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Zawartość zarchiwizowana w dniu 2022-12-23

Ion tracks in superhard semiconductors as basic elements for nanoscale electronic devices and matrices

Cel



A novel approach to the development of nanometre size electronic and optoelectronic devices arranged in superdense electronic circuits on the basis of doped ion tracks in superhard semiconductors will be studied.

Nanoscale electronic devices are supposed to be made of individual tracks doped with electrically and optically active impurities. The electronic circuits comprising such devices will be realised by an ion channelling interference technique and making electrical contacts by tunnelling microscopy technique. The participants in this project have already shown the possibility in principle of ion track formation in diamond and cubic boron nitride, doping the ion tracks with impurities and construction of a new type of microelectronic devices with intrinsic active zones which can be scaled down to a nanometre region. The packaging density of such nanoelectric matrices is expected to exceed a value of 10 12 devices/cm {2}. These matrices must possess very high chemical, thermal, mechanical and radiation resistances as well as a long time stability inherent to superhard semiconductors.

The first steps on the way to the ion track based nanoelectronics have already been made by the participants. Many features of the ion tracks in diamond and cubic boron nitride (including ion track assisted diffusion) have been studied. The general principles of operation of the electronic structures with the intrinsic active zones have been established.

Additional main goals in the project are: selective doping of ion tracks and creation of electrical contacts to individual ion tracks; an attempt to fabricate elementary electronic structures comprising ion tracks.

To implement the research the participants have access to all the necessary experimental equipment (among them the unique heavy ion accellerators GANIL, U-400, and ISL, a technological class 30 clean room, and high pressure cells). They have had long-term experience of joint research in the fields of superhard semiconductors, ion radiation, and electronics.

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Koordynator

Universität Hagen
Wkład UE
Brak danych
Adres
Haldener Str. 182
58084 Hagen
Niemcy

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Koszt całkowity
Brak danych

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