Smart Sensor Analog Front-End powered by Emerging Reconfigurable Devices

Informazioni relative al progetto

SENSOTERIC

ID dell’accordo di sovvenzione: 101135316

DOI

10.3030/101135316

Data della firma CE 26 Ottobre 2023

Data di avvio 1 Gennaio 2024

Data di completamento 31 Dicembre 2027

Finanziato da

• Digital, Industry and Space

Costo totale

€ 3 913 573,75

Contributo UE

€ 3 913 553,75

Coordinato da

NAMLAB GGMBH
Germany

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Data Management Plan (1)

Data Management Plan

Plan for conserving the data during the project and after the project end

Documents, reports (6)

RFET device characterization V1

Report on dc-IV characteristics for RFET devices

Plan for dissemination and communication actions
RFET Circuit Elements exploiting Inherent Higher Functionality

These circuits exploit the ambipolar and tuneable nature to provide a dedicated function.

Project Handbook

Describes the project organization and internal procedures

RFET Compact model with improved Schottky barrier modeling – V1

First working compact model validated for undoped RFETs with control and polarity gates incorporating thermionic and field-emission currents for Schottky barrier modeling

NDR RFET, Report on fabrication and electrical characterization

Report on fabrication and electrical characteristics of NDR RFETs and definition of design space

Websites, patent fillings, videos etc. (1)

Project website and social media accounts

Website with visual idendity and social media accounts set up

Pubblicazioni

Peer reviewed articles (6)

Roadmap for Schottky barrier transistors

Autori: Eva Bestelink, Giulio Galderisi, Patryk Golec, Yi Han, Benjamin Iniguez, Alexander Kloes, Joachim Knoch, Hiroyuki Matsui, Thomas Mikolajick, Kham M Niang, Benjamin Richstein, Mike Schwarz, Masiar Sistani, Radu A Sporea, Jens Trommer, Walter M Weber, Qing-Tai Zhao, Laurie E Calvet
Pubblicato in: Nano Futures, Numero 8, 2024, ISSN 2399-1984
Editore: IOP Publishing
DOI: 10.1088/2399-1984/AD92D1

A Reconfigurable Ge Transistor Functionally Diversified by Negative Differential Resistance

Autori: Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Alexandra Dobler, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 12, 2024, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/JEDS.2024.3432971

Temperature-dependent electronic transport in reconfigurable transistors based on Ge on SOI and strained SOI platforms

Autori: Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Jean-Michel Hartmann, Frank Fournel, Lilian Vogl, Peter Schweizer, Andrew M. Minor, Masiar Sistani, Walter M. Weber
Pubblicato in: Solid-State Electronics, Numero 226, 2025, ISSN 0038-1101
Editore: Elsevier BV
DOI: 10.1016/J.SSE.2024.109055

Implementation of Negative Differential Resistance-Based Circuits in Multigate Ge Transistors

Autori: Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Enrique Prado Navarrete, Johannes Aberl, Moritz Brehm, Masiar Sistani, Walter M. Weber
Pubblicato in: IEEE Transactions on Electron Devices, Numero 71, 2024, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2024.3485600

Reconfigurable Ge Transistors Enabling Adaptive Differential Amplifiers

Autori: Andreas Fuchsberger, Alexandra Dobler, Lukas Wind, Andreas Kramer, Julian Kulenkampff, Maximilian Reuter, Daniele Nazzari, Giulio Galderisi, Enrique Prado Navarrete, Johannes Aberl, Moritz Brehm, Thomas Mikolajick, Jens Trommer, Klaus Hofmann, Masiar Sistani, Walter M. Weber
Pubblicato in: IEEE Transactions on Electron Devices, Numero 72, 2025, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2025.3559912

Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors

Autori: A. Fuchsberger, A. Verdianu, L. Wind, D. Nazzari, Enrique Prado Navarrete, C. Wilfingseder, J. Aberl, M. Brehm, J-M. Hartmann, M. Sistani, W. M. Weber
Pubblicato in: IEEE Transactions on Electron Devices, Numero 72, 2025, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers (IEEE)
DOI: 10.1109/TED.2025.3545802