4-Colours/2-Junctions of III-V semiconductors on Si to use in electronics devices and solar cells

Project Information

4SUNS

Grant agreement ID: 758885

DOI

10.3030/758885

EC signature date 27 October 2017

Start date 1 February 2018

End date 30 September 2026

Funded under

• EXCELLENT SCIENCE - European Research Council (ERC)

Total cost

€ 1 499 719,00

EU contribution

€ 1 499 719,00

Coordinated by

UNIVERSIDAD AUTONOMA DE MADRID
Spain

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Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Publications

Non-peer reviewed articles (2)

Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors

Author(s): Ben Saddik, K.; Braña, A. F.; López, N.; García, B. J.; Fernández-Garrido, S.; Electronics and Semiconductors Group (ElySe)
Published in: Journal of Crystal Growth, Issue 2, 2021, ISSN 0022-0248
Publisher: Elsevier BV
DOI: 10.1016/j.jcrysgro.2021.126242

Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy

Author(s): K. Ben Saddik; A.F. Braña; N. López; Wladek Walukiewicz; Wladek Walukiewicz; Basilio J. García; Basilio J. García
Published in: Journal of Applied Physics, Issue 1, 2019, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.5111090

Intellectual Property Rights

Patent (1)

SEMICONDUCTOR DEVICE

Application/Publication number: 20 1930783
Date: 2019-09-06
Applicant(s): UNIVERSIDAD AUTONOMA DE MADRID