

Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates

Autorzy: Fernando Lloret, Daniel Araujo, David Eon, María del Pilar Villar, Juan-María Gonzalez-Leal, Etienne Bustarret
Opublikowane w: physica status solidi (a), Numer 213/10, 2016, Strona(/y) 2570-2574, ISSN 1862-6300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201600182

Nanometric diamond delta doping with boron

Autorzy: James E. Butler, Anatoly Vikharev, Alexei Gorbachev, Mikhail Lobaev, Anatoly Muchnikov, Dmitry Radischev, Vladimir Isaev, Valerii Chernov, Sergey Bogdanov, Mikail Drozdov, Evgeniy Demidov, Ekaterina Surovegina, Vladimir Shashkin, Albert Davydov, Haiyan Tan, Louisa Meshi, Alexander C. Pakpour-Tabrizi, Marie-Laure Hicks, Richard B. Jackman
Opublikowane w: physica status solidi (RRL) - Rapid Research Letters, Numer 11/1, 2017, Strona(/y) 1600329, ISSN 1862-6254
Wydawca: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.201600329

Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

Autorzy: F. Lloret, A. Fiori, D. Araujo, D. Eon, M. P. Villar, E. Bustarret
Opublikowane w: Applied Physics Letters, Numer 108/18, 2016, Strona(/y) 181901, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.4948373

TEM study of defects versus growth orientations in heavily boron-doped diamond

Autorzy: F. Lloret, D. Araujo, M. P. Alegre, J. M. Gonzalez-Leal, M. P. Villar, D. Eon, E. Bustarret
Opublikowane w: physica status solidi (a), Numer 212/11, 2015, Strona(/y) 2468-2473, ISSN 1862-6300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201532175

Si NWs Conversion to Si-SiC Core-Shell NWs by MBE

Autorzy: Fernando Lloret, D. Araujo, M.P. Villar, L. Liu, Konstantinos Zekentes
Opublikowane w: Materials Science Forum, Numer 821-823, 2015, Strona(/y) 965-969, ISSN 1662-9752
Wydawca: Trans Tech Publications
DOI: 10.4028/www.scientific.net/MSF.821-823.965

Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality

Autorzy: J.C. Piñero, D. Araújo, A. Fiori, A. Traoré, M.P. Villar, D. Eon, P. Muret, J. Pernot, T. Teraji
Opublikowane w: Applied Surface Science, 2016, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2016.04.166

Potential barrier heights at metal on oxygen-terminated diamond interfaces

Autorzy: P. Muret, A. Traoré, A. Maréchal, D. Eon, J. Pernot, J. C. Pinẽro, M. P. Villar, D. Araujo
Opublikowane w: Journal of Applied Physics, Numer 118/20, 2015, Strona(/y) 204505, ISSN 0021-8979
Wydawca: American Institute of Physics
DOI: 10.1063/1.4936317

Optimal drift region for diamond power devices

Autorzy: Gauthier Chicot, David Eon, Nicolas Rouger
Opublikowane w: Diamond and Related Materials, Numer 69, 2016, Strona(/y) 68-73, ISSN 0925-9635
Wydawca: Elsevier BV
DOI: 10.1016/j.diamond.2016.07.006

Diamond Etching Beyond 10 μm with Near-Zero Micromasking

Autorzy: Marie-Laure Hicks, Alexander C. Pakpour-Tabrizi, Richard B. Jackman
Opublikowane w: Scientific Reports, Numer 9/1, 2019, ISSN 2045-2322
Wydawca: Nature Publishing Group
DOI: 10.1038/s41598-019-51970-8

Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

Autorzy: Rozita Rouzbahani, Shannon S. Nicley, Danny E.P. Vanpoucke, Fernando Lloret, Paulius Pobedinskas, Daniel Araujo, Ken Haenen
Opublikowane w: Carbon, Numer 172, 2021, Strona(/y) 463-473, ISSN 0008-6223
Wydawca: Pergamon Press Ltd.
DOI: 10.1016/j.carbon.2020.10.061

Oxygen termination of homoepitaxial diamond surface by ozone and chemical methods: An experimental and theoretical perspective

Autorzy: Javier Navas, Daniel Araujo, José Carlos Piñero, Antonio Sánchez-Coronilla, Eduardo Blanco, Pilar Villar, Rodrigo Alcántara, Josep Montserrat, Matthieu Florentin, David Eon, Julien Pernot
Opublikowane w: Applied Surface Science, Numer 433, 2018, Strona(/y) 408-418, ISSN 0169-4332
Wydawca: Elsevier BV
DOI: 10.1016/j.apsusc.2017.10.065

Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications

Autorzy: Thu Nhi Tran Thi, J. Morse, D. Caliste, B. Fernandez, D. Eon, J. Härtwig, C. Barbay, C. Mer-Calfati, N. Tranchant, J. C. Arnault, T. A. Lafford, J. Baruchel
Opublikowane w: Journal of Applied Crystallography, Numer 50/2, 2017, Strona(/y) 561-569, ISSN 1600-5767
Wydawca: International Union of Crystallography
DOI: 10.1107/s1600576717003831

2D hole gas mobility at diamond/insulator interface

Autorzy: G. Daligou, J. Pernot
Opublikowane w: Applied Physics Letters, Numer 116/16, 2020, Strona(/y) 162105, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/5.0002768

MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density

Autorzy: Fernando Lloret, Marina Gutierrez, Daniel Araujo, David Eon, Etienne Bustarret
Opublikowane w: physica status solidi (a), Numer 214/11, 2017, Strona(/y) 1700242, ISSN 1862-6300
Wydawca: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.201700242

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Autorzy: Nicolas Rouger; Florin Udrea; Giorgia Longobardi; Nazareno Donato; Julien Pernot; Julien Pernot
Opublikowane w: Journal of Physics D: Applied Physics, 2019, ISSN 0022-3727
Wydawca: Institute of Physics Publishing
DOI: 10.17863/cam.52722

Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth

Autorzy: Fernando Lloret, David Eon, Etienne Bustarret, Daniel Araujo
Opublikowane w: Nanomaterials, Numer 8/10, 2018, Strona(/y) 814, ISSN 2079-4991
Wydawca: MDPI
DOI: 10.3390/nano8100814

High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication

Autorzy: T. T. Pham, M. Gutiérrez, C. Masante, N. Rouger, D. Eon, E. Gheeraert, D. Araùjo, J. Pernot
Opublikowane w: Applied Physics Letters, Numer 112/10, 2018, Strona(/y) 102103, ISSN 0003-6951
Wydawca: American Institute of Physics
DOI: 10.1063/1.5018403

Integrated temperature sensor with diamond Schottky diodes using a thermosensitive parameter

Autorzy: Gaëtan Perez, Gauthier Chicot, Yvan Avenas, Pierre Lefranc, Pierre-Olivier Jeannin, David Eon, Nicolas Rouger
Opublikowane w: Diamond and Related Materials, Numer 78, 2017, Strona(/y) 83-87, ISSN 0925-9635
Wydawca: Elsevier BV
DOI: 10.1016/j.diamond.2017.08.008

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