Skip to main content
Weiter zur Homepage der Europäischen Kommission (öffnet in neuem Fenster)
Deutsch Deutsch
CORDIS - Forschungsergebnisse der EU
CORDIS
Inhalt archiviert am 2024-06-18

Advanced TEchnology MOdelling for eXtra-functionality devices

Projektbeschreibung


Nanoelectronics Technology
Extends the capabilities of TCAD to the modelling of leakage currents and technologies for low-leakage ultra-shallow junctions.

Within previous European projects process simulation has been brought to a state which allows in industrial environments a sufficiently accurate simulation of doping profiles in advanced CMOS technologies. Important electrical characteristics of core CMOS devices can now be predicted from scratch or with a minimum calibration effort. However, concepts towards low-power electronics, smart power applications, CMOS image sensors, and CMOS derivatives providing extra functionalities are still not sufficiently supported by TCAD. This concerns especially the prediction of leakage currents in such or parasitic devices caused by electrically active defects that remain after processing, and alternative doping techniques like plasma immersion ion implantation, low-temperature implantation, diversified cocktail implants and laser annealing which are considered for low-leakage ultra shallow junctions. The lack of suitable models that can be used in the early stages of industrial research and development inhibits the necessary cost reduction in the development of devices for which Europe is still at the forefront. The Atemox project will develop the full set of missing models and implement and include them into the Sentaurus TCAD platform of Synopsys so that they are of immediate value to the European semiconductor industry. The integrated models will finally be evaluated by STMicroelectronics with respect to industrial needs. To reach these ambitious goals, European companies active in complementary fields of competence  and leading European research institutes have formed a consortium that is well prepared to expertly cover all fields from experiment via characterization and modelling to simulation.

Within previous European projects with major contributions by the current proposers, process simulation has been brought to a state which allows in industrial environments a sufficiently accurate simulation of doping profiles in advanced CMOS technologies. Important electrical characteristics of core CMOS devices can now be predicted from scratch or with a minimum calibration effort. However, concepts towards low-power electronics, smart power applications, CMOS image sensors, and CMOS derivatives providing extra functionalities are still not sufficiently supported by TCAD. This concerns especially the prediction of leakage currents in such or parasitic devices caused by electrically active defects that remain after processing, and alternative doping techniques like plasma immersion ion implantation, low-temperature implantation, diversified cocktail implants and laser annealing which are considered for low-leakage ultra shallow junctions. The lack of suitable models that can be used in the early stages of industrial R&D inhibits the necessary cost reduction in the development of devices for which Europe is still at the forefront. Our project will develop the full set of missing models and implement and include them into the Sentaurus TCAD platform of Synopsys so that they are of immediate value to the European semiconductor industry. The integrated models will finally be evaluated by STMicroelectronics with respect to industrial needs. To reach these ambitious goals, a consortium of European companies active in complementary fields of competence (STMicroelectronics: device manufacturing, Synopsys: TCAD software, Exico, IBS: equipment production, Probion, Semilab: characterization) and leading European research institutes (CNR-IMM, CNRS-LAAS/CEMES, ETH-Zurich, Fraunhofer-IISB, Univ. Newcastle) has been formed which, together, is well prepared to expertly cover all fields from experiment via characterization and modelling to simulation.

Wissenschaftliches Gebiet (EuroSciVoc)

CORDIS klassifiziert Projekte mit EuroSciVoc, einer mehrsprachigen Taxonomie der Wissenschaftsbereiche, durch einen halbautomatischen Prozess, der auf Verfahren der Verarbeitung natürlicher Sprache beruht. Siehe: Das European Science Vocabulary.

Sie müssen sich anmelden oder registrieren, um diese Funktion zu nutzen

Programm/Programme

Mehrjährige Finanzierungsprogramme, in denen die Prioritäten der EU für Forschung und Innovation festgelegt sind.

Thema/Themen

Aufforderungen zur Einreichung von Vorschlägen sind nach Themen gegliedert. Ein Thema definiert einen bestimmten Bereich oder ein Gebiet, zu dem Vorschläge eingereicht werden können. Die Beschreibung eines Themas umfasst seinen spezifischen Umfang und die erwarteten Auswirkungen des finanzierten Projekts.

Aufforderung zur Vorschlagseinreichung

Verfahren zur Aufforderung zur Einreichung von Projektvorschlägen mit dem Ziel, eine EU-Finanzierung zu erhalten.

FP7-ICT-2009-5
Andere Projekte für diesen Aufruf anzeigen

Finanzierungsplan

Finanzierungsregelung (oder „Art der Maßnahme“) innerhalb eines Programms mit gemeinsamen Merkmalen. Sieht folgendes vor: den Umfang der finanzierten Maßnahmen, den Erstattungssatz, spezifische Bewertungskriterien für die Finanzierung und die Verwendung vereinfachter Kostenformen wie Pauschalbeträge.

CP - Collaborative project (generic)

Koordinator

FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG EV
EU-Beitrag
€ 649 811,00
Adresse
HANSASTRASSE 27C
80686 MUNCHEN
Deutschland

Auf der Karte ansehen

Region
Bayern Oberbayern München, Kreisfreie Stadt
Aktivitätstyp
Research Organisations
Links
Gesamtkosten

Die Gesamtkosten, die dieser Organisation durch die Beteiligung am Projekt entstanden sind, einschließlich der direkten und indirekten Kosten. Dieser Betrag ist Teil des Gesamtbudgets des Projekts.

Keine Daten

Beteiligte (13)

Mein Booklet 0 0