Perovskite Spiking Neurons for Intelligent Networks

Informazioni relative al progetto

PeroSpiker

ID dell’accordo di sovvenzione: 101097688

DOI

10.3030/101097688

Data della firma CE 21 Giugno 2023

Data di avvio 1 Ottobre 2023

Data di completamento 30 Settembre 2028

Finanziato da

• European Research Council (ERC)

Costo totale

€ 2 498 004,00

Contributo UE

€ 2 498 004,00

Coordinato da

UNIVERSITAT POLITECNICA DE VALENCIA
Spain

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Pubblicazioni

Peer reviewed articles (27)

Switching Response in Organic Electrochemical Transistorsby Ionic Diffusion and Electronic Transport

Autori: Juan Bisquert, Baurzhan Ilyassov, Nir Tessler
Pubblicato in: Advanced Science, Numero 2404182, 2024, ISSN 2198-3844
Editore: Wiley-VCH
DOI: 10.1002/ADVS.202404182

Recent advances in fluidic neuromorphic computing

Autori: Cheryl Suwen Law, Juan Wang, Kornelius Nielsch, Andrew D. Abell, Juan Bisquert, Abel Santos
Pubblicato in: Applied Physics Reviews, Numero 12, 2025, ISSN 1931-9401
Editore: AIP Publishing
DOI: 10.1063/5.0235267

Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications

Autori: Juan Bisquert, Wooyoung Shim, So‐Yeon Kim, Bernabe Linares‐Barranco
Pubblicato in: Advanced Electronic Materials, 2025, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/AELM.202400903

Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications

Autori: Gonzalo Rivera-Sierra, Patricio Ramirez, Juan Bisquert, Agustín Bou
Pubblicato in: Journal of the American Chemical Society, 2025, ISSN 0002-7863
Editore: American Chemical Society (ACS)
DOI: 10.1021/JACS.5C04903

Time Transients with Inductive Loop Traces in Metal Halide Perovskites

Autori: Enrique Hernández‐Balaguera; Juan Bisquert
Pubblicato in: Advanced Functional Materials, 2023, ISSN 1616-301X
Editore: Wiley
DOI: 10.1002/ADFM.202308678

Bifurcation and oscillations in fluidic nanopores: A model neuron for liquid neuromorphic networks

Autori: Alicia Cordero; Juan R. Torregrosa; Juan Bisquert
Pubblicato in: Physical Review Research, Numero 7, 2025, ISSN 2643-1564
Editore: American Physical Society (APS)
DOI: 10.1103/PHYSREVRESEARCH.7.013282

Relaxation Time of Multipore Nanofluidic Memristors for Neuromorphic Applications

Autori: Gonzalo Rivera-Sierra, Patricio Ramirez, Juan Bisquert, Agustín Bou
Pubblicato in: Journal of the American Chemical Society, Numero 147, 2025, ISSN 0002-7863
Editore: American Chemical Society (ACS)
DOI: 10.1021/JACS.5C04903

Inductive and Capacitive Hysteresis of Current-Voltage Curves: Unified Structural Dynamics in Solar Energy Devices, Memristors, Ionic Transistors, and Bioelectronics.

Autori: Juan Bisquert
Pubblicato in: PRX Energy, Numero 3, 2024, ISSN 2768-5608
Editore: American Physical Society
DOI: 10.1103/PRXEnergy.3.011001

Experimental demonstration of coupled differential oscillator networks for versatile applications

Autori: Jiménez, Manuel; Núñez Martínez, Juan; Shamsi, Jafar; Linares Barranco, Bernabé; Avedillo de Juan, María José
Pubblicato in: Frontiers in Neuroscience, 2023, ISSN 1662-453X
Editore: Frontiers Media S.A.
DOI: 10.3389/FNINS.2023.1294954

Hysteresis in Organic Electrochemical Transistors: Distinction of Capacitive and Inductive Effects

Autori: Juan Bisquert
Pubblicato in: Journal of Physical Chemistry Letters, Numero 14, 49, 2023, ISSN 1948-7185
Editore: American Chemical Society; American Chemical Society
DOI: 10.1021/acs.jpclett.3c03062

Hysteresis, Rectification, and Relaxation Times of Nanofluidic Pores for Neuromorphic Circuit Applications

Autori: Juan Bisquert
Pubblicato in: Advanced Physics Research, 2024, ISSN 2751-1200
Editore: Wiley
DOI: 10.1002/APXR.202400029

Transient Charging of Mixed Ionic‐Electronic Conductors by Anomalous Diffusion

Autori: Heyi Zhang, Gonzalo Rivera‐Sierra, Shirin Siahjani‐Gultekin, Jenifer Rubio‐Magnieto, Anis Allagui, Ignacio Sanjuán, David Franco, Antonio Guerrero, Enrique H. Balaguera, Juan Bisquert
Pubblicato in: Advanced Materials, 2025, ISSN 0935-9648
Editore: Wiley
DOI: 10.1002/ADMA.202507739

A one-transistor organic electrochemical self-sustained oscillator model for neuromorphic networks

Autori: Juan Bisquert, Nir Tessler
Pubblicato in: Newton, 2025, ISSN 2950-6360
Editore: Elsevier BV
DOI: 10.1016/J.NEWTON.2025.100207

Hysteresis in memristors produces conduction inductance and conduction capacitance effects

Autori: Bisquert, Juan; Roldán, Juan B.; Miranda, Enrique
Pubblicato in: Physical Chemistry Chemical Physics, 2024, ISSN 1463-9076
Editore: Royal Society of Chemistry
DOI: 10.1039/D4CP00586D

Memristive InAs-Based Semiconductors with Anisotropic Ion Transport

Autori: Taeyoung Kim, Jongbum Won, Jihong Bae, Giyeok Lee, Minwoo Lee, Sangjin Choi, Sungsoon Kim, Dongchul Seo, Youngjun Cho, Taehoon Kim, Bokyeong Kim, Hong Choi, Byung-Kyu Yu, Jaegyeom Kim, Soohyung Park, Jinwoo Cheon, Jong-Young Kim, Juan Bisquert, Aloysius S
Pubblicato in: Advanced Materials, Numero 37, 2025, ISSN 0935-9648
Editore: Wiley-VCH GmbH
DOI: 10.1002/ADMA.202500056

Synaptic Response of Fluidic Nanopores: The Connection of Potentiation with Hysteresis

Autori: Juan Bisquert, Marc Sánchez-Mateu, Agustín Bou, Cheryl Suwen Law, and Abel Santos
Pubblicato in: ChemPhysChem, Numero e202400265, 2024, ISSN 1439-4235
Editore: Wiley-VCH GmbH, Weinheim
DOI: 10.1002/CPHC.202400265

Mapping of Internal Ionic/Electronic Transient Dynamics in Current–Voltage Operation of Perovskite Solar Cells

Autori: Bisquert, Juan; Balaguera, Enrique H.
Pubblicato in: Small, Numero 2409534, 2024, ISSN 1613-6829
Editore: Wiley
DOI: 10.1002/SMLL.202409534

Recent advances in fluidic neuromorphic computing

Autori: Cheryl Suwen Law, Juan Wang, Kornelius Nielsch, Andrew D. Abell, Juan Bisquert, Abel Santos
Pubblicato in: Applied Physics Reviews, Numero 12, 2025, ISSN 1931-9401
Editore: AIP Publishing
DOI: 10.1063/5.0235267

First optimal vectorial eighth-order iterative scheme for solving non-linear systems

Autori: Alicia Cordero, Juan R. Torregrosa, Paula Triguero-Navarro
Pubblicato in: Applied Mathematics and Computation, Numero 498, 2025, ISSN 0096-3003
Editore: Elsevier BV
DOI: 10.1016/J.AMC.2025.129401

Introduction to neuromorphic functions of memristors: The inductive nature of synapse potentiation

Autori: So-Yeon Kim, Heyi Zhang, Gonzalo Rivera-Sierra, Roberto Fenollosa, Jenifer Rubio-Magnieto, Juan Bisquert
Pubblicato in: Journal of Applied Physics, Numero 137, 2025, ISSN 0021-8979
Editore: AIP Publishing
DOI: 10.1063/5.0257462

Hysteresis, Impedance, and Transients Effects in Halide Perovskite Solar Cells and Memory Devices Analysis by Neuron-Style Models

Autori: Juan Bisquert
Pubblicato in: Advanced Energy Materials, Numero 2400442, 2024, ISSN 1614-6840
Editore: Wiley
DOI: 10.1002/aenm.202400442

Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications

Autori: Juan Bisquert, Wooyoung Shim, So‐Yeon Kim, Bernabe Linares‐Barranco
Pubblicato in: Advanced Electronic Materials, Numero 11, 2025, ISSN 2199-160X
Editore: Wiley
DOI: 10.1002/AELM.202400903

Accelerating the Assessment of Hysteresis in Perovskite Solar Cells

Autori: Enrique H. Balaguera, Juan Bisquert
Pubblicato in: ACS Energy Lett., Numero 9, 2024, ISSN 2380-8195
Editore: American Chemical Society
DOI: 10.1021/acsenergylett.3c02779

Advancing Logic Circuits With Halide Perovskite Memristors for Next‐Generation Digital Systems

Autori: Mostafa Shooshtari, So‐Yeon Kim, Saeideh Pahlavan, Gonzalo Rivera‐Sierra, Manuel Jiménez Través, Teresa Serrano‐Gotarredona, Juan Bisquert, Bernabé Linares‐Barranco
Pubblicato in: SmartMat, Numero 6, 2025, ISSN 2766-8525
Editore: Wiley
DOI: 10.1002/SMM2.70032

Bifurcation and Frequency Properties of S-Type Neuronic Oscillators

Autori: Juan Bisquert; Roberto Fenollosa; Alicia Cordero; Juan R. Torregrosa
Pubblicato in: The Journal of Physical Chemistry Letters, Numero 16, 2025, ISSN 1948-7185
Editore: American Chemical Society (ACS)
DOI: 10.1021/ACS.JPCLETT.5C00288

Introduction to neuromorphic functions of memristors: The inductive nature of synapse potentiation

Autori: So-Yeon Kim, Heyi Zhang, Gonzalo Rivera-Sierra, Roberto Fenollosa, Jenifer Rubio-Magnieto, Juan Bisquert
Pubblicato in: Journal of Applied Physics, Numero 137, 2025, ISSN 0021-8979
Editore: AIP Publishing
DOI: 10.1063/5.0257462

Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices

Autori: So-Yeon Kim, Heyi Zhang, Jenifer Rubio-Magnieto
Pubblicato in: The Journal of Physical Chemistry Letters, 2024, ISSN 1948-7185
Editore: American Chemical Society (ACS)
DOI: 10.1021/ACS.JPCLETT.4C02170

Other (3)

Transient response of ion-controlled transistors: the result of ionic and electronic coupling

Autori: Bisquert, Juan
Pubblicato in: Proceedings of the Materials for Sustainable Development Conference (MATSUS Fall 24), 2024
DOI: 10.5281/ZENODO.14185685

Controlling capacitive and inductive hysteresis processes of halide perovskite for solar cell and neuromorphic applications

Autori: Bisquert, Juan
Pubblicato in: Proceedings of the International Conference on Hybrid and Organic Photovoltaics, 2024
DOI: 10.5281/ZENODO.14770384

Impedance spectroscopy of memristors: connecting hysteresis to the equivalent circuit characteristics

Autori: Bisquert, Juan
Pubblicato in: Proceedings of the Materials for Sustainable Development Conference (MATSUS Fall 24), 2024
DOI: 10.5281/ZENODO.13889075