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Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology

Deliverables

First pillars on SiO2 island layers available by DSA (free surface)

First pillars on SiO2 island layers available by DSA (free surface)

First pillars on SiO2 island layer available (20–50 nm) by EBDW

First pillars on SiO2 island layer available (20–50 nm) by EBDW

Functional characterization of RT CMOS-SET demonstrators

Functional characterization of CMOS-SET demonstrators

First delivery of wafer-scale pillars with Si nanodots for device fabrication

First delivery of wafer-scale pillars with Si nanodots for device fabrication

Report on predicted optimum device specifications for demonstrator fabrication

Report on predicted optimum device specifications for demonstrator fabrication

Report on stability studies of nanopillars

Report on stability studies of nanopillars under ion irradiation

Report on optimum processing conditions in planar stacks with HIM

Report on optimum processing conditions in planar stacks with HIM

Report on process simulation of single Si dot self-assembly

Report on process simulation of single Si dot self-assembly

First data from ion beam mixing simulations as input for kinetic Monte-Carlo simulations

First data from ion beam mixing simulations as input for kinetic Monte-Carlo simulations

Electrical characterization of functional nano-pillars

Electrical characterization of functional nano-pillars

Report on simulation of electrical performance of silicon nanodot single electron devices

Report on simulation of electrical performance of silicon nanodot single electron devices

Assessment of silicon nanodot SETs as low-energy dissipation devices

Assessment of silicon nanodot SETs as low-energy dissipation devices

Structural characterization of Si nanodot self-assembly

Structural characterization of Si nanodot self-assembly

Report on process definition

Report on process definition

Structural characterization of functional nano-pillars

Structural characterization of functional nano-pillars

Electrical characterization of Si nanodot self-assembly

Electrical characterization of Si nanodot self-assembly

Report on Si nanodot self-assembly in Si/SiO2/Si nanopillar stacks

Report on Si nanodot self-assembly in Si/SiO2/Si nanopillar stacks

Plan for fabrication of Si nanodot self-assem-bly by ion processing

Plan for fabrication of Si nanodot self-assem-bly by ion processing

Report on the first version of process simulator of ion implantation and mixing in Si/SiO2 nanostructures

Report on the first version of process simulator of ion implantation and mixing in Si/SiO2 nanostructures

Assessment of IETS and DA-SDT investiga-tion of defects at the Si/SiO2 interface

Assessment of IETS and DA-SDT investiga-tion of defects at the Si/SiO2 interface

Organization and realization Workshop 1: Tunneling devices: Theory and experiment

Organization and realization Workshop 1: Tunneling devices: Theory and experiment

Final version of process simulator of ion im-plantation and mixing in 3D Si/SiO2 nano-structures with the graphical user interface

Final version of process simulator of ion im-plantation and mixing in 3D Si/SiO2 nano-structures with the graphical user interface

Organization and realization Workshop 2: DSA: Block Co-Polymer and Beyond

Organization and realization Workshop 2: DSA: Block Co-Polymer and Beyond

Specification of process and device parameters

Specification of process and device parameters

Project web-page established and launched

Project web-page established and launched

Installation of an external industry board

Installation of an external industry board

Searching for OpenAIRE data...

Publications

Defect and density evolution under high-fluence ion irradiation of Si / SiO 2 heterostructures

Author(s): F. Djurabekova, C. Fridlund, K. Nordlund
Published in: Physical Review Materials, 4/1, 2020, Page(s) 013601-1 to 013601-12, ISSN 2475-9953
Publisher: American Physical Society
DOI: 10.1103/physrevmaterials.4.013601

Thermodynamics and ordering kinetics in asymmetric PS- b -PMMA block copolymer thin films

Author(s): Gabriele Seguini, Fabio Zanenga, Gianluca Cannetti, Michele Perego
Published in: Soft Matter, 16/23, 2020, Page(s) 5525-5533, ISSN 1744-683X
Publisher: Royal Society of Chemistry
DOI: 10.1039/d0sm00441c

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

Author(s): Santiago H Andany, Gregor Hlawacek, Stefan Hummel, Charlène Brillard, Mustafa Kangül, Georg E Fantner
Published in: Beilstein Journal of Nanotechnology, 11, 2020, Page(s) 1272-1279, ISSN 2190-4286
Publisher: Beilstein-Institut Zur Forderung der Chemischen Wissenschaften
DOI: 10.3762/bjnano.11.111

Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits

Author(s): E. Amat, F. Klupfel, J. Bausells, F. Perez-Murano
Published in: IEEE Transactions on Electron Devices, 66/10, 2019, Page(s) 4461-4467, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2019.2937141

Direct observation of ion-induced self-organization and ripple propagation processes in atomistic simulations

Author(s): A. Lopez-Cazalilla, F. Djurabekova, A. Ilinov, C. Fridlund, K. Nordlund
Published in: Materials Research Letters, 8/3, 2020, Page(s) 110-116, ISSN 2166-3831
Publisher: Taylor & Francis
DOI: 10.1080/21663831.2019.1711458

Computer modeling of single-layer nanocluster formation in a thin SiO 2 layer buried in Si by ion mixing and thermal phase decomposition

Author(s): Thomas Prüfer, Wolfhard Möller, Karl-Heinz Heinig, Daniel Wolf, Hans-Jürgen Engelmann, Xiaomo Xu, Johannes von Borany
Published in: Journal of Applied Physics, 125/22, 2019, Page(s) 225708, ISSN 0021-8979
Publisher: American Institute of Physics
DOI: 10.1063/1.5096451

Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

Author(s): M.-L. Pourteau, A. Gharbi, P. Brianceau, J.-A. Dallery, F. Laulagnet, G. Rademaker, R. Tiron, H.-J. Engelmann, J. von Borany, K.-H. Heinig, M. Rommel, L. Baier
Published in: Micro and Nano Engineering, 9, 2020, Page(s) 100074, ISSN 2590-0072
Publisher: Elsevier
DOI: 10.1016/j.mne.2020.100074

A Compact Model Based on Bardeen’s Transfer Hamiltonian Formalism for Silicon Single Electron Transistors

Author(s): Fabian J. Klupfel
Published in: IEEE Access, 7, 2019, Page(s) 84053-84065, ISSN 2169-3536
Publisher: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2019.2924913

Effect of the Density of Reactive Sites in P(S‐ r ‐MMA) Film during Al 2 O 3 Growth by Sequential Infiltration Synthesis

Author(s): Federica E. Caligiore, Daniele Nazzari, Elena Cianci, Katia Sparnacci, Michele Laus, Michele Perego, Gabriele Seguini
Published in: Advanced Materials Interfaces, 6/12, 2019, Page(s) 1900503, ISSN 2196-7350
Publisher: Wiley
DOI: 10.1002/admi.201900503

Balancing Block Copolymer Thickness over Template Density in Graphoepitaxy Approach

Author(s): Patricia Pimenta Barros, Ahmed Gharbi, Antoine Fouquet, Sandra Bos, Jérôme Hazart, Florian Delachat, Xavier Chevalier, Ian Cayrefourcq, Laurent Pain, Raluca Tiron
Published in: Macromolecular Materials and Engineering, 302/11, 2017, Page(s) 1700285, ISSN 1438-7492
Publisher: John Wiley & Sons Ltd.
DOI: 10.1002/mame.201700285

Absence of single critical dose for the amorphization of quartz under ion irradiation

Author(s): S Zhang, O H Pakarinen, M Backholm, F Djurabekova, K Nordlund, J Keinonen, T S Wang
Published in: Journal of Physics: Condensed Matter, 30/1, 2018, Page(s) 015403, ISSN 0953-8984
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-648x/aa9868

Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits

Author(s): Esteve Amat, Joan Bausells, Francesc Perez-Murano
Published in: IEEE Transactions on Electron Devices, 64/12, 2017, Page(s) 5172-5180, ISSN 0018-9383
Publisher: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2017.2765003

Site-controlled formation of single Si nanocrystals in a buried SiO 2 matrix using ion beam mixing

Author(s): Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek
Published in: Beilstein Journal of Nanotechnology, 9, 2018, Page(s) 2883-2892, ISSN 2190-4286
Publisher: Beilstein-Institut Zur Forderung der Chemischen Wissenschaften
DOI: 10.3762/bjnano.9.267

Ordering kinetics in two-dimensional hexagonal pattern of cylinder-forming PS- b -PMMA block copolymer thin films: Dependence on the segregation strength

Author(s): Gabriele Seguini, Fabio Zanenga, Michele Laus, Michele Perego
Published in: Physical Review Materials, 2/5, 2018, Page(s) from 055605-1 to 055605-6, ISSN 2475-9953
Publisher: American Physical Society (APS)
DOI: 10.1103/physrevmaterials.2.055605

Trimethylaluminum Diffusion in PMMA Thin Films during Sequential Infiltration Synthesis: In Situ Dynamic Spectroscopic Ellipsometric Investigation

Author(s): Elena Cianci, Daniele Nazzari, Gabriele Seguini, Michele Perego
Published in: Advanced Materials Interfaces, 5/20, 2018, Page(s) 1801016, ISSN 2196-7350
Publisher: John Wiley & Sons
DOI: 10.1002/admi.201801016

An embedded neutral layer for advanced surface affinity control in grapho-epitaxy directed self-assembly

Author(s): Florian Delachat, Ahmed Gharbi, Patricia Pimenta-Barros, Antoine Fouquet, Guillaume Claveau, Nicolas Posseme, Laurent Pain, Célia Nicolet, Christophe Navarro, Ian Cayrefourcq, Raluca Tiron
Published in: Nanoscale, 10/23, 2018, Page(s) 10900-10910, ISSN 2040-3364
Publisher: Royal Society of Chemistry
DOI: 10.1039/c8nr00123e

Review on suitable eDRAM configurations for next nano-metric electronics era

Author(s): E. AMAT, R. CANAL, A. CALOMARDE, A. RUBIO
Published in: International Journal of the Society of Materials Engineering for Resources, 23/1, 2018, Page(s) 22-29, ISSN 1347-9725
Publisher: Society of Materials Engineering for Resources for Japan
DOI: 10.5188/ijsmer.23.22

Ozone-Based Sequential Infiltration Synthesis of Al 2 O 3 Nanostructures in Symmetric Block Copolymer

Author(s): Jacopo Frascaroli, Elena Cianci, Sabina Spiga, Gabriele Seguini, Michele Perego
Published in: ACS Applied Materials & Interfaces, 8/49, 2016, Page(s) 33933-33942, ISSN 1944-8244
Publisher: American Chemical Society
DOI: 10.1021/acsami.6b11340

Atomistic simulation of ion irradiation of semiconductor heterostructures

Author(s): C. Fridlund, J. Laakso, K. Nordlund, F. Djurabekova
Published in: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 409, 2017, Page(s) 14-18, ISSN 0168-583X
Publisher: Elsevier BV
DOI: 10.1016/j.nimb.2017.04.034

Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network

Author(s): Serim Ilday, F. Ömer Ilday, René Hübner, Ty J. Prosa, Isabelle Martin, Gizem Nogay, Ismail Kabacelik, Zoltan Mics, Mischa Bonn, Dmitry Turchinovich, Hande Toffoli, Daniele Toffoli, David Friedrich, Bernd Schmidt, Karl-Heinz Heinig, Rasit Turan
Published in: Nano Letters, 16/3, 2016, Page(s) 1942-1948, ISSN 1530-6984
Publisher: American Chemical Society
DOI: 10.1021/acs.nanolett.5b05158

Large fraction of crystal directions leads to ion channeling

Author(s): K. Nordlund, F. Djurabekova, G. Hobler
Published in: Physical Review B, 94/21, 2016, Page(s) from 214109-1 to 214109-20, ISSN 1098-0121
Publisher: American Physical Society
DOI: 10.1103/PhysRevB.94.214109

Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Author(s): Xiaomo Xu, Karl-Heinz Heinig, Wolfhard Möller, Hans-Jürgen Engelmann, Nico Klingner, Ahmed Gharbi, Raluca Tiron, Johannes von Borany, Gregor Hlawacek
Published in: Semiconductor Science and Technology, 35/1, 2020, Page(s) 015021, ISSN 0268-1242
Publisher: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ab57ba

Quantum dot location relevance into SET-FET circuits based on FinFET devices

Author(s): Amat, Esteve; Moral, Alberto del; Bausells, Joan; Perez-Murano, Francesc; Klüpfel, Fabian
Published in: Proc. Conference on Design of Circuits and Integrated Systems (DCIS), IEEE Xplore, April 2019, 2019
Publisher: IEEE
DOI: 10.1109/dcis.2018.8681478

3D simulation of silicon-based single-electron transistors

Author(s): F. J. Klupfel, P. Pichler
Published in: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Page(s) 77-80, ISBN 978-4-86348-610-2
Publisher: IEEE
DOI: 10.23919/SISPAD.2017.8085268

Pillars fabrication by DSA lithography: material and process options

Author(s): Gabriel Reynaud, Ahmed Gharbi, Patricia Pimenta-Barros, Olivia Saouaf, Laurent Pain, Raluca Tiron, Christophe Navarro, Célia Nicolet, Ian Cayrefourcq, Michele Perego, Francesc Pérez-Murano, Esteve Amat, Marta Fernández-Regúlez
Published in: Advances in Patterning Materials and Processes XXXV, 2018, Page(s) 25, ISBN 9781-510616653
Publisher: SPIE
DOI: 10.1117/12.2297414

Simulation of silicon-dot-based single-electron memory devices

Author(s): F. J. Klupfel, A. Burenkov, J. Lorenz
Published in: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, Page(s) 237-240, ISBN 978-1-5090-0818-6
Publisher: IEEE
DOI: 10.1109/SISPAD.2016.7605191

Computer Simulation Methods of Ion Penetration in Matter

Author(s): Christoffer Fridlund
Published in: 2016, Page(s) 1 - 65
Publisher: Faculty of Science, University of Helsinki