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Cryogenic 3D Nanoelectronics

Deliverables

Publications

On the diffusion current in a MOSFET operated down to deep cryogenic temperatures

Author(s): G. Ghibaudo, M. Aouad, M. Casse, T. Poiroux, C. Theodorou
Published in: Solid-State Electronics, Issue 176, 2021, Page(s) 107949, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2020.107949

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Author(s): Bruna Cardoso Paz, Mikael Casse, Christoforos Theodorou, Gerard Ghibaudo, Thorsten Kammler, Luca Pirro, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Published in: IEEE Transactions on Electron Devices, Issue 67/11, 2020, Page(s) 4563-4567, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3021999

First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

Author(s): Fabian Thome, Arnulf Leuther
Published in: IEEE Journal of Solid-State Circuits, 2021, Page(s) 1-1, ISSN 0018-9200
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jssc.2021.3052952

Optimization of Near‐Surface Quantum Well Processing

Author(s): Patrik Olausson, Lasse Södergren, Mattias Borg, Erik Lind
Published in: physica status solidi (a), Issue 218/7, 2021, Page(s) 2000720, ISSN 1862-6300
Publisher: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202000720

Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

Author(s): Abinaya Krishnaraja, Johannes Svensson, Elvedin Memisevic, Zhongyunshen Zhu, Axel R. Persson, Erik Lind, Lars Reine Wallenberg, Lars-Erik Wernersson
Published in: ACS Applied Electronic Materials, Issue 2/9, 2020, Page(s) 2882-2887, ISSN 2637-6113
Publisher: ACS
DOI: 10.1021/acsaelm.0c00521

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Author(s): Mikaël Cassé, Bruna Cardoso Paz, Gérard Ghibaudo, Thierry Poiroux, Emmanuel Vincent, Philippe Galy, André Juge, Fred Gaillard, Silvano de Franceschi, Tristan Meunier, Maud Vinet
Published in: Applied Physics Letters, Issue 116/24, 2020, Page(s) 243502, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0007100

Simulation of low-noise amplifier with quantized ballistic nanowire channel

Author(s): Christian Marty, Clarissa Convertino, Cezar Zota
Published in: Semiconductor Science and Technology, Issue 35/11, 2020, Page(s) 115027, ISSN 0268-1242
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6641/abb841

The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems

Author(s): Enrico Caruso, Jun Lin, Scott Monaghan, Karim Cherkaoui, Farzan Gity, Pierpaolo Palestri, David Esseni, Luca Selmi, Paul K. Hurley
Published in: IEEE Transactions on Electron Devices, Issue 67/10, 2020, Page(s) 4372-4378, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3018095

A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

Author(s): Clarissa Convertino, Cezar B. Zota, Heinz Schmid, Daniele Caimi, Lukas Czornomaz, Adrian M. Ionescu, Kirsten E. Moselund
Published in: Nature Electronics, Issue 4/2, 2021, Page(s) 162-170, ISSN 2520-1131
Publisher: Nature
DOI: 10.1038/s41928-020-00531-3

InGaAs MOSHEMT W -Band LNAs on Silicon and Gallium Arsenide Substrates

Author(s): Fabian Thome, Felix Heinz, Arnulf Leuther
Published in: IEEE Microwave and Wireless Components Letters, Issue 30/11, 2020, Page(s) 1089-1092, ISSN 1531-1309
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2020.3025674

III-V-on-Si transistor technologies: Performance boosters and integration

Author(s): D. Caimi, H. Schmid, T. Morf, P. Mueller, M. Sousa, K.E. Moselund, C.B. Zota
Published in: Solid-State Electronics, Issue 185, 2021, Page(s) 108077, ISSN 0038-1101
Publisher: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108077

Scaled III-V-on-Si Transistors for Low-Power Logic and Memory Applications

Author(s): Daniele Caimi, Marilyne Sousa, Siegfried Karg and Cezar B. Zota
Published in: Japanese Journal of Applied Physics, Issue 60/SB, 2021, Page(s) SB0801, ISSN 0021-4922
Publisher: IOP Science
DOI: 10.35848/1347-4065/abd707

Generalized Boltzmann relations in semiconductors including band tails

Author(s): Arnout Beckers, Dominique Beckers, Farzan Jazaeri, Bertrand Parvais, Christian Enz
Published in: Journal of Applied Physics, Issue 129/4, 2021, Page(s) 045701, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/5.0037432

Mobility of near surface MOVPE grown InGaAs/InP quantum wells

Author(s): Lasse Södergren, Navya Sri Garigapati, Mattias Borg, Erik Lind
Published in: Applied Physics Letters, Issue 117/1, 2020, Page(s) 013102, ISSN 0003-6951
Publisher: American Institute of Physics
DOI: 10.1063/5.0006530

Heterogeneous Integration of III-V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

Author(s): Daniele Caimi, Preksha Tiwari, Marilyne Sousa, Kirsten E. Moselund, Cezar B. Zota
Published in: IEEE Transactions on Electron Devices, 2021, Page(s) 1-8, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2021.3067273

Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design

Author(s): Stefan Andric, Lars Ohlsson Fhager, Lars-Erik Wernersson
Published in: IEEE Transactions on Nanotechnology, Issue 20, 2021, Page(s) 434-440, ISSN 1536-125X
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tnano.2021.3080621

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

Author(s): M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard
Published in: IEEE Transactions on Electron Devices, Issue 67/11, 2020, Page(s) 4636-4640, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3022607

Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation

Author(s): Stefan Andrić, Lars Ohlsson-Fhager, Lars-Erik Wernersson
Published in: Issue 10-15 Jan. 2021, 2020
Publisher: IEEE

Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application

Author(s): M. Aouad, S. Martinie, F. Triozon, T. Poiroux, M. Vinet, G. Ghibaudo
Published in: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, Page(s) 1-4, ISBN 978-1-7281-8765-5
Publisher: IEEE
DOI: 10.1109/eurosoi-ulis49407.2020.9365297

Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving S min = 32 mV/dec and g m /I D = 100 V -1

Author(s): Abinaya Krishnaraja, Johannes Svensson, Lars-Erik Wernersson
Published in: 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020, Page(s) 17-18, ISBN 978-1-7281-9735-7
Publisher: IEEE
DOI: 10.1109/snw50361.2020.9131656

III-V Nanowire MOSFETs: RF-Properties and Applications

Author(s): Lars-Erik Wernersson
Published in: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020, Page(s) 1-4, ISBN 978-1-7281-9749-4
Publisher: IEEE
DOI: 10.1109/bcicts48439.2020.9392932

Cryo-CMOS Compact Modeling

Author(s): Christian Enz, Arnout Beckers, Farzan Jazaeri
Published in: 2020 IEEE International Electron Devices Meeting (IEDM), 2020, Page(s) 25.3.1-25.3.4, ISBN 978-1-7281-8888-1
Publisher: IEEE
DOI: 10.1109/iedm13553.2020.9371894

Ultra-Low Power Scaled III-V-on-Si 1T-DRAMs With Quantum Well Heterostructures

Author(s): C. Convertino, L. Vergano, L. Czornomaz, C. B. Zota, S. Karg
Published in: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, Page(s) 1-4, ISBN 978-1-7281-8765-5
Publisher: IEEE
DOI: 10.1109/eurosoi-ulis49407.2020.9365288

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

Author(s): Mikaël Cassé, Gérard Ghibaudo
Published in: Low-Temperature Technologies [Working Title], 2021
Publisher: IntechOpen
DOI: 10.5772/intechopen.98403

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