Modeling Unconventional Nanoscaled Device FABrication

Información del proyecto

MUNDFAB

Identificador del acuerdo de subvención: 871813

DOI

10.3030/871813

Proyecto cerrado

Fecha de la firma de la CE 5 Noviembre 2019

Fecha de inicio 1 Enero 2020

Fecha de finalización 30 Junio 2023

Financiado con arreglo a

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coste total

€ 3 787 988,75

Aportación de la UE

€ 3 787 988,75

Coordinado por

FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG EV
Germany

CORDIS proporciona enlaces a los documentos públicos y las publicaciones de los proyectos de los programas marco HORIZONTE.

Los enlaces a los documentos y las publicaciones de los proyectos del Séptimo Programa Marco, así como los enlaces a algunos tipos de resultados específicos, como conjuntos de datos y «software», se obtienen dinámicamente de OpenAIRE .

Resultado final

Documents, reports (7)

Report on model evaluation

The report describes the results of the model evaluation

Report on the toolchains for the test applications
Specification report for LA calibration: literature review, missing data, experimental plan

The document contans a specification report for LA calibration, i.e. a literature review, missing data, and an experimental plan

User's feedback to the developed models and TCAD toolchain

Report describing the enduser experience with the models and TCAD toolchain developed

Report describing the device architectures and processing of the test applications

The report describes the device architectures and processing of the test applications

Review of experimental and model state-of-the-art

The deliverable presents a review of experimental and model state-of-the-art for epitaxial deposition

Report on the integration of external KMC/LKMC tools into the TCAD toolchain

The report describes the integration of external KMCLKMC tools into the TCAD toolchain

Other (1)

Symposium at the E-MRS Spring Meeting

A symposium will be organized at the EMRS Spring Meeting

Websites, patent fillings, videos etc. (1)

Set-up of the MUNDFAB web site

The MUNDFAB web site is online, an accompanying report describes the MUNDFAB web site

Publicaciones

Peer reviewed articles (28)

Impact of hydrogen coverage on silane adsorption during Si epitaxy from ab initio simulations

Autores: L. Treps, J. Li, B. Sklénard
Publicado en: Solid-State Electronics, Edición 197, 2022, Página(s) 108441, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108441

A comprehensive atomistic picture of the as-deposited Ni-Si interface before thermal silicidation process

Autores: C. Jara Donoso, A. Jay, J. Lam, J. Muller, G. Larrieu, G. Landa, C. Bongiorno, A. La Magna, A. Alberti, A. Hemeryck
Publicado en: Appl. Surf. Sci., Edición 631, 2023, Página(s) 157563, ISSN 0169-4332
Editor: Elsevier BV
DOI: 10.1016/j.apsusc.2023.157563

Multiscale atomistic modelling of CVD: From gas-phase reactions to lattice defects

Autores: D. Raciti, G. Calogero, D. Ricciarelli, R. Anzalone, G. Morale, D. Murabito, I. Deretzis, G. Fisicaro, A. La Magna
Publicado en: Mater. Sci. Semicond. Proc., Edición 167, 2023, Página(s) 107792, ISSN 1369-8001
Editor: Pergamon Press
DOI: 10.1016/j.mssp.2023.107792

Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory

Autores: J. Michl, A. Grill, D. Waldhoer, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, M. Waltl
Publicado en: IEEE Trans. Electron Devices, Edición 68(12), 2021, Página(s) 6365-6371, ISSN 1557-9646
Editor: IEEE
DOI: 10.1109/ted.2021.3116931

Engineering of dense arrays of vertical Si1-xGex nanostructures

Autores: J. Müller, A. Lecestre, R. Demoulin, F. Cristiano, J.-M. Hartmann, G. Larrieu
Publicado en: Nanotechnology, Edición 34, 2023, Página(s) 105303, ISSN 1361-6528
Editor: IOP Publ.
DOI: 10.1088/1361-6528/aca419

Plasmon resonances in silicon nanowires: geometry effects on the trade-off between dielectric and metallic behaviour

Autores: Giovanni Borgh; Corrado Bongiorno; Antonino La Magna; Giovanni Mannino; Alireza Shabani; Salvatore Patanè; Jost Adam; Rosaria A. Puglisi
Publicado en: Optical Materials Express, Edición 13(3), 2023, Página(s) 598-609, ISSN 2159-3930
Editor: Optical Society of America
DOI: 10.1364/ome.475988

Oxygen vacancy and hydrogen in amorphous HfO₂

Autores: Benoît Sklénard; Lukas Cvitkovich; Dominic Waldhoer; Jing Li
Publicado en: J. Phys. D, Edición 56, 2023, Página(s) 245301, ISSN 1361-6463
Editor: Institute of Physics Publishing (IOP)
DOI: 10.1088/1361-6463/acc878

Dynamic modeling of Si(100) thermal oxidation: Oxidation mechanisms and realistic amorphous interface generation

Autores: L. Cvitkovich, D. Waldhör, A.-M. El-Sayed, M. Jech, C. Wilhelmer, T. Grasser
Publicado en: Appl. Surf. Sci., Edición 610, 2023, Página(s) 155378, ISSN 0169-4332
Editor: Elsevier BV
DOI: 10.1016/j.apsusc.2022.155378

Iterative Rotations and Assignments (IRA): A shape matching algorithm for atomic structures

Autores: M. Gunde, N. Salles, A. Hémeryck, L. Martin-Samos
Publicado en: Software Impacts, Edición 12, 2022, Página(s) 100264, ISSN 2665-9638
Editor: Elsevier
DOI: 10.1016/j.simpa.2022.100264

Machine learning interatomic potential for silicon-nitride (Si3N4) by active learning

Autores: Diego Milardovich; Christoph Wilhelmer; Dominic Waldhoer; Lukas Cvitkovich; Ganesh Sivaraman; Tibor Grasser
Publicado en: J. Chem. Phys., Edición 158, 2023, Página(s) 194802, ISSN 0021-9606
Editor: American Institute of Physics
DOI: 10.1063/5.0146753

Atomistic Insights into Ultrafast SiGe Nanoprocessing

Autores: G. Calogero, D. Raciti, D. Ricciarelli, P. Acosta-Alba, F. Cristiano, R. Daubriac, R. Demoulin, I. Deretzis, G. Fisicaro, J.-M. Hartmann, S. Kerdilès, A. La Magna
Publicado en: J. Phys. Chem. C, 2023, ISSN 1932-7455
Editor: American Chemical Society
DOI: 10.1021/acs.jpcc.3c05999

Multiscale modeling of ultrafast melting phenomena

Autores: Gaetano Calogero; Domenica Raciti; Pablo Acosta-Alba; Fuccio Cristiano; Ioannis Deretzis; Giuseppe Fisicaro; Karim Huet; Sébastien Kerdilès; Alberto Sciuto; Antonino La Magna
Publicado en: npj Computational Materials, Edición 8, 2022, Página(s) 36, ISSN 2057-3960
Editor: Nature Publ. Group
DOI: 10.1038/s41524-022-00720-y

Building robust machine learning force fields by composite Gaussian approximation potentials

Autores: D. Milardovich, D. Waldhoer, M. Jech, A.M. El-Sayed, T. Grasser
Publicado en: Solid-State Electron., Edición 200, 2023, Página(s) 108529, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108529

Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: Experimental

Autores: J. Michl, A. Grill, D. Waldhoer, W. Goes, B. Kaczer, D. Linten, B. Parvais, B. Govoreanu, I. Radu, T. Grasser, M. Waltl
Publicado en: IEEE Trans. Electron Devices, Edición 68(12), 2021, Página(s) 6372-6378, ISSN 1557-9646
Editor: IEEE
DOI: 10.1109/ted.2021.3117740

Impact of surface reflectivity on the ultra-fast laser melting of silicon-germanium alloys

Autores: Ricciarelli, Damiano; Mannino, Giovanni; Deretzis, Ioannis; Calogero, Gaetano; Fisicaro, Giuseppe; Daubriac, Richard; Demoulin, Remi; Cristiano, Fuccio; Michalowski, Pawel P.; Acosta-Alba, Pablo; Hartmann, Jean-Michel; Kerdilès, Sébastien; La Magna, Antonino
Publicado en: Mater. Sci. Semicond. Proc., Edición 165, 2023, Página(s) 107635, ISSN 1369-8001
Editor: Pergamon Press
DOI: 10.1016/j.mssp.2023.107635

Performance of Vertical Gate-all-around Nanowire p-MOS Transistors Determined by Boron Depletion During Oxidation

Autores: C. Rossi, A. Burenkov, P. Pichler, E. Bär, J. Müller, G. Larrieu
Publicado en: Solid-State Electron., Edición 200, 2023, Página(s) 108551, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108551

Phononic transport and simulations of annealing processes in nanometric complex structures

Autores: Alberto Sciuto, Ioannis Deretzis, Giuseppe Fisicaro, Salvatore Francesco Lombardo, Maria Grazia Grimaldi, Karim Huet, Benoit Curvers, Bobby Lespinasse, Armand Verstraete, Antonino La Magna
Publicado en: Physical Review Materials, Edición 4/5, 2020, Página(s) 056007, ISSN 2475-9953
Editor: American Physical Society
DOI: 10.1103/physrevmaterials.4.056007

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers

Autores: L. Dagault, S. Kerdilès, P. Acosta Alba, J.-M. Hartmann, J.-P. Barnes, P. Gergaud, E. Scheid, F. Cristiano
Publicado en: Applied Surface Science, Edición 527, 2020, Página(s) 146752, ISSN 0169-4332
Editor: Elsevier BV
DOI: 10.1016/j.apsusc.2020.146752

Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1−xO2

Autores: A.-M. El-Sayed, M. Jech, D. Waldhör, A. Makarov, M. I. Vexler, S. Tyaginov
Publicado en: Phys. Rev. Materials, Edición 6, 2022, Página(s) 125002, ISSN 2475-9953
Editor: American Physical Society
DOI: 10.1103/physrevmaterials.6.125002

Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities

Autores: R. Monflier, T. Tabata, H. Rizk, J. Roul, K. Huet, F. Mazzamuto, P. Acosta Alba, S. Kerdilès, S. Boninelli, A. La Magna, E. Scheid, F. Cristiano, E. Bedel-Pereira
Publicado en: Applied Surface Science, Edición 546, 2021, Página(s) 149071, ISSN 0169-4332
Editor: Elsevier BV
DOI: 10.1016/j.apsusc.2021.149071

Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture

Autores: C. Wilhelmer, D. Waldhoer, M. Jech, A.M. El-Sayed, L. Cvitkovich, M. Waltl, T. Grasser
Publicado en: Microelectron. Reliab., Edición 139, 2022, Página(s) 114801, ISSN 0026-2714
Editor: Elsevier BV
DOI: 10.1016/j.microrel.2022.114801

Multiscale Simulations for Defect-Controlled Processing of Group IV Materials

Autores: G. Calogero, I. Deretzis, G. Fisicaro, M. Kollmuß, F. La Via, S. F. Lombardo, M. Schöler, P.J. Wellmann, A. La Magna
Publicado en: Crystals, Edición 12, 2022, Página(s) 1701, ISSN 2073-4352
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/cryst12121701

Molecule Clustering Dynamics in the Molecular Doping Process of Si(111) with Diethyl-propyl-phosphonate

Autores: M. Pizzone, M. G. Grimaldi, A. La Magna, S. Scalese, J. Adam, R. A. Puglisi
Publicado en: Int. J. Mol. Sci., Edición 24(8), 2023, Página(s) 6877, ISSN 1422-0067
Editor: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/ijms24086877

Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires

Autores: Paweł Piotr Michałowski; Jonas Müller; Chiara Rossi; Alexander Burenkov; Eberhard Bär; Guilhem Larrieu; Peter Pichler
Publicado en: Measurement, Edición 211, 2023, Página(s) 112630, ISSN 0263-2241
Editor: Elsevier BV
DOI: 10.1016/j.measurement.2023.112630

On Continuum Simulations of the Evolution of Faulted and Perfect Dislocation Loops in Silicon during Post-Implantation Annealing

Autores: Anna Johnsson
Publicado en: MRS Advances, Edición 7, 2022, Página(s) 1315-1320, ISSN 2059-8521
Editor: Springer Nature Switzerland AG
DOI: 10.1557/s43580-022-00424-x

Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework

Autores: Julliard, P.L.; Johnsson, A.; Zographos, N.; Demoulin, R.; Monflier, Richard; Jay, A.; Er-Riyahi, O.; Monsieur, F.; Joblot, S.; Deprat, F.; Rideau, D.; Pichler, P.; Hémeryck, Anne; Cristiano, Fuccio
Publicado en: Solid-State Electronics, Edición 200, 2023, Página(s) 108521, ISSN 0038-1101
Editor: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108521

IRA: A Shape Matching Approach for Recognition and Comparison of Generic Atomic Patterns

Autores: M. Gunde, N. Salles, A. Hémeryck, L. Martin-Samos
Publicado en: J. Chem. Inf. Model., Edición 61(11), 2021, Página(s) 5446–5457, ISSN 1549-960X
Editor: American Chemical Society
DOI: 10.1021/acs.jcim.1c00567

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

Autores: N. Chery, M. Zhang, R. Monflier, N. Mallet, G. Seine, V. Paillard, J. M. Poumirol, G. Larrieu, A. S. Royet, S. Kerdilès, P. Acosta-Alba, M. Perego, C. Bonafos, F. Cristiano
Publicado en: J. Appl. Phys., Edición 131, 2022, Página(s) 065301, ISSN 0021-8979
Editor: American Institute of Physics
DOI: 10.1063/5.0073827

Conference proceedings (11)

Implant heating contribution to amorphous layer formation: a KMC approach

Autores: P.L. Julliard, P. Dumas, F. Monsieur, F. Hilario, D. Rideau, A. Hemeryck, F. Cristiano
Publicado en: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, Página(s) 43-46, ISBN 978-4-86348-763-5
Editor: IEEE
DOI: 10.23919/sispad49475.2020.9241608

Advanced simulations on laser annealing: explosive crystallization and phonon transport corrections

Autores: Alberto Sciuto, Ioannis Deretzis, Giuseppe Fisicaro, Salvatore F. Lombardo, Antonino La Magna, Maria Grazia Grimaldi, Karim Huet, Bobby Lespinasse, Armand Verstraete, Benoit Curvers, Igor Bejenari, Alexander Burenkov, Peter Pichler
Publicado en: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, Página(s) 71-74, ISBN 978-4-86348-763-5
Editor: IEEE
DOI: 10.23919/sispad49475.2020.9241660

Molecular Dynamics Simulations Supporting the Development of a Continuum Model of Heat Transport in Nanowires

Autores: I. Bejenari, A. Burenkov, P. Pichler, I. Deretzis, A. Sciuto, A. La Magna
Publicado en: Proceedings of the 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2021), 2021, Página(s) 194-199, ISBN 9781665418973
Editor: IEEE
DOI: 10.1109/therminic52472.2021.9626512

Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study

Autores: Antoine Jay; Anne Hémeryck; Filadelfo Cristiano; Denis Rideau; P.L. Julliard; Vincent Goiffon; A. LeRoch; Nicolas Richard; L. Martin Samos; S. de Gironcoli
Publicado en: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, Página(s) 128-132, ISBN 9781665406864
Editor: IEEE
DOI: 10.1109/sispad54002.2021.9592553

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States

Autores: T. Grasser, B. O'Sullivan, B. Kaczer, J. Franco, B. Stampfer, M. Waltl
Publicado en: 2021 IEEE International Reliability Physics Symposium (IRPS), 2021, Página(s) 1-6, ISBN 978-1-7281-6893-7
Editor: IEEE
DOI: 10.1109/irps46558.2021.9405184

Machine Learning Prediction of Defect Formation Energies in a-SiO 2

Autores: Diego Milardovich, Markus Jech, Dominic Waldhoer, Michael Waltl, Tibor Grasser
Publicado en: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, Página(s) 339-342, ISBN 978-4-86348-763-5
Editor: IEEE
DOI: 10.23919/sispad49475.2020.9241609

Polarons as a universal source of leakage currents in amorphous oxides: a multiscale modeling approach

Autores: D. Waldhoer, C. Schleich, A.-M. El-Sayed, T. Grasser
Publicado en: Proc. SPIE, Edición 12422, 2023, Página(s) 1242203, ISSN 0277-786X
Editor: SPIE
DOI: 10.1117/12.2659249

Developing a Neural Network potential to investigate interface phenomena in solid-phase epitaxy

Autores: Ruggero Lot; Layla Martin-Samos; Stefano de Gironcoli; Anne Hemeryck
Publicado en: 16th IEEE Nanotechnology Materials and Devices Conference (IEEE NMDC 2021), 2021, Página(s) 82-86, ISBN 9781665446532
Editor: IEEE
DOI: 10.1109/nmdc50713.2021.9677541

Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires

Autores: Igor Bejenari; Alexander Burenkov; Peter Pichler; Ioannis Deretzis; Antonino La Magna
Publicado en: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2020), Edición 2, 2020, Página(s) 67-70
Editor: IEEE
DOI: 10.23919/sispad49475.2020.9241646

Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO 2

Autores: Pierre-Louis Julliard; Antoine Jay; Miha Gunde; Nicolas Salles; Frederic Monsieur; Nicolas Guitard; Thomas Cabout; Sylvain Joblot; Layla Martin-Samos; Denis Rideau; Fuccio Cristiano; Anne Hémeryck
Publicado en: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, Página(s) 219-223, ISBN 9781665406864
Editor: IEEE
DOI: 10.1109/sispad54002.2021.9592580

Advanced Contacts on 3D Nanostructured Channels for Vertical Transport Gate-all-around Transistors

Autores: G. Larrieu, J. Müller, S. Pelloquin, A. Kumar, K. Moustakas, P. Michałowski, A. Lecestre
Publicado en: 21st International Workshop on Junction Technology (IWJT), 2023
Editor: IEEE
DOI: 10.23919/iwjt59028.2023.10175172