Cryogenic 3D Nanoelectronics

Risultati finali

Final benchmarking towards evolving wideband communication and sensing including identification of limiting factors
Initial benchmarking towards evolving wideband communication and sensing
Final report on electrical parameter, interface dielectric trap and RF (S parameter and NF) characterization of devices operated at cryogenic condition

Final report on electrical parameter interface dielectric trap and RF S parameter and NF characterization of devices operated at cryogenic condition

Report on first version of device compact models for LF and RF circuit simulation
First report on interface dielectric trap and RF (S parameter and NF) characterization of devices operated at cryogenic condition
Web site launch
Report on extremely low temperature (20mK-4K) device characterization

Report on extremely low temperature 20mK4K device characterization

Road map for integrated and improved quantum computer electronics
Report on device compact modelling for LF and RF circuit simulation
Report on self heating device characterization by thermal and electrical techniques
Review of key building blocks for cryogenic logic and space, 40-70 K, as well as wideband communication, RT
First report on electrical characterization and parameter extraction of devices operated at cryogenic condition
External Communication Plan
Dissemination Plan
Final Dissemination Plan
Initial report on circuit design with layouts and simulated performance

Pubblicazioni

On the diffusion current in a MOSFET operated down to deep cryogenic temperatures

Autori: G. Ghibaudo, M. Aouad, M. Casse, T. Poiroux, C. Theodorou
Pubblicato in: Solid-State Electronics, Numero 176, 2021, Pagina/e 107949, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2020.107949

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Autori: Bruna Cardoso Paz, Mikael Casse, Christoforos Theodorou, Gerard Ghibaudo, Thorsten Kammler, Luca Pirro, Maud Vinet, Silvano de Franceschi, Tristan Meunier, Fred Gaillard
Pubblicato in: IEEE Transactions on Electron Devices, Numero 67/11, 2020, Pagina/e 4563-4567, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3021999

First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth

Autori: Fabian Thome, Arnulf Leuther
Pubblicato in: IEEE Journal of Solid-State Circuits, 2021, Pagina/e 1-1, ISSN 0018-9200
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jssc.2021.3052952

Optimization of Near‐Surface Quantum Well Processing

Autori: Patrik Olausson, Lasse Södergren, Mattias Borg, Erik Lind
Pubblicato in: physica status solidi (a), Numero 218/7, 2021, Pagina/e 2000720, ISSN 1862-6300
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202000720

Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs

Autori: Abinaya Krishnaraja, Johannes Svensson, Elvedin Memisevic, Zhongyunshen Zhu, Axel R. Persson, Erik Lind, Lars Reine Wallenberg, Lars-Erik Wernersson
Pubblicato in: ACS Applied Electronic Materials, Numero 2/9, 2020, Pagina/e 2882-2887, ISSN 2637-6113
Editore: ACS
DOI: 10.1021/acsaelm.0c00521

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

Autori: Mikaël Cassé, Bruna Cardoso Paz, Gérard Ghibaudo, Thierry Poiroux, Emmanuel Vincent, Philippe Galy, André Juge, Fred Gaillard, Silvano de Franceschi, Tristan Meunier, Maud Vinet
Pubblicato in: Applied Physics Letters, Numero 116/24, 2020, Pagina/e 243502, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0007100

Simulation of low-noise amplifier with quantized ballistic nanowire channel

Autori: Christian Marty, Clarissa Convertino, Cezar Zota
Pubblicato in: Semiconductor Science and Technology, Numero 35/11, 2020, Pagina/e 115027, ISSN 0268-1242
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6641/abb841

The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems

Autori: Enrico Caruso, Jun Lin, Scott Monaghan, Karim Cherkaoui, Farzan Gity, Pierpaolo Palestri, David Esseni, Luca Selmi, Paul K. Hurley
Pubblicato in: IEEE Transactions on Electron Devices, Numero 67/10, 2020, Pagina/e 4372-4378, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3018095

A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon

Autori: Clarissa Convertino, Cezar B. Zota, Heinz Schmid, Daniele Caimi, Lukas Czornomaz, Adrian M. Ionescu, Kirsten E. Moselund
Pubblicato in: Nature Electronics, Numero 4/2, 2021, Pagina/e 162-170, ISSN 2520-1131
Editore: Nature
DOI: 10.1038/s41928-020-00531-3

InGaAs MOSHEMT W -Band LNAs on Silicon and Gallium Arsenide Substrates

Autori: Fabian Thome, Felix Heinz, Arnulf Leuther
Pubblicato in: IEEE Microwave and Wireless Components Letters, Numero 30/11, 2020, Pagina/e 1089-1092, ISSN 1531-1309
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/lmwc.2020.3025674

III-V-on-Si transistor technologies: Performance boosters and integration

Autori: D. Caimi, H. Schmid, T. Morf, P. Mueller, M. Sousa, K.E. Moselund, C.B. Zota
Pubblicato in: Solid-State Electronics, Numero 185, 2021, Pagina/e 108077, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108077

Scaled III-V-on-Si Transistors for Low-Power Logic and Memory Applications

Autori: Daniele Caimi, Marilyne Sousa, Siegfried Karg and Cezar B. Zota
Pubblicato in: Japanese Journal of Applied Physics, Numero 60/SB, 2021, Pagina/e SB0801, ISSN 0021-4922
Editore: IOP Science
DOI: 10.35848/1347-4065/abd707

Generalized Boltzmann relations in semiconductors including band tails

Autori: Arnout Beckers, Dominique Beckers, Farzan Jazaeri, Bertrand Parvais, Christian Enz
Pubblicato in: Journal of Applied Physics, Numero 129/4, 2021, Pagina/e 045701, ISSN 0021-8979
Editore: American Institute of Physics
DOI: 10.1063/5.0037432

Mobility of near surface MOVPE grown InGaAs/InP quantum wells

Autori: Lasse Södergren, Navya Sri Garigapati, Mattias Borg, Erik Lind
Pubblicato in: Applied Physics Letters, Numero 117/1, 2020, Pagina/e 013102, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0006530

Heterogeneous Integration of III-V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics

Autori: Daniele Caimi, Preksha Tiwari, Marilyne Sousa, Kirsten E. Moselund, Cezar B. Zota
Pubblicato in: IEEE Transactions on Electron Devices, 2021, Pagina/e 1-8, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2021.3067273

Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design

Autori: Stefan Andric, Lars Ohlsson Fhager, Lars-Erik Wernersson
Pubblicato in: IEEE Transactions on Nanotechnology, Numero 20, 2021, Pagina/e 434-440, ISSN 1536-125X
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tnano.2021.3080621

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

Autori: M. Casse, B. Cardoso Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, F. Gaillard
Pubblicato in: IEEE Transactions on Electron Devices, Numero 67/11, 2020, Pagina/e 4636-4640, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2020.3022607

Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation

Autori: Stefan Andrić, Lars Ohlsson-Fhager, Lars-Erik Wernersson
Pubblicato in: Numero 10-15 Jan. 2021, 2020
Editore: IEEE

Poisson-Schrödinger simulation of inversion charge in FDSOI MOSFET down to 0K - Towards compact modeling for cryo CMOS application

Autori: M. Aouad, S. Martinie, F. Triozon, T. Poiroux, M. Vinet, G. Ghibaudo
Pubblicato in: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, Pagina/e 1-4, ISBN 978-1-7281-8765-5
Editore: IEEE
DOI: 10.1109/eurosoi-ulis49407.2020.9365297

Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving S min = 32 mV/dec and g m /I D = 100 V -1

Autori: Abinaya Krishnaraja, Johannes Svensson, Lars-Erik Wernersson
Pubblicato in: 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 2020, Pagina/e 17-18, ISBN 978-1-7281-9735-7
Editore: IEEE
DOI: 10.1109/snw50361.2020.9131656

III-V Nanowire MOSFETs: RF-Properties and Applications

Autori: Lars-Erik Wernersson
Pubblicato in: 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020, Pagina/e 1-4, ISBN 978-1-7281-9749-4
Editore: IEEE
DOI: 10.1109/bcicts48439.2020.9392932

Cryo-CMOS Compact Modeling

Autori: Christian Enz, Arnout Beckers, Farzan Jazaeri
Pubblicato in: 2020 IEEE International Electron Devices Meeting (IEDM), 2020, Pagina/e 25.3.1-25.3.4, ISBN 978-1-7281-8888-1
Editore: IEEE
DOI: 10.1109/iedm13553.2020.9371894

Ultra-Low Power Scaled III-V-on-Si 1T-DRAMs With Quantum Well Heterostructures

Autori: C. Convertino, L. Vergano, L. Czornomaz, C. B. Zota, S. Karg
Pubblicato in: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2020, Pagina/e 1-4, ISBN 978-1-7281-8765-5
Editore: IEEE
DOI: 10.1109/eurosoi-ulis49407.2020.9365288

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

Autori: Mikaël Cassé, Gérard Ghibaudo
Pubblicato in: Low-Temperature Technologies [Working Title], 2021
Editore: IntechOpen
DOI: 10.5772/intechopen.98403

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