High Performance and High Yield Heterogeneous III-V/Si Photonic Integrated Circuits using a Thin and Uniform Bonding Layer

Project Information

PICTURE

Grant agreement ID: 780930

DOI 10.3030/780930

Project closed

EC signature date 21 November 2017

Start date 1 January 2018

End date 31 December 2021

Funded under

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Total cost € 4 050 477,50

EU contribution € 3 924 532,50

Coordinated by

III-V LAB
France

Deliverables

Documents, reports (1)

First press release on PICTURE project

See relevant WP description table.

Publications

Peer reviewed articles (1)

O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Author(s): Keshuang Li, Zizhuo Liu, Mingchu Tang, Mengya Liao, Dongyoung Kim, Huiwen Deng, Ana M. Sanchez, R. Beanland, Mickael Martin, Thierry Baron, Siming Chen, Jiang Wu, Alwyn Seeds, Huiyun Liu
Published in: Journal of Crystal Growth, Issue 511, 2019, Page(s) 56-60, ISSN 0022-0248
Publisher: Elsevier BV
DOI: 10.1016/j.jcrysgro.2019.01.016

Conference proceedings (1)

High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate

Author(s): Claire Besancon, Jean Decobert, Jean-Pierre Le Goec, Nicolas Vaissiere, Cécilia Dupré, Viviane Muffato, Frank Fournel, Christophe Jany, Franck Bassani, Sylvain David and Thierry Baron
Published in: Proceedings of Compound Semiconductor Week 2019, Issue Yearly, 2019
Publisher: Proceedings of Compound Semiconductor Week 2019