Future Oriented Renewable and Reliable Energy SIC Solutions

Informazioni relative al progetto

FOR2ENSICS

ID dell’accordo di sovvenzione: 101075672

DOI

10.3030/101075672

Data della firma CE 22 Agosto 2022

Data di avvio 1 Gennaio 2023

Data di completamento 31 Dicembre 2026

Finanziato da

• Climate, Energy and Mobility

Costo totale

€ 5 533 910,00

Contributo UE

€ 4 393 517,50

Coordinato da

AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
Spain

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Demonstrators, pilots, prototypes (4)

MFT prototypes

Delivery of more than 3 demontrator units of the Medium Frequency Transformer (MTF) after design, fabrication, testing, and validations phases.

15kV IGBT dies available for packaging

Delivery of the 15kV IGBTs and associated diodes good dies for packaging in WP3

3.3kV MOSFET SiC modules delivery

Supply of the 3.3kV SiC MOSFETs packaged in LinPak modules for the High Voltage series connection concept studied in WP5 and WP6.

15kV rated epilayers with high lifetime and low BPD density

High quality epitaxial wafers with 15kV capability, high carrier lifetime and low BPD density to by supplied to the other tasks and Workpackages for IGBT and diodes devices fabrication.

Websites, patent fillings, videos etc. (1)

Webpage and visual identity

Project’s website. It will be a main channel for the project’s communication to stakeholders, media, and public at large. It will be periodically updated with the progress and free-to-publish results of the project.

Documents, reports (2)

Annual Project Reports

Annual reports of the scientific and technical activities carried out in the project. M12, M24, M36, M48

Communication and dissemination plan

The project communication and dissemination plan will be presented at month 4. It will act as an overall framework for target-oriented communication actions and corporate identity for the project (logo, templates, infographics, brochures and 3 minutes videos showing the project targets).

Data Management Plan (1)

Data management plan (DMP)

Definition of procedures to exchange information among the partners. Updates will be informed during project reports.

Pubblicazioni

Conference proceedings (7)

Influence of the Mission Profile on the Selection of the Leakage Inductance for DAB converter

Autori: A. Campos, P. Dworakowski, B. Asllani, K. Vershinin
Pubblicato in: EPE 2025
Editore: EPE 2025

Solid insulation electrical endurance assessment under square voltage,

Autori: M. Balde
Pubblicato in: CEIDP September 14-17, 2025 (IEEE Conference on Electrical I5nsulation and Dielectric Phenomena), Manchester, 202
Editore: IEEE Conference 2025

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Autori: Rui Wang, Drazen Dujic
Pubblicato in: ECCE Aisa 2024, 2024, ISBN 979-8-3503-5133-0
Editore: IEEE

Development of 15kV SiC-IGBT technology at Hitachi Energy

Autori: N
Pubblicato in: ECPE Workshop
Editore: ECPE Workshop

Minimizing edge termination footprint in UHV SiC power devices: an area-efficient edge structure for power devices rated over 10kV

Autori: n
Pubblicato in: ISCRM25
Editore: ISCRM25

Integrated Short-Circuit Protection Design Based on Dual-Channel Gate Driver for Series Connected Medium-Voltage SiC MOSFETs

Autori: Rui Wang, Drazen Dujic
Pubblicato in: APEC 2024
Editore: APEC 2024

Pushing the limits: Advanced SiC detectors for operation in harsh environments

Autori: G. Pellegrini
Pubblicato in: CERN invited talk
Editore: CERN

Peer reviewed articles (2)

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Autori: Rui Wang, Drazen Dujic
Pubblicato in: IEEE transactions on power electronics, 2024, ISSN 1941-0107
Editore: IEEE
DOI: 10.1109/TPEL.2024.3380245

Advanced Dual-Channel Gate Driver with Short-circuit Protection for Series Connected Medium-Voltage SiC MOSFETs

Autori: Rui Wang, Drazen Dujic
Pubblicato in: Transactions on Power Electronics, 2025, ISSN 0000-0000
Editore: Transactions on Power Electronics
DOI: 10.1109/TPEL.2025.3578969

Other (2)

Ultra High Voltage Power Electronics | ECPE Hybrid Workshop

Autori: B. Asllani
Pubblicato in: Bridge news item: event advertisement
Editore: ETIPSNET BRIDGE

Ultra High Voltage Power Electronics | ECPE Hybrid Workshop

Autori: B. Asllani
Pubblicato in: Bridge Newsletter
Editore: BRIDGE