Objective
Deposition of silicon carbide films using Molecular Beam Epitaxy and Low Pressure Chemical Vapour Deposition were investigated. Deposition by MBE was performed using Solid Source MBE and Gas Source MBE. The different stages of film growth were investigated and special emphasis was laid on the initial growth phase, where film nucleation and growth under different growth conditions were analysed.
Polycrystalline and amorphous silicon carbide films were grown by LPCVD. This technique when compared to other methods has the advantage of deposition over a large area. A thorough investigation of the silicon carbide film quality depending on different deposition parameters was performed in order to establish optimised film characteristics.
Processing technologies for silicon carbide are important as they provide test devices for the characterization of the silicon carbide material deposited and also lead to enabling technologies that are required for the design of prospective devices. Technological areas that have been successfully investigated include doping of SiC films by high temperature implantation, electrical contacts to SiC material and etching of SiC films.
Transducer effects like Hall effect, thermoresistive effect and piezoresistive effect were characterized. The gauge factors of the thin SiC films were determined using the beam deflection technique. The piezoresistive effect was examined in relation to doping and temperature.
The project is primarily devoted to deposition of amorphous,polycrystalline and monocrystalline silicon carbide films by means of LPCVD and MBE,their doping during deposition and by ion implantation and fundamental investigations into those physical and optical effects (Hall effect,magnetoresistive effect, thermoresistive effect,photoresistive effect,photoelectric effect) which can be used for design and implementation of integrated microsystems. Research into the morphology of films by means of TEM,XRD and Raman spectroscopy will provide insight into their structure, chemistry and growth mechanisms.
A further important subject involves the fabrication of high-temperature resistant contacts (up to 800 C) on n-and p-materials as well patterning of SiC films by means of dry-etching methods.
The outcome of the work should provide a basis for the design of integrated systems incorporating sensors with improved performance and reliability.
Fields of science (EuroSciVoc)
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
CORDIS classifies projects with EuroSciVoc, a multilingual taxonomy of fields of science, through a semi-automatic process based on NLP techniques. See: The European Science Vocabulary.
- engineering and technology materials engineering amorphous solids amorphous semiconductors
- natural sciences chemical sciences inorganic chemistry inorganic compounds
- engineering and technology electrical engineering, electronic engineering, information engineering electronic engineering sensors
- natural sciences chemical sciences inorganic chemistry metalloids
- natural sciences physical sciences optics spectroscopy
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Programme(s)
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Multi-annual funding programmes that define the EU’s priorities for research and innovation.
Topic(s)
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Calls for proposals are divided into topics. A topic defines a specific subject or area for which applicants can submit proposals. The description of a topic comprises its specific scope and the expected impact of the funded project.
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Funding Scheme
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Funding scheme (or “Type of Action”) inside a programme with common features. It specifies: the scope of what is funded; the reimbursement rate; specific evaluation criteria to qualify for funding; and the use of simplified forms of costs like lump sums.
Coordinator
13355 Berlin
Germany
The total costs incurred by this organisation to participate in the project, including direct and indirect costs. This amount is a subset of the overall project budget.