Next Generation GaN Power Amplifiers

Project Information

CoolHEMT

Grant agreement ID: 823260

DOI

10.3030/823260

Project closed

EC signature date 27 September 2018

Start date 1 September 2018

End date 28 February 2021

Funded under

• INDUSTRIAL LEADERSHIP - Innovation In SMEs

Total cost

€ 2 354 562,50

EU contribution

€ 1 648 193,75

Coordinated by

SWEGAN AB
Sweden

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Links to deliverables and publications from FP7 projects, as well as links to some specific result types such as dataset and software, are dynamically retrieved from OpenAIRE .

Deliverables

Documents, reports (2)

Final (Public) Report
Improved Documentation; Guidelines and Best Practices

Websites, patent fillings, videos etc. (1)

External project website

Publications

Peer reviewed articles (1)

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

Author(s): Jun Lu, Jr-Tai Chen, Martin Dahlqvist, Riad Kabouche, Farid Medjdoub, Johanna Rosen, Olof Kordina, Lars Hultman
Published in: Applied Physics Letters, Issue 115/22, 2019, Page(s) 221601, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/1.5123374

Intellectual Property Rights

Trademark (1)

QuanFINE

Application/Publication number: 017968878 017968878
Date: 2018-10-16
Applicant(s): SWEGAN AB