Overview of the main results pertaining to each of the stated objectives:
1) Model extension to mesoscale:
The model extension (WP1-2) was attained during the first 18 months. Experimental validation of the model (WP5) was done on thin films, two- and three-dimensional materials with defects, and superlattices, and industrial systems, focusing on SiC and GaN materials and devices. The model fulfills our accuracy target, achieving less than 20% error.
The validation results have been disseminated in 30 published articles, including high profile journals (PRL, PRX, Adv. Mat., Nature Materials), presented in 38 conferences, including the Gordon Conference, the MRS, IMAPS, or the EMRS, and led to 10 invited talks.
2) Integration into a modelling software:
This objective targeted a professional level software package, user interface, and documentation. These three targets have been attained within WP3 and WP4. A database of ab-initio materials input files has been made available online, containing the most relevant semiconductors used in the electronics industry.
The almaBTE software has been disseminated in many ways, including a press release, dedicated website, user forum, published review of the method, 5 software releases, mailing list announcements reaching ~4000 people, a training course and a webinar.
3) Design of new generation substrates for GaN-based power electronics:
WP6 demonstrated the use of AlmaBTE in an industrial environment. The TCAD team of ST-microelectronics employed almaBTE to conceive new layered substrates for GaN based power electronics devices. Aixtron assessed process feasibility for the substrate fabrication. The conception process also permitted to address practical user issues and improve the CAD interface.
The conception of new substrates enabled by almaBTE has been disseminated in four conferences, and two plenary presentations at LETI (France) and IMEC (Belgium).
Production of high power electronics and LEDs are key markets for AIXTRON products. Both markets will significantly profit from increased device lifetime and reliability due to improved thermal behavior of the devices. Therefore AIXTRON uses trade shows, conferences and direct customer contacts to disseminate and exploit the new almaBTE substrate concepts. The results obtained within the ALMA project are encouraging and make rise the expectation on the duration of the device lifetime: possibly 15% longer lifetime for devices on Si substrates; perhaps 30% longer lifetime for devices on SiC substrates, opening exploitation opportunities for ST microelectronics.