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Merging Nanoporous Materials with Energy-Efficient Spintronics

Cel

This Project aims to integrate engineered nanoporous materials into novel energy-efficient spintronic applications. Magnetic storage and magneto-electronic devices are conventionally controlled by means of magnetic fields (via electromagnetic induction) or using spin-polarized electric currents (spin-transfer torque). Both principles involve significant energy loss by heat dissipation (Joule effect). The replacement of electric current with electric field would drastically reduce the overall power consumption. Strain-mediated magneto-electric coupling in piezoelectric-magnetostrictive bilayers might appear a proper strategy to achieve this goal. However, this approach is not suitable in spintronics because of the clamping effects with the substrate, need of epitaxial interfaces and risk of fatigue-induced mechanical failure. The exciting possibility to control ferromagnetism of metals and semiconductors directly with electric field (without strain) has been recently reported, but most significant effects occur below 300 K and only in ultra-thin films or nanoparticles. This Project tackles the development of a new type of nanocomposite material, comprising an electrically conducting or semiconducting nanoporous layer filled with a suitable dielectric material, where the magnetic properties of the metal/semiconductor will be largely tuned at room temperature (RT) by simply applying a voltage, via electric charge accumulation. The porous layer will consist of specific alloys (Cu-Ni or Fe-Rh) or oxide diluted magnetic semiconductors, where surface magnetic properties have been recently reported to be sensitive to electric field at RT. Based on these new materials, three technological applications are envisaged: electrically-assisted magnetic recording, voltage-driven switching of magnetic random-access memories and spin field-effect transistors. The obtained results are likely to open new paradigms in the field of spintronics and could be of high economic transcendence.

Instytucja przyjmująca

UNIVERSIDAD AUTONOMA DE BARCELONA
Wkład UE netto
€ 1 794 380,00
Adres
Calle Campus Universitario Sn Cerdanyola V
08290 Cerdanyola Del Valles
Hiszpania
Rodzaj działalności
Higher or Secondary Education Establishments
Finansowanie spoza UE
€ 0,00

Beneficjenci (1)

UNIVERSIDAD AUTONOMA DE BARCELONA
Hiszpania
Wkład UE netto
€ 1 794 380,00
Adres
Calle Campus Universitario Sn Cerdanyola V
08290 Cerdanyola Del Valles
Rodzaj działalności
Higher or Secondary Education Establishments
Finansowanie spoza UE
€ 0,00