Figure 1 gives an immediate overview of the progress achieved in HEROIC in terms of maximum frequency of transition fT for transistors based on solution-processed organic semiconductors. Red symbols indicate works led by the HEROIC team,[14] dark symbols results in which the HEROIC team supported research led by other international groups. [15-18]
Figure 2 summarizes the measured fT of organic transistors from selected international works achieving the best results (blue symbols),[19-30] comprising all technologies, including devices with lithography patterned electrodes and evaporated semiconductors. After a first fast increase in fT from 2007 to 2011, when 27.7 MHz were achieved with a device based on an evaporated small molecule and a channel length of 2 μm defined by photolithography. Then a sort of plateau is present up to 2018. HEROIC started in 2015, targeting high-frequency with transistors based on printed semiconductors, fabricated without the use of any processing mask and by combining only low-temperature, printing and direct-writing processes. With a fast improvement, HEROIC reached fT values achieved with other technologies, and then surpassed them setting the new absolute record for organic transistors at 160 MHz.
REFERENCES
[1] manuscript under review 2020.
[2] IEEE TED 2017, 64, 1960.
[3] Sci. Rep. 2016, 6, 38941.
[4] Adv. Electron. Mater. 2018, 4, 1800340.
[5] manuscript in preparation 2020.
[6] Nat. Commun. 2015, 6, 8394.
[7] Adv. Mater. 2018, 30, 1705463.
[8] Nat. Commun. 2019, 10, 3365.
[9] Nat. Commun. 2019, 10, 5226.
[10] IEEE EDL. 2019, 40, 953.
[11] Org. Electron. 2015, 20, 132.
[12] manuscript under review 2020.
[13] Adv. Funct. Mater. 2020, 30, 1907641.
[14] Adv. Sci. 2018, 1801566.
[15] Adv. Electron. Mater. 2015, 1, 1500024.
[16] Appl. Phys. Lett. 2016, 108, 023302.
[17] IEDM, 1-5 Dec. 2018, 2018.
[18] AM-FPD, 2-5 July 2019, 2019.
[19] Nature Nanotechnol. 2007, 2, 784.
[20] IEDM, 7-9 Dec. 2009, 2009.
[21] Jpn. J. Appl. Phys. 2011, 50, 01BC01.
[22] Org. Electron. 2013, 14, 1656.
[23] Adv. Mater. 2014, 26, 2983.
[24] Adv. Mater. Interf. 2014, 1, 1300124.
[25] Org. Electron. 2015, 20, 119.
[26] Adv. Electron. Mater. 2015, 1, 1500155.
[27] Sci. Rep. 2018, 8, 7643.
[28] Sci. Adv. 2018, 4, eaao5758.
[29] Org. Electron. 2018, 54, 40.
[30] Sci. Adv. 2020, 6, eaaz5156.