Periodic Reporting for period 1 - PATTERN (Next generation ultra-high-speed microwave Photonic integrATed circuiTs using advancE hybRid iNtegration)
Okres sprawozdawczy: 2022-09-01 do 2024-02-29
PATTERN combines four different material platforms, InP, LNOI and Yttrium Iron Garnet (YIG) for photonics and silicon for electronics with a massive hybrid integration effort to cover the complete PIC value chain from components to complete systems. Particularly in PATTERN we propose:
• Development of new advanced PIC building blocks bringing new functionalities to PIC: Integrated magneto-optics (MO) isolators using the hybrid integration of LNOI and YIG, Acousto-optics modulators (AOMs) in LNOI platform
• Developing world first process design kit (PDK) and assembly design kit (ADK) for ultra-high speed microwave photonics at frequencies >100 GHz (including, LNOI modulators, InP detectors, RF packaging etc.)
• Co-integration of electronics and photonics especially for ultra-speed operations
• Development of an InP-LNOI hybrid fast tunable lasers with tuning speed below <1ns, wide tunability (>40 nm) and narrow-linewidth (<1 kHz)
• Development of 6 demonstrator prototypes by 3 end-users covering wide range of applications from quantum applications to RF-over fiber for 5G and 6G antennas, sub-terahertz wireless antenna and optical phase locked loops (OPLLs) and low noise microwave generation and space communication systems.
• Development of new advanced PIC building blocks bringing new functionalities to PIC: Integrated magneto-optics (MO) isolators using the hybrid integration of LNOI and YIG, Acousto-optics modulators (AOMs) in LNOI platform
• Developing world first process design kit (PDK) and assembly design kit (ADK) for ultra-high speed microwave photonics at frequencies >100 GHz (including, LNOI modulators, InP detectors, RF packaging etc.)
• Co-integration of electronics and photonics especially for ultra-speed operations
• Development of an InP-LNOI hybrid fast tunable lasers with tuning speed below <1ns, wide tunability (>40 nm) and narrow-linewidth (<1 kHz)
• Development of 6 demonstrator prototypes by 3 end-users covering wide range of applications from quantum applications to RF-over fiber for 5G and 6G antennas, sub-terahertz wireless antenna and optical phase locked loops (OPLLs) and low noise microwave generation and space communication systems.
Main results:
WP1:
Task 1.1
RF modulators: successfully demonstration of devices operating beyond 50 GHz with a Vpi.L of approximately 2.5 V.cm and shorter devices (2.2 mm long) with bandwidths exceeding 70 GHz but a higher DC Vpi of 12 V. These results are promising regarding the objective of reaching bandwidth of over 100 GHz and a half-wave voltage (V_π) of less than 1.5 V.
AOM Building blocks: materials characterizations that showed that it is necessary to work at frequencies higher than 3GHz, in line with the project objectives, to efficiently generate Rayleigh waves. SAW attenuation in thin film LiNb similar to that of bulk LiNb. First design of focusing electrodes.
Isolator: simulations to identify the optimal configuration for waveguides recovered with YIG and defined a possible isolator architecture. Chips made and sent to CNRS for subsequent steps.
hybrid InP‐LNOI laser: delay due to development of a reproducible and stable amorphous silicon deposition method. As mitigation, design for an edge-coupled gain section as a backup for µtransfer printing and to receive early feedback on the design of the laser cavity.
Polarization control: Not initially part of the proposal but identified as important. Simulations and manufacturing of test structures underway.
Task 1.2
Optical losses are not at the target level of 0.05dB/cm yet but reached state of the art. Improvement of gold line deposition that now have RF losses at state of the art.
Task 1.3:
Successful development of the ADK, the PDK and the automatic RF routing completed by a full set of RF components (capacitor, inductance, filters…) and a dedicated calibration kit. ADK added
New graphical interface so that the users can place their components, route them. The interface will generate the code that can them be further customized.
WP2:
T2.1: LNOI fabrication & process development:
Improvement of the LNOI stcak that now includes three types of waveguide, cladding, two metal layers, fully open VIAS. Third layer of metallization to come for metal pillars to flip-chip gain sections, photodiodes (PDs), and electronic ICs.
T2.2 optical isolator
One of the main obstacle, the growth of YIG and derived materials successfully and first time measurement of the Faraday rotation hysteresis cycles from garnets on LNOI.
T2.3: InP gain chips and fast PD developments
Refine strategy for InP component integration: µ-transfer printing only for gain sections, photodiodes either flip-chiped or edge-coupling depending on their speed. Mapping out of all required processing steps for transfer printing ongoing tests for the new ones. The fast waveguide integrated photodiodes (bandwidth >80 GHz) currently being characterized and prepared for shipment.
WP3:
PHIX reached in advance milestone MS11, achieving < 2.0 dB of losses per facet fiber-to-chip coupling.
T3.1: Hybrid integration of LNOI‐InP and Si electronics
Manufacturing of the InP gain coupons chips under way while processes for the tether material deposition and under etching are under definition. Successful manufacturing and tests of the passive components to build a monomode laser cavity except the optical vernier filters. Pb due to the loss of the ring resonators (under progress in WP2). While no Vernier rings are available yet, a multimode cavity is under development to validate the proof of concept of a heterogeneous lithium niobate / III-V lasers.
T3.1.2: flip-chip integration of LNOI with Si CMOS electronic and InP (photodiode)
Definition of a complete procedure for flip-chip bonding integration of CMOS electronic and commercially available photodiodes (up to 40GHz). First demonstration of successfully flip-chip bonding of two BiCMOS amplifiers onto LNOI PIC by using thermocompression bonding.
T3.2 progress:
Verification that mechanical polishing, for coupling losses lower than the reported 2dB/facet, is possible even if LN is known to be brittle. New set alignment marks included in the ADK.
First step toward edge-coupling of a miniature optical isolator device. 3D-printing of two standard-design collimating lenses/ Measurements of their optical insertion losses before insertion of the optical isolator.
T3.3 progress:
New strategy on the goldbox packaging above 100 GHz. Side-by-side connectors abandoned for in-line RF connections on the opposite edges: less losses (no 90-degree bends, shorter distances).
Tests on wire bonding showed that is not possible exceeding 70 GHz frequency. Other interconnection methods to be tested.
Discrete commercial RF termination resistors to be flip chip up to 70 GHz. Development of a more compact alternative approach that could operate beyond 100 GHz and embedded directly on the chip
WP4:
All partners defined the demo architectures and the building blocks specifications. They all submitted preliminary designs for tests, especially validating some of the required building block (ring resonator, TIA..).
WP5 : Project Management
Main results: submission of the all deliverables, addition of a new partner, finalization and signature of the Consortium Agreement.
WP6 : Roll-up banner, poster, website on line, LinkedIn page created (M1), Deliverable submitted on time except 6.12 PATTERN dissemination rules presented to project partners (KOM, M2); monitoring of compliance with the rules is ensured and continuously tracked by WP6 leader. PATTERN ZENODO community created.
WP1:
Task 1.1
RF modulators: successfully demonstration of devices operating beyond 50 GHz with a Vpi.L of approximately 2.5 V.cm and shorter devices (2.2 mm long) with bandwidths exceeding 70 GHz but a higher DC Vpi of 12 V. These results are promising regarding the objective of reaching bandwidth of over 100 GHz and a half-wave voltage (V_π) of less than 1.5 V.
AOM Building blocks: materials characterizations that showed that it is necessary to work at frequencies higher than 3GHz, in line with the project objectives, to efficiently generate Rayleigh waves. SAW attenuation in thin film LiNb similar to that of bulk LiNb. First design of focusing electrodes.
Isolator: simulations to identify the optimal configuration for waveguides recovered with YIG and defined a possible isolator architecture. Chips made and sent to CNRS for subsequent steps.
hybrid InP‐LNOI laser: delay due to development of a reproducible and stable amorphous silicon deposition method. As mitigation, design for an edge-coupled gain section as a backup for µtransfer printing and to receive early feedback on the design of the laser cavity.
Polarization control: Not initially part of the proposal but identified as important. Simulations and manufacturing of test structures underway.
Task 1.2
Optical losses are not at the target level of 0.05dB/cm yet but reached state of the art. Improvement of gold line deposition that now have RF losses at state of the art.
Task 1.3:
Successful development of the ADK, the PDK and the automatic RF routing completed by a full set of RF components (capacitor, inductance, filters…) and a dedicated calibration kit. ADK added
New graphical interface so that the users can place their components, route them. The interface will generate the code that can them be further customized.
WP2:
T2.1: LNOI fabrication & process development:
Improvement of the LNOI stcak that now includes three types of waveguide, cladding, two metal layers, fully open VIAS. Third layer of metallization to come for metal pillars to flip-chip gain sections, photodiodes (PDs), and electronic ICs.
T2.2 optical isolator
One of the main obstacle, the growth of YIG and derived materials successfully and first time measurement of the Faraday rotation hysteresis cycles from garnets on LNOI.
T2.3: InP gain chips and fast PD developments
Refine strategy for InP component integration: µ-transfer printing only for gain sections, photodiodes either flip-chiped or edge-coupling depending on their speed. Mapping out of all required processing steps for transfer printing ongoing tests for the new ones. The fast waveguide integrated photodiodes (bandwidth >80 GHz) currently being characterized and prepared for shipment.
WP3:
PHIX reached in advance milestone MS11, achieving < 2.0 dB of losses per facet fiber-to-chip coupling.
T3.1: Hybrid integration of LNOI‐InP and Si electronics
Manufacturing of the InP gain coupons chips under way while processes for the tether material deposition and under etching are under definition. Successful manufacturing and tests of the passive components to build a monomode laser cavity except the optical vernier filters. Pb due to the loss of the ring resonators (under progress in WP2). While no Vernier rings are available yet, a multimode cavity is under development to validate the proof of concept of a heterogeneous lithium niobate / III-V lasers.
T3.1.2: flip-chip integration of LNOI with Si CMOS electronic and InP (photodiode)
Definition of a complete procedure for flip-chip bonding integration of CMOS electronic and commercially available photodiodes (up to 40GHz). First demonstration of successfully flip-chip bonding of two BiCMOS amplifiers onto LNOI PIC by using thermocompression bonding.
T3.2 progress:
Verification that mechanical polishing, for coupling losses lower than the reported 2dB/facet, is possible even if LN is known to be brittle. New set alignment marks included in the ADK.
First step toward edge-coupling of a miniature optical isolator device. 3D-printing of two standard-design collimating lenses/ Measurements of their optical insertion losses before insertion of the optical isolator.
T3.3 progress:
New strategy on the goldbox packaging above 100 GHz. Side-by-side connectors abandoned for in-line RF connections on the opposite edges: less losses (no 90-degree bends, shorter distances).
Tests on wire bonding showed that is not possible exceeding 70 GHz frequency. Other interconnection methods to be tested.
Discrete commercial RF termination resistors to be flip chip up to 70 GHz. Development of a more compact alternative approach that could operate beyond 100 GHz and embedded directly on the chip
WP4:
All partners defined the demo architectures and the building blocks specifications. They all submitted preliminary designs for tests, especially validating some of the required building block (ring resonator, TIA..).
WP5 : Project Management
Main results: submission of the all deliverables, addition of a new partner, finalization and signature of the Consortium Agreement.
WP6 : Roll-up banner, poster, website on line, LinkedIn page created (M1), Deliverable submitted on time except 6.12 PATTERN dissemination rules presented to project partners (KOM, M2); monitoring of compliance with the rules is ensured and continuously tracked by WP6 leader. PATTERN ZENODO community created.
WP1:
In PATTERN, RF routing capability added to LUCEDA software, set of key RF components and calibration kit
Basic measurements on bulk versus LNOI samples and design of focusing electrode
WP2
the growth of doped films of YIG on LNOI and observation of hysteris cycle.
WP3:
New approaches to reduce number of RF interconnections.
In PATTERN, RF routing capability added to LUCEDA software, set of key RF components and calibration kit
Basic measurements on bulk versus LNOI samples and design of focusing electrode
WP2
the growth of doped films of YIG on LNOI and observation of hysteris cycle.
WP3:
New approaches to reduce number of RF interconnections.