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Next Generation GaN Power Amplifiers

Deliverables

Final (Public) Report

Final (Public) Report

Improved Documentation; Guidelines and Best Practices

Improved Documentation; Guidelines and Best Practices

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Publications

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Author(s): Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, Farid Medjdoub, Johanna Rosen, Olof Kordina, Lars Hultman
Published in: Applied Physics Letters, 115/22, 2019, Page(s) 221601, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5123374