Influence of the Mission Profile on the Selection of the Leakage Inductance for DAB converter
Autores:
A. Campos, P. Dworakowski, B. Asllani, K. Vershinin
Publicado en:
EPE 2025
Editor:
EPE 2025
Solid insulation electrical endurance assessment under square voltage,
Autores:
M. Balde
Publicado en:
CEIDP September 14-17, 2025 (IEEE Conference on Electrical I5nsulation and Dielectric Phenomena), Manchester, 202
Editor:
IEEE Conference 2025
A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs
Autores:
Rui Wang, Drazen Dujic
Publicado en:
ECCE Aisa 2024, 2024, ISBN 979-8-3503-5133-0
Editor:
IEEE
Development of 15kV SiC-IGBT technology at Hitachi Energy
Autores:
N
Publicado en:
ECPE Workshop
Editor:
ECPE Workshop
Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10kV
Autores:
n
Publicado en:
ISCRM25
Editor:
ISCRM25
Integrated Short-Circuit Protection Design Based on Dual-Channel Gate Driver for Series Connected Medium-Voltage SiC MOSFETs
Autores:
Rui Wang, Drazen Dujic
Publicado en:
APEC 2024
Editor:
APEC 2024
Pushing the limits: Advanced SiC detectors for operation in harsh environments
Autores:
G. Pellegrini
Publicado en:
CERN invited talk
Editor:
CERN