High Performance and High Yield Heterogeneous III-V/Si Photonic Integrated Circuits using a Thin and Uniform Bonding Layer

Informazioni relative al progetto

PICTURE

ID dell’accordo di sovvenzione: 780930

DOI 10.3030/780930

Progetto chiuso

Data della firma CE 21 Novembre 2017

Data di avvio 1 Gennaio 2018

Data di completamento 31 Dicembre 2021

Finanziato da

• INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)

Costo totale € 4 050 477,50

Contributo UE € 3 924 532,50

Coordinato da

III-V LAB
France

Risultati finali

Documents, reports (1)

First press release on PICTURE project

See relevant WP description table.

Pubblicazioni

Peer reviewed articles (1)

O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Autori: Keshuang Li, Zizhuo Liu, Mingchu Tang, Mengya Liao, Dongyoung Kim, Huiwen Deng, Ana M. Sanchez, R. Beanland, Mickael Martin, Thierry Baron, Siming Chen, Jiang Wu, Alwyn Seeds, Huiyun Liu
Pubblicato in: Journal of Crystal Growth, Numero 511, 2019, Pagina/e 56-60, ISSN 0022-0248
Editore: Elsevier BV
DOI: 10.1016/j.jcrysgro.2019.01.016

Conference proceedings (1)

High-quality Epitaxial Growth of AlGaInAs-based Active Structure on a Directly-Bonded InPoSi Substrate

Autori: Claire Besancon, Jean Decobert, Jean-Pierre Le Goec, Nicolas Vaissiere, Cécilia Dupré, Viviane Muffato, Frank Fournel, Christophe Jany, Franck Bassani, Sylvain David and Thierry Baron
Pubblicato in: Proceedings of Compound Semiconductor Week 2019, Numero Yearly, 2019
Editore: Proceedings of Compound Semiconductor Week 2019