Deliverables Demonstrators, pilots, prototypes (2) First pillars on SiO2 island layers available by DSA (free surface) First pillars on SiO2 island layer available (20–50 nm) by EBDW Documents, reports (18) Functional characterization of RT CMOS-SET demonstrators Functional characterization of CMOS-SET demonstrators First delivery of wafer-scale pillars with Si nanodots for device fabrication Report on predicted optimum device specifications for demonstrator fabrication Report on stability studies of nanopillars Report on stability studies of nanopillars under ion irradiation Report on optimum processing conditions in planar stacks with HIM Report on process simulation of single Si dot self-assembly First data from ion beam mixing simulations as input for kinetic Monte-Carlo simulations Electrical characterization of functional nano-pillars Report on simulation of electrical performance of silicon nanodot single electron devices Assessment of silicon nanodot SETs as low-energy dissipation devices Structural characterization of Si nanodot self-assembly Report on process definition Structural characterization of functional nano-pillars Electrical characterization of Si nanodot self-assembly Report on Si nanodot self-assembly in Si/SiO2/Si nanopillar stacks Plan for fabrication of Si nanodot self-assem-bly by ion processing Report on the first version of process simulator of ion implantation and mixing in Si/SiO2 nanostructures Assessment of IETS and DA-SDT investiga-tion of defects at the Si/SiO2 interface Other (3) Organization and realization Workshop 1: Tunneling devices: Theory and experiment Final version of process simulator of ion im-plantation and mixing in 3D Si/SiO2 nano-structures with the graphical user interface Organization and realization Workshop 2: DSA: Block Co-Polymer and Beyond Websites, patent fillings, videos etc. (3) Specification of process and device parameters Project web-page established and launched Installation of an external industry board Publications Peer reviewed articles (22) Defect and density evolution under high-fluence ion irradiation of Si / SiO 2 heterostructures Author(s): F. Djurabekova, C. Fridlund, K. Nordlund Published in: Physical Review Materials, Issue 4/1, 2020, Page(s) 013601-1 to 013601-12, ISSN 2475-9953 Publisher: American Physical Society DOI: 10.1103/physrevmaterials.4.013601 Thermodynamics and ordering kinetics in asymmetric PS- b -PMMA block copolymer thin films Author(s): Gabriele Seguini, Fabio Zanenga, Gianluca Cannetti, Michele Perego Published in: Soft Matter, Issue 16/23, 2020, Page(s) 5525-5533, ISSN 1744-683X Publisher: Royal Society of Chemistry DOI: 10.1039/d0sm00441c An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization Author(s): Santiago H Andany, Gregor Hlawacek, Stefan Hummel, Charlène Brillard, Mustafa Kangül, Georg E Fantner Published in: Beilstein Journal of Nanotechnology, Issue 11, 2020, Page(s) 1272-1279, ISSN 2190-4286 Publisher: Beilstein-Institut Zur Forderung der Chemischen Wissenschaften DOI: 10.3762/bjnano.11.111 Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits Author(s): E. Amat, F. Klupfel, J. Bausells, F. Perez-Murano Published in: IEEE Transactions on Electron Devices, Issue 66/10, 2019, Page(s) 4461-4467, ISSN 0018-9383 Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/ted.2019.2937141 Direct observation of ion-induced self-organization and ripple propagation processes in atomistic simulations Author(s): A. Lopez-Cazalilla, F. Djurabekova, A. Ilinov, C. Fridlund, K. Nordlund Published in: Materials Research Letters, Issue 8/3, 2020, Page(s) 110-116, ISSN 2166-3831 Publisher: Taylor & Francis DOI: 10.1080/21663831.2019.1711458 Computer modeling of single-layer nanocluster formation in a thin SiO 2 layer buried in Si by ion mixing and thermal phase decomposition Author(s): Thomas Prüfer, Wolfhard Möller, Karl-Heinz Heinig, Daniel Wolf, Hans-Jürgen Engelmann, Xiaomo Xu, Johannes von Borany Published in: Journal of Applied Physics, Issue 125/22, 2019, Page(s) 225708, ISSN 0021-8979 Publisher: American Institute of Physics DOI: 10.1063/1.5096451 Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration Author(s): M.-L. Pourteau, A. Gharbi, P. Brianceau, J.-A. Dallery, F. Laulagnet, G. Rademaker, R. Tiron, H.-J. Engelmann, J. von Borany, K.-H. Heinig, M. Rommel, L. Baier Published in: Micro and Nano Engineering, Issue 9, 2020, Page(s) 100074, ISSN 2590-0072 Publisher: Elsevier DOI: 10.1016/j.mne.2020.100074 A Compact Model Based on Bardeen’s Transfer Hamiltonian Formalism for Silicon Single Electron Transistors Author(s): Fabian J. Klupfel Published in: IEEE Access, Issue 7, 2019, Page(s) 84053-84065, ISSN 2169-3536 Publisher: Institute of Electrical and Electronics Engineers Inc. DOI: 10.1109/access.2019.2924913 Effect of the Density of Reactive Sites in P(S‐ r ‐MMA) Film during Al 2 O 3 Growth by Sequential Infiltration Synthesis Author(s): Federica E. Caligiore, Daniele Nazzari, Elena Cianci, Katia Sparnacci, Michele Laus, Michele Perego, Gabriele Seguini Published in: Advanced Materials Interfaces, Issue 6/12, 2019, Page(s) 1900503, ISSN 2196-7350 Publisher: Wiley DOI: 10.1002/admi.201900503 Balancing Block Copolymer Thickness over Template Density in Graphoepitaxy Approach Author(s): Patricia Pimenta Barros, Ahmed Gharbi, Antoine Fouquet, Sandra Bos, Jérôme Hazart, Florian Delachat, Xavier Chevalier, Ian Cayrefourcq, Laurent Pain, Raluca Tiron Published in: Macromolecular Materials and Engineering, Issue 302/11, 2017, Page(s) 1700285, ISSN 1438-7492 Publisher: John Wiley & Sons Ltd. DOI: 10.1002/mame.201700285 Absence of single critical dose for the amorphization of quartz under ion irradiation Author(s): S Zhang, O H Pakarinen, M Backholm, F Djurabekova, K Nordlund, J Keinonen, T S Wang Published in: Journal of Physics: Condensed Matter, Issue 30/1, 2018, Page(s) 015403, ISSN 0953-8984 Publisher: Institute of Physics Publishing DOI: 10.1088/1361-648x/aa9868 Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits Author(s): Esteve Amat, Joan Bausells, Francesc Perez-Murano Published in: IEEE Transactions on Electron Devices, Issue 64/12, 2017, Page(s) 5172-5180, ISSN 0018-9383 Publisher: Institute of Electrical and Electronics Engineers DOI: 10.1109/ted.2017.2765003 Site-controlled formation of single Si nanocrystals in a buried SiO 2 matrix using ion beam mixing Author(s): Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek Published in: Beilstein Journal of Nanotechnology, Issue 9, 2018, Page(s) 2883-2892, ISSN 2190-4286 Publisher: Beilstein-Institut Zur Forderung der Chemischen Wissenschaften DOI: 10.3762/bjnano.9.267 Ordering kinetics in two-dimensional hexagonal pattern of cylinder-forming PS- b -PMMA block copolymer thin films: Dependence on the segregation strength Author(s): Gabriele Seguini, Fabio Zanenga, Michele Laus, Michele Perego Published in: Physical Review Materials, Issue 2/5, 2018, Page(s) from 055605-1 to 055605-6, ISSN 2475-9953 Publisher: American Physical Society (APS) DOI: 10.1103/physrevmaterials.2.055605 Trimethylaluminum Diffusion in PMMA Thin Films during Sequential Infiltration Synthesis: In Situ Dynamic Spectroscopic Ellipsometric Investigation Author(s): Elena Cianci, Daniele Nazzari, Gabriele Seguini, Michele Perego Published in: Advanced Materials Interfaces, Issue 5/20, 2018, Page(s) 1801016, ISSN 2196-7350 Publisher: John Wiley & Sons DOI: 10.1002/admi.201801016 An embedded neutral layer for advanced surface affinity control in grapho-epitaxy directed self-assembly Author(s): Florian Delachat, Ahmed Gharbi, Patricia Pimenta-Barros, Antoine Fouquet, Guillaume Claveau, Nicolas Posseme, Laurent Pain, Célia Nicolet, Christophe Navarro, Ian Cayrefourcq, Raluca Tiron Published in: Nanoscale, Issue 10/23, 2018, Page(s) 10900-10910, ISSN 2040-3364 Publisher: Royal Society of Chemistry DOI: 10.1039/c8nr00123e Review on suitable eDRAM configurations for next nano-metric electronics era Author(s): E. AMAT, R. CANAL, A. CALOMARDE, A. RUBIO Published in: International Journal of the Society of Materials Engineering for Resources, Issue 23/1, 2018, Page(s) 22-29, ISSN 1347-9725 Publisher: Society of Materials Engineering for Resources for Japan DOI: 10.5188/ijsmer.23.22 Ozone-Based Sequential Infiltration Synthesis of Al 2 O 3 Nanostructures in Symmetric Block Copolymer Author(s): Jacopo Frascaroli, Elena Cianci, Sabina Spiga, Gabriele Seguini, Michele Perego Published in: ACS Applied Materials & Interfaces, Issue 8/49, 2016, Page(s) 33933-33942, ISSN 1944-8244 Publisher: American Chemical Society DOI: 10.1021/acsami.6b11340 Atomistic simulation of ion irradiation of semiconductor heterostructures Author(s): C. Fridlund, J. Laakso, K. Nordlund, F. Djurabekova Published in: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Issue 409, 2017, Page(s) 14-18, ISSN 0168-583X Publisher: Elsevier BV DOI: 10.1016/j.nimb.2017.04.034 Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network Author(s): Serim Ilday, F. Ömer Ilday, René Hübner, Ty J. Prosa, Isabelle Martin, Gizem Nogay, Ismail Kabacelik, Zoltan Mics, Mischa Bonn, Dmitry Turchinovich, Hande Toffoli, Daniele Toffoli, David Friedrich, Bernd Schmidt, Karl-Heinz Heinig, Rasit Turan Published in: Nano Letters, Issue 16/3, 2016, Page(s) 1942-1948, ISSN 1530-6984 Publisher: American Chemical Society DOI: 10.1021/acs.nanolett.5b05158 Large fraction of crystal directions leads to ion channeling Author(s): K. Nordlund, F. Djurabekova, G. Hobler Published in: Physical Review B, Issue 94/21, 2016, Page(s) from 214109-1 to 214109-20, ISSN 1098-0121 Publisher: American Physical Society DOI: 10.1103/PhysRevB.94.214109 Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm Author(s): Xiaomo Xu, Karl-Heinz Heinig, Wolfhard Möller, Hans-Jürgen Engelmann, Nico Klingner, Ahmed Gharbi, Raluca Tiron, Johannes von Borany, Gregor Hlawacek Published in: Semiconductor Science and Technology, Issue 35/1, 2020, Page(s) 015021, ISSN 0268-1242 Publisher: Institute of Physics Publishing DOI: 10.1088/1361-6641/ab57ba Conference proceedings (4) Quantum dot location relevance into SET-FET circuits based on FinFET devices Author(s): Amat, Esteve; Moral, Alberto del; Bausells, Joan; Perez-Murano, Francesc; Klüpfel, Fabian Published in: Proc. Conference on Design of Circuits and Integrated Systems (DCIS), Issue IEEE Xplore, April 2019, 2019 Publisher: IEEE DOI: 10.1109/dcis.2018.8681478 3D simulation of silicon-based single-electron transistors Author(s): F. J. Klupfel, P. Pichler Published in: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Page(s) 77-80, ISBN 978-4-86348-610-2 Publisher: IEEE DOI: 10.23919/SISPAD.2017.8085268 Pillars fabrication by DSA lithography: material and process options Author(s): Gabriel Reynaud, Ahmed Gharbi, Patricia Pimenta-Barros, Olivia Saouaf, Laurent Pain, Raluca Tiron, Christophe Navarro, Célia Nicolet, Ian Cayrefourcq, Michele Perego, Francesc Pérez-Murano, Esteve Amat, Marta Fernández-Regúlez Published in: Advances in Patterning Materials and Processes XXXV, 2018, Page(s) 25, ISBN 9781-510616653 Publisher: SPIE DOI: 10.1117/12.2297414 Simulation of silicon-dot-based single-electron memory devices Author(s): F. J. Klupfel, A. Burenkov, J. Lorenz Published in: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, Page(s) 237-240, ISBN 978-1-5090-0818-6 Publisher: IEEE DOI: 10.1109/SISPAD.2016.7605191 Thesis and dissertations (1) Computer Simulation Methods of Ion Penetration in Matter Author(s): Christoffer Fridlund Published in: 2016, Page(s) 1 - 65 Publisher: Faculty of Science, University of Helsinki Searching for OpenAIRE data... There was an error trying to search data from OpenAIRE No results available
