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CORDIS - Risultati della ricerca dell’UE
CORDIS

Building the fully European supplY chain on RFSOI, enabling New RF Domains for Sensing, Communication, 5G and beyond

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Pubblicazioni

High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications (si apre in una nuova finestra)

Autori: Q. Courte, M. Rack, M. Nabet, P. Cardinael and J.-P. Raskin
Pubblicato in: 2022
Editore: in IEEE Journal of the Electron Devices Society
DOI: 10.1109/jeds.2022.3188893

Self-Heating Characterization in 22FDX and 45RFSOI

Autori: A. Halder
Pubblicato in: 2021
Editore: GlobalFoundries 45RFSOI Team USA, Online

Multi-beam antenna for Ka-band CubeSat connectivity using 3-D printed lens and antenna array

Autori: K. Trzebiatowski, W. Kalista, M. Rzymowski, L. Kulas and K. Nyka
Pubblicato in: 2022
Editore: in IEEE Antennas and Wireless Propagation Letters, 2022 (accepted for publication).

“FD-SOI mm-Wave Differential Single-Pole Switches with Ultra-High Isolation”,

Autori: M. Rack et al.
Pubblicato in: Numero pp. 1-2., 2021
Editore: Int. Symp. on VLSI Technology, Systems and Applications (VLSI-TSA)

Performance Evaluation of V2X Communication for Connected Autonomous Vehicles in Platooning

Autori: Burak Senkus, Mujdat Soyturk.
Pubblicato in: 2022
Editore: In: 48th Annual Conference of the Industrial Electronics Society IECON 2022 Conference.

The phrase-derived metric for human target recognition using a 77-GHz MIMO FMCW radar

Autori: Keivan Alirezazad
Pubblicato in: 2023
Editore: UNIBWM

Simulation of Nitrogen In-Diffusion and its Impact on Silicon Wafer Strength

Autori: T. Müller, G. Kissinger, D. Kot, M. Gehmlich, M. Boy, A. Vollkopf, A. Sattler, A. Miller
Pubblicato in: 19th Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2021), 2022
Editore: Siltronic

“Impact of Device Shunt Loss on mm-Wave Switch Performance in 22 nm FD-SOI and DC-80 GHz SPDT” (si apre in una nuova finestra)

Autori: [C4] M. Rack, L. Nyssens, Q. Courte, D. Lederer, and J.-P. Raskin
Pubblicato in: 2021
Editore: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference
DOI: 10.1109/essderc53440.2021.9631835

High-Efficiency Power Amplifiers in RF-SOI technology: Challenges, Progress and Perspectives

Autori: A. Giry, A. Serhan, P. Reynier
Pubblicato in: 2021
Editore: ESSCIRC 2021 Workshop

High-Resistivity Substrates with PN Interface Passivation in 22 nm FD-SOI (si apre in una nuova finestra)

Autori: M. Rack et al.
Pubblicato in: 2022
Editore: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2022, pp. 1-2,
DOI: 10.1109/vlsi-tsa54299.2022.9771028

A Configurable Implementation of Adaptive Digital Predistortion System for RF Power Amplifiers

Autori: Dursun Baran, Emre Ulusoy
Pubblicato in: 2022
Editore: MIKON 2022

Hybrid architectures and technologies for Load-Modulated Power Amplifiers

Autori: A. Serhan, A. Giry, P. Reynier, D. Parat
Pubblicato in: 2022
Editore: "Workshop IEEE RFIC ""Recent Developments in Sub-6 GHz PAs and Front-End Modules"""

Back-Gate Lumped Resistance Effect on AC Characteristics of FD-SOI MOSFET (si apre in una nuova finestra)

Autori: M. Vanbrabant, et al
Pubblicato in: vol. 32, no. 6, pp. 704-707, 2022
Editore: in IEEE Microwave and Wireless Components Letter
DOI: 10.1109/lmwc.2022.3162497

11.8 GHz LC-VCO in 65 nm CMOS for 5G NR Based C-V2X Applications

Autori: Kayanselcuk T. , Zencir E. A Low Power, Low Phase Noise
Pubblicato in: 31(08):2250140., 2022
Editore: Journal of Circuits, Systems and Computers

Trends and innovation on engineering substrates for 5G and beyond

Autori: L. Andia
Pubblicato in: IEEE LAEDC 2021, 2021
Editore: SOITEC

Spectrum Sensing and Signal Identification With Deep Learning Based on Spectral Correlation Function

Autori: K. Tekbıyık, Ö. Akbunar, A. R. Ekti, A. Görçin, G. K. Kurt and K. A. Qaraqe
Pubblicato in: vol. 70, no. 10, pp. 10514-10527, 2021
Editore: in IEEE Transactions on Vehicular Technology.

22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C (si apre in una nuova finestra)

Autori: A. Halder, L. Nyssens, M. Rack, D. Lederer, V. Kilchytska and J.-P. Raskin
Pubblicato in: 2022
Editore: 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
DOI: 10.1109/sirf53094.2022.9720052

"""Addressing design challenges in High-Power Wi-Fi 5/6 Front End Modules"""

Autori: P. Reynier, V. Poisson
Pubblicato in: 2021
Editore: ESSCIRC 2021 Workshop

PN Junctions Interface Passivation in 22 nm FD-SOI for Low-Loss Passives

Autori: Lucas Nyssens
Pubblicato in: 24th International Microwave and Radar Conference, 2022
Editore: MIKON 2022

European Semiconductor Outlook and two case studies; OCEAN12 & BEYOND5

Autori: Erkan İsa, Dominique Morche
Pubblicato in: 2023
Editore: FhG , CEA-LETI

A High-Power SOI-CMOS PA Module with Fan-Out Wafer-Level Packaging for 2.4 GHz Wi-Fi 6 Applications

Autori: P. Reynier; A. Serhan; D. Parat; R. Mourot; M. Gaye; P. Kauv; A. Cardoso; A. Gouvea; S. Nogueira; A. Giry
Pubblicato in: 2021
Editore: RFIC 2021 Conference

A highly rugged 39 GHz 19.3 dBm Power Amplifier for 5G Applications in 45nm SOI Technology

Autori: N. Baudouin, Y. Morandini
Pubblicato in: EUMW - European Microwave Week, 2022
Editore: LETI & SOITEC

"“ SOI technology and design challenges for RF and mmWave: from Front-End Modules to SoC"""

Autori: Y. Morandini
Pubblicato in: 2021
Editore: ESSDERC 2021

Modeling of Semiconductor Substrates for RF Applications: Part I—Static and Dynamic Physics of Carriers and Traps (si apre in una nuova finestra)

Autori: M. Rack, F. Allibert and J. -P. Raskin
Pubblicato in: vol. 68, no. 9, pp. 4598-4605, 2021
Editore: IEEE TED
DOI: 10.1109/ted.2021.3096777

Wideband Load pull Techniques: State of the art and future perspective

Autori: G. Avolio, M. Marchetti
Pubblicato in: URSI GAAS, 2021
Editore: Anteverta

Wideband Modulated Load- Pull for Design Validation and Verification

Autori: Mauro Marchetti
Pubblicato in: European Microwave Week(EUMW), 2021
Editore: Anteverta

Back-Gate Network Extraction Free from Dynamic Self-Heating in FD SOI (si apre in una nuova finestra)

Autori: Lucas Nyssens, Martin Rack, Arka Halder, Martin Vanbrabant, Valeriya Kilchytska, Jean-Pierre Raskin
Pubblicato in: 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, Pagina/e 1-2, ISBN 978-1-6654-1934-5
Editore: IEEE
DOI: 10.1109/vlsi-tsa51926.2021.9440125

A DC 120 GHz SPDT Switch Based on 22 nm FD SOI SLVT NFETs with Substrate Isolation Rings Towards Increased Shunt Impedance

Autori: M. Rack
Pubblicato in: IEEE Radio Frequency Integrated Circuits Symposium, 2022
Editore: UCL

VeNIT LAB By MU

Autori: Müjdat Soytürk, Berkay Yaman, Burak Şenkuş, Hüseyin Aydın
Pubblicato in: 2022
Editore: MU

High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications

Autori: Q. Courte, M. Rack, M. Nabet, P. Cardinael and J.-P. Raskin,
Pubblicato in: 51st European Solid-State Device Research Conference, 2021
Editore: ESSDERC UCL_C3

“TCAD at the heart of innovation in RF SOI technology”

Autori: J.-P. Raskin
Pubblicato in: 2020
Editore: UCL

"""Pre-recorded presentation of Demo 2 (Beyond5) - How to build a smarter, more secure, greener automotive chips, software and systems”."

Autori: Berfin Kahraman, Anja Boelicke, François Brunier
Pubblicato in: 2020
Editore: IP SoC 2020 Grenoble

Presentation of BEYOND5 project

Autori: Soitec
Pubblicato in: IEEE BROAD Workshop, 2020
Editore: Soitec

Integrated Circuits for 5G Wireless Communication”

Autori: Giovanni Mangraviti
Pubblicato in: 2020
Editore: the “5G Forum” EUROPEAN MICROWAVE WEEK 2020

Implementation of High Performance Multi-Agent Position Feeding Framework

Autori: Burak Senkus, Berkay Yaman, Huseyin Aydin and Mujdat Soyturk
Pubblicato in: 2022
Editore: 24th International Microwave and Radar Conference

Engineering Trap Rich Layers for communication applications

Autori: F. Allibert
Pubblicato in: EUROSOI ULIS 2021, 2021
Editore: SOITEC

Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors

Autori: D. K. Huynh, Q. H. Le, S. Lehmann, Z. Zhao, G. Bossu, W. Arfaoui, D.
Pubblicato in: 2022
Editore: EuMC Conference 2022

Impact of Substrate Resistivity on Spiral Inductors at MM Wave Frequencies (si apre in una nuova finestra)

Autori: L. Nyssens
Pubblicato in: EUROSOI ULIS 2022, 2022
Editore: UCL
DOI: 10.1016/j.sse.2022.108377

“Modeling of Semiconductor Substrates for RF Applications: Part I—Static and Dynamic Physics of Carriers and Traps”

Autori: M. Rack ( UCL), F. Allibert (SOITEC)
Pubblicato in: Numero IEEE TED, VOL. 68, NO. 9,, 2021
Editore: IEEE TED

A Novel Approach for Doherty PA Design using a Compact L-C Combiner

Autori: J. Bachi, A. Serhan, D-K. Germain Pham, D. Parat, P. Reynier, P. Desgreys, A. Giry
Pubblicato in: 2022
Editore: IEEE Transactions on Circuits and Systems--II: Express Briefs

High-resistivity silicon-based substrate using buried PN junctions towards RFSOI applications (si apre in una nuova finestra)

Autori: M. Moulin et al.
Pubblicato in: 2022
Editore: Solid-State Electronics 194
DOI: 10.1016/j.sse.2022.108301

A Novel OTA Near Field Measurement Approach Suitable for 5G mmWave Wideband Modulated Test

Autori: M. Löhning , T. Deckert, V. Kotzsch, M. Vanden Bossche
Pubblicato in: 2022
Editore: NI

A Reconfigurable SOI CMOS Doherty Power Amplifier Module for Broadband LTE High-Power User Equipment Applications

Autori: A. Serhan, D. Parat, P. Reynier, M. Pezzin, R. Mourot, F. Chaix, R. Berro, P. Indirayanti , K. Han, M. Borremans, E. Mercier, A. Giry
Pubblicato in: 2020
Editore: RFIC 2020 Conference

Characterization of Traps in High Resistivity Silicon Substrates and Link with Radio Frequency Performances

Autori: Frédéric Allibert, Eric Vandermolen, Martin Rack
Pubblicato in: European Materials Research Society (E-MRS) 2021, 2021
Editore: Soitec, UCL

A Digital Filter Design at Auxiliary Receiver for Optimal Pre-Distortion Performance

Autori: Dursun Baran
Pubblicato in: Signal Processing and Communications Applications, 2022
Editore: TUBITAK

Load pull techniques for 5G and 6G applications: state of the art and future

Autori: M. Marchetti, et al.
Pubblicato in: Benelux RF conference, 2022
Editore: Anteverta

Sub-6GHz SOI-CMOS High-efficiency linear PA architectures: challenges, techniques, and opportunities

Autori: Ayssar Serhan
Pubblicato in: GdR SoC, National Conference, 2021
Editore: CEA-Leti

Assessment of RF compact modelling of FD SOI transistors (si apre in una nuova finestra)

Autori: Martin Vanbrabant, Lucas Nyssens, Valeriya Kilchytska, Jean-Pierre Raskin
Pubblicato in: 2021 IEEE Latin America Electron Devices Conference (LAEDC), 2021, Pagina/e 1-3, ISBN 978-1-6654-1510-1
Editore: IEEE
DOI: 10.1109/laedc51812.2021.9437955

Modeling of Semiconductor Substrates for RF Applications (si apre in una nuova finestra)

Autori: M. Rack, F. Allibert and J. -P. Raskin
Pubblicato in: Part II—Parameter Impact on Harmonic Distortion; vol. 68, no. 9, pp. 4606-4613, 2021
Editore: IEEE TED
DOI: 10.1109/ted.2021.3096781

A Fully Differential 146.6 157.4 GHz LNA Utilizing Back Gate Control to Adjust Gain in 22 nm FDSOI

Autori: Patrick Artz et al.
Pubblicato in: International Microwave Symposium, 2022
Editore: FhG

A 2.5-2.6 dB Noise Figure LNA for 39 GHz band in 22 nm FD-SOI with Back-Gate Bias Tunability

Autori: L. Nyssens, et al
Pubblicato in: 2022
Editore: submitted to EuMW 2022.

Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits (si apre in una nuova finestra)

Autori: Jean-Pierre Raskin
Pubblicato in: vol.10, pp.424-434, 2023
Editore: IEEE Journal of the Electron Devices Society
DOI: 10.1109/jeds.2022.3165877

A Linear High-Power Reconfigurable SOI-CMOS Front-End Module for WI-FI 6/6E Applications

Autori: D. Parat, A. Serhan, P. Reynier, R. Mourot, A. Giry
Pubblicato in: 2022
Editore: IEEE RFIC

65nm RFSOI Power Amplifier Transistor Ageing at mmW frequencies, 14GHz and 28GHz

Autori: A. Divay et al.
Pubblicato in: 2021
Editore: IEDM

From Connected to Autonomous Vehicles: Intelligent Transportation Systems Workshop

Autori: Mujdat Soyturk, Berkay Yaman
Pubblicato in: 2022
Editore: Marmara University Mehmet Genc Campus

Wideband Load pull Techniques: State of the art and future perspective

Autori: G. Avolio, M. Marchetti
Pubblicato in: EUMW - European Microwave Week, 2022
Editore: Anteverta

mmWave Communications for Indoor Dense Spaces: Ray Tracing Based Channel Characterization and Performance Comparison

Autori: O. A. Topal, M. Özger , D. Schupke , E. Björnson , C. Cavdar
Pubblicato in: IEEE International Conference on Communications (ICC), 2022
Editore: KTH

28 GHz Down-Conversion Mixer with RF Back-Gate Excitation Topology in 22-nm FD-SOI

Autori: M. Nabet, et al
Pubblicato in: 2022
Editore: submitted to EuMW 2022.

Low-Latency MAC Design for Pairwise Random Networks (si apre in una nuova finestra)

Autori: I. A. Meer
Pubblicato in: IEEE VTC Spring, 2022
Editore: KTH
DOI: 10.48550/arxiv.2206.06978

RF-SOI for 5G and beyond

Autori: Yan Morandini
Pubblicato in: ESSCIRC ESSDERC Virtual Educational, 2020
Editore: Soitec

2D CNN GRU Model for Multi Hand Gesture Recognition System Using FMCW Radar

Autori: Keivan Alirezazad, Gregor Rhiel, Linus Maurer
Pubblicato in: NEWCAS 20th IEEE International NEWCAS Conference, 2022
Editore: UBWM

Linear Power Amplifiers for Sub-6GHz Mobile Applications : Progress and Trends

Autori: A. Giry; A. Serhan; D. Parat; P. Reynier
Pubblicato in: 2020
Editore: NEWCAS 2020 Conference

Practical Verification of Over-the-Air Measurements and Correlation across Measurement Setups

Autori: Thomas Deckert, Okay Schierhorn, Harsh Nitharwal, Jan Fromme
Pubblicato in: 2023
Editore: NI

Energy Efficiency Optimization of Radiofrequency Power Amplifiers for Massive MIMO: A Data Based Approach

Autori: L. Godoy, E. Matúš and G. Fettweis
Pubblicato in: 2021
Editore: in Proceedings of 2021 IEEE 22nd International Workshop on Signal Processing Advances in Wireless Communications (SPAWC 2021), Lucca, Italy

A dual-polarized 39 GHz 4x4 microstrip antenna array for 5G MU-MIMO airflight cabin connectivity

Autori: K. Trzebiatowski, J. Fromme, D. Duraj, L. Kulas, K. Nyka,
Pubblicato in: 2022
Editore: 24th International Microwave and Radar Conference (MIKON) 2022 (accepted for publication).

Soitec's engineered substrates for 5G

Autori: Soitec
Pubblicato in: Soitec 5G webinar, 2020
Editore: Soitec

Effect of probe coupling on MOSFET series resistance extraction up to 110 GHz

Autori: Lucas Nyssens, Martin Rack, Dimitri Lederer and Jean-Pierre Raskin
Pubblicato in: 2022
Editore: LAEDC Conference

Virtual booth representing BEYOND5 project

Autori: Soitec
Pubblicato in: EFECS 2020, 2020
Editore: Soitec

A Performance Study of 22nm FDSOI CMOS for Wideband 5G Power Amplifier Applications

Autori: Quang Huy Le et al.
Pubblicato in: 14th German Microwave Conference GeMIC, 2022
Editore: FhG

Back-Gate Network Extraction Free from Dynamic Self-Heating in FD SOI,

Autori: L. Nyssens, M. Rack, A. Halder, M. Vanbrabant, V. Kilchytska and J.-P. Raskin,
Pubblicato in: Numero Systems and Applications (VLSI-TSA), 2021, pp. 1-2,, 2021
Editore: UCL_C12021 International Symposium on VLSI Technology, Systems and Applications

“Field-Effect Passivation of Lossy Interfaces in High-Resistivity RF Silicon Substrates”

Autori: M. Rack, L. Nyssens, M. Nabet, D. Lederer, and J.-P. Raskin,
Pubblicato in: 2021
Editore: EuroSOI-ULIS UCL_C5

Advanced MOSFETs Electrical Characterization for Further Analog and RF applications

Autori: V. Kilchytska, et al
Pubblicato in: 2021
Editore: invited talk at SBMicro

The Antenna Dome Real-Time Distributed Antenna Pattern Characterization System

Autori: F. A. Musters; R.A. Coesoij; M.D. Migliore; F. Schettino; M. Spirito
Pubblicato in: 2021
Editore: IMS ARFTG Conference

TCAD at the heart of innovation in RF SOI technology

Autori: J.-P. Raskin
Pubblicato in: 2021
Editore: (invited talk), Silvaco SURGE 2021

Tunable Power Amplifiers for 5G-FR1 Applications

Autori: A. Giry, A. Serhan, P. Reynier, D. Parat
Pubblicato in: 2022
Editore: IEEE Radio Wireless Week

IC and Package Co-design Techniques & Technologies for High Efficiency Linear PA Modules

Autori: P. Reynier, A. Serhan, D. Parat, A. Giry
Pubblicato in: "Workshop ""Fully Integrated Silicon vs. Hybrid RFFE Systems for mm-Wave 5G Highly Efficient PA Design Trade-offs""", 2021
Editore: RFIC 2021 Workshop

SOI technology and design challenges for RF and mmWave

Autori: Y. Morandini (SOITEC)
Pubblicato in: 2022
Editore: from Front End Modules to SoC

‘A Digital Filter Design at Auxiliary Receiver for Optimal Pre-Distortion Performance’.

Autori: Dursun Baran
Pubblicato in: 2022
Editore: SİU 2022

Design and Integration of Multiband High Efficiency Linear PA Modules for 5G

Autori: Alexandre Giry
Pubblicato in: European Microwave Week(EUMW), 2021
Editore: CEA-Leti

Large-Signal Modeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology

Autori: Quang Huy Le et al.
Pubblicato in: 16th European Microwave Integrated Circuits Conference EuMIC, 2022
Editore: FhG

Nox and buried PN junctions effect on RF performance of High-Resistivity Silicon substrates (si apre in una nuova finestra)

Autori: M. Moulin et al.
Pubblicato in: 2022
Editore: SiRF
DOI: 10.1109/sirf53094.2022.9720037

Sub-6GHz SOI-CMOS High-Efficiency Linear PA Architectures: Challenges, Technics and Opportunities

Autori: A. Serhan, P. Reynier, D. Parat, A. Giry
Pubblicato in: "Workshop ""Frontières et interfaces cyberphysiques"" GDR-SoC2", 2021
Editore: RFIC 2021 Workshop

High-Resistivity Substrates for RF and mm-wave Applications: Focus on Impact in 22FDX

Autori: M. Rack
Pubblicato in: 2022
Editore: CTO talk Global Foundries, Dresden

Experimental study of thermal coupling effects in FD-SOI MOSFET

Autori: M. Vanbrabant
Pubblicato in: EuroSOI-ULIS 2022, 2022
Editore: UCL

Assessment of RF 04/2021 compact modeling of FD SOI transistors

Autori: M. Vanbrabant, L. Nyssens, V. Kilchytska and J.-P. Raskin
Pubblicato in: IEEE Latin America Electron Devices Conference, 2021
Editore: UCL

RF characterization of the back-gate contact on Fully Depleted SOI MOSFETs - Master Thesis defended

Autori: M. Vanbrabant
Pubblicato in: 2020
Editore: UCL

Design of an RC Low Pass Filter 22 nm FD SOI Technology

Autori: Ömer Taha Keleş
Pubblicato in: 2022
Editore: MKR IC

Design of an RC Low-Pass Filter 22 nm FD-SOI Technology

Autori: Ömer Taha Keleş
Pubblicato in: 2022
Editore: MKR IC

Modelling of Advanced Silicon-Based Substrates for RF and mm-Wave Applications

Autori: [PhD1] M. Rack promoter J.-P. Raskin.
Pubblicato in: 2021
Editore: UCL

RF characterization of the back-gate contact on Fully Depleted SOI MOSFETs

Autori: M. Vanbrabant
Pubblicato in: 2020
Editore: UCL

Inter-Transistor Heat Transfer in PDSOI and UTBB FDSOI MOSFET Technologies - Master Thesis defended

Autori: M. Pace
Pubblicato in: 2020
Editore: UCL

Heat Sink implementation in Back-End of Line for Self-Heating reduction in 22 nm FDSOI MOSFETs (si apre in una nuova finestra)

Autori: Arka Halder, Lucas Nyssens, Martin Rack, Dimitri Lederer, Jean-Pierre Raskin, Valeriya Kilchytska
Pubblicato in: Solid-State Electronics, 2021, Pagina/e 108088, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108088

A low-power high-gain and high linearity CMOS RF front-end design involving a charge injection mixer for V2X technology

Autori: Ozkan B. & Zencir E
Pubblicato in: Journal of Circuits, Systems, and Computers, 2021
Editore: TUBITAK

Development of High Resistivity FD SOI substrates for mmWave applications

Autori: I. Bertrand (SOITEC) , LETI and UCL
Pubblicato in: ECS Transactions, 2022
Editore: SOITEC, LETI and UCL

Gain and Bandwidth Programmable Fourth-Order Multiple Feedback Butterworth Low-Pass Filter for C–V2X Applications

Autori: Barin F, Zencir E.
Pubblicato in: Journal of Circuits, Systems and Computers, 2022
Editore: TUBITAK

A High-Speed Fully Differential Telescopic Op-Amp for Active Filter Designs in V2X Applications

Autori: Barin F, Zencir E
Pubblicato in: Journal of Circuits, Systems and Computers, Numero 2022;31(08):2250140, 2022
Editore: TUBITAK

Electrochemical Deposition of Ferromagnetic Ni Nanoparticles in InP Nanotemplates Fabricated by Anodic Etching Using Environmentally Friendly Electrolyte (si apre in una nuova finestra)

Autori: Călin Constantin Moise, Geanina Valentina Mihai, Liana Anicăi, Eduard V. Monaico, Veaceslav V. Ursaki, Marius Enăchescu, Ion M. Tiginyanu
Pubblicato in: Nanomaterials, Numero 12, 2025, Pagina/e 3787, ISSN 2079-4991
Editore: MDPI AG
DOI: 10.3390/nano12213787

The Design and Characterization of New Chitosan, Bioglass and ZnO-Based Coatings on Ti-Zr-Ta-Ag (si apre in una nuova finestra)

Autori: Mariana Prodana, Daniela Ionita, Andrei Bogdan Stoian, Ioana Demetrescu, Geanina Valentina Mihai, Marius Enăchescu
Pubblicato in: Coatings, Numero 13, 2025, Pagina/e 493, ISSN 2079-6412
Editore: MDPI AG
DOI: 10.3390/coatings13030493

Engineering SOI Substrates for RF to mmWave Front-Ends

Autori: F. Allibert, L. Andia, Y. Morandini and C. Veytizou, Soitec, Bernin, France, M. Rack, L. Nyssens and J. P. Raskin, ICTEAM, Université Catholique de Louvain, Louvain-la-Neuve, Belgium, and E. Augendre, CEA-LETI and Université Alpes Grenoble, Grenoble, France
Pubblicato in: Microwave Journal, 2020
Editore: Soitec, CEA, UCL

On the Separate Extraction of Self-Heating and Substrate Effects in FD-SOI MOSFET (si apre in una nuova finestra)

Autori: Lucas Nyssens, M. Rack, A. Halder, J.-P. Raskin, V. Kilchytska
Pubblicato in: IEEE Electron Device Letters, Numero 42/5, 2021, Pagina/e 665-668, ISSN 0741-3106
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/led.2021.3071272

A low-power 65-nm CMOS mixer linearized with IM2 injection for V2X applications

Autori: Özkan B., Zencir E.
Pubblicato in: Analog Integr Circ Sig Process 110, Numero 489–497 (2022), 2022
Editore: TUBITAK

KrF excimer laser for Pt–NPs synthesis by PLAL in isopropanol solution and their use in a SERS application (si apre in una nuova finestra)

Autori: Oana Andreea Lazar, Anastas Savov Nikolov, Călin Constantin Moise, Geanina Valentina Mihai, Mariana Prodana, Marius Enachescu
Pubblicato in: Journal of Materials Research and Technology, Numero 24, 2024, Pagina/e 7135-7152, ISSN 2238-7854
Editore: Elsevier Editora Ltda
DOI: 10.1016/j.jmrt.2023.04.268

Ultra-Wide Bandwidth Fully Differential CMOS Opamp with a Novel Bandwidth Extension Technique for SoC Active Filter Applications

Autori: Kayanselcuk T. , Zencir E.
Pubblicato in: Journal of Circuits, Systems and Computers, Numero 2021;30(12):2150226, 2021
Editore: TUBITAK

Engineered RF SOI substrates for Smart and Sustainable Mobility

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Pubblicato in: EETimes Europe May22, 2022
Editore: SOITEC

Fabrication of Pt nanoparticles by nanosecond pulsed laser ablation in aqueous solution of ethanol using KrF excimer laser (si apre in una nuova finestra)

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Pubblicato in: Applied Surface Science, Numero 609, 2025, Pagina/e 155289, ISSN 0169-4332
Editore: Elsevier BV
DOI: 10.1016/j.apsusc.2022.155289

Characterization and role of deep traps on the radio frequency performances of high resistivity substrates (si apre in una nuova finestra)

Autori: Eric Vandermolen, Frédéric Allibert,Martin Rack
Pubblicato in: Journal of Applied Physics 129, 215701 (2021), 2021
Editore: Journal of Applied Physics 129
DOI: 10.1063/5.0045306

Boosting Supercapacitor Efficiency with Amorphous Biomass‐Derived C@TiO<sub>2</sub> Composites (si apre in una nuova finestra)

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Pubblicato in: ChemSusChem, Numero 17, 2025, ISSN 1864-5631
Editore: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/cssc.202301671

Spectrum Sensing and Signal Identification With Deep Learning Based on Spectral Correlation Function

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Pubblicato in: IEEE Transactions on Vehicular Technology, Numero vol. 70, no. 10, pp. 10514-10527, Oct. 2021, 2021
Editore: TUBITAK

"""Press Release on RF / ConnectivityREFERENCE awarded for “TROPHEE des Etoiles de l’Europe”"""

Autori: Soitec
Pubblicato in: 2020
Editore: SOITEC

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