Technology Advances for Pilotline of Enhanced Semiconductors for 3nm

Pubblicazioni

Perspectives and tradeoffs of absorber materials for high NA EUV lithography

Autori: Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer
Pubblicato in: Journal of Micro/Nanolithography, MEMS, and MOEMS, Numero 19/04, 2020, ISSN 1932-5150
Editore: S P I E - International Society for Optical Engineering
DOI: 10.1117/1.jmm.19.4.041001

Very-High Dynamic Range, 10,000 Frames/Second Pixel Array Detector for Electron Microscopy

Autori: Hugh T. Philipp, Mark W. Tate, Katherine S. Shanks, Luigi Mele, Maurice Peemen, Pleun Dona, Reinout Hartong, Gerard van Veen, Yu-Tsun Shao, Zhen Chen, Julia Thom-Levy, David A. Muller, Sol M. Gruner
Pubblicato in: Microscopy and Microanalysis, Numero Volume 28, Numero 2, March 2022, 2022, ISSN 1431-9276
Editore: Cambridge University Press
DOI: 10.1017/s1431927622000174

Dynamics of crosshatch patterns in heteroepitaxy

Autori: Fabrizio Rovaris, Marvin H. Zoellner, Peter Zaumseil, Anna Marzegalli, Luciana Di Gaspare, Monica De Seta, Thomas Schroeder, Peter Storck, Georg Schwalb, Giovanni Capellini, and Francesco Montalenti
Pubblicato in: PHYSICAL REVIEW B, Numero Phys. Rev. B 100, 085307, 2019, ISSN 2469-9969
Editore: American Physical Society
DOI: 10.1103/physrevb.100.085307

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Autori: L. Becker, P. Storck, T. Schulz, M. H. Zoellner, L. Di Gaspare, F. Rovaris, A. Marzegalli, F. Montalenti, M. De Seta, G. Capellini, G. Schwalb, T. Schroeder, M. Albrecht
Pubblicato in: Journal of Applied Physics, Numero Journal of Applied Physics 128, 215305 (2020), 2020, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/5.0032454

SALELE process from theory to fabrication

Autori: Youssef Drissi, Werner Gillijns, Jae Uk Lee, Ryan Ryoung han Kim, Ahmed Hamed Fatehy, Rehab K. Ali, Rajiv Sejpal, Germain Fenger, James Word
Pubblicato in: Design-Process-Technology Co-optimization for Manufacturability XIII, 2019, Pagina/e 30, ISBN 9781510625723
Editore: SPIE
DOI: 10.1117/12.2517051

Multi-patterning strategies for navigating the sub-5 nm frontier, part 2

Autori: Jae Uk Lee, Ryoung-han Kim, David Abercrombie, Rehab Kotb Ali, Ahmed Hamed-Fatehy
Pubblicato in: 2019
Editore: EDN Network

Study of EUV reticle storage effects through exposure on EBL2 and NXE

Autori: Rik Jonckheere, Chien-Ching Wu, Veronique de Rooij-Lohmann, Dorus Elstgeest, Henk Lensen, Philipp Hoenicke, Michael Kolbe, Victor Soltwisch, Claudia Zech, Frank Scholze, Remko Aubert, Vineet Vijayakrishnan Nair, Eric Hendrickx
Pubblicato in: Extreme Ultraviolet Lithography 2020, 2020, Pagina/e 28, ISBN 9781510638433
Editore: SPIE
DOI: 10.1117/12.2573125

Better prediction on patterning failure mode with hotspot aware OPC modeling

Autori: Chih-I Wei, Stewart Wu, Yunfei Deng, Gurdaman Khaira, Ir Kusnadi, Germain Fenger, Seulki Kang, Yosuke Okamoto, Kotaro Maruyama, Yuichiro Yamazaki, Sayantan Das, Sandip Halder, Werner Gillijns, Gian Lorusso
Pubblicato in: Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, 2021, Pagina/e 32, ISBN 9781510640566
Editore: SPIE
DOI: 10.1117/12.2583837

Additional real-time diagnostics on the EBL2 EUV exposure facility

Autori: Peter van der Walle, Jetske K. Stortelder, Chien-Ching Wu, Henk Lensen, Norbert B. Koster
Pubblicato in: Extreme Ultraviolet (EUV) Lithography XI, 2020, Pagina/e 66, ISBN 9781510634145
Editore: SPIE
DOI: 10.1117/12.2552011

Optical design of EUV attenuated PSM for contact-hole applications

Autori: Chang-Nam Ahn, Dong-Seok Nam, Nakgeuon Seong, Anthony Yen
Pubblicato in: SPIE Advanced Lithography, Numero Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090D (2021), 2021
Editore: SPIE
DOI: 10.1117/12.2583462

Exploring patterning limit and enhancement techniques to improve printability of 2D shapes at 3nm node

Autori: Rehab Kotb Ali, Ahmed Hamed Fatehy, James Word
Pubblicato in: Design-Process-Technology Co-optimization for Manufacturability XIV, 2020, Pagina/e 33, ISBN 9781510634244
Editore: SPIE
DOI: 10.1117/12.2552091

Multi-patterning strategies for navigating the sub-5 nm frontier, part 1

Autori: Jae Uk Lee, Ryoung-han Kim, David Abercrombie, Rehab Kotb Ali, Ahmed Hamed-Fatehy
Pubblicato in: 2019
Editore: EDN Network

Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula

Autori: Azat Latypov, Gurdaman Khaira, Germain L. Fenger, John L. Sturtevant, Chih-I Wei, Peter De Bisschop
Pubblicato in: Extreme Ultraviolet (EUV) Lithography XI, 2020, Pagina/e 17, ISBN 9781510634145
Editore: SPIE
DOI: 10.1117/12.2551965

Investigation into a prototype EUV attenuated phase-shift mask

Autori: Claire van Lare, Frank Timmermans, Jo Finders, Olena Romanets, Cheuk-Wah Man, Paul van Adrichem, Yohei Ikebe, Takeshi Aizawa, Takahiro Onoue
Pubblicato in: SPIE Advanced Lithography, Numero Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116090A (2021), 2021
Editore: SPIE
DOI: 10.1117/12.2584725

Mask absorber for next generation EUV lithography

Autori: Meiyi Wu, Devesh Thakare, Jean-François de Marneffe, Patrick Jaenen, Laurent Souriau, Karl Opsomer, Jean-Philippe Soulié, Andreas Erdmann, Hazem Mesilhy, Philipp Naujok, Markus Foltin, Victor Soltwisch, Qais Saadeh, Vicky Philipsen
Pubblicato in: Extreme Ultraviolet Lithography 2020, 2020, Pagina/e 2, ISBN 9781510638433
Editore: SPIE
DOI: 10.1117/12.2572114

High-NA EUV lithography optics becomes reality

Autori: Lars Wischmeier, Paul Gräupner, Peter Kürz, Winfried Kaiser, Jan Van Schoot, Jörg Mallmann, Joost de Pee, Judon Stoeldraijer
Pubblicato in: Extreme Ultraviolet (EUV) Lithography XI, 2020, Pagina/e 4, ISBN 9781510634145
Editore: SPIE
DOI: 10.1117/12.2543308

High-NA EUV Lithography Exposure Tool - Advantages and Program Progress

Autori: Jan van Schoot, Eelco van Setten, Ruben Maas, Kars Troost, Jo Finders, Sjoerd Lok, Rudy Peeters, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Winfried Kaiser
Pubblicato in: 2020
Editore: EUVL Workshop 2020

High-NA EUV Optics – The key for miniaturization of integrated circuits in the next decade

Autori: Heiko Feldmann, Paul Gräupner, Peter Kürz, Winfried Kaiser
Pubblicato in: 2019
Editore: ESSCIRC/ESSDERC 2019, Cracow, Poland

Realizing more accurate OPC models by utilizing SEM contours

Autori: Chih-I Wei, Rajiv Sejpal, Yunfei Deng, Ir Kusnadi, Germain Fenger, Masahiro Oya, Yosuke Okamoto, Kotaro Maruyama, Yuichiro Yamazaki, Sayantan Das, Sandip Halder, Werner Gillijns
Pubblicato in: Metrology, Inspection, and Process Control for Microlithography XXXIV, 2020, Pagina/e 2, ISBN 9781510634183
Editore: SPIE
DOI: 10.1117/12.2554527

Characterization and Mitigation of 3D Mask Effects in Extreme Ultraviolet Lithography

Autori: ] Erdmann, A., Xu, D., Evanschitzky, P., Philipsen, V., Luong, V., Hendrickx, E.
Pubblicato in: 2017
Editore: Advanced Optical Technologies 6

High-NA EUV Lithography Exposure System - Advantages and Program Progress

Autori: Jan van Schoot, Sjoerd Lok, Eelco van Setten, Ruben Maas, Kars Troost, Rudy Peeters, Jo Finders, Judon Stoeldraijer, Jos Benschop, Paul Graeupner, Peter Kuerz, Winfried Kaiser
Pubblicato in: 2020
Editore: SPIE

Self-aligned block technology: a step toward further scaling

Autori: Frédéric Lazzarino, Nihar Mohanty, Yannick Feurprier, Lior Huli, Vinh Luong, Marc Demand, Stefan Decoster, Victor Vega Gonzalez, Julien Ryckaert, Ryan Ryoung Han Kim, Arindam Mallik, Philippe Leray, Chris Wilson, Jürgen Boemmels, Kaushik Kumar, Kathleen Nafus, Anton deVilliers, Jeffrey Smith, Carlos Fonseca, Julie Bannister, Steven Scheer, Zsolt Tokei, Daniele Piumi, Kathy Barla
Pubblicato in: Advanced Etch Technology for Nanopatterning VI, 2017, Pagina/e 1014908
Editore: SPIE
DOI: 10.1117/12.2258028

First results of EUV-scanner compatibility tests performed on novel 'high-NA' reticle absorber materials

Autori: Jetske Stortelder, Robert P. Ebeling, Corné Rijnsent, Michel van Putten, Veronique de Rooij-Lohmann, Maximilian Smit, Arnold J. Storm, Norbert Koster, Henk A. Lensen, Vicky Philipsen, Karl Opsomer, Devesh Thakare, Torsten Feigl, Philipp Naujok
Pubblicato in: International Conference on Extreme Ultraviolet Lithography 2021, 2021, Pagina/e 19, ISBN 9781510645530
Editore: SPIE
DOI: 10.1117/12.2600928

Techniques for SAMP cut/block mask design decomposition

Autori: BY JAE UK LEE, RYOUNG HAN KIM, DAVID ABERCROMBIE, AND REHAB KOTB ALI
Pubblicato in: 2021
Editore: EDN.com

Progress in High NA EUV Optics Development of sub-10nm resolution

Autori: Lars Wischmeier
Pubblicato in: 2020
Editore: ESSCIRC/ESSDERC 2020, Dresden, Germany

High NA EUV optics: preparing lithography for the next big step

Autori: Paul Graeupner
Pubblicato in: 2021
Editore: ESSCIRC/ESSDERC 2021, Grenoble, France

Multi-patterning strategies for navigating the sub-5 nm frontier, part 3

Autori: Jae Uk Lee, Ryoung-han Kim, David Abercrombie, Rehab Kotb Ali, Ahmed Hamed-Fatehy
Pubblicato in: 2020
Editore: EDN.com

Comparing multi-patterning at 5nm: SADP, SAQP, and SALELE

Autori: Jae Uk Lee, Apoorva Oak, Ryoung Han Kim, David Abercrombie, Rehab Kotb Ali, Ahmed Hamed-Fatehy
Pubblicato in: 2019
Editore: Siemens

High-NA EUV Optics –the Key for Miniaturizationof Integrated Circuitsin the Next Decade

Autori: Bartosz Bilski, Heiko Feldmann, Paul Gräupner, Peter Kürz, Winfried Kaiser
Pubblicato in: 2019
Editore: ESSCIRC/ESSDERC 2019, Cracow, Poland

VLSI Keynote: EUVL - Optics: Status and Future Perspectives

Autori: Winfried Kaiser
Pubblicato in: 2019
Editore: VLSI-TSA 2019

Optics for EUV Lithography

Autori: Sascha Migura
Pubblicato in: 2019
Editore: EUVL Workshop

Self-aligned multi-patterning Track decomposition techniques

Autori: Jae Uk Lee, David Abercrombie, Rehab Kotb Ali
Pubblicato in: 2020
Editore: Siemens

Mask absorber development to enable next-generation EUVL

Autori: Philipsen, V., Luong, K.V., Opsomer, K., Souriau, L., Rip, J., Detavernier, C., Erdmann, A., Evanschitzky, P., Laubis, C., Hönicke, Ph., Soltwisch, V., Hendrickx, E.
Pubblicato in: SPIE DIGITAL LIBRARY, 2019
Editore: SPIE

Sub-40mV Sigma-VTH IGZO nFETs in 300mm Fab

Autori: Jerome Mitard, Luka Kljucar, Nouredine Rassoul, Harold F. W. Dekkers, Michiel van Setten, Adrian Chasin, Geoffrey Pourtois, Attilio Belmonte, Romain Delhougne, Gabriele Luca Donadio, Ludovic Goux, Manoj Nag, Chris Wilson, Zsolt Tokei, Jose Ignacio del agua Borniquel, Soeren Steudel and Gouri Sankar Kar
Pubblicato in: ECS Transactions, Numero 98 (7), 2020, Pagina/e 205-217
Editore: The Electrochemical Society

Implementation of different cost functions for EUV mask optimization for next generation beyond 7nm

Autori: Fan Jiang, Alexander Tritchkov, Alex Wei, Srividya Jayaram, Yuyang Sun, Xima Zhang, and James Word
Pubblicato in: SPIE DIGITAL LIBRARY, 2019
Editore: SPIE

Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

Autori: Philipsen, V., Luong, K.V., Souriau, L., Erdmann, A., Evanschitzky, P., van de Kruijs, R.W. E., Edrisi, A., Scholze, F., Laubis, C., Irmscher, M., Naasz, S., Reuter, C., Hendrickx, E.
Pubblicato in: Journal of Micro/Nanolithography MEMS and MOEMS 16, 2017
Editore: Journal of Micro/Nanolithography MEMS and MOEMS 16

Diritti di proprietà intellettuale

SCHWINGUNGSTILGER, OPTISCHES SYSTEM UND LITHOGRAPHIEANLAGE

Numero candidatura/pubblicazione: 10 2020201041
Data: 2020-01-29
Candidato/i: CARL ZEISS SMT GMBH

METHOD AND LITHOGRAPH APPARATUS FOR MEASURING A RADIATION BEAM

Numero candidatura/pubblicazione: 20 20052250
Data: 2020-01-30

GAS MIXING FOR FAST TEMPERATURE CONTROL OF A COOLING HOOD

Numero candidatura/pubblicazione: 20 19076001
Data: 2019-09-26

Verfahren zur Korrektur einer Baugruppe einer Mikrolithographieanlage

Numero candidatura/pubblicazione: 10 2019215990
Data: 2019-10-17
Candidato/i: CARL ZEISS SMT GMBH

A LITHOGRAPHIC APPARATUS AND COOLING APPARATUS

Numero candidatura/pubblicazione: 20 19063706
Data: 2019-05-28

RADIATION FILTER FOR A RADIATION SENSOR

Numero candidatura/pubblicazione: 20 19075125
Data: 2019-09-19

SYSTEM AND METHOD FOR SIMULTANEOUS PHASE CONTRAST IMAGING AND ELECTRON ENERGY-LOSS SPECTROSCOPY

Numero candidatura/pubblicazione: 21 192493
Data: 2021-08-23
Candidato/i: FEI ELECTRON OPTICS BV

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