Descripción del proyecto
Estudio de las implicaciones de estados defectuosos (trampas) en materiales bidimensionales
El interés por los materiales bidimensionales ha aumentado mucho en el último decenio. Su grosor ultradelgado genera propiedades ópticas, electrónicas y optoelectrónicas extraordinarias, razón por la que se emplean como semiconductores. En comparación con los semiconductores tridimensionales tradicionales, su densidad de integración es mayor. El proyecto financiado con fondos europeos TRAPS-2D mejorará el rendimiento de los materiales bidimensionales mediante ingeniería de defectos. Como objetivo se ha propuesto resolver el bajo rendimiento y lograr la cointegración de la tecnología CMOS (semiconductor complementario de óxido metálico). TRAPS-2D realizará un estudio sistemático de las implicaciones de los estados defectuosos (trampas) en materiales bidimensionales. Los resultados del proyecto darán lugar a aplicaciones electrónicas comerciales mucho mejores.
Objetivo
Dr. Marquez proposes a new approach to improve the performance of 2D materials: the defect-engineering. This approach aims to investigate the critical issue of defects implication on the 2D semiconductors operation to solve the low performance and to accomplish a future CMOS co-integration. Electrically activated interfaces, surface and oxide states have demonstrated not only to reduce the device performance but also making the device to behave in a determine operation. Surface defect have shown metal workfunction pinning and therefore formation of Schottky barriers at the contact-semiconductor interface. In addition, depending on the energy level these defect, they can contribute like donor or acceptor dopant or like generation-recombination (trap) centers. In this regard, the fabricated devices would operate differently, presenting n-type, ambipolar or p-type behavior and accumulation or inversion operation modes. Fast operating, normally-on or normally-of devices can be addressed controlling the defect implications. The understanding and control of these defect states and impurities in 2D semiconductor systems is an essential area of research, and the first step is to develop the metrology tools to accurately quantify defect densities and distributions gaining further insight into the possible origin of the defects states. “TRAPS-2D” is a proposal to systematical study of defect (trap) states implications on 2D materials. Its novelty resides in the control of these defects to force the fabricated devices to operate in a specific mode and therefore control their performance. Additionally, the proposal holds an important technological transfer aspect considering the co-integration of these 2D materials in the standard CMOS processes to open the doors to ultimate commercial electronic applications.
Ámbito científico
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensors
- engineering and technologynanotechnologynano-materialstwo-dimensional nanostructures
- natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity
Palabras clave
Programa(s)
Régimen de financiación
MSCA-IF - Marie Skłodowska-Curie Individual Fellowships (IF)Coordinador
18071 Granada
España