Influence of the Mission Profile on the Selection of the Leakage Inductance for DAB converter
Autorzy:
A. Campos, P. Dworakowski, B. Asllani, K. Vershinin
Opublikowane w:
EPE 2025
Wydawca:
EPE 2025
Solid insulation electrical endurance assessment under square voltage,
Autorzy:
M. Balde
Opublikowane w:
CEIDP September 14-17, 2025 (IEEE Conference on Electrical I5nsulation and Dielectric Phenomena), Manchester, 202
Wydawca:
IEEE Conference 2025
A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs
Autorzy:
Rui Wang, Drazen Dujic
Opublikowane w:
ECCE Aisa 2024, 2024, ISBN 979-8-3503-5133-0
Wydawca:
IEEE
Development of 15kV SiC-IGBT technology at Hitachi Energy
Autorzy:
N
Opublikowane w:
ECPE Workshop
Wydawca:
ECPE Workshop
Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10kV
Autorzy:
n
Opublikowane w:
ISCRM25
Wydawca:
ISCRM25
Integrated Short-Circuit Protection Design Based on Dual-Channel Gate Driver for Series Connected Medium-Voltage SiC MOSFETs
Autorzy:
Rui Wang, Drazen Dujic
Opublikowane w:
APEC 2024
Wydawca:
APEC 2024
Pushing the limits: Advanced SiC detectors for operation in harsh environments
Autorzy:
G. Pellegrini
Opublikowane w:
CERN invited talk
Wydawca:
CERN