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Next generation of memory for the age of IoT

Project description

New technology for future IoT devices

Beyond the laptop and smartphones, there are billions of devices that are connected to the internet, such as a smart refrigerator that can create grocery lists. At the heart of any IoT device is a microcontroller (MCU), which has logic transistors for processing data and embedded non-volatile memory (eNVM) for storing data. Most MCUs are manufactured at 40 nm nodes or above. Smaller technology nodes, like 28 nm, promise lower power and lower cost, which is critical for IoT adoption. In this context, the EU-funded IoTMemory project will search for a solution – a new eNVM technology. Specifically, researchers will carve out a clear path to eNVM cells even at the 7 nm node – the most advanced technology node available today.

Call for proposal

H2020-EIC-SMEInst-2018-2020

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Sub call

H2020-SMEInst-2018-2020-1

Coordinator

FERROELECTRIC MEMORY GMBH
Net EU contribution
€ 50 000,00
Address
Charlotte-buhler-str. 12
01099 Dresden
Germany

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Region
Sachsen Dresden Dresden, Kreisfreie Stadt
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Other funding
€ 50 000,00