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Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology

Deliverables

First pillars on SiO2 island layers available by DSA (free surface)

First pillars on SiO2 island layers available by DSA (free surface)

First pillars on SiO2 island layer available (20–50 nm) by EBDW

First pillars on SiO2 island layer available (20–50 nm) by EBDW

First delivery of wafer-scale pillars with Si nanodots for device fabrication

First delivery of wafer-scale pillars with Si nanodots for device fabrication

Report on predicted optimum device specifications for demonstrator fabrication

Report on predicted optimum device specifications for demonstrator fabrication

Report on stability studies of nanopillars

Report on stability studies of nanopillars under ion irradiation

Report on optimum processing conditions in planar stacks with HIM

Report on optimum processing conditions in planar stacks with HIM

First data from ion beam mixing simulations as input for kinetic Monte-Carlo simulations

First data from ion beam mixing simulations as input for kinetic Monte-Carlo simulations

Structural characterization of Si nanodot self-assembly

Structural characterization of Si nanodot self-assembly

Report on process definition

Report on process definition

Structural characterization of functional nano-pillars

Structural characterization of functional nano-pillars

Electrical characterization of Si nanodot self-assembly

Electrical characterization of Si nanodot self-assembly

Report on Si nanodot self-assembly in Si/SiO2/Si nanopillar stacks

Report on Si nanodot self-assembly in Si/SiO2/Si nanopillar stacks

Plan for fabrication of Si nanodot self-assem-bly by ion processing

Plan for fabrication of Si nanodot self-assem-bly by ion processing

Report on the first version of process simulator of ion implantation and mixing in Si/SiO2 nanostructures

Report on the first version of process simulator of ion implantation and mixing in Si/SiO2 nanostructures

Assessment of IETS and DA-SDT investiga-tion of defects at the Si/SiO2 interface

Assessment of IETS and DA-SDT investiga-tion of defects at the Si/SiO2 interface

Organization and realization Workshop 1: Tunneling devices: Theory and experiment

Organization and realization Workshop 1: Tunneling devices: Theory and experiment

Organization and realization Workshop 2: DSA: Block Co-Polymer and Beyond

Organization and realization Workshop 2: DSA: Block Co-Polymer and Beyond

Specification of process and device parameters

Specification of process and device parameters

Project web-page established and launched

Project web-page established and launched

Installation of an external industry board

Installation of an external industry board

Searching for OpenAIRE data...

Publications

3D simulation of silicon-based single-electron transistors

Author(s): F. J. Klupfel, P. Pichler
Published in: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Page(s) 77-80
DOI: 10.23919/SISPAD.2017.8085268

Pillars fabrication by DSA lithography: material and process options

Author(s): Gabriel Reynaud, Ahmed Gharbi, Patricia Pimenta-Barros, Olivia Saouaf, Laurent Pain, Raluca Tiron, Christophe Navarro, Célia Nicolet, Ian Cayrefourcq, Michele Perego, Francesc Pérez-Murano, Esteve Amat, Marta Fernández-Regúlez
Published in: Advances in Patterning Materials and Processes XXXV, 2018, Page(s) 25
DOI: 10.1117/12.2297414

Simulation of silicon-dot-based single-electron memory devices

Author(s): F. J. Klupfel, A. Burenkov, J. Lorenz
Published in: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, Page(s) 237-240
DOI: 10.1109/SISPAD.2016.7605191

Balancing Block Copolymer Thickness over Template Density in Graphoepitaxy Approach


Published in: ISSN 1438-7492
DOI: 10.1002/mame.201700285

Absence of single critical dose for the amorphization of quartz under ion irradiation

Author(s): S Zhang, O H Pakarinen, M Backholm, F Djurabekova, K Nordlund, J Keinonen, T S Wang
Published in: Journal of Physics: Condensed Matter, Issue 30/1, 2018, Page(s) 015403, ISSN 0953-8984
DOI: 10.1088/1361-648x/aa9868

Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits

Author(s): Esteve Amat, Joan Bausells, Francesc Perez-Murano
Published in: IEEE Transactions on Electron Devices, Issue 64/12, 2017, Page(s) 5172-5180, ISSN 0018-9383
DOI: 10.1109/ted.2017.2765003

Site-controlled formation of single Si nanocrystals in a buried SiO 2 matrix using ion beam mixing

Author(s): Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek
Published in: Beilstein Journal of Nanotechnology, Issue 9, 2018, Page(s) 2883-2892, ISSN 2190-4286
DOI: 10.3762/bjnano.9.267

Ordering kinetics in two-dimensional hexagonal pattern of cylinder-forming PS- b -PMMA block copolymer thin films: Dependence on the segregation strength

Author(s): Gabriele Seguini, Fabio Zanenga, Michele Laus, Michele Perego
Published in: Physical Review Materials, Issue 2/5, 2018, Page(s) from 055605-1 to 055605-6, ISSN 2475-9953
DOI: 10.1103/physrevmaterials.2.055605

An embedded neutral layer for advanced surface affinity control in grapho-epitaxy directed self-assembly

Author(s): Florian Delachat, Ahmed Gharbi, Patricia Pimenta-Barros, Antoine Fouquet, Guillaume Claveau, Nicolas Posseme, Laurent Pain, Célia Nicolet, Christophe Navarro, Ian Cayrefourcq, Raluca Tiron
Published in: Nanoscale, Issue 10/23, 2018, Page(s) 10900-10910, ISSN 2040-3364
DOI: 10.1039/c8nr00123e

Review on suitable eDRAM configurations for next nano-metric electronics era

Author(s): E. AMAT, R. CANAL, A. CALOMARDE, A. RUBIO
Published in: International Journal of the Society of Materials Engineering for Resources, Issue 23/1, 2018, Page(s) 22-29, ISSN 1347-9725
DOI: 10.5188/ijsmer.23.22

Atomistic simulation of ion irradiation of semiconductor heterostructures

Author(s): C. Fridlund, J. Laakso, K. Nordlund, F. Djurabekova
Published in: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Issue 409, 2017, Page(s) 14-18, ISSN 0168-583X
DOI: 10.1016/j.nimb.2017.04.034

Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network

Author(s): Serim Ilday, F. Ömer Ilday, René Hübner, Ty J. Prosa, Isabelle Martin, Gizem Nogay, Ismail Kabacelik, Zoltan Mics, Mischa Bonn, Dmitry Turchinovich, Hande Toffoli, Daniele Toffoli, David Friedrich, Bernd Schmidt, Karl-Heinz Heinig, Rasit Turan
Published in: Nano Letters, Issue 16/3, 2016, Page(s) 1942-1948, ISSN 1530-6984
DOI: 10.1021/acs.nanolett.5b05158

Large fraction of crystal directions leads to ion channeling

Author(s): K. Nordlund, F. Djurabekova, G. Hobler
Published in: Physical Review B, Issue 94/21, 2016, Page(s) from 214109-1 to 214109-20, ISSN 1098-0121
DOI: 10.1103/PhysRevB.94.214109

Computer Simulation Methods of Ion Penetration in Matter

Author(s): Christoffer Fridlund
Published in: 2016, Page(s) 1 - 65