Obiettivo The SUBSOITEC project aimed to develop high-performance SOI (Silicon On Insulator)/CMOS technologies for future VLSI circuits, which, while competitive with standard bulk CMOS processes, are compatible with them and offer the inherent advantages of SOI technologies.The SUBSOITEC project aimed to develop high-performance silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) technologies for future very large scale integration (VLSI) circuits, which, while competitive with standard bulk CMOS processes, are compatible with them and offer the inherent advantages of SOI technologies. The project evaluated a complete SOI/CMOS process with 0.7 micron design rules. The programme included development work on silicon implanted oxide (SIMOX) SOI substrates, on the 0.7 micron SOI technology, on device and physics modelling, on design, and on the test and characterization of complex VLSI demonstrators. The work performed in the area of materials fabrication and device evaluation yielded excellent results that compare favourably to work done outside this project. The SOI substrates are among the best available world wide, even for substrates with very thin top silicon thicknesses. The compatibility of SOI processes with standard bulk CMOS technology was considered as a major goal. The portability of bulk design to SOI was studied and implemented. The main difficulties (such as electrostatic discharge (ESD) protection devices and the absence of substrate contacts) are now solved. The ability to realize complex VLSI circuits on SOI with 0.7 micron design rules will be demonstrated, and evaluation of the industrial aspect will be achieved in a comparison of a design in a CMOS SOI with a CMOS bulk process with the same design rules, and by several SOI demonstrators including a 64 k static random access memory (SRAM) and 2 custom chips.CMOS circuits with deep sub-micron geometries require very complex and expensive processes on bulk silicon. An acceptable challenger to bulk Si is SOI material which allows, in principle, a significant reduction of the number of process steps leading to an enhancement of the yield of complex VLSI chips and a reduction in cost. Two other advantages of CMOS on SOI are the reduction of parasitic capacitance (which increases circuit speed), and immunity towards radiation and heavy ion effects (needed for space applications), making this technology competitive with bulk BICMOS technology. Campo scientifico natural scienceschemical sciencesinorganic chemistryinorganic compoundsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural sciencesmathematicspure mathematicsgeometrynatural scienceschemical sciencesinorganic chemistrymetalloids Programma(i) FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992 Argomento(i) Data not available Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore THOMSON CSF SEMICONDUCTEURS SPECIFIQUES Contributo UE Nessun dato Indirizzo 3300 RUE JEAN-PIERRE TIMBAUD 92402 Courbevoie Francia Mostra sulla mappa Costo totale Nessun dato Partecipanti (9) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE Francia Contributo UE Nessun dato Indirizzo Avenue des Martyrs 25 38042 Grenoble Mostra sulla mappa Costo totale Nessun dato Commissariat à l'Energie Atomique (CEA) Francia Contributo UE Nessun dato Indirizzo Centre d'Études de Grenoble 17 avenue des Martyrs 38041 Grenoble Mostra sulla mappa Costo totale Nessun dato Deutsche Aerospace AG Germania Contributo UE Nessun dato Indirizzo Sedanstraße 10 89077 Ulm Mostra sulla mappa Costo totale Nessun dato FRAUNHOFER INSTITUT FÜR SILICATFORSCHUNG Germania Contributo UE Nessun dato Indirizzo ARTILLERIESTRAßE 12 91052 ERLANGEN Mostra sulla mappa Costo totale Nessun dato GEC Marconi Electronic Devices Ltd Regno Unito Contributo UE Nessun dato Indirizzo Lincoln Industrial Park Doddington Road LN6 3LF Lincoln Mostra sulla mappa Costo totale Nessun dato NATIONAL MICROELECTRONICS RESEARCH CENTRE Irlanda Contributo UE Nessun dato Indirizzo PROSPECT ROW CORK Mostra sulla mappa Costo totale Nessun dato SEXTANT AVIONIQUE SA Francia Contributo UE Nessun dato Indirizzo 59 AERODROME DE VILLACOUBLAY 78141 VELIZY-VILLACOUBLAY Mostra sulla mappa Costo totale Nessun dato SGS THOMSON MICROELECTRONICS SA Francia Contributo UE Nessun dato Indirizzo 7 AVENUE GALLIENI 92253 GENTILLY Mostra sulla mappa Costo totale Nessun dato University of Sheffield Regno Unito Contributo UE Nessun dato Indirizzo Western Bank S10 2TN Sheffield Mostra sulla mappa Costo totale Nessun dato