Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology

Livrables

First pillars on SiO2 island layers available by DSA (free surface)
First pillars on SiO2 island layer available (20–50 nm) by EBDW

Functional characterization of RT CMOS-SET demonstrators

Functional characterization of CMOS-SET demonstrators

First delivery of wafer-scale pillars with Si nanodots for device fabrication
Report on predicted optimum device specifications for demonstrator fabrication
Report on stability studies of nanopillars

Report on stability studies of nanopillars under ion irradiation

Report on optimum processing conditions in planar stacks with HIM
Report on process simulation of single Si dot self-assembly
First data from ion beam mixing simulations as input for kinetic Monte-Carlo simulations
Electrical characterization of functional nano-pillars
Report on simulation of electrical performance of silicon nanodot single electron devices
Assessment of silicon nanodot SETs as low-energy dissipation devices
Structural characterization of Si nanodot self-assembly
Report on process definition
Structural characterization of functional nano-pillars
Electrical characterization of Si nanodot self-assembly
Report on Si nanodot self-assembly in Si/SiO2/Si nanopillar stacks
Plan for fabrication of Si nanodot self-assem-bly by ion processing
Report on the first version of process simulator of ion implantation and mixing in Si/SiO2 nanostructures
Assessment of IETS and DA-SDT investiga-tion of defects at the Si/SiO2 interface

Organization and realization Workshop 1: Tunneling devices: Theory and experiment
Final version of process simulator of ion im-plantation and mixing in 3D Si/SiO2 nano-structures with the graphical user interface
Organization and realization Workshop 2: DSA: Block Co-Polymer and Beyond

Specification of process and device parameters
Project web-page established and launched
Installation of an external industry board

Publications

Defect and density evolution under high-fluence ion irradiation of Si / SiO 2 heterostructures

Auteurs: F. Djurabekova, C. Fridlund, K. Nordlund
Publié dans: Physical Review Materials, Numéro 4/1, 2020, Page(s) 013601-1 to 013601-12, ISSN 2475-9953
Éditeur: American Physical Society
DOI: 10.1103/physrevmaterials.4.013601

Thermodynamics and ordering kinetics in asymmetric PS- b -PMMA block copolymer thin films

Auteurs: Gabriele Seguini, Fabio Zanenga, Gianluca Cannetti, Michele Perego
Publié dans: Soft Matter, Numéro 16/23, 2020, Page(s) 5525-5533, ISSN 1744-683X
Éditeur: Royal Society of Chemistry
DOI: 10.1039/d0sm00441c

An atomic force microscope integrated with a helium ion microscope for correlative nanoscale characterization

Auteurs: Santiago H Andany, Gregor Hlawacek, Stefan Hummel, Charlène Brillard, Mustafa Kangül, Georg E Fantner
Publié dans: Beilstein Journal of Nanotechnology, Numéro 11, 2020, Page(s) 1272-1279, ISSN 2190-4286
Éditeur: Beilstein-Institut Zur Forderung der Chemischen Wissenschaften
DOI: 10.3762/bjnano.11.111

Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits

Auteurs: E. Amat, F. Klupfel, J. Bausells, F. Perez-Murano
Publié dans: IEEE Transactions on Electron Devices, Numéro 66/10, 2019, Page(s) 4461-4467, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2019.2937141

Direct observation of ion-induced self-organization and ripple propagation processes in atomistic simulations

Auteurs: A. Lopez-Cazalilla, F. Djurabekova, A. Ilinov, C. Fridlund, K. Nordlund
Publié dans: Materials Research Letters, Numéro 8/3, 2020, Page(s) 110-116, ISSN 2166-3831
Éditeur: Taylor & Francis
DOI: 10.1080/21663831.2019.1711458

Computer modeling of single-layer nanocluster formation in a thin SiO 2 layer buried in Si by ion mixing and thermal phase decomposition

Auteurs: Thomas Prüfer, Wolfhard Möller, Karl-Heinz Heinig, Daniel Wolf, Hans-Jürgen Engelmann, Xiaomo Xu, Johannes von Borany
Publié dans: Journal of Applied Physics, Numéro 125/22, 2019, Page(s) 225708, ISSN 0021-8979
Éditeur: American Institute of Physics
DOI: 10.1063/1.5096451

Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration

Auteurs: M.-L. Pourteau, A. Gharbi, P. Brianceau, J.-A. Dallery, F. Laulagnet, G. Rademaker, R. Tiron, H.-J. Engelmann, J. von Borany, K.-H. Heinig, M. Rommel, L. Baier
Publié dans: Micro and Nano Engineering, Numéro 9, 2020, Page(s) 100074, ISSN 2590-0072
Éditeur: Elsevier
DOI: 10.1016/j.mne.2020.100074

A Compact Model Based on Bardeen’s Transfer Hamiltonian Formalism for Silicon Single Electron Transistors

Auteurs: Fabian J. Klupfel
Publié dans: IEEE Access, Numéro 7, 2019, Page(s) 84053-84065, ISSN 2169-3536
Éditeur: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/access.2019.2924913

Effect of the Density of Reactive Sites in P(S‐ r ‐MMA) Film during Al 2 O 3 Growth by Sequential Infiltration Synthesis

Auteurs: Federica E. Caligiore, Daniele Nazzari, Elena Cianci, Katia Sparnacci, Michele Laus, Michele Perego, Gabriele Seguini
Publié dans: Advanced Materials Interfaces, Numéro 6/12, 2019, Page(s) 1900503, ISSN 2196-7350
Éditeur: Wiley
DOI: 10.1002/admi.201900503

Balancing Block Copolymer Thickness over Template Density in Graphoepitaxy Approach

Auteurs: Patricia Pimenta Barros, Ahmed Gharbi, Antoine Fouquet, Sandra Bos, Jérôme Hazart, Florian Delachat, Xavier Chevalier, Ian Cayrefourcq, Laurent Pain, Raluca Tiron
Publié dans: Macromolecular Materials and Engineering, Numéro 302/11, 2017, Page(s) 1700285, ISSN 1438-7492
Éditeur: John Wiley & Sons Ltd.
DOI: 10.1002/mame.201700285

Absence of single critical dose for the amorphization of quartz under ion irradiation

Auteurs: S Zhang, O H Pakarinen, M Backholm, F Djurabekova, K Nordlund, J Keinonen, T S Wang
Publié dans: Journal of Physics: Condensed Matter, Numéro 30/1, 2018, Page(s) 015403, ISSN 0953-8984
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-648x/aa9868

Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits

Auteurs: Esteve Amat, Joan Bausells, Francesc Perez-Murano
Publié dans: IEEE Transactions on Electron Devices, Numéro 64/12, 2017, Page(s) 5172-5180, ISSN 0018-9383
Éditeur: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2017.2765003

Site-controlled formation of single Si nanocrystals in a buried SiO 2 matrix using ion beam mixing

Auteurs: Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek
Publié dans: Beilstein Journal of Nanotechnology, Numéro 9, 2018, Page(s) 2883-2892, ISSN 2190-4286
Éditeur: Beilstein-Institut Zur Forderung der Chemischen Wissenschaften
DOI: 10.3762/bjnano.9.267

Ordering kinetics in two-dimensional hexagonal pattern of cylinder-forming PS- b -PMMA block copolymer thin films: Dependence on the segregation strength

Auteurs: Gabriele Seguini, Fabio Zanenga, Michele Laus, Michele Perego
Publié dans: Physical Review Materials, Numéro 2/5, 2018, Page(s) from 055605-1 to 055605-6, ISSN 2475-9953
Éditeur: American Physical Society (APS)
DOI: 10.1103/physrevmaterials.2.055605

Trimethylaluminum Diffusion in PMMA Thin Films during Sequential Infiltration Synthesis: In Situ Dynamic Spectroscopic Ellipsometric Investigation

Auteurs: Elena Cianci, Daniele Nazzari, Gabriele Seguini, Michele Perego
Publié dans: Advanced Materials Interfaces, Numéro 5/20, 2018, Page(s) 1801016, ISSN 2196-7350
Éditeur: John Wiley & Sons
DOI: 10.1002/admi.201801016

An embedded neutral layer for advanced surface affinity control in grapho-epitaxy directed self-assembly

Auteurs: Florian Delachat, Ahmed Gharbi, Patricia Pimenta-Barros, Antoine Fouquet, Guillaume Claveau, Nicolas Posseme, Laurent Pain, Célia Nicolet, Christophe Navarro, Ian Cayrefourcq, Raluca Tiron
Publié dans: Nanoscale, Numéro 10/23, 2018, Page(s) 10900-10910, ISSN 2040-3364
Éditeur: Royal Society of Chemistry
DOI: 10.1039/c8nr00123e

Review on suitable eDRAM configurations for next nano-metric electronics era

Auteurs: E. AMAT, R. CANAL, A. CALOMARDE, A. RUBIO
Publié dans: International Journal of the Society of Materials Engineering for Resources, Numéro 23/1, 2018, Page(s) 22-29, ISSN 1347-9725
Éditeur: Society of Materials Engineering for Resources for Japan
DOI: 10.5188/ijsmer.23.22

Ozone-Based Sequential Infiltration Synthesis of Al 2 O 3 Nanostructures in Symmetric Block Copolymer

Auteurs: Jacopo Frascaroli, Elena Cianci, Sabina Spiga, Gabriele Seguini, Michele Perego
Publié dans: ACS Applied Materials & Interfaces, Numéro 8/49, 2016, Page(s) 33933-33942, ISSN 1944-8244
Éditeur: American Chemical Society
DOI: 10.1021/acsami.6b11340

Atomistic simulation of ion irradiation of semiconductor heterostructures

Auteurs: C. Fridlund, J. Laakso, K. Nordlund, F. Djurabekova
Publié dans: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Numéro 409, 2017, Page(s) 14-18, ISSN 0168-583X
Éditeur: Elsevier BV
DOI: 10.1016/j.nimb.2017.04.034

Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network

Auteurs: Serim Ilday, F. Ömer Ilday, René Hübner, Ty J. Prosa, Isabelle Martin, Gizem Nogay, Ismail Kabacelik, Zoltan Mics, Mischa Bonn, Dmitry Turchinovich, Hande Toffoli, Daniele Toffoli, David Friedrich, Bernd Schmidt, Karl-Heinz Heinig, Rasit Turan
Publié dans: Nano Letters, Numéro 16/3, 2016, Page(s) 1942-1948, ISSN 1530-6984
Éditeur: American Chemical Society
DOI: 10.1021/acs.nanolett.5b05158

Large fraction of crystal directions leads to ion channeling

Auteurs: K. Nordlund, F. Djurabekova, G. Hobler
Publié dans: Physical Review B, Numéro 94/21, 2016, Page(s) from 214109-1 to 214109-20, ISSN 1098-0121
Éditeur: American Physical Society
DOI: 10.1103/PhysRevB.94.214109

Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Auteurs: Xiaomo Xu, Karl-Heinz Heinig, Wolfhard Möller, Hans-Jürgen Engelmann, Nico Klingner, Ahmed Gharbi, Raluca Tiron, Johannes von Borany, Gregor Hlawacek
Publié dans: Semiconductor Science and Technology, Numéro 35/1, 2020, Page(s) 015021, ISSN 0268-1242
Éditeur: Institute of Physics Publishing
DOI: 10.1088/1361-6641/ab57ba

Quantum dot location relevance into SET-FET circuits based on FinFET devices

Auteurs: Amat, Esteve; Moral, Alberto del; Bausells, Joan; Perez-Murano, Francesc; Klüpfel, Fabian
Publié dans: Proc. Conference on Design of Circuits and Integrated Systems (DCIS), Numéro IEEE Xplore, April 2019, 2019
Éditeur: IEEE
DOI: 10.1109/dcis.2018.8681478

3D simulation of silicon-based single-electron transistors

Auteurs: F. J. Klupfel, P. Pichler
Publié dans: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2017, Page(s) 77-80, ISBN 978-4-86348-610-2
Éditeur: IEEE
DOI: 10.23919/SISPAD.2017.8085268

Pillars fabrication by DSA lithography: material and process options

Auteurs: Gabriel Reynaud, Ahmed Gharbi, Patricia Pimenta-Barros, Olivia Saouaf, Laurent Pain, Raluca Tiron, Christophe Navarro, Célia Nicolet, Ian Cayrefourcq, Michele Perego, Francesc Pérez-Murano, Esteve Amat, Marta Fernández-Regúlez
Publié dans: Advances in Patterning Materials and Processes XXXV, 2018, Page(s) 25, ISBN 9781-510616653
Éditeur: SPIE
DOI: 10.1117/12.2297414

Simulation of silicon-dot-based single-electron memory devices

Auteurs: F. J. Klupfel, A. Burenkov, J. Lorenz
Publié dans: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, Page(s) 237-240, ISBN 978-1-5090-0818-6
Éditeur: IEEE
DOI: 10.1109/SISPAD.2016.7605191

Computer Simulation Methods of Ion Penetration in Matter

Auteurs: Christoffer Fridlund
Publié dans: 2016, Page(s) 1 - 65
Éditeur: Faculty of Science, University of Helsinki

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