BEOL technology platform based on ferroelectric synaptic devices for advanced neuromorphic processors

CORDIS fornisce collegamenti ai risultati finali pubblici e alle pubblicazioni dei progetti ORIZZONTE.

I link ai risultati e alle pubblicazioni dei progetti del 7° PQ, così come i link ad alcuni tipi di risultati specifici come dataset e software, sono recuperati dinamicamente da .OpenAIRE .

Risultati finali

Report on final chip with CMOS and BEOL FeFET

IBM and HZB will deliver a report illustrating the structural integration cross section flow and the functionality of the chip

Ferroelectric multilayer engineering for FTJ

Report on the thinnest attainable MFM FTJs with sufficiently high ON currents which could improve the sensing of BEOLintegrated FTJ devices and circuits The devices will necessarily meet the requirements for BEOL integration and neuromorphic applications

Dissemination and communication activities report (Years 1+2)

Annual report on the dissemination actions taken to promote the main project achievements as well as interactions and synergies with related industrial and research initiatives T61

Final FTJ SPICE Model based on D2.2, (D2.4 update)

Final FTJ SPICE Model based on D22 D24 update

Design and optimization of composite stacks in FTJ

This deliverable is a report on the final optimized FTJ stack Based on the models developed in T41 and on physical parameters and insight conveyed by abinitio calculations in T42 an extensive study of design and optimization of the composite stack in FTJs will be performed Different options for stack composition will be addressed

Phd teaching module prepared

We will prepare a teaching module for the project intern PhD students to speed up their learning in the field of ferroelectric Hf(Zr)O2-based devices. The courses will be used in a teaching session that we plan to perform in conjunction with a project meeting.

Communication and online strategy and presence

This report will establish a homogeneous visual identity for the project, including guidelines and templates for producing reports, presentations and the website. Furthermore, the project web site will be launched at the start of the projectproviding information on partners, plans, goals and activities. Social media presence, including Twitter and LinkedIn profiles, will be created.

Final FeFET SPICE Model based on D3.2, D3.3 (D3.4 update)

Final FeFET SPICE Model based on D32 D33 D34 update

Dissemination and communication activities report (Years 1+2+3)

Annual report on the dissemination actions taken to promote the main project achievements as well as interactions and synergies with related industrial and research initiatives T61

Dissemination and communication activities report (Year 1)

Annual report on the dissemination actions taken to promote the main project achievements, as well as interactions and synergies with related industrial and research initiatives (T6.1).

Neuromorphic chips packaged

This deliverable will be a report of the successful packaging and delivering of the neuromorphic chips to UZH and UNIBI for detailed characterization in T55

Demonstrator teaching module prepared

Here we will prepare lectures and labs for establishing a new course that will train a new generation of researchers to design use and apply hybrid CMOSFeFET or CMOSFTJ spiking neural network architectures Particular emphasis will be given to the learning and plasticity circuits which represent the key component of the project

Provide initial FTJ SPICE model for adoption in Task 5.1.

NaMlab will provide a first version of a SPICE model to Task 5.1. The model describes the basic electrical characteristics of the FTJ devices. The model will be based on an already available model for the ferroelectric switching and available FTJ measurement data. The model will then be refined throughout the project according the development of the FTJ devices.

Provide initial FeFET SPICE model for adoption in Task 5.1

NaMlab will provide a first version of a SPICE model to Task 5.1. The model describes the basic electrical characteristics of the FeFET devices. The model will be based on an already available FEOL FeFET model. The model will then be refined throughout the project according the development of the FeFET devices.

Demonstration of on-line learning and classification

This deliverable will consist of a demonstration of on-line learning and classification. The demonstration will be used to evaluate performances of the neuromorphic processor with respect to a suite of standard and project specific benchmarks.

Pubblicazioni

Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing

Autori: Suzanne Lancaster; Quang T. Duong; Erika Covi; Thomas Mikolajick; Stefan Slesazeck
Pubblicato in: IEEE 48th European Solid State Circuits Conference (ESSCIRC) 2022, 2022
Editore: IEEE
DOI: 10.1109/esscirc55480.2022.9911392

Robust Spiking Attractor Networks with a Hard Winner-Take-All Neuron Circuit

Autori: Madison Cotteret, Ole Richter, Michele Mastella, Hugh Greatorex, Ella Janotte, Willian Soares Girão, Martin Ziegler, Elisabetta Chicca
Pubblicato in: IEEE International Symposium on Circuits and Systems (ISCAS) 2023, 2023
Editore: IEEE
DOI: 10.1109/iscas46773.2023.10181513

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions

Autori: R. Fontanini; J. Barbot; M. Segatto; S. Lancaster; Q. Duong; F. Driussi; L. Grenouillet; F. Triozon; J. Coignus; T. Mikolajick; S. Slesazeck; D. Esseni
Pubblicato in: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021
Editore: IEEE
DOI: 10.1109/essderc53440.2021.9631812

Stochastic dendrites enable online learning in mixed-signal neuromorphic processing systems

Autori: Cartiglia, Matteo; Rubino, Arianna; Narayanan, Shyam; Frenkel, Charlotte; Haessig, Germain; Indiveri, Giacomo; Payvand, Melika
Pubblicato in: 2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022
Editore: IEEE
DOI: 10.1109/iscas48785.2022.9937833

High-Conductance, Ohmic-like HfZrO 4 Ferroelectric Memristor

Autori: Laura Begon-Lours; Mattia Halter; Youri Popoff; Zhenming Yu; Donato Francesco Falcone; Bert Jan Offrein
Pubblicato in: ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, ISBN 978-1-6654-3751-6
Editore: IEEE
DOI: 10.1109/esscirc53450.2021.9567870

Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices

Autori: David Esseni, Francesco Driussi, Daniel Lizzit, Marco Massarotto, Mattia Segatto
Pubblicato in: Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2023
Editore: IEEE
DOI: 10.48550/arxiv.2210.13382

Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions

Autori: M. Segatto; M. Massarotto; S. Lancaster; Q. T. Duong; A. Affanni; R. Fontanini; F. Driussi; D. Lizzit; T. Mikolajick; S. Slesazeck; D. Esseni
Pubblicato in: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021
Editore: IEEE
DOI: 10.1109/essderc55479.2022.9947185

Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects

Autori: Daniel Lizzit, Thomas Bernardi, David Esseni
Pubblicato in: IEEE European Solid-State Device Research Conference (ESSDERC) 2022, 2022
Editore: IEEE
DOI: 10.1109/essderc55479.2022.9947169

Synaptic Normalisation for On-Chip Learning in Analog CMOS Spiking Neural Networks

Autori: Michele Mastella, Hugh Greatorex, Madison Cotteret, Ella Janotte, Willian Soares Girão, Ole Richter, Elisabetta Chicca
Pubblicato in: International Conference on Neuromorphic Systems 2023, 2023
Editore: ACM Press
DOI: 10.1145/3589737.3606007

A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

Autori: Laura Begon-Lours, Mattia Halter, Diana Davila Pineda, Youri Popoff, Valeria Bragaglia, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein
Pubblicato in: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, Pagina/e 1-3, ISBN 978-1-7281-8176-9
Editore: IEEE
DOI: 10.1109/edtm50988.2021.9420886

Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions

Autori: Lorenzo Benatti, Paolo Pavan, Francesco Maria Puglisi
Pubblicato in: IEEE International Reliability Physics Symposium (IRPS) 2022, 2022
Editore: IEEE
DOI: 10.1109/irps48227.2022.9764602

A Subthreshold Second-Order Integration Circuit for Versatile Synaptic Alpha Kernel and Trace Generation

Autori: Ole Richter, Hugh Greatorex, Benjamin Hučko, Madison Cotteret, Willian Soares Girão, Ella Janotte, Michele Mastella, E. Chicca
Pubblicato in: International Conference on Neuromorphic Systems 2023, 2023
Editore: ACM Press
DOI: 10.1145/3589737.360600

Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes

Autori: Suzanne Lancaster, Mattia Segatto, Cláudia Silva, Benjamin Max, Thomas Mikolajick, David Esseni, Francesco Driussi, Stefan Slesazeck
Pubblicato in: Device Research Conference (DRC) 2023, 2023
Editore: IEEE
DOI: 10.1109/drc58590.2023.10187018

The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging

Autori: Lorenzo Benatti, Sara Vecchi, Milan Pesic, Francesco Maria Puglisi
Pubblicato in: IEEE International Reliability Physics Symposium (IRPS) 2023, 2023
Editore: IEEE
DOI: 10.1109/irps48203.2023.10118229

Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories

Autori: Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Laura Begon-Lours, Athanasios Dimoulas
Pubblicato in: IEEE European Solid-State Device Research Conference (ESSDERC) 2021, 2021
Editore: IEEE
DOI: 10.1109/essderc53440.2021.9631382

Understanding the Reliability of Ferroelectric Tunnel Junction Operations using an Advanced Small-Signal Model

Autori: Lorenzo Benatti, Francesco Maria Puglisi
Pubblicato in: IEEE International Workshop Integrated Reliability (IIRW) 2021, 2021
Editore: IEEE
DOI: 10.1109/iirw53245.2021.9635621

Impedance Spectroscopy of Ferroelectric Capacitors and Ferroelectric Tunnel Junctions

Autori: Lorenzo Benatti, Sara Vecchi, Francesco Maria Puglisi
Pubblicato in: IEEE International Integrated Reliability Workshop (IIRW) 2022, 2022
Editore: IEEE
DOI: 10.1109/iirw56459.2022.10032741

Ferroelectric Tunneling Junctions for Edge Computing

Autori: Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philip Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck
Pubblicato in: 2021 IEEE International Symposium on Circuits and Systems (ISCAS), 2021, Pagina/e 1-5, ISBN 978-1-7281-9201-7
Editore: IEEE
DOI: 10.1109/iscas51556.2021.9401800

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

Autori: D. Esseni, R. Fontanini, D. Lizzit, M. Massarotto, F. Driussi, M. Loghi
Pubblicato in: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, Pagina/e 1-3, ISBN 978-1-7281-8176-9
Editore: IEEE
DOI: 10.1109/edtm50988.2021.9420848

Neuromorphic analog circuits for robust on-chip always-on learning in spiking neural networks

Autori: Arianna Rubino; Matteo Cartiglia; Melika Payvand; Giacomo Indiveri
Pubblicato in: IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS) 2023, 2023
Editore: IEEE
DOI: 10.1109/aicas57966.2023.10168620

Ultra-Low Power Silicon Neuron Circuit for Extreme-Edge Neuromorphic Intelligence

Autori: Arianna Rubino, Melika Payvand, Giacomo Indiveri
Pubblicato in: 27th IEEE International Conference on Electronics Circuits and Systems, 2020
Editore: IEEE
DOI: 10.1109/icecs46596.2019.8964713

Bridging Large-Signal and Small-Signal Responses of Hafnium-Based Ferroelectric Tunnel Junctions

Autori: M. Massarotto, M. Segatto, F. Driussi; A. Affanni, S. Lancaster, S. Slesazeck, T. Mikolajick, D. Esseni
Pubblicato in: International Conference on Microelectronic Test Structure (ICMTS) 2023, 2023
Editore: IEEE
DOI: 10.1109/icmts55420.2023.10094178

Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation

Autori: Daniel Lizzit; David Esseni
Pubblicato in: ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021
Editore: IEEE
DOI: 10.1109/essderc53440.2021.9631764

A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices

Autori: Narayanan, Shyam; Covi, Erika; Havel, Viktor; Frenkel, Charlotte; Lancaster, Suzanne; Duong, Quang; Slesazeck, Stefan; Mikolajick, Thomas; Payvand, Melika; Indiveri, Giacomo
Pubblicato in: 2022 IEEE International Symposium on Circuits and Systems (ISCAS), 2022
Editore: IEEE
DOI: 10.1109/iscas48785.2022.9937555

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications

Autori: L. Grenouillet, J. Barbot, J. Laguerre, S. Martin, C. Carabasse, M. Louro, M. Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, T. Magis, C. Jahan, F. Andrieu, J. Coignus
Pubblicato in: IEEE International Reliability Physics Symposium (IRPS) 2023, 2023
Editore: IEEE
DOI: 10.1109/irps48203.2023.10118099

Modelling and design of FTJs as high reading-impedance synaptic devices

Autori: R. Fontanini, M. Massarotto, R. Specogna, F. Driussi, M. Loghi, D. Esseni
Pubblicato in: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, Pagina/e 1-3, ISBN 978-1-7281-8176-9
Editore: IEEE
DOI: 10.1109/edtm50988.2021.9420863

The Electrode-Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO-Based Ferroelectric Capacitors

Autori: Ruben Alcala, Monica Materano, Patrick D. Lomenzo, Pramoda Vishnumurthy, Wassim Hamouda, Catherine Dubourdieu, Alfred Kersch, Nicolas Barrett, Thomas Mikolajick, Uwe Schroeder
Pubblicato in: Advanced Functional Materials, 2023, ISSN 1616-301X
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202303261

Emerging Technologies and Systems for Biologically Plausible Implementations of Neural Functions

Autori: Erika Covi, Elisa Donati, Stefano Brivio, Hadi Heidari
Pubblicato in: Frontiers in Neuroscience, 2022, ISSN 1662-4548
Editore: Frontiers Research Foundation
DOI: 10.3389/fnins.2022.863680

CMOS back-end-of-line compatible ferroelectric tunnel junction devices

Autori: Veeresh Deshpande; Keerthana Shajil Nair; Keerthana Shajil Nair; Marco Holzer; Marco Holzer; Sourish Banerjee; Catherine Dubourdieu; Catherine Dubourdieu
Pubblicato in: Applied Physics Letters, Numero 9, 2021, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2021.108054

Electronic Synapses Enabled by an Epitaxial SrTiO3-δ / Hf0.5Zr0.5O2 Ferroelectric Field-Effect Memristor Integrated on Silicon

Autori: Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Dong Jik Kim, Wassim Hamouda, Cosmin Istrate, Lucian Pintilie, Martin Schmidbauer, Catherine Dubourdieu, Athanasios Dimoulas
Pubblicato in: Advanced Functional materials, 2023, ISSN 1616-301X
Editore: John Wiley & Sons Ltd.
DOI: 10.1002/adfm.202311767

From Ferroelectric Material Optimization to Neuromorphic

Autori: Thomas Mikolajick, Min Hyuk Park, Laura Begon-Lours, Stefan Slesazeck
Pubblicato in: Advanced Materials, 2023, ISSN 1521-4095
Editore: Wiley
DOI: 10.1002/adma.202206042

Linking the Intrinsic Electrical Response of Ferroelectric Devices to Material Properties by means of Impedance Spectroscopy

Autori: Lorenzo Benatti, Sara Vecchi, Francesco Maria Puglisi
Pubblicato in: IEEE Transactions on Device and Materials Reliability, 2023, ISSN 1558-2574
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tdmr.2023.3261441

Hf0.5Zr0.5O2-Based Germanium Ferroelectric p-FETs for Nonvolatile Memory Applications

Autori: Christina Zacharaki; Stefanos Chaitoglou; Nikitas Siannas; Polychronis Tsipas; Athanasios Dimoulas
Pubblicato in: ACS Applied Electronic Materials, 2022, ISSN 2637-6113
Editore: American Chemical Society
DOI: 10.1021/acsaelm.2c00324

Adaptive Extreme Edge Computing for Wearable Devices

Autori: Erika Covi, Elisa Donati, Xiangpeng Liang, David Kappel, Hadi Heidari, Melika Payvand, Wei Wang
Pubblicato in: Frontiers in Neuroscience, Numero 15, 2021, ISSN 1662-453X
Editore: Frontiers Media
DOI: 10.3389/fnins.2021.611300

Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware

Autori: Laura Bégon‐Lours; Mattia Halter; Francesco Maria Puglisi; Lorenzo Benatti; Donato Francesco Falcone; Youri Popoff; Diana Dávila Pineda; Marilyne Sousa; Bert Jan Offrein
Pubblicato in: Advanced Electronic Materials, 2022, ISSN 2199-160x
Editore: Wiley Open Access
DOI: 10.1002/aelm.202101395

Analog Resistive Switching in BEOL, Ferroelectric Synaptic Weights

Autori: Laura Begon-Lours; Mattia Halter; Youri Popoff; Z. Yu; D.F. Falcone; D. Davila; Valeria Bragaglia; A. La Porta; Daniel Jubin; Jean Fompeyrine; Bert Jan Offrein
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 33, 2021, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2021.3108523

Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel

Autori: Wen, Xin; Halter, Mattia; Bégon-Lours, Laura; Luisier, Mathieu
Pubblicato in: Frontiers in Nanotechnology, 2023, ISSN 2673-3013
Editore: Frontiers Media
DOI: 10.3929/ethz-b-000594774

Impedance Investigation of MIFM Ferroelectric Tunnel Junction Using a Comprehensive Small-Signal Model

Autori: LORENZO BENATTI; Francesco Maria PUGLISI
Pubblicato in: IEEE Transactions on Device and Materials Reliability, 2022, ISSN 1530-4388
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tdmr.2022.3182941

Investigating charge trapping in ferroelectric thin films through transient measurements

Autori: Suzanne Lancaster; Patrick D. Lomenzo; Moritz Engl; Bohan Xu; Thomas Mikolajick; Uwe Schroeder; Stefan Slesazeck
Pubblicato in: Frontiers in Nanotechnology, 2023, ISSN 2673-3013
Editore: Frontiers Media
DOI: 10.3389/fnano.2022.939822

A multi-pulse wakeup scheme for on-chip operation of devices based on ferroelectric doped HfO2 thin films

Autori: S. Lancaster, T. Mikolajick, S. Slesazeck
Pubblicato in: Applied Physics Letters (APL), 2022, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0078106

Reliability aspects of ferroelectric TiN/Hf 0.5 Zr 0.5 O 2 /Ge capacitors grown by plasma assisted atomic oxygen deposition

Autori: C. Zacharaki, P. Tsipas, S. Chaitoglou, L. Bégon-Lours, M. Halter, A. Dimoulas
Pubblicato in: Applied Physics Letters, Numero 117/21, 2020, Pagina/e 212905, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1063/5.0029657

Spike-based local synaptic plasticity: A survey of computational models and neuromorphic circuits

Autori: Lyes Khacef; Philipp Klein; Matteo Cartiglia; Arianna Rubino; Giacomo Indiveri; Elisabetta Chicca
Pubblicato in: Neuromorphic Computing and Engineering, 2023, ISSN 2634-4386
Editore: IOP Publishing
DOI: 10.1088/2634-4386/ad05da

Versatile experimental setup for FTJ characterization

Autori: M. Massarotto; F. Driussi; A. Affanni; S. Lancaster; S. Slesazeck; T. Mikolajick; D. Esseni
Pubblicato in: Solid-State Electronics, 2022, ISSN 0038-1101
Editore: Pergamon Press Ltd.
DOI: 10.1016/j.sse.2022.108364

Ultra-Low-Power FDSOI Neural Circuits for Extreme-Edge Neuromorphic Intelligence

Autori: Arianna Rubino, Can Livanelioglu, Ning Qiao, Melika Payvand, Giacomo Indiveri
Pubblicato in: IEEE Transactions on Circuits and Systems I: Regular Papers, Numero 68/1, 2021, Pagina/e 45-56, ISSN 1549-8328
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/tcsi.2020.3035575

Crossbar operation of BiFeO3/Ce–CaMnO3 ferroelectric tunnel junctions: From materials to integration

Autori: Mattia Halter; Elisabetta Morabito; Antonis Olziersky; Cécile Carrétéro; André Chanthbouala; Donato Francesco Falcone; Bert Jan Offrein; Laura Bégon-Lours
Pubblicato in: Journal of Materials Research, 2023, ISSN 0884-2914
Editore: Materials Research Society
DOI: 10.1557/s43578-023-01158-8

Metastable ferroelectricity driven by depolarization fields in ultrathin Hf0.5Zr0.5O2

Autori: Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou, Laura Bégon-Lours, Cosmin Istrate, Lucian Pintilie, Athanasios Dimoulas
Pubblicato in: Communications Physics, 2022, ISSN 2399-3650
Editore: Nature Physics
DOI: 10.1038/s42005-022-00951-x

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Autori: José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang,Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñigu
Pubblicato in: APL Materials, 2023, ISSN 2166-532X
Editore: American Institute of Physics (AIP)
DOI: 10.1063/5.0148068

Reduced fatigue and leakage of ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface

Autori: H Alex Hsain; Younghwan Lee; Suzanne Lancaster; Patrick D Lomenzo; Bohan Xu; Thomas Mikolajick; Uwe Schroeder; Gregory N Parsons; Jacob L Jones
Pubblicato in: Nanotechnology, 2023, ISSN 0957-4484
Editore: Institute of Physics Publishing
DOI: 10.1088/1361-6528/acad0a

Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO 4 /TiO x Junctions

Autori: Laura Bégon-Lours, Mattia Halter, Youri Popoff, Bert Jan Offrein
Pubblicato in: physica status solidi (RRL) – Rapid Research Letters, Numero 15/5, 2021, Pagina/e 2000524, ISSN 1862-6254
Editore: Wiley - VCH Verlag GmbH & CO. KGaA
DOI: 10.1002/pssr.202000524

Analytical Procedure for the Extraction of Material Parameters in Antiferroelectric ZrO2

Autori: Mattia Segatto; Filippo Rupil; David Esseni
Pubblicato in: IEEE Transactions on Electron Devices, 2023, ISSN 1557-9646
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2023.3265626

A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide

Autori: Mattia Halter; Laura Bégon-Lours; Marilyne Sousa; Youri Popoff; Ute Drechsler; Valeria Bragaglia; Bert Jan Offrein
Pubblicato in: Communications Materials, 2023, ISSN 2662-4443
Editore: Nature research
DOI: 10.1038/s43246-023-00342-x

Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights

Autori: Laura Bégon-Lours; Mattia Halter; Marilyne Sousa; Youri Popoff; Diana Dávila Pineda; Donato Francesco Falcone; Zhenming Yu; Steffen Reidt; Lorenzo Benatti; Francesco Maria Puglisi; Bert Jan Offrein
Pubblicato in: Neuromorphic Computing and Engineering, 2022, ISSN 2634-4386
Editore: IOP Publishing
DOI: 10.1088/2634-4386/ac5b2d

Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures

Autori: Daniel Lizzit; David ESSENI; Mattia Segatto; Francesco Driussi; Riccardo Fontanini
Pubblicato in: IEEE Journal of the Electron Devices Society, 2022, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2022.3164652

Novel experimental methodologies to reconcile large- and small-signal responses of Hafnium-based Ferroelectric Tunnel Junctions

Autori: Marco Massarotto; Francesco Driussi; Antonio Affanni; Suzanne Lancaster; Stefan Slesazeck; Thomas Mikolajick; David Esseni
Pubblicato in: Solid-State Electronics, 2023, ISSN 1879-2405
Editore: Elsevier
DOI: 10.1016/j.sse.2022.108569

Cycling waveform dependent wake up and ON/OFF ratio in Metal-Dielectric-Ferroelectric-Metal FTJ devices

Autori: Keerthana Shajil Nair, Marco Holzer, Catherine Dubourdieu, and Veeresh Deshpande
Pubblicato in: Applied Physics Letters (APL), 2023, ISSN 0003-6951
Editore: American Institute of Physics
DOI: 10.1021/acsaelm.2c01492

Interplay Between Charge Trapping and Polarization Switching in BEOL-Compatible Bilayer Ferroelectric Tunnel Junctions

Autori: R. Fontanini; J. Barbot; M. Segatto; S. Lancaster; Q. Duong; F. Driussi; L. Grenouillet; L. Triozon; J. Coignus; T. Mikolajick; S. Slesazeck; D. Esseni
Pubblicato in: IEEE Journal of the Electron Devices Society, Numero 13, 2022, ISSN 2168-6734
Editore: Institute of Electrical and Electronics Engineers Inc.
DOI: 10.1109/jeds.2022.3171217

Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

Autori: R. Fontanini; M. Segatto; K. S. Nair; M. Holzer; F. Driussi; I. Hausler; C. T. Koch; C. Dubourdieu; V. Deshpande; D. Esseni
Pubblicato in: IEEE Transactions on Electron Devices, Numero 8, 2022, ISSN 0018-9383
Editore: Institute of Electrical and Electronics Engineers
DOI: 10.1109/ted.2022.3175684

Neuromorphic devices based on fluorite‐structured ferroelectrics

Autori: Dong Hyun Lee; Geun Hyeong Park; Se Hyun Kim; Ju Yong Park; Kun Yang; Stefan Slesazeck; Thomas Mikolajick; Min Hyuk Park
Pubblicato in: InfoMat, 2022, ISSN 2567-3165
Editore: Wiley Open Access
DOI: 10.1002/inf2.12380

Hafnia-Based Double-Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing

Autori: Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick
Pubblicato in: ACS Applied Electronic Materials, Numero 2/12, 2020, Pagina/e 4023-4033, ISSN 2637-6113
Editore: American Chemical Society
DOI: 10.1021/acsaelm.0c00832

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