Technology Advances for Pilotline of Enhanced Semiconductors for 3nm

Información del proyecto

TAPES3

Identificador del acuerdo de subvención: 783247

DOI 10.3030/783247

Proyecto cerrado

Fecha de la firma de la CE 17 Mayo 2018

Fecha de inicio 1 Octubre 2018

Fecha de finalización 31 Enero 2022

Financiado con arreglo a

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coste total € 121 116 315,26

Aportación de la UE € 28 192 938,27

Coordinado por

ASML NETHERLANDS B.V.
Netherlands

Publicaciones

Peer reviewed articles (4)

Perspectives and tradeoffs of absorber materials for high NA EUV lithography

Autores: Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer
Publicado en: Journal of Micro/Nanolithography, MEMS, and MOEMS, Edición 19/04, 2020, ISSN 1932-5150
Editor: S P I E - International Society for Optical Engineering
DOI: 10.1117/1.jmm.19.4.041001

Very-High Dynamic Range, 10,000 Frames/Second Pixel Array Detector for Electron Microscopy

Autores: Hugh T. Philipp, Mark W. Tate, Katherine S. Shanks, Luigi Mele, Maurice Peemen, Pleun Dona, Reinout Hartong, Gerard van Veen, Yu-Tsun Shao, Zhen Chen, Julia Thom-Levy, David A. Muller, Sol M. Gruner
Publicado en: Microscopy and Microanalysis, Edición Volume 28, Edición 2, March 2022, 2022, ISSN 1431-9276
Editor: Cambridge University Press
DOI: 10.1017/s1431927622000174

Dynamics of crosshatch patterns in heteroepitaxy

Autores: Fabrizio Rovaris, Marvin H. Zoellner, Peter Zaumseil, Anna Marzegalli, Luciana Di Gaspare, Monica De Seta, Thomas Schroeder, Peter Storck, Georg Schwalb, Giovanni Capellini, and Francesco Montalenti
Publicado en: PHYSICAL REVIEW B, Edición Phys. Rev. B 100, 085307, 2019, ISSN 2469-9969
Editor: American Physical Society
DOI: 10.1103/physrevb.100.085307

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Autores: L. Becker, P. Storck, T. Schulz, M. H. Zoellner, L. Di Gaspare, F. Rovaris, A. Marzegalli, F. Montalenti, M. De Seta, G. Capellini, G. Schwalb, T. Schroeder, M. Albrecht
Publicado en: Journal of Applied Physics, Edición Journal of Applied Physics 128, 215305 (2020), 2020, ISSN 0021-8979
Editor: American Institute of Physics
DOI: 10.1063/5.0032454

Conference proceedings (19)

SALELE process from theory to fabrication

Autores: Youssef Drissi, Werner Gillijns, Jae Uk Lee, Ryan Ryoung han Kim, Ahmed Hamed Fatehy, Rehab K. Ali, Rajiv Sejpal, Germain Fenger, James Word
Publicado en: Design-Process-Technology Co-optimization for Manufacturability XIII, 2019, Página(s) 30, ISBN 9781510625723
Editor: SPIE
DOI: 10.1117/12.2517051

Multi-patterning strategies for navigating the sub-5 nm frontier, part 2

Autores: Jae Uk Lee, Ryoung-han Kim, David Abercrombie, Rehab Kotb Ali, Ahmed Hamed-Fatehy
Publicado en: 2019
Editor: EDN Network

Study of EUV reticle storage effects through exposure on EBL2 and NXE

Autores: Rik Jonckheere, Chien-Ching Wu, Veronique de Rooij-Lohmann, Dorus Elstgeest, Henk Lensen, Philipp Hoenicke, Michael Kolbe, Victor Soltwisch, Claudia Zech, Frank Scholze, Remko Aubert, Vineet Vijayakrishnan Nair, Eric Hendrickx
Publicado en: Extreme Ultraviolet Lithography 2020, 2020, Página(s) 28, ISBN 9781510638433
Editor: SPIE
DOI: 10.1117/12.2573125

Better prediction on patterning failure mode with hotspot aware OPC modeling

Autores: Chih-I Wei, Stewart Wu, Yunfei Deng, Gurdaman Khaira, Ir Kusnadi, Germain Fenger, Seulki Kang, Yosuke Okamoto, Kotaro Maruyama, Yuichiro Yamazaki, Sayantan Das, Sandip Halder, Werner Gillijns, Gian Lorusso
Publicado en: Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 2021, Página(s) 32, ISBN 9781510640566
Editor: SPIE
DOI: 10.1117/12.2583837

Additional real-time diagnostics on the EBL2 EUV exposure facility

Autores: Peter van der Walle, Jetske K. Stortelder, Chien-Ching Wu, Henk Lensen, Norbert B. Koster
Publicado en: Extreme Ultraviolet (EUV) Lithography XI, 2020, Página(s) 66, ISBN 9781510634145
Editor: SPIE
DOI: 10.1117/12.2552011

Optical design of EUV attenuated PSM for contact-hole applications

Autores: Chang-Nam Ahn, Dong-Seok Nam, Nakgeuon Seong, Anthony Yen
Publicado en: SPIE Advanced Lithography, Edición Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090D (2021), 2021
Editor: SPIE
DOI: 10.1117/12.2583462

Exploring patterning limit and enhancement techniques to improve printability of 2D shapes at 3nm node

Autores: Rehab Kotb Ali, Ahmed Hamed Fatehy, James Word
Publicado en: Design-Process-Technology Co-optimization for Manufacturability XIV, 2020, Página(s) 33, ISBN 9781510634244
Editor: SPIE
DOI: 10.1117/12.2552091

Multi-patterning strategies for navigating the sub-5 nm frontier, part 1

Autores: Jae Uk Lee, Ryoung-han Kim, David Abercrombie, Rehab Kotb Ali, Ahmed Hamed-Fatehy
Publicado en: 2019
Editor: EDN Network

Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula

Autores: Azat Latypov, Gurdaman Khaira, Germain L. Fenger, John L. Sturtevant, Chih-I Wei, Peter De Bisschop
Publicado en: Extreme Ultraviolet (EUV) Lithography XI, 2020, Página(s) 17, ISBN 9781510634145
Editor: SPIE
DOI: 10.1117/12.2551965

Investigation into a prototype EUV attenuated phase-shift mask

Autores: Claire van Lare, Frank Timmermans, Jo Finders, Olena Romanets, Cheuk-Wah Man, Paul van Adrichem, Yohei Ikebe, Takeshi Aizawa, Takahiro Onoue
Publicado en: SPIE Advanced Lithography, Edición Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090A (2021), 2021
Editor: SPIE
DOI: 10.1117/12.2584725

Mask absorber for next generation EUV lithography

Autores: Meiyi Wu, Devesh Thakare, Jean-François de Marneffe, Patrick Jaenen, Laurent Souriau, Karl Opsomer, Jean-Philippe Soulié, Andreas Erdmann, Hazem Mesilhy, Philipp Naujok, Markus Foltin, Victor Soltwisch, Qais Saadeh, Vicky Philipsen
Publicado en: Extreme Ultraviolet Lithography 2020, 2020, Página(s) 2, ISBN 9781510638433
Editor: SPIE
DOI: 10.1117/12.2572114

High-NA EUV lithography optics becomes reality

Autores: Lars Wischmeier, Paul Gräupner, Peter Kürz, Winfried Kaiser, Jan Van Schoot, Jörg Mallmann, Joost de Pee, Judon Stoeldraijer
Publicado en: Extreme Ultraviolet (EUV) Lithography XI, 2020, Página(s) 4, ISBN 9781510634145
Editor: SPIE
DOI: 10.1117/12.2543308

High-NA EUV Lithography Exposure Tool - Advantages and Program Progress

Autores: Jan van Schoot, Eelco van Setten, Ruben Maas, Kars Troost, Jo Finders, Sjoerd Lok, Rudy Peeters, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Winfried Kaiser
Publicado en: 2020
Editor: EUVL Workshop 2020

High-NA EUV Optics – The key for miniaturization of integrated circuits in the next decade

Autores: Heiko Feldmann, Paul Gräupner, Peter Kürz, Winfried Kaiser
Publicado en: 2019
Editor: ESSCIRC/ESSDERC 2019, Cracow, Poland

Realizing more accurate OPC models by utilizing SEM contours

Autores: Chih-I Wei, Rajiv Sejpal, Yunfei Deng, Ir Kusnadi, Germain Fenger, Masahiro Oya, Yosuke Okamoto, Kotaro Maruyama, Yuichiro Yamazaki, Sayantan Das, Sandip Halder, Werner Gillijns
Publicado en: Metrology, Inspection, and Process Control for Microlithography XXXIV, 2020, Página(s) 2, ISBN 9781510634183
Editor: SPIE
DOI: 10.1117/12.2554527

Characterization and Mitigation of 3D Mask Effects in Extreme Ultraviolet Lithography

Autores: ] Erdmann, A., Xu, D., Evanschitzky, P., Philipsen, V., Luong, V., Hendrickx, E.
Publicado en: 2017
Editor: Advanced Optical Technologies 6

High-NA EUV Lithography Exposure System - Advantages and Program Progress

Autores: Jan van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Winfried Kaiser
Publicado en: 2020
Editor: SPIE

Self-aligned block technology: a step toward further scaling

Autores: Frédéric Lazzarino, Nihar Mohanty, Yannick Feurprier, Lior Huli, Vinh Luong, Marc Demand, Stefan Decoster, Victor Vega Gonzalez, Julien Ryckaert, Ryan Ryoung Han Kim, Arindam Mallik, Philippe Leray, Chris Wilson, Jürgen Boemmels, Kaushik Kumar, Kathleen Nafus, Anton deVilliers, Jeffrey Smith, Carlos Fonseca, Julie Bannister, Steven Scheer, Zsolt Tokei, Daniele Piumi, Kathy Barla
Publicado en: Advanced Etch Technology for Nanopatterning VI, 2017, Página(s) 1014908
Editor: SPIE
DOI: 10.1117/12.2258028

First results of EUV-scanner compatibility tests performed on novel 'high-NA' reticle absorber materials

Autores: Jetske Stortelder, Robert P. Ebeling, Corné Rijnsent, Michel van Putten, Veronique de Rooij-Lohmann, Maximilian Smit, Arnold J. Storm, Norbert Koster, Henk A. Lensen, Vicky Philipsen, Karl Opsomer, Devesh Thakare, Torsten Feigl, Philipp Naujok
Publicado en: International Conference on Extreme Ultraviolet Lithography 2021, 2021, Página(s) 19, ISBN 9781510645530
Editor: SPIE
DOI: 10.1117/12.2600928

Other (9)

Techniques for SAMP cut/block mask design decomposition

Autores: BY JAE UK LEE, RYOUNG HAN KIM, DAVID ABERCROMBIE, AND REHAB KOTB ALI
Publicado en: 2021
Editor: EDN.com

Progress in High NA EUV Optics Development of sub-10nm resolution

Autores: Lars Wischmeier
Publicado en: 2020
Editor: ESSCIRC/ESSDERC 2020, Dresden, Germany

High NA EUV optics: preparing lithography for the next big step

Autores: Paul Graeupner
Publicado en: 2021
Editor: ESSCIRC/ESSDERC 2021, Grenoble, France

Multi-patterning strategies for navigating the sub-5 nm frontier, part 3

Autores: Jae Uk Lee, Ryoung-han Kim, David Abercrombie, Rehab Kotb Ali, Ahmed Hamed-Fatehy
Publicado en: 2020
Editor: EDN.com

Comparing multi-patterning at 5nm: SADP, SAQP, and SALELE

Autores: Jae Uk Lee, Apoorva Oak, Ryoung Han Kim, David Abercrombie, Rehab Kotb Ali, Ahmed Hamed-Fatehy
Publicado en: 2019
Editor: Siemens

High-NA EUV Optics –the Key for Miniaturizationof Integrated Circuitsin the Next Decade

Autores: Bartosz Bilski, Heiko Feldmann, Paul Gräupner, Peter Kürz, Winfried Kaiser
Publicado en: 2019
Editor: ESSCIRC/ESSDERC 2019, Cracow, Poland

VLSI Keynote: EUVL - Optics: Status and Future Perspectives

Autores: Winfried Kaiser
Publicado en: 2019
Editor: VLSI-TSA 2019

Optics for EUV Lithography

Autores: Sascha Migura
Publicado en: 2019
Editor: EUVL Workshop

Self-aligned multi-patterning Track decomposition techniques

Autores: Jae Uk Lee, David Abercrombie, Rehab Kotb Ali
Publicado en: 2020
Editor: Siemens

Non-peer reviewed articles (4)

Mask absorber development to enable next-generation EUVL

Autores: Philipsen, V., Luong, K.V., Opsomer, K., Souriau, L., Rip, J., Detavernier, C., Erdmann, A., Evanschitzky, P., Laubis, C., Hönicke, Ph., Soltwisch, V., Hendrickx, E.
Publicado en: SPIE DIGITAL LIBRARY, 2019
Editor: SPIE

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab

Autores: Jerome Mitard, Luka Kljucar, Nouredine Rassoul, Harold F. W. Dekkers, Michiel van Setten, Adrian Chasin, Geoffrey Pourtois, Attilio Belmonte, Romain Delhougne, Gabriele Luca Donadio, Ludovic Goux, Manoj Nag, Chris Wilson, Zsolt Tokei, Jose Ignacio del agua Borniquel, Soeren Steudel and Gouri Sankar Kar
Publicado en: ECS Transactions, Edición 98 (7), 2020, Página(s) 205-217
Editor: The Electrochemical Society

Implementation of different cost functions for EUV mask optimization for next generation beyond 7nm

Autores: Fan Jiang, Alexander Tritchkov, Alex Wei, Srividya Jayaram, Yuyang Sun, Xima Zhang, and James Word
Publicado en: SPIE DIGITAL LIBRARY, 2019
Editor: SPIE

Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

Autores: Philipsen, V., Luong, K.V., Souriau, L., Erdmann, A., Evanschitzky, P., van de Kruijs, R.W. E., Edrisi, A., Scholze, F., Laubis, C., Irmscher, M., Naasz, S., Reuter, C., Hendrickx, E.
Publicado en: Journal of Micro/Nanolithography MEMS and MOEMS 16, 2017
Editor: Journal of Micro/Nanolithography MEMS and MOEMS 16

Derechos de propiedad intelectual

Patent (7)

SCHWINGUNGSTILGER, OPTISCHES SYSTEM UND LITHOGRAPHIEANLAGE

Número de solicitud/publicación: 10 2020201041
Fecha: 2020-01-29
Solicitante(s): CARL ZEISS SMT GMBH

METHOD AND LITHOGRAPH APPARATUS FOR MEASURING A RADIATION BEAM

Número de solicitud/publicación: 20 20052250
Fecha: 2020-01-30

GAS MIXING FOR FAST TEMPERATURE CONTROL OF A COOLING HOOD

Número de solicitud/publicación: 20 19076001
Fecha: 2019-09-26

Verfahren zur Korrektur einer Baugruppe einer Mikrolithographieanlage

Número de solicitud/publicación: 10 2019215990
Fecha: 2019-10-17
Solicitante(s): CARL ZEISS SMT GMBH

A LITHOGRAPHIC APPARATUS AND COOLING APPARATUS

Número de solicitud/publicación: 20 19063706
Fecha: 2019-05-28

RADIATION FILTER FOR A RADIATION SENSOR

Número de solicitud/publicación: 20 19075125
Fecha: 2019-09-19

SYSTEM AND METHOD FOR SIMULTANEOUS PHASE CONTRAST IMAGING AND ELECTRON ENERGY-LOSS SPECTROSCOPY

Número de solicitud/publicación: 21 192493
Fecha: 2021-08-23
Solicitante(s): FEI ELECTRON OPTICS BV