Deliverables Documents, reports (10) Initial benchmarking towards evolving wideband communication and sensing Initial benchmarking towards evolving wideband communication and sensing Report on first version of device compact models for LF and RF circuit simulation Report on first version of device compact models for LF and RF circuit simulation First report on interface dielectric trap and RF (S parameter and NF) characterization of devices operated at cryogenic condition First report on interface dielectric trap and RF (S parameter and NF) characterization of devices operated at cryogenic condition Web site launch Web site launch Road map for integrated and improved quantum computer electronics Road map for integrated and improved quantum computer electronics Review of key building blocks for cryogenic logic and space, 40-70 K, as well as wideband communication, RT Review of key building blocks for cryogenic logic and space, 40-70 K, as well as wideband communication, RT First report on electrical characterization and parameter extraction of devices operated at cryogenic condition First report on electrical characterization and parameter extraction of devices operated at cryogenic condition External Communication Plan External Communication Plan Dissemination Plan Dissemination Plan Initial report on circuit design with layouts and simulated performance Initial report on circuit design with layouts and simulated performance Publications Peer reviewed articles (17) On the diffusion current in a MOSFET operated down to deep cryogenic temperatures Author(s): G. Ghibaudo, M. Aouad, M. Casse, T. Poiroux, C. Theodorou Published in: Solid-State Electronics, Issue 176, 2021, Page(s) 107949, ISSN 0038-1101 Publisher: Pergamon Press Ltd. DOI: 10.1016/j.sse.2020.107949 Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications Author(s): Bruna Cardoso Paz, Mikael Casse, Christoforos Theodorou, Gerard Ghibaudo, Thorsten Kammler, Luca Pirro, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard Published in: IEEE Transactions on Electron Devices, Issue 67/11, 2020, Page(s) 4563-4567, ISSN 0018-9383 Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/ted.2020.3021999 First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth Author(s): Fabian Thome, Arnulf Leuther Published in: IEEE Journal of Solid-State Circuits, 2021, Page(s) 1-1, ISSN 0018-9200 Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/jssc.2021.3052952 Optimization of Near‐Surface Quantum Well Processing Author(s): Patrik Olausson, Lasse Södergren, Mattias Borg, Erik Lind Published in: physica status solidi (a), Issue 218/7, 2021, Page(s) 2000720, ISSN 1862-6300 Publisher: Wiley - V C H Verlag GmbbH & Co. DOI: 10.1002/pssa.202000720 Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs Author(s): Abinaya Krishnaraja, Johannes Svensson, Elvedin Memisevic, Zhongyunshen Zhu, Axel R. Persson, Erik Lind, Lars Reine Wallenberg, Lars-Erik Wernersson Published in: ACS Applied Electronic Materials, Issue 2/9, 2020, Page(s) 2882-2887, ISSN 2637-6113 Publisher: ACS DOI: 10.1021/acsaelm.0c00521 Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K Author(s): Mikaël Cassé, Bruna Cardoso Paz, Gérard Ghibaudo, Thierry Poiroux, Emmanuel Vincent, Philippe Galy, André Juge, Fred Gaillard, Silvano de Franceschi, Tristan Meunier, Maud Vinet Published in: Applied Physics Letters, Issue 116/24, 2020, Page(s) 243502, ISSN 0003-6951 Publisher: American Institute of Physics DOI: 10.1063/5.0007100 Simulation of low-noise amplifier with quantized ballistic nanowire channel Author(s): Christian Marty, Clarissa Convertino, Cezar Zota Published in: Semiconductor Science and Technology, Issue 35/11, 2020, Page(s) 115027, ISSN 0268-1242 Publisher: Institute of Physics Publishing DOI: 10.1088/1361-6641/abb841 The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems Author(s): Enrico Caruso, Jun Lin, Scott Monaghan, Karim Cherkaoui, Farzan Gity, Pierpaolo Palestri, David Esseni, Luca Selmi, Paul K. Hurley Published in: IEEE Transactions on Electron Devices, Issue 67/10, 2020, Page(s) 4372-4378, ISSN 0018-9383 Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/ted.2020.3018095 A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon Author(s): Clarissa Convertino, Cezar B. Zota, Heinz Schmid, Daniele Caimi, Lukas Czornomaz, Adrian M. Ionescu, Kirsten E. Moselund Published in: Nature Electronics, Issue 4/2, 2021, Page(s) 162-170, ISSN 2520-1131 Publisher: Nature DOI: 10.1038/s41928-020-00531-3 InGaAs MOSHEMT W -Band LNAs on Silicon and Gallium Arsenide Substrates Author(s): Fabian Thome, Felix Heinz, Arnulf Leuther Published in: IEEE Microwave and Wireless Components Letters, Issue 30/11, 2020, Page(s) 1089-1092, ISSN 1531-1309 Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/lmwc.2020.3025674 III-V-on-Si transistor technologies: Performance boosters and integration Author(s): D. Caimi, H. Schmid, T. Morf, P. Mueller, M. Sousa, K.E. Moselund, C.B. Zota Published in: Solid-State Electronics, Issue 185, 2021, Page(s) 108077, ISSN 0038-1101 Publisher: Pergamon Press Ltd. DOI: 10.1016/j.sse.2021.108077 Scaled III-V-on-Si Transistors for Low-Power Logic and Memory Applications Author(s): Daniele Caimi, Marilyne Sousa, Siegfried Karg and Cezar B. Zota Published in: Japanese Journal of Applied Physics, Issue 60/SB, 2021, Page(s) SB0801, ISSN 0021-4922 Publisher: IOP Science DOI: 10.35848/1347-4065/abd707 Generalized Boltzmann relations in semiconductors including band tails Author(s): Arnout Beckers, Dominique Beckers, Farzan Jazaeri, Bertrand Parvais, Christian Enz Published in: Journal of Applied Physics, Issue 129/4, 2021, Page(s) 045701, ISSN 0021-8979 Publisher: American Institute of Physics DOI: 10.1063/5.0037432 Mobility of near surface MOVPE grown InGaAs/InP quantum wells Author(s): Lasse Södergren, Navya Sri Garigapati, Mattias Borg, Erik Lind Published in: Applied Physics Letters, Issue 117/1, 2020, Page(s) 013102, ISSN 0003-6951 Publisher: American Institute of Physics DOI: 10.1063/5.0006530 Heterogeneous Integration of III-V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics Author(s): Daniele Caimi, Preksha Tiwari, Marilyne Sousa, Kirsten E. Moselund, Cezar B. Zota Published in: IEEE Transactions on Electron Devices, 2021, Page(s) 1-8, ISSN 0018-9383 Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/ted.2021.3067273 Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design Author(s): Stefan Andric, Lars Ohlsson Fhager, Lars-Erik Wernersson Published in: IEEE Transactions on Nanotechnology, Issue 20, 2021, Page(s) 434-440, ISSN 1536-125X Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/tnano.2021.3080621 Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance Author(s): M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard Published in: IEEE Transactions on Electron Devices, Issue 67/11, 2020, Page(s) 4636-4640, ISSN 0018-9383 Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/ted.2020.3022607 Conference proceedings (6) Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation Author(s): Stefan Andrić, Lars Ohlsson-Fhager, Lars-Erik Wernersson Published in: Issue 10-15 Jan. 2021, 2020 Publisher: IEEE Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application Author(s): M. Aouad, S. Martinie, F. Triozon, T. Poiroux, M. Vinet, G. Ghibaudo Published in: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, Page(s) 1-4, ISBN 978-1-7281-8765-5 Publisher: IEEE DOI: 10.1109/eurosoi-ulis49407.2020.9365297 Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving S min = 32 mV/dec and g m /I D = 100 V -1 Author(s): Abinaya Krishnaraja, Johannes Svensson, Lars-Erik Wernersson Published in: 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020, Page(s) 17-18, ISBN 978-1-7281-9735-7 Publisher: IEEE DOI: 10.1109/snw50361.2020.9131656 III-V Nanowire MOSFETs: RF-Properties and Applications Author(s): Lars-Erik Wernersson Published in: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020, Page(s) 1-4, ISBN 978-1-7281-9749-4 Publisher: IEEE DOI: 10.1109/bcicts48439.2020.9392932 Cryo-CMOS Compact Modeling Author(s): Christian Enz, Arnout Beckers, Farzan Jazaeri Published in: 2020 IEEE International Electron Devices Meeting (IEDM), 2020, Page(s) 25.3.1-25.3.4, ISBN 978-1-7281-8888-1 Publisher: IEEE DOI: 10.1109/iedm13553.2020.9371894 Ultra-Low Power Scaled III-V-on-Si 1T-DRAMs With Quantum Well Heterostructures Author(s): C. Convertino, L. Vergano, L. Czornomaz, C. B. Zota, S. Karg Published in: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, Page(s) 1-4, ISBN 978-1-7281-8765-5 Publisher: IEEE DOI: 10.1109/eurosoi-ulis49407.2020.9365288 Book chapters (1) Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications Author(s): Mikaël Cassé, Gérard Ghibaudo Published in: Low-Temperature Technologies [Working Title], 2021 Publisher: IntechOpen DOI: 10.5772/intechopen.98403 Searching for OpenAIRE data... There was an error trying to search data from OpenAIRE No results available
