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Single active dopant detection in semiconductor nanowires using electron holography

Cel

"The end of ""happy scaling"" in the semiconductor industry has lead to innovation being a key parameter in nanoelectronics. Doped nanowires of all types of sizes, shapes and composition are now used as components to build nano-electronic devices, light sources, detectors and for photovoltaic applications. As these devices are reduced in size, the location of individual dopant atoms becomes more important and the behavior of only one or two atoms can dominate their properties. More recently, research into devices that contain a single dopant atom has begun to gain momentum. At this time there is no method that can routinely measure the presence of the single dopant atoms that are inside these devices and our experience in the nanotechnology age has taught us that we cannot make what we cannot see. In 2011, several review papers in high-impact journals have highlighted the need for a technique that can see these atoms. Their detection is now within reach, using a technique known as off-axis electron holography."

Zaproszenie do składania wniosków

ERC-2012-StG_20111012
Zobacz inne projekty w ramach tego zaproszenia

System finansowania

ERC-SG - ERC Starting Grant

Instytucja przyjmująca

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Wkład UE
€ 1 500 000,00
Adres
RUE LEBLANC 25
75015 PARIS 15
Francja

Zobacz na mapie

Region
Ile-de-France Ile-de-France Paris
Rodzaj działalności
Research Organisations
Kierownik naukowy
David Edward Cooper (Dr.)
Kontakt administracyjny
Marie-Laure Page (Ms.)
Linki
Koszt całkowity
Brak danych

Beneficjenci (1)