On the optimization of the tunneling barriers for efficient spin-charge conversion and magnetization readout, further work is required on the fine-tuning of the barrier quality, through tweaks in the annealing temperature and optimal thickness. The optimized fabrication process should provide a solid platform to test other materials beyond those proposed in the initial proposal, such as Ta, -W, or other Bi-based alloys. Regarding topological insulators, the poor quality and issues imposed by sputtered BixSe1-x suggest that other options grown by molecular beam epitaxy will be more advantageous for highly efficient spin-charge conversion, even though extra care must be taken during the fabrication process to avoid unintentional damage and/or doping of the material. Regarding oxide-based materials, such as the iridates, great emphasis should be put on performing and testing other high spin-orbit coupling correlated oxides within the framework of all-electrical spin-charge conversion, something particularly lacking in the literature. The results of SPECTER regarding all-electrical spin-charge conversion in SrIrO3 should motivate further studies in other materials.
Besides the scientific advances achieved within the proposed work packages of SPECTER, the researcher also studied an additional highly resistive and high spin-orbit material, elemental tellurium, which was found to possess chirality-dependent electrical charge-to-spin conversion. The results were published in F. Calavalle, M. Suárez-Rodríguez, B. Martín-García, A. Johansson, D. C. Vaz, et al., Nature Materials 21, 526 (2022)
https://doi.org/10.1038/s41563-022-01211-7(odnośnik otworzy się w nowym oknie)). Lastly, as stated in the initial proposal, one of the long-term consequences of SPECTER was to implement the optimized spin-charge conversion nanodevices in magnetoelectric spin-orbit devices, a concept proposed by Intel for energy-efficient computation beyond the current CMOS paradigm. Through direct collaboration with Intel, the researcher fabricated CoFe/Pt nanodevices directly on multiferroic-based heterostructures, to perform both electrical reading of magnetic states using spin-charge conversion and magnetization switching (writing) using the magnetoelectric effect and exchange coupling in BiFeO3/CoFe interfaces. These experiments resulted in the world’s first experimental demonstration of the magnetoelectric spin-orbit device, as well as an important result towards voltage-control of magnetism, crucial for the next generation of energy-efficient non-volatile logic and memory applications. The work was presented and published as a conference paper (D. C. Vaz et al., IEEE International Electron Devices Meeting (IEDM), 32.4. 1-32.4. 4 (2021)
https://doi.org/10.1109/IEDM19574.2021.9720677(odnośnik otworzy się w nowym oknie)).