Embedded storage elements on next MCU generation ready for AI on the edge

Informations projet

StorAIge

N° de convention de subvention: 101007321

DOI 10.3030/101007321

Projet clôturé

Date de signature de la CE 12 Mai 2021

Date de début 1 Juillet 2021

Date de fin 31 Octobre 2024

Financé au titre de

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Coût total € 99 414 764,74

Contribution de l’UE € 24 932 343,21

Coordonné par

STMICROELECTRONICS CROLLES 2 SAS
France

CORDIS fournit des liens vers les livrables publics et les publications des projets HORIZON.

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Livrables

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Publications

Conference proceedings (40)

Rapid CNN-Assisted Iterative RIS Element Configuration

Auteurs: Samed Keşir, M. Yaser Yağan, Ibrahim Hökelek, Ali Emre Pusane, Ali Görçin
Publié dans: 2023 International Symposium on Networks, Computers and Communications (ISNCC), 2024, Page(s) 1-6, ISSN 2768-0940
Éditeur: IEEE
DOI: 10.1109/isncc58260.2023.10323787

Status and challenges of in-memory computing for neural accelerators

Auteurs: D. Ielmini, N. Lepri, P. Mannocci and A. Glukhov
Publié dans: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) (2022), 2022
Éditeur: IEEE
DOI: 10.1109/vlsi-tsa54299.2022.9770972

Integration of BEoL compatible 1T-1C FeFET memory cells into an established technology

Auteurs: David Lehninger; Hannes Mähne; Tarek Ali; Raik Hoffmann; Ricardo Olivo; Maximilian Lederer; Konstantin Mertens; Thomas Kämpfe, Kati Biedermann, Matthias Landwehr, Andreas Heinig,Defu Wang, Yukai Shen, Kerstin Bernert, Steffen Thiem, Konrad Seidel
Publié dans: 2022 IEEE International Memory Workshop (IMW), 2022
Éditeur: IEEE
DOI: 10.1109/imw52921.2022.9779252

Improved polarization by interface layer insertion in ferroelectric HfO₂-based MFM capacitors

Auteurs: Ayse Sünbül, David Lehninger, Maximilian Lederer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng
Publié dans: 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF), 2023, Page(s) 1-4, ISSN 2375-0448
Éditeur: IEEE
DOI: 10.1109/isaf53668.2023.10265559

Mitigating read-program variation and IR drop by circuit architecture in RRAM-based neural network accelerators

Auteurs: N. Lepri, A. Glukhov and D. Ielmini
Publié dans: 2022 IEEE International Reliability Physics Symposium (IRPS) 3C2-1-3C2-6 (2022), 2022
Éditeur: IEEE
DOI: 10.1109/irps48227.2022.9764486

Channel-wise Mixed-precision Assignment for DNN Inference on Constrained Edge Nodes

Auteurs: Matteo Risso, Alessio Burrello, Luca Benini, Enrico Macii, Massimo Poncino and Daniele Jahier Pagliari
Publié dans: Proceedings of the 2022 IEEE 13th International Green and Sustainable Computing Conference (IGSC), 2022
Éditeur: IEEE
DOI: 10.1109/igsc55832.2022.9969373

Measurement-Based Modeling of Short Range Terahertz Channels and Their Capacity Analysis

Auteurs: Erhan Karakoca, Hasan Nayir, Güneş Karabulut Kurt, Ali Görçin
Publié dans: GLOBECOM 2023 - 2023 IEEE Global Communications Conference, 2024
Éditeur: IEEE
DOI: 10.1109/globecom54140.2023.10437716

Phase-Change Memory in Neural Network Layers with Measurements-based Device Models

Auteurs: Carmine Paolino, Alessio Antolini, Fabio Pareschi, Mauro Mangia, Riccardo Rovatti, Eleonora Franchi Scarselli, Gianluca Setti, Roberto Canegallo, Marcella Carissimi, Marco Pasotti
Publié dans: 2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022, Page(s) 1536-1540
Éditeur: IEEE
DOI: 10.1109/iscas48785.2022.9937856

Privacy-preserving Social Distance Monitoring on Microcontrollers with Low-Resolution Infrared Sensors and CNNs

Auteurs: Chen Xie, Francesco Daghero, Yukai Chen∗, Marco Castellano, Luca Gandol, Andrea Calimera, Enrico Macii, Massimo Poncino, Daniele Jahier Pagliari
Publié dans: 2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022
Éditeur: IEEE
DOI: 10.48550/arxiv.2204.10541

Ferroelectric HfO2/ZrO2 Superlattices with Improved Leakage at Bias and Temperature Stress

Auteurs: David Lehninger, Ayse S¨unb¨ul, Ricardo Olivo, Thomas K¨ampfe, Konrad Seidel, Maximilian Lederer
Publié dans: 2023 IEEE International Memory Workshop (IMW), 2023
Éditeur: IEEE
DOI: 10.1109/imw56887.2023.10145927

End-to-end modelling of variability-aware neural networks based on resistive-switching memory arrays

Auteurs: A. Glukhov, N. Lepri, V. Milo, A. Baroni, C. Zambelli, P. Olivo, E. Pérez, C. Wenger and D. Ielmini
Publié dans: 2022 IFIP/IEEE 30th International Conference on Very Large Scale Integration (VLSI-SoC), 2022, pp. 1-5, 2022
Éditeur: IEEE
DOI: 10.1109/vlsi-soc54400.2022.9939653

A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes

Auteurs: Konrad Seidel, David Lehninger, Sukhrob Abdulazhanov, Ayse Sünbül, Raik Hoffmann, Katrin Zimmermann, Nandakishor Yadav, Quang Huy Le, Matthias Landwehr, Andreas Heinig, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Maximilian Lederer
Publié dans: 2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM), Dresden, Germany, 2023, pp. 1-3, 2023
Éditeur: IEEE
DOI: 10.1109/iitc/mam57687.2023.10154868

Hafnium oxide-based Ferroelectric Memories: Are we ready for Application?

Auteurs: Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann Sourav De, Thomas Kämpfe, Maximilian Lederer
Publié dans: 2023 IEEE International Memory Workshop (IMW, 2023
Éditeur: IEEE
DOI: 10.1109/imw56887.2023.10145945

A Charge Pump System with Controlled Input Impedance for Optimized RFID Energy Harvesting

Auteurs: Rohit Kesharwani, André Jäger, Martin Grabmann, David Schreiber, Georg Gläser, Hani Abdullah, Eric Schäfer
Publié dans: 2024 IEEE International Conference on RFID (RFID), 2024, Page(s) 1-6
Éditeur: IEEE
DOI: 10.1109/rfid62091.2024.10582749

Energy-efficient and Privacy-aware Social Distance Monitoring with Low-resolution Infrared Sensors and Adaptive Inference

Auteurs: Chen Xie, Daniele Jahier Pagliari, Andrea Calimera
Publié dans: 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 2022
Éditeur: IEEE
DOI: 10.1109/prime55000.2022.9816801

An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation

Auteurs: Alessio Antolini, Andrea Lico, Eleonora Franchi Scarselli, Antonio Gnudi, Luca Perilli, Mattia Luigi Torres, Marcella Carissimi, Marco Pasotti, Roberto Antonio Canegallo
Publié dans: ESSCIRC 2022: IEEE 48th European Solid-State Circuits Conference, 2022
Éditeur: IEEE
DOI: 10.1109/esscirc55480.2022.9911447

ASIL-D Automotive-Grade Microcontroller in 28nm FD-SOI with Full-OTA Capable 21MB Embedded PCM Memory and Highly Scalable Power Management.

Auteurs: N. Grossier, F. Disegni, A. Ventre, A. Barcella, R. Mariani, V. Marino, S. Mazzara, A.Scavuzzo, M. Bansal, S. Balwinder, A. Anand, S. Banzal, D. Joshi, R. Narwal, M. Niranjani, K. Trivedi, P.Ferreira, R. Ranica, L. Vullo, A. Cathelin, A. Maurelli, S. Pezzini and M. Peri,
Publié dans: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, 2023, pp. 1-2,, 2023, ISSN 2158-9682
Éditeur: IEEE
DOI: 10.23919/vlsitechnologyandcir57934.2023.10185252

RIDNet Assisted cGAN Based Channel Estimation for One-Bit ADC mmWave MIMO Systems

Auteurs: Erhan Karakoca, Hasan Nayir, Ali Görçin, Khalid Qaraqe
Publié dans: 2023 IEEE 97th Vehicular Technology Conference (VTC2023-Spring), 2023, Page(s) 1-6
Éditeur: IEEE
DOI: 10.1109/vtc2023-spring57618.2023.10199774

Channel Estimation Using RIDNet Assisted OMP for Hybrid-Field THz Massive MIMO Systems

Auteurs: Hasan Nayir, Erhan Karakoca, Ali Görçin, Khalid Qaraqe
Publié dans: ICC 2023 - IEEE International Conference on Communications, 2024, Page(s) 2625-2630
Éditeur: IEEE
DOI: 10.1109/icc45041.2023.10279560

Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators

Auteurs: A. Glukhov, V. Milo, A. Baroni, N. Lepri, C. Zambelli, P. Olivo, E. Perez, C. Wenger and D. Ielmini
Publié dans: 2022 IEEE International Reliability Physics Symposium (IRPS) 3C3-1-3C3-7 (2022)., 2022
Éditeur: IEEE
DOI: 10.1109/irps48227.2022.9764497

Conductive Filament Stabilization in Oxygen Engineered Hafnium and Yttrium Oxide‐based RRAM Devices Revealed by Low‐frequency Noise Studies

Auteurs: E. Piros, M. Lonsky, S. Petzold, A. Zintler, N. Kaiser, T. Vogel, R. Eilhardt, S. U. Sharath, E. Jalaguier, E. Nolot, C. Charpin-Nicolle, C. Wenger, L. Molina-Luna, J. Müller and L. Alff
Publié dans: 4th International Conference on Memristive Materials, Devices & Systems (Memrisys) 2021, 2021
Éditeur: Memrisys

Measurement-based Channel Characterization for A2A and A2G Wireless Drone Communication Systems

Auteurs: U. Erdemir, B. Kaplan, I. Hökelek, A. Görçin, H. A. Çırpan
Publié dans: IEEE VTC 2023 Spring, 2023
Éditeur: IEEE
DOI: 10.48550/arxiv.2306.08474

Measurement-based Characterization of Physical Layer Security for RIS-assisted Wireless Systems

Auteurs: S. Keşir, S. Kayraklık, I. Hökelek, A. E. Pusane, E. Başar, A. Görçin
Publié dans: IEEE VTC 2023 Spring, 2023
Éditeur: IEEE
DOI: 10.48550/arxiv.2212.07254

Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer

Auteurs: Konrad Seidel; David Lehninger; Raik Hoffmann; Tarek Ali; Maximilian Lederer; Ricardo Revello; Konstantin Mertens; Kati Biedermann; Yukai Shen Defu Wang,Matthias Landwehr, Andreas Heinig, Thomas Kämpfe, Hannes Mähne, Kerstin Bernert, Steffen Thiem,
Publié dans: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022
Éditeur: IEEE
DOI: 10.1109/vlsitechnologyandcir46769.2022.9830141

Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors

Auteurs: Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kampfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng
Publié dans: 2024 IEEE International Reliability Physics Symposium (IRPS), 2024, Page(s) 1-5
Éditeur: IEEE
DOI: 10.1109/irps48228.2024.10529302

HW-SW Optimization of DNNs for Privacy-Preserving People Counting on Low-Resolution Infrared Arrays

Auteurs: Matteo Risso, Chen Xie, Francesco Daghero, Alessio Burrello, Seyedmorteza Mollaei, Marco Castellano, Enrico Macii, Massimo Poncino, Daniele Jahier Pagliari
Publié dans: 2024 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2024, Page(s) 1-6
Éditeur: IEEE
DOI: 10.23919/date58400.2024.10546798

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement

Auteurs: C. Laguna, M. Bernard, J. Garrione, N. Castellani, V. Meli, S. Martin, F. Aussenac, D. Rouchon, N. Rochat, E. Nolot, G. Bourgeois, M. C. Cyrille, L. Militaru, A. Souifi, F. Andrieu and G. Navarro
Publié dans: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022
Éditeur: IEEE
DOI: 10.1109/essderc55479.2022.9947186

Phase-change memory cells characterization in an analog in-memory computing perspective

Auteurs: Alessio Antolini , Andrea Lico, Eleonora Franchi Scarselli, Marcella Carissimi, Marco Pasotti
Publié dans: 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 2022
Éditeur: IEEE xplore
DOI: 10.1109/prime55000.2022.9816788

Drift-Tolerant Implementation of a Neural Network on a PCM-Based Analog In-Memory Computing Unit for Motor Control Applications

Auteurs: F. Zavalloni, A. Antolini, M. L. Torres, A. Nicolosi, F. D'Angelo, A. Lico, E. Franchi Scarselli, M. Pasotti
Publié dans: 2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 2024, Page(s) 1-4
Éditeur: IEEE
DOI: 10.1109/prime61930.2024.10559681

Vers une éthique processuelle de l'IA

Auteurs: Eric Pardoux, Louis Devillaine
Publié dans: Conférence Nationale en Intelligence Artificielle 2022 (CNIA 2022), 2022
Éditeur: Conférence Nationale en Intelligence Artificielle

Enhanced Thermal Confinement in Phase-Change Memory Targeting Current Reduction

Auteurs: C. De Camaret, G. Bourgeois, O. Cueto, V. Meli, S. Martin, D. Despois, V. Beugin, N. Castellani, M.C. Cyrille, F. Andrieu, J. Arcamone, Y. Le-Friec and G. Navarro
Publié dans: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022
Éditeur: IEEE
DOI: 10.1109/essderc55479.2022.9947190

Indoor Coverage Enhancement for RIS-Assisted Communication Systems: Practical Measurements and Efficient Grouping

Auteurs: S. Kayraklık, I. Yıldırım, Y. Gevez, E. Başar, A. Görçin
Publié dans: IEEE ICC 2023, 2023
Éditeur: IEEE
DOI: 10.48550/arxiv.2211.07188

Compressed sensing by phase change memories: Coping with encoder non-linearities

Auteurs: Paolino Carmine, Antolini Alessio, Pareschi Fabio, Mangia Mauro, Rovatti Riccardo, Franchi Scarselli Eleonora, Gnudi Antonio, Setti Gianluca, Canegallo Roberto, Carissimi Marcella, Pasotti Marco
Publié dans: 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021, ISSN 2158-1525
Éditeur: IEEE
DOI: 10.1109/iscas51556.2021.9401176

TiTe/Ge2Sb2Te5 Bi-layer-based Phase-Change Memory Targeting Storage Class Memory

Auteurs: G. Lama, M. Bernard, J. Garrione, N. Castellani, G. Bourgeois, M.C. Cyrille, F. Andrieu and G. Navarro
Publié dans: 2022
Éditeur: IEEE
DOI: 10.1109/essderc55479.2022.9947157

Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability

Auteurs: T. Ali; R. Olivo; S. Kerdilès; D. Lehninger; M. Lederer; D. Sourav; A-S. Royet; A. Sünbül; A. Prabhu; K. Kühnel; M. Czernohorsky, M. Rudolph; R. Hoffmann; C. Charpin-Nicolle; L. Grenouillet; T. Kämpfe; K. Seidel
Publié dans: 2022 IEEE International Memory Workshop (IMW), 2022, pp. 1-4,, 2022
Éditeur: IEEE Xplore
DOI: 10.1109/imw52921.2022.9779281

A Bit-Line Biasing Circuit for Analog In-Memory Computing Based on Phase Change Memory

Auteurs: A. Lico, A. Antolini, F. Zavalloni, E. Franchi Scarselli, R. Zurla, M. Pasotti
Publié dans: 2024 19th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), Numéro 15, 2024, Page(s) 1-4
Éditeur: IEEE
DOI: 10.1109/prime61930.2024.10559693

An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Features addressing Non-linearity and Time Drift Compensation

Auteurs: Alessio Antolini (IUNET-UNIBO) , Andrea Lico (IUNET-UNIBO), Eleonora Franchi Scarselli (IUNET-UNIBO), Antonio Gnudi (IUNET-UNIBO), Luca Perilli (IUNET-UNIBO), Marcella Carissimi (ST-I), Marco Pasotti (ST-I) and Roberto Antonio Canegallo (ST-I)
Publié dans: ESSCIRC 2022 - https://www.esscirc-essderc2022.org/, 2022
Éditeur: ESSCIRC

Load Weight Estimation in Washing Machine Using Soft Sensors with Machine Learning Techniques

Auteurs: Murat Delibalta, İsmail Bilgen, F. Canan Pembe, Erman Kiremit, Hilal İrkil, Mehmet Haklıdır
Publié dans: 2023 31st Signal Processing and Communications Applications Conference (SIU), 2023, Page(s) 1-4
Éditeur: IEEE
DOI: 10.1109/siu59756.2023.10224011

MindReader: Unsupervised Classification of Electroencephalographic Data

Auteurs: Rivas-Carrillo, Salvador Daniel, Akkuratov, Evgeny E., Valdez Ruvalcaba, Hector, Vargas-Sanchez, Angel, Komorowski, Jan, San-Juan, Daniel, Grabherr, Manfred G.
Publié dans: Sensors 2023, 23(6), 2971, 2023, ISSN 1424-8220
Éditeur: MDPI
DOI: 10.3390/s23062971

Feature Attention Based Blind Denoising Network for mmWave Beamspace Channel Estimation

Auteurs: Erhan Karakoca, Hasan Nayir,Ali Görçin, Khalid Qaraqe
Publié dans: 2022 IEEE Globecom Workshops (GC Wkshps): Workshop on Emerging Topics in 6G Communications-page 1555-1560, 2022
Éditeur: IEEE
DOI: 10.1109/gcwkshps56602.2022.10008723

Peer reviewed articles (42)

RSS-Based Wireless LAN Indoor Localization and Tracking Using Deep Architectures

Auteurs: Muhammed Zahid Karakusak ,Hasan Kivrak,Hasan Fehmi Ates, Mehmet Kemal Ozdemir
Publié dans: Big Data Cogn. Comput 2022, 6(3), 84, 2022, ISSN 2504-2289
Éditeur: MDPI
DOI: 10.3390/bdcc6030084

Efficient Deep Learning Models for Privacy-preserving People Counting on Low-resolution Infrared Arrays

Auteurs: Chen Xie, Francesco Daghero, Yukai Chen, Marco Castellano, Luca Gandolfi, Andrea Calimera, Enrico Macii, Massimo Poncino, Daniele Jahier Pagliari
Publié dans: IEEE Internet of Things Journal, 2023, ISSN 2327-4662
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jiot.2023.3263290

2022 Roadmap on Neuromorphic Computing and Engineering

Auteurs: Dennis V Christensen, Regina Dittmann, Bernabe Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J Quill, Scott T Keene, Alberto Salleo, Julie Grollier, Danijela Marković, Alice Mizrahi, Peng Yao, J Joshua Yang, Giacomo Indi
Publié dans: Neuromorph. Comput. Eng. 2 022501, 2022, ISSN 2634-4386
Éditeur: IOP Publishing Ltd
DOI: 10.1088/2634-4386/ac4a83

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

Auteurs: Nico Kaiser; Tobias Vogel; Alexander Zintler; Stefan Petzold; Alexey Arzumanov; Eszter Piros; Robert Eilhardt; Leopoldo Molina-Luna; Lambert Alff
Publié dans: ACS Appl. Mater. Interfaces 2022, 14, 1, 1290–1303, Numéro 2, 2021, ISSN 1944-8244
Éditeur: American Chemical Society
DOI: 10.1021/acsami.1c09451

Enhanced Conductivity and Microstructure in Highly Textured TiN1−x/c‑Al2O3 Thin Films

Auteurs: Alexander Zintler, Robert Eilhardt, Stefan Petzold, Sankaramangalam Ulhas Sharath, Enrico Bruder, Nico Kaiser, Lambert Alff, and Leopoldo Molina-Luna
Publié dans: ACS Omega 2022, 7, 2041−2048, Numéro 24701343, 2022, ISSN 2470-1343
Éditeur: American Chemical Society
DOI: 10.1021/acsomega.1c05505

Ferroelectric FETs With Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio

Auteurs: David Lehninger, Raik Hoffmann; Ayse Sünbül; Hannes Mähne; Thomas Kämpfe; Kerstin Bernert; Steffen Thiem; Konrad Seidel
Publié dans: IEEE Electron Device Letters ( Volume: 43, Numéro: 11, November 2022), 2022, ISSN 1558-0563
Éditeur: IEEE
DOI: 10.1109/led.2022.3204360

A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking

Auteurs: Alessio Antolini, Andrea Lico, Francesco Zavalloni, Eleonora Franchi Scarselli, Antonio Gnudi, Mattia Luigi Torres, Roberto Canegallo, Marco Pasotti
Publié dans: IEEE Open Journal of the Solid-State Circuits Society, Numéro 4, 2024, Page(s) 69-82, ISSN 2644-1349
Éditeur: IEEE
DOI: 10.1109/ojsscs.2024.3432468

Texture Transferin Dielectric Layers via Nanocrystalline Networks:Insights from in Situ 4D-STEM

Auteurs: Robert Winkler, Alexander Zintler, Oscar Recalde-Benitez, Tianshu Jiang, Déspina Nasiou, Esmaeil Adabifiroozjaei, Philipp Schreyer, Taewook Kim, Eszter Piros, Nico Kaiser, Tobias Vogel, Stefan Petzold, Lambert Alff, and Leopoldo Molina-Luna
Publié dans: Nano Lett. 2024, 24, 10, 2998–3004, 2024, ISSN 1530-6992
Éditeur: ACS publications
DOI: 10.1021/acs.nanolett.3c03941

An Energy-efficient In-Memory Computing Architecture for Survival Data Analysis based on Resistive Switching Memories (RRAM)

Auteurs: A. Baroni, A. Glukhov, E. Pérez, C. Wenger, E. Calore, S. F. Schifano, P. Olivo, D. Ielmini and C. Zambelli
Publié dans: Front. Neurosci. 16:932270, 2022, ISSN 1662-453X
Éditeur: Frontiers Media S.A
DOI: 10.3389/fnins.2022.932270

Ge Content Optimization in Ge(SbSe)N OTS Materials for Selector Applications

Auteurs: C. Laguna , M. Bernard, F. Fillot, D. Rouchon, N. Rochat, J. Garrione, L. Prazakova, E. Nolot, V. Meli, N. Castellani, S. Martin, C. Sabbione, G. Bourgeois , M.C. Cyrille, L. Militaru, A. Souifi, F. Andrieu, G. Navarro
Publié dans: IEEE Transactions on Electron Devices, 2022, ISSN 1557-9646
Éditeur: IEEE
DOI: 10.1109/ted.2022.3203368

Fluorite-Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices

Auteurs: Faizan Ali,Tarek Ali,David Lehninger,Ayse Sünbül,Alison Viegas,Ridham Sachdeva,Akmal Abbas,Malte Czernohorsky,Konrad Seidel
Publié dans: Adv. Funct. Mater. 2022, 2201737, Numéro 1616301X, 2022, ISSN 1616-301X
Éditeur: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202201737

Controlling the Formation of Conductive Pathways in Memristive Devices

Auteurs: Robert Winkler, Alexander Zintler, Stefan Petzold, Eszter Piros, Nico Kaiser, Tobias Vogel, Déspina Nasiou, Keith P. McKenna, Leopoldo Molina-Luna, Lambert Alff
Publié dans: Advanced Science 2022, 2198-3844, 2201806, 2022, ISSN 2198-3844
Éditeur: Wiley online library
DOI: 10.1002/advs.202201806

Multilayered Sb-Rich GeSbTe Phase-Change Memory for Best Endurance and Reduced Variability

Auteurs: Giusy Lama, M. Bernard, G. Bourgeois , J. Garrione, V. Meli, N. Castellani, C. Sabbione , L. Prazakova , D. Fernandez Rodas, E. Nolot, M.C. Cyrille, F. Andrieu, G. Navarro
Publié dans: IEEE Transactions on Electron Devices, 2022, ISSN 1557-9646
Éditeur: IEEE
DOI: 10.1109/ted.2022.3184659

Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks

Auteurs: Fernando Leonel Aguirre, Eszter Piros, Nico Kaiser, Tobias Vogel, Stephan Petzold, Jonas Gehrunger, Timo Oster, Christian Hochberger, Jordi Suñé, Lambert Alff and Enrique Miranda
Publié dans: Micromechanics, 2022, ISSN 2072-666X
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/mi13112002

Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell

Auteurs: Fadi Jebali,Atreya Majumdar,Clément Turck, Kamel-Eddine Harabi, Mathieu-Coumba Faye,Eloi Muhr, Jean-Pierre Walder, Oleksandr Bilousov,Amadéo Michaud,Elisa Vianello , Tifenn Hirtzlin, François Andrieu, Marc Bocquet,Stéphane Collin, Damien Querlioz & Jean-Michel Portal
Publié dans: Nature Communications | (2024)15:741, 2024, ISSN 2041-1723
Éditeur: Nature Publishing Group
DOI: 10.1038/s41467-024-44766-6

Indoor Measurements for RIS-Aided Communication: Practical Phase Shift Optimization, Coverage Enhancement, and Physical Layer Security

Auteurs: Sefa Kayraklik, Ibrahim Yildirim, Ibrahim Hokelek, Yarkin Gevez, Ertugrul Basar, Ali Gorcin
Publié dans: IEEE Open Journal of the Communications Society, Numéro 5, 2024, Page(s) 1243-1255, ISSN 2644-125X
Éditeur: IEEE
DOI: 10.1109/ojcoms.2024.3363423

Impact of Ferroelectric Layer Thickness on Reliability of Back-End-of-Line-Compatible Hafnium Zirconium Oxide Films

Auteurs: Ayse Sünbül, David Lehninger, Raik Hoffmann, Ricardo Olivo, Aditya Prabhu, Fred Schöne, Kati Kühnel, Moritz Döllgast, Nora Haufe, Lisa Roy, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng
Publié dans: Adv. Eng. Mater.2022, 2201124, Numéro 15272648, 2022, ISSN 1527-2648
Éditeur: Wiley Online Libray
DOI: 10.1002/adem.202201124

Impact of Non-Stoichiometric Phases and Grain Boundarieson the Nanoscale Forming and Switching of HfOxThinFilms

Auteurs: Niclas Schmidt, Nico Kaiser, Tobias Vogel, Eszter Piros, Silvia Karthäuser, Rainer Waser,Lambert Alff, and Regina Dittmann
Publié dans: Advanced Electronic Materials 2024, 2300693, 2024, ISSN 2199-160X
Éditeur: Wiley Online Library
DOI: 10.1002/aelm.202300693

Exploring Deep Learning for Adaptive Energy Detection Threshold Determination: A Multistage Approach

Auteurs: Bedir, Oguz, Ali Riza Ekti, and Mehmet Kemal Ozdemir.
Publié dans: 2023 Electronics 12, no. 19: 4183., 2023, ISSN 2079-9292
Éditeur: MDPI
DOI: 10.3390/electronics12194183

A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High-Temperature Annealing

Auteurs: A. Sünbül, D. Lehninger, M. Lederer, H. Mähne, R. Hoffmann, K. Bernert, S. Thiem, F. Schöne, M. Döllgast, N. Haufe, L. Roy, T. Kämpfe, K. Seidel, and L.M. Eng
Publié dans: Phys. Status Solidi A2023,220, 2300067, 2023, ISSN 1862-6319
Éditeur: Wiley online library
DOI: 10.1002/pssa.202300067

Practical Implementation of RIS-Aided Spectrum Sensing: A Deep-Learning-Based Solution

Auteurs: Sefa Kayraklik, Ibrahim Yildirim, Ertugrul Basar, Ibrahim Hokelek, Ali Gorcin
Publié dans: IEEE Systems Journal, Numéro 18, 2024, Page(s) 1481-1488, ISSN 1932-8184
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/jsyst.2024.3376986

Review on the Microstructure of Ferroelectric Hafnium Oxides

Auteurs: Lederer, M., Lehninger, D., Ali, T. and Kämpfe, T.
Publié dans: Phys. Status Solidi RRL, 16: 2200168., 2022, ISSN 1862-6270
Éditeur: Wiley online library
DOI: 10.1002/pssr.202200168

1S1R Optimization for High‐Frequency Inference on Binarized Spiking Neural Networks

Auteurs: Joel Minguet Lopez, Quentin Rafhay, Manon Dampfhoffer, Lucas Reganaz, Niccolo Castellani, Valentina Meli, Simon Martin, Laurent Grenouillet, Gabriele Navarro, Thomas Magis, Catherine Carabasse, Tifenn Hirtzlin, Elisa Vianello, Damien Deleruyelle, Jean‐Michel Portal, Gabriel Molas, François Andrieu
Publié dans: Advanced Electronic Materials, Numéro 8, 2023, ISSN 2199-160X
Éditeur: Wiley online library
DOI: 10.1002/aelm.202200323

Simulation of the effect of material properties on yttrium oxide memristor-based artificial neural networks

Auteurs: F Aguirre, E Piros, N Kaiser, T Vogel, S Petzold, J Gehrunger, T Oster, K Hofmann, C Hochberger, J Suñé, L Alff, E Miranda
Publié dans: APL Machine Learning, 2023, ISSN 2770-9019
Éditeur: AIP Publishing
DOI: 10.1063/5.0143926

Cyber-WISE: A Cyber-Physical Deep Wireless Indoor Positioning System and Digital Twin Approach

Auteurs: Muhammed Zahid Karakusak, Hasan Kivrak , Simon Watson and Mehmet Kemal Ozdemir
Publié dans: Sensors 2023, 23, 9903, 2023, ISSN 1424-8220
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/s23249903

Multi-user directional modulation with reconfigurable holographic surfaces

Auteurs: M. Yaser Yağan, Samed Keşir, İbrahim Hökelek, Ali E. Pusane, Ali Görçin
Publié dans: EURASIP Journal on Wireless Communications and Networking, Numéro 2024, 2024, ISSN 1687-1499
Éditeur: Springer Nature
DOI: 10.1186/s13638-024-02383-3

Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices

Auteurs: Taewook Kim, Tobias Vogel, Eszter Piros, Déspina Nasiou, Nico Kaiser, Philipp Schreyer, Robert Winkler, Alexander Zintler, Alexey Arzumanov, Stefan Petzold, Leopoldo Molina-Luna, Lambert Alff
Publié dans: Appl. Phys. Lett. 122, 023502 (2023), 2023, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0124781

Toward Energy‐Efficient Ferroelectric Field‐Effect Transistors and Ferroelectric Random Access Memories: Tailoring the Coercive Field of Ferroelectric HfO₂ Films

Auteurs: David Lehninger, Ayse Sünbül, Konrad Seidel, Maximilian Lederer
Publié dans: physica status solidi (a), Numéro 221, 2024, ISSN 1862-6300
Éditeur: Wiley - V C H Verlag GmbbH & Co.
DOI: 10.1002/pssa.202300712

Doped and undoped ferroelectric HfO2: Role of Gd-doping in stabilizing the ferroelectric phase

Auteurs: L. Alrifai, E. V. Skopin, N. Guillaume, P. Gonon, A. Bsiesy
Publié dans: Applied Physics Letters, Numéro 123, 2023, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0151257

Integration of ferroelectric devices for advanced in-memory computing concepts

Auteurs: Konrad Seidel, David Lehninger, Ayse Sünbül, Raik Hoffmann, Ricardo Revello, Nandakishor Yadav, Alptekin Vardar, Matthias Landwehr, Andreas Heinig, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe and Maximilian Lederer
Publié dans: 2024 Jpn. J. Appl. Phys, Numéro 63, 2024, Page(s) 050802, ISSN 1347-4065
Éditeur: IOP Science
DOI: 10.35848/1347-4065/ad3ce2

Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices

Auteurs: F. L. Aguirre, E. Piros, N. Kaiser , T. Vogel , S. Petzold, J. Gehrunger, C. Hochberger, T. Oster, K. Hofmann, J. Suñé, E. Miranda & L. Alff
Publié dans: Scientific reports 2024, 14, 1122, 2024, ISSN 2045-2322
Éditeur: Nature Publishing Group
DOI: 10.1038/s41598-023-49924-2

Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

Auteurs: Ayse Sünbül, David Lehninger, Amir Pourjafar, Shouzhuo Yang, Franz Müller, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Lukas Eng, Maximilian Lederer
Publié dans: Memories - Materials, Devices, Circuits and Systems, Numéro 8, 2024, Page(s) 100110, ISSN 2773-0646
Éditeur: Elsevier BV
DOI: 10.1016/j.memori.2024.100110

Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks

Auteurs: A. Baroni, A. Glukhov, E. Perez, C. Wenger, D. Ielmini, P. Olivo and C. Zambelli
Publié dans: IEEE Transactions on Device and Materials Reliability, vol. 22, no. 3, pp. 340-347, Sept. 2022, 2022, ISSN 1530-4388
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tdmr.2022.3182133

Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

Auteurs: David Lehninger, Aditya Prabhu, Ayse Sünbül, Tarek Ali, Fred Schöne, Thomas Kämpfe, Kati Biedermann, Lisa Roy, Konrad Seidel, Maximilian Lederer, Lukas M. Eng
Publié dans: Adv. Physics Res.2023, 2023, ISSN 2751-1200
Éditeur: Wiley Online Library
DOI: 10.1002/apxr.202200108

Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia

Auteurs: M. Lederer, T. Vogel, T. Kämpfe, N. Kaiser, E. Piros, R. Olivo, T. Ali, S. Petzold, D. Lehninger, C. Trautmann, L. Alff, K. Seidel
Publié dans: Journal of Applied Physics 132, 064102 (2022), Numéro 10897550, 2022, ISSN 1089-7550
Éditeur: AIP Publishing
DOI: 10.1063/5.0098953

Sub 10-nm ferroelectric Gd-doped HfO2 Layers

Auteurs: E.V. Skopin, N. Guillaume, L. Alrifai, P. Gonon, and A. Bsiesy
Publié dans: Appl. Phys. Lett. 120, 172901 (2022), Numéro 00036951, 2022, ISSN 0003-6951
Éditeur: American Institute of Physics
DOI: 10.1063/5.0088505

Crystal and electronic structure of oxygen vacancy stabilized rhombohedral hafnium oxide

Auteurs: Nico Kaiser, Eszter Piros, Philipp Schreyer, Taewook Kim, Stefan Petzold, Roser Valenti, Youngjoon Song, Tobias Vogel, Lambert Alff
Publié dans: ACS Applied Electronic Materials, 2023, ISSN 2637-6113
Éditeur: ACS Publications
DOI: 10.1021/acsaelm.2c01255

Decoding Algorithms and HW Strategies to Mitigate Uncertainties in a PCM-based Analog Encoder for Compressed Sensing

Auteurs: Carmine Paolino, Alessio Antolini, Francesco Zavalloni, Andrea Lico, Eleonora Franchi Scarselli, Mauro Mangia, Alex Marchioni, Fabio Pareschi, Gianluca Setti, Riccardo Rovatti, Mattia Luigi Torres, Marcella Carissimi and Marco Pasotti
Publié dans: J. Low Power Electron. Appl. 2023, 13(1), 17;, 2023, ISSN 2079-9268
Éditeur: Multidisciplinary Digital Publishing Institute (MDPI)
DOI: 10.3390/jlpea13010017

Effect of TiN electrodes and Gd-doping on HfO2 structural properties

Auteurs: M. M. Abdallah, E. V. Skopin, F. Fillot, D. Constantin, M. Abusaa, A. Bsiesy
Publié dans: Journal of Applied Physics, Numéro 136, 2024, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/5.0239456

Combined HW/SW Drift and Variability Mitigation for PCM-Based Analog In-Memory Computing for Neural Network Applications

Auteurs: Alessio Antolini, Carmine Paolino, Francesco Zavalloni, Andrea Lico, Eleonora Franchi Scarselli, Mauro Mangia, Fabio Pareschi, Gianluca Setti, Riccardo Rovatti, Mattia Luigi Torres, Marcella Carissimi, Marco Pasotti
Publié dans: IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 13, no. 1, pp. 395-407, March 2023,, 2023, ISSN 2156-3357
Éditeur: IEEE Circuits and Systems Society
DOI: 10.1109/jetcas.2023.3241750

Structural and electrical response of emerging memories exposed to heavy ion radiation

Auteurs: Tobias Vogel, Alexander Zintler, Nico Kaiser, Nicolas Guillaume, Gauthier Lefèvre, Maximilian Lederer, Anna Lisa Serra, Eszter Piros, Taewook Kim, Philipp Schreyer, Robert Winkler, Déspina Nasiou, Ricardo Revello Olivo, Tarek Ali, David Lehninger, Alexey Arzumanov, Christelle Charpin-Nicolle, Guillaume Bourgeois, Laurent Grenouillet, Marie-Claire Cyrille, Gabriele Navarro, Konrad Seidel, Thomas
Publié dans: ACS Nano 2022, 16, 9, 14463–14478, Numéro 1936086X, 2022, ISSN 1936-086X
Éditeur: ACS publications
DOI: 10.1021/acsnano.2c04841

A generalizable, uncertainty-aware neural network potential for GeSbTe with Monte Carlo dropout

Auteurs: Sung-Ho Lee, Valerio Olevano, Benoit Sklénard
Publié dans: Solid-State Electronics Volume 199, January 2023, 108508, 2023, ISSN 0038-1101
Éditeur: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108508

Other (8)

Xilinx Vitis AI ‘facedetect’ Demo on Trenz Electronic board TE0808 SoM + TEBF0808 Carrier

Auteurs: Zdeněk Pohl, Lukáš Kohout, Jiří Kadlec
Publié dans: 2022
Éditeur: UTIA

Fast Bayesian Algorithms for FPGA Platforms

Auteurs: Raissa Likhonina
Publié dans: 2022
Éditeur: UTIA

The Autonomous Era in Construction: 5G Unleashing Smart Technologies

Auteurs: Seda Gavas
Publié dans: 2024
Éditeur: Turkcell

Integration of labeled 4D-STEM SPED data for confirmation of phase identification

Auteurs: T. Vogel, A. Zintler, N. Kaiser, N. Guillaume, G. Lefèvre, M. Lederer, A. L. Serra, E. Piros, T. Kim, P. Schreyer, R. Winkler, D. Nasiou, R. R. Olivo, T. Ali, D. Lehninger, A. Arzumanov, C. Charpin-Nicolle, G. Bourgeois, L. Grenouillet, MC. Cyrille, G. Navarro, K. Seidel, T. Kämpfe, S. Petzold, C. Trautmann, L. Molina-Luna, L. Alff
Publié dans: Open Repository TuDatalib 2022, 2022
Éditeur: TU Darmstadt
DOI: 10.48328/tudatalib-896

Testing all Samples from Xilinx Vitis AI Library 2.0 on Trenz Electronic board TE0808 SoM + TEBF0808 Carrier

Auteurs: Zdeněk Pohl, Lukáš Kohout, Jiří Kadlec
Publié dans: 2022
Éditeur: UTIA

Xilinx Vitis AI ‘facedetect’ and ‘resnet50’ Demo on Trenz Electronic TE0821-01-2cg-4GB SoM + TE0706-3 Carrier

Auteurs: Zdeněk Pohl, Lukáš Kohout, Jiří Kadlec
Publié dans: 2022
Éditeur: UTIA

Reading Reliability in 1S1R OTS+PCM Devices Based on Double-Patterned Self-Aligned Structure

Auteurs: R. Antonelli, G. Bourgeois, V. Meli, Z. Saghi, T. Monniez, S. Martin, N. Castellani, M. Bernard, L. Fellouh, A. Salvi, S. Gout, F. Andrieu, A. Souifi, G. Navarro
Publié dans: 2024
Éditeur: HAL

All VART Examples from Xilinx Vitis AI 2.0 for Trenz Electronic board TE0808 SoM + TEBF0808 Carrier

Auteurs: Zdeněk Pohl, Lukáš Kohout, Jiří Kadlec
Publié dans: 2022
Éditeur: UTIA

Book chapters (1)

A Binary Pattern Matching Task Performed in an ePCM-Based Analog In-Memory Computing Unit

Auteurs: Francesco Zavalloni, Alessio Antolini, Andrea Lico, Eleonora Franchi Scarselli, Mattia Luigi Torres, Riccardo Zurla, Marco Pasotti
Publié dans: Lecture Notes in Electrical Engineering, Proceedings of SIE 2023, 2023, Page(s) 3-11
Éditeur: Springer Nature Switzerland
DOI: 10.1007/978-3-031-48711-8_1